首页 | 官方网站   微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   56300篇
  免费   2742篇
  国内免费   197篇
工业技术   59239篇
  2023年   510篇
  2022年   439篇
  2021年   1425篇
  2020年   1007篇
  2019年   1022篇
  2018年   1340篇
  2017年   1332篇
  2016年   1654篇
  2015年   1311篇
  2014年   2042篇
  2013年   3502篇
  2012年   3211篇
  2011年   3928篇
  2010年   2987篇
  2009年   3174篇
  2008年   2935篇
  2007年   2476篇
  2006年   2254篇
  2005年   1943篇
  2004年   1852篇
  2003年   1700篇
  2002年   1653篇
  2001年   1290篇
  2000年   1204篇
  1999年   1182篇
  1998年   2196篇
  1997年   1437篇
  1996年   1203篇
  1995年   961篇
  1994年   727篇
  1993年   685篇
  1992年   490篇
  1991年   496篇
  1990年   417篇
  1989年   406篇
  1988年   321篇
  1987年   275篇
  1986年   255篇
  1985年   230篇
  1984年   199篇
  1983年   151篇
  1982年   151篇
  1981年   129篇
  1980年   127篇
  1979年   102篇
  1978年   95篇
  1977年   124篇
  1976年   158篇
  1975年   78篇
  1974年   74篇
排序方式: 共有10000条查询结果,搜索用时 62 毫秒
131.
132.
Supported catalysts, one of the commonest forms of heterogeneous catalysts in practical use, consist of small crystallites of a catalytically active component dispersed in a porous support of high surface area. Impregnation of the support with an aqueous solution of a compound containing the appropriate catalytic component is an important and frequently used method of preparing this type of catalyst. A nonaqueous solution should be used if the sup port surface is hydrophobic or if hydrolysis of the support surface is to be avoided. In its simplest form, this impregnation method involves three steps: (1) contacting the support with impregnating solution for a certain period of time, (2) drying the support to remove the imbibed liquid, and (3) activating the catalyst by calcination, reduction, or other appropriate treatment.  相似文献   
133.
Evaluating and monitoring nucleation and growth in copper foil   总被引:1,自引:0,他引:1  
The electrodeposition of copper foil for use in electronic materials applications is a complex and demanding process. The specific aspects of producing and controlling the structure-property-performance requirements of the foil are important because of the stringent demands placed on their use in printed circuit boards and similar products. In this paper, a brief review of the electrodeposition process for raw copper foil is presented. Since electrolyte additives play such a significant role in the copper-depositionprocess, the effects of two essential additives, chloride ion and an organic (e.g., glue or gelatine), on the foil are described. Also, the influence of other operating parameters on the initial nucleation, growth, and subsequent electrocrystallization are discussed. Selected characterization methods, such as polarization and scanning electron micrography techniques, are described as a means of monitoring the process, but universally accepted methods of evaluating and controlling the additives and foil quality during electrolysis are still being sought.  相似文献   
134.
In the present study, the effect of microporosity on the tensile properties of as-cast AZ91D magnesium alloy was investigated through experimental observation and numerical prediction. The test specimens were fabricated by die-casting and gravity-casting. For gravity-casting, the inoculation and use of various metallic moulds were applied to obtain a wide range of microporosity. The deficiency of the interdendritic feeding of the liquid phase acted as a dominant mechanism on the formation of the micropores in the Mg?Al-alloys, rather than the evolution of hydrogen gas. Although tensile strength and elongation has a nonlinear and very intensive dependence upon microporosity, the yield strength appeared to have a linear relationship with microporosity. However, it was possible to quantitatively estimate the linear contribution of microporosity on the individual tensile property for a range of microporosity, which was below about 1%. The numerical prediction suggests that the effect of microporosity on fractured strength and elongation decreased as the strain hardening exponent increased. Furthermore, the shape and distribution of micropores may play a more dominant role than local plastic deformation on the tensile behavior of AZ91D alloy.  相似文献   
135.
