PtSe2薄膜的时间分辨太赫兹光谱特性研究(特邀)

基于时间分辨太赫兹光谱技术,研究了不同厚度的二硒化铂(PtSe_2)薄膜在太赫兹波段的光学特性。实验结果表明,当泵浦光功率从0增强至2 540μJ/cm2时,11 nm-PtSe_2薄膜的电导率逐渐增大,透射太赫兹信号强度减小;而197 nm-PtSe_2薄膜的电导率逐渐减小,透射太赫兹信号强度增大。由此构造的光控太赫兹调制器件的调制速度约为14 ps,工作带宽为0.2～1.8 THz,调制深度为15%～35%。研究证明PtSe_2薄膜材料在高速光控太赫兹器件领域具有应用潜力。     

掺钼ZnO透明导电薄膜的太赫兹电磁波传输性质

采用直流磁控反应溅射方法,通过调节氧分压在玻璃基底上制备了不同载流子浓度的掺Mo的ZnO（ZMO）透明导电薄膜.应用太赫兹电磁波时域光谱技术研究了ZMO导电膜的太赫兹电磁波透射性质及介电响应,得到了与频率相关的电导率、能量吸收和薄膜折射率,实验结果与经典Drude模型相符很好.ZMO导电膜的太赫兹电磁波脉冲透射性质表明,通过调节ZMO薄膜的载流子浓度,该导电膜可作为应用于衬底和光学器件等太赫兹电磁波频率范围的宽带抗反射涂层. 关键词： 太赫兹电磁波光谱 薄膜电导率 宽带抗反射 透明导电薄膜     

厚度误差对THz-TDS的测量不确定度分析

阐述了基于菲涅尔公式的透射式太赫兹时域光谱系统提取样品光学常数的方法和原理,分析了样品厚度误差对THz-TDS测量不确定度的影响,并建立了相应的不确定度模型。进行太赫兹时域光谱测量实验,提取硅片在太赫兹波段的折射率,并计算了误差对提取样品折射率的影响。结果表明,随着厚度误差的增大,系统测量偏差也随之增大。对于较厚样品,相同厚度误差对其测量结果影响较小。样品厚度为994μm时,在厚度存在1μm的测量误差情况下,系统测量折射率的偏差为0.001 2,接近模型的仿真值。实验结果验证了厚度误差对测量不确定度模型的有效性,了解了厚度误差对系统测量结果的影响情况,对测量过程及结果分析具有一定的指导意义。     

太赫兹波在有限电导率金属空芯波导中的传输特性

研究了太赫兹波在具有有限电导率的金属镀层空芯波导中的传输特性.从其传输的特性方程出发,利用Newton-Raphson迭代方法数值模拟了传输损耗和相位常数随太赫兹波频率、波导内径以及波导中金属镀层的电导率的变化关系.结果表明,采用大芯径波导和高电导率的金属镀层能有效降低太赫兹波的传输损耗. 关键词： 太赫兹波 空芯波导 特征方程     

高温超导约瑟夫森结太赫兹混频系统

在小型脉冲管制冷机（工作温度约60 K）上搭建了高温超导约瑟夫森结太赫兹谐波混频系统,并采取了一系列措施增强结与太赫兹波的耦合。所采取的措施主要有:研究不同基片对结的影响并最终选择MgO做为双晶结基片,设计平面周期对数天线,同时使用一个超半球硅透镜和两个离轴抛物面反射镜组成准光学系统。最终成功在小型脉冲管制冷机中获得结对623 GHz太赫兹波的响应,并且成功进行24次谐波混频实验。     

二氧化钒薄膜低温制备及其太赫兹调制特性研究

针对二氧化钒(VO2)薄膜在可调谐太赫兹功能器件中的应用,利用低温磁控溅射技术,在太赫兹和光学频段透明的BK7玻璃上制备出高质量的VO2薄膜.晶体结构和微观形貌分析显示薄膜为单相VO2单斜金红石结构,具有明显的(011)晶面择优取向,结构致密,表面平整.利用四探针技术和太赫兹时域光谱系统分析了薄膜的绝缘体-金属相变特性,发现相变过程中薄膜电阻率变化达到4个数量级,同时对太赫兹透射强度具有强烈的调制作用,调制深度高达89％.通过电学相变和太赫兹光学相变特性的对比研究,证实薄膜的电阻率突变主要与逾渗通路的形成有关,而太赫兹幅度的调制则来源于薄膜中载流子浓度的变化.该薄膜制备简单,成膜质量高,太赫兹调制性能优异,可应用于太赫兹开关和调制器等集成式太赫兹功能器件.     

太赫兹生物效应的原理和应用

太赫兹技术在过去数十年间发展迅速,作为一种强大的生物大分子表征工具,太赫兹光谱和成像技术展现了其在诊断医学和临床医学中的广阔前景。通过太赫兹光谱系统可以对生物样本的特定成分进行定量分析,类似地,太赫兹成像系统可以给出样品中待测成分的空间分布。以太赫兹光学系统的类型为索引综述了太赫兹诊断医学方面一些具有代表性的研究,并从生物个体、组织、细胞到生物大分子的层面介绍了一些太赫兹生物效应的研究。尽管太赫兹临床医学领域仍处于尝试和初步探索的阶段,但已经呈现了很多具有应用潜力的开创性研究,如太赫兹辅助靶向药物跨膜运输和太赫兹癌细胞DNA去甲基等,为太赫兹技术的生物医学应用奠定了基础。最后总结太赫兹生物效应的研究现状,对该领域的重点研究方向和可能的突破点进行分析展望.     

