APT（STLRI）—1.78型单模光纤（缆）连接器简介

利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。     

磷矿的电选试验研究

清水沟中低品位磷矿性质复杂，嵌布粒度细，磨至-0．174mm 92．8％，通过振动—气流联合作用摩擦荷电，采用悬浮电选机经-粗-精-扫电选。可由含P2O5为24．47％的原矿获得含P2O5为30．23％。回收率为83．26％，杂质含量合格的磷精矿。     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.     

A new method for producing high melt strength polypropylene with reactive extrusion

A high‐melt‐strength polypropylene (HMSPP) was prepared using a twin‐screw reactive extruder from a commercial isotactic polypropylene through two stages, first, maleic anhydride is grafted to polypropylene to obtain a maleic anhydride‐grafted polypropylene (PP‐g‐MA), and then the grafted polymer is reacted with epoxy to extend the branched chain. Fourier transformed infrared spectroscopy indicated that maleic anhydride was grafted on polypropylene and reacted with epoxy. Melt flow rate and sag resistance test showed that the melt strength of the HMSPP improved considerably. Differential scanning calorimetry test showed that the long chain branches (LCBs) act as a nucleating agent in the crystallization of the HMSPP, which leads to a high crystallization temperature and crystallinity. Furthermore, the LCB efficiency of the HMSPP can also be calculated by analyzing its rheological property. POLYM. ENG. SCI., 2008. © 2008 Society of Plastics Engineers     

赴日无线电监测技术考察报告

首先介绍了日本总务省关东综合通信局电波监理部的情况，然后对日本安立公司生产的RR510A型无线电监测接收机和技术参数以及MS8609A型数字移动无线发射机测试仪的功能进行了分析和介绍。     

Comparison of activities in selective catalytic reduction of NOx by C3H8 over Co/MFI, Fe/MFI, and H/MFI zeolite catalysts

The Co/MFI(SiO₂/Al₂O₃ = 30) were prepared by a precipitation method with NaOCl in alkali solutions exhibited high activities to N₂ at 250 °C for the selective catalytic reduction (SCR) of NO_x. These catalysts showed two UV–vis bands at 700 and 400 nm, indicating the presence of octahedral Co(III) as well as tetrahedral Co(II). The high SCR activity over such Co(III, II)/MFI(30) seems to come from Co(III)---O moieties. The Co(II)MFI(30) catalysts prepared from Co(II)Cl₂ exhibited low SCR activities due to the presence of tetrahedral Co(II) ions in MFI. Less CO formation occurred over Co/MFI catalysts. The Fe/MFI(30) catalyst exhibited high activity due to the presence of some Fe---O species in MFI but more amount of CO were produced during SCR. H/MFI(30) catalyst exhibited a good SCR activity. However, more amount of carbonaceous deposits were produced on it. The correlation between acid concentration and SCR activity was discussed over H/MFIs.     

Fabrication of a poly-Si thin-film transistor with storage capacitor

The fabrication process of a low-temperature poly-Si thin-film transistor (TFT) with a storage capacitor was studied. The atmospheric-pressure chemical-vapour deposited SiO₂ protected the buried indium tin oxide (ITO) from reduction by a pure H₂ plasma treatment that was essential for the effective improvement of the poly-Si TFT characteristics. Thus, a storage capacitor with an ITO (picture electrode)-SiO₂-ITO (buried common electrode) structure was successfully fabricated. The poly-Si TFT with a channel width/length W/L ratio of 5 drove a 3 pF storage capacitor in 2 μs, and it showed superior driverability for LCD use. The TFT also had good hold characteristics under illumination for the realization of grey-scale representation.     

On a three-dimensional axisymmetric boundary-value problem of nonlinear elastic deformation: Asymptotic solution and exponentially small error

In this paper, we study a three-dimensional axisymmetric boundary-value problem of a slender cylinder composed of a nonlinearly elastic material subjected to an axial force. Starting from the field equations, after a transformation and proper scalings, we identify a small variable and two small parameters, which characterize the present problem. Then, by an approach involving compound series-asymptotic expansions, a nonlinear ODE is derived, which governs the axial strain (the first-term in the series expansion). By imposing the zero radial displacement conditions at two ends, we manage to get the analytical solution of the axial strain, from which all other physical quantities can be deduced and thus the three-dimensional displacement field can be determined. Graphical results are presented, which show that there are two boundary layers near the two ends while the middle part is in a state of almost uniform extension. The asymptotic structure of the analytical solution is derived, which offers clear explanations to the structure of the deformed configuration and shows that the thickness of both boundary layers is of the order of the radius. We also point out the relevance of the present results to the St. Venant’s problem. In particular, we obtain the explicit uniformly-valid exponentially small error term, when the obtained deformed configuration is compared to the configuration of a uniform extension.