超声波处理和染料结晶性能对粒度分布的影响   总被引:1,自引:0,他引:1  
超声波是一种频率超越人类听觉范围的声波 ,主要分为动力超声波 ( 1 8kHz~ 1MHz)和用于诊断的超声波 ( 1MHz以上 )。多年以来 ,超声波作为一种辅助工具广泛应用于许多领域 ,从而引起了化学家的极大兴趣。研究表明 ,在纺织品染色过程中 ,超声波能提高反应速率可能归因于超声波的能量 ,有关超声波的应用潜力已有许多文献报道。超声波能提高染色效率主要归因于液体介质中的空化现象 ,这一点已被一致认可。所谓空化现象是指微气泡增长、崩溃、爆炸。Mason指出 ,经超声波辐射的固体粒度显著减小。Tomlisom和其他工作者也…  相似文献   
136.
Smart TDI readout circuit for long-wavelength IR detector   总被引:3,自引:0,他引:3  
A smart time delay and integration (TDI) readout circuit is suggested which performs background suppression, cell-to-cell non-uniformity compensation, and dead pixel correction. Using the smart TDI readout circuit, the integration capacitor area occupying almost the whole area of a unit-cell can be reduced to one-fifth and transimpedance gain can increase by five times. From measurement results, it is found that the skimming current error for a few hundred nA background current is < 1.25 nA corresponding to LSB/2 of ADC and the non-uniformity introduced by cell-to-cell background current variation is reduced to 1.02 nA  相似文献   
137.
The frequency dependency of Rayleigh surface wave is investigated indirectly by measuring the angular dependency of the backward radiation of the incident ultrasonic wave in two kinds of degraded specimens by scuffing or corrosion. Then, the frequency dependency is compared with the residual stress distribution or the corrosion-fatigue characteristics for the scuffed or corroded specimens, respectively. The width of the backward radiation profile increases with the increase of the variation in residual stress distribution for the scuffed specimens. In the corroded specimens, the profile width decreases with the increase of the effective aging layer thickness and is inversely proportional to the exponent, m, in the Paris’ law that can predict the crack size increase due to fatigue. The result observed in this study demonstrates high potential of backward radiated ultrasound as a tool for nondestructive evaluation of subsurface gradient of material degradation generated by scuffing or corrosion.  相似文献   
138.
Rotating-bending uniaxial fatigue tests and micro-fatigue crack initiation tests were carried out using a permanent mold cast (PMC) and semi-solid die cast (SDC) with Al−7%Si−0.35%Mg composition in order to examine the relationship between solidification structures and fatigue behaviors. The crack length was measured using a replication method. Fatigue strength was improved in SDC, which was almost consistent with the predicted fatigue strength using the size of Si particle cluster. Resistance to fatigue crack initiation and fatigue strength were improved in SDC owing to the finer Si cluster and to higher ultimate tensile strength. Fatigue crack in PMC was preferentially initiated at pores. For SDC, the fatigue crack was initiated at the Si particle/matrix interface, and then sucessively grew along eutectic cell boundaries.  相似文献   
139.
140.
This paper addresses the low-temperature deposition processes and electronic properties of silicon based thin film semiconductors and dielectrics to enable the fabrication of mechanically flexible electronic devices on plastic substrates. Device quality amorphous hydrogenated silicon (a-Si:H), nanocrystalline silicon (nc-Si), and amorphous silicon nitride (a-SiN/sub x/) films and thin film transistors (TFTs) were made using existing industrial plasma deposition equipment at the process temperatures as low as 75/spl deg/C and 120/spl deg/C. The a-Si:H TFTs fabricated at 120/spl deg/C demonstrate performance similar to their high-temperature counterparts, including the field effect mobility (/spl mu//sub FE/) of 0.8 cm/sup 2/V/sup -1/s/sup -1/, the threshold voltage (V/sub T/) of 4.5 V, and the subthreshold slope of 0.5 V/dec, and can be used in active matrix (AM) displays including organic light emitting diode (OLED) displays. The a-Si:H TFTs fabricated at 75/spl deg/C exhibit /spl mu//sub FE/ of 0.6 cm/sup 2/V/sup -1/s/sup -1/, and V/sub T/ of 4 V. It is shown that further improvement in TFT performance can be achieved by using n/sup +/ nc-Si contact layers and plasma treatments of the interface between the gate dielectric and the channel layer. The results demonstrate that with appropriate process optimization, the large area thin film Si technology suits well the fabrication of electronic devices on low-cost plastic substrates.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号