The Michigan benchmark: towards XML query performance diagnostics

We propose a micro-benchmark for XML data management to aid engineers in designing improved XML processing engines. This benchmark is inherently different from application-level benchmarks, which are designed to help users choose between alternative products. We primarily attempt to capture the rich variety of data structures and distributions possible in XML, and to isolate their effects, without imitating any particular application. The benchmark specifies a single data set against which carefully specified queries can be used to evaluate system performance for XML data with various characteristics.     

氢化非晶硅磷掺杂工艺条件的研究

本文对氧化非晶硅磷掺杂的工艺条件进行了研究，得出掺磷氢化非晶硅的电导率随衬底温度、气体流量、气体压力、射频功率、淀积时间的变化关系，为非晶硅的有效掺杂和器件研究提供了依据。     

重力测井用于注CO2油藏监测的理论分析

在３次采油过程中，注采已为广泛应用，但所面临的问题是如何确定油层中注入流体的波及范围、流体前缘位置及推进速度等。利用地震方法进行注采由于受震资料分辨率的限制，只适用于浅层，而其它测井方法由于探测范围限制，揭示井间注采动态又显不足。重力测井具有探测范围大、受井径变化影响小、重复观测周期短、不受目的层埋深限制等优点。通过正演模拟分析表明，重力测井方法不仅可监测ＣＯ２前缘空间位置的变化，而且可以判定ＣＯ     

关于CEA混凝土膨胀剂的若干技术问题--与游宝坤同志讨论

作者阐述了CEA膨胀剂混凝土的膨胀量较大，干缩小，抗裂性能良好的特性，CEA与粉煤灰掺用提高强度，改善界面过渡层的性质，提高耐久性；CEA混凝土无Ca（OH）2溶出问题。文中列出GBJ119应用技术规范，说明CEA可用于防水工程。     

系列尼古丁PVC膜选择性电极的研制

以尼古丁为研究对象 ,研制了一系列含有不同增塑剂 (苯二甲酸二辛酯、苯二甲酸二壬酯和癸二酸二辛酯 )和电活性物质 (尼古丁 四苯硼缔合物、尼古丁 硅钨酸缔合物、尼古丁 磷钨酸缔合物和尼古丁 雷氏盐缔合物 )的PVC膜电极。所有的 8支电极均对尼古丁盐酸溶液有Nernst响应。所制备的电极中 ,以尼古丁 四苯硼缔合物、尼古丁 硅钨酸缔合物、尼古丁 磷钨酸缔合物或尼古丁 雷氏盐缔合物为活性物的电极 ,其线性范围达到 10 - 4～ 10 - 1 mol/L ,以尼古丁 硅钨酸缔合物为活性物的电极线性范围达到 10 - 5～ 10 - 1 mol/L。电极响应的均匀性还在进一步的研究和改善中     

基于AlAs氧化法研制的垂直腔面发射激光器

结合垂直腔面发射激光器的制备,研究了AlAs选择性氧化工艺中氧化炉温、氮气流量、水温等条件和AlAs层的横向氧化速率之间的关系,并得到了可精确控制氧化过程的工艺条件,在优化的工艺条件下运用湿氮氧化制备出InGaAs/GaAs垂直腔面发射激光器,实现了器件的室温脉冲激射.     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

无抗性选择标记的植酸酶基因转化DNA的构建

构建了无抗性选择标记植酸酶基因的转化片段DNAphyAⅡ。两侧设置了高等植物基因组DNA保守序列CAATbox，TATAbox和polyA的DNA片段（DNAphyAⅡ，5‘-CAATbox-TATAbox-CaMV35S-phyA Ⅱ-GUS-Nos-Tem-polyA-3‘)，为提高转化率奠定了分子基础，此外DNAphyAⅡ中植酸酶蛋白编码基因phyA Ⅱ前后的启动子和终止子序列，确保了phyA Ⅱ会得以正确表达。