太赫兹片上系统和基于微纳结构的太赫兹超宽谱源的研究进展

目前太赫兹辐射信号的功率不高,辐射带宽也较窄,这些对于生物化学、含能材料的太赫兹检测应用领域来说是一大限制因素,因此如何获得宽谱高功率的太赫兹源对于太赫兹时域光谱系统的发展是非常重要的;另一方面,常规的太赫兹系统是在自由空间传输探测的,测量过程需要在氮气或者干燥空气环境中进行,以克服空气中水的吸收干扰,同时自由空间中的光场与物质相互作用的模式又降低了物质检测的灵敏度,这对于痕量物质检测来说构成了挑战.面对这一问题,太赫兹片上系统利用微纳结构中的局域场效应实现对物质的低浓度检测,此方案有助于解决这一应用难题.综上所述,本文分成以下两部分阐述:首先阐述了纳米金属薄膜作为新的太赫兹源,它可以同时产生非相干的和相干的太赫兹信号,其输出为超过100 THz的太赫兹-红外辐射,功率高达10 mW,这种超宽谱和高功率现象主要是由于非相干的热辐射效应引起的;第二,阐述了基于不同传输线结构、不同基底材料的太赫兹片上系统结构设计和光谱应用.基于共面带状线结构和聚合物材料基底的太赫兹片上系统有着较低的损耗,能够实现超过2 THz带宽的测量和生物化学应用.     

电解质溶液的太赫兹透射特性研究

许多生物大分子的振动和转动能级都在太赫兹波段,且太赫兹波具有光子能量低,峰值功率高的特点,因此用太赫兹技术进行检测,能够从很大程度上保证生物分子不被破坏。然而,大部分的生物分子只有在水溶液中才能保持其生物活性,且水是极性分子,对太赫兹波有强烈的吸收,因此使用常规的太赫兹技术检测水溶液中生物样品的特性存在一定困难。设计了一种具有夹层结构的太赫兹微流控芯片,包含基片、盖片和微通道层,基片和盖片用环烯烃共聚物(COC)和有机玻璃(PMMA)作为材料。COC材料对太赫兹波具有高透性,并且对可见光透明,是制作太赫兹微流控芯片的理想材料,但是价格昂贵且不易获得。为了减少COC的用量,将COC嵌入到基片和盖片的PMMA中,保证太赫兹波能从COC中穿过。COC的直径为5 mm,厚度与PMMA材料一致,都为2 mm,与微通道中心对准。选用厚度为50 μm的强粘性双面胶作为微通道层,将双面胶的中心进行镂空处理作为微通道,其长为3 cm,宽为4 mm。基片、盖片和微通道层紧密粘合在一起构成太赫兹微流控芯片,太赫兹探测区直径为4 mm。将微流控技术与太赫兹技术相结合,减少了样品的消耗量,缩短了太赫兹波与样品的作用距离,为液态样品的检测提供了可能。研究发现,水对太赫兹波的强烈吸收主要是由于水中氢键引起的,而电解质溶液会对水溶液中的氢键产生影响。以电解质溶液为研究对象,分别配置了不同浓度的KCl,K₂SO₄,CuCl₂和CuSO₄溶液,利用太赫兹微流控技术研究了它们的太赫兹透射谱。结果表明：四种电解质溶液的太赫兹透射强度都低于纯去离子水的透射强度,但实验现象也有差别,CuCl₂溶液随浓度增加,太赫兹透射强度增加,而KCl,K₂SO₄和CuSO₄溶液则随着浓度的增加,太赫兹透射强度减小。     

延迟线位置偏差对太赫兹时域光谱系统的测量不确定度影响分析

太赫兹时域光谱技术可以快速准确地提取材料在太赫兹波段的光学常数。然而,其各组成部分在控制精度、响应误差、系统噪音以及实验操作、数据处理等方面的误差,将影响系统对材料光学常数提取的准确性。基于透射式太赫兹时域光谱系统的测量原理,分析了系统延迟线位置偏差对提取材料复折射率准确度的影响,建立了误差在样品测量过程中的传递模型,并利用MATLAB仿真了误差对提取样品复折射率影响。结果表明,样品折射率和消光系数的不确定度受到了系统延迟线位置偏差的影响,且系统延迟线位置偏差越大,样品的复折射率提取的不确定度也就越大。同时,相比消光系数,延迟线位置的偏差对样品折射率的不确定度具有更大的影响。该模型具有一定的实际意义和理论参考价值,可分析系统延迟线位置偏差对太赫兹时域光谱系统提取材料光学常数不确定度的影响,为优化太赫兹时域光谱系统提供理论指导。     

Some aspects of interactions between HTSC-films and substrates

Different aspects of the interaction between YBa₂Cu₂O_y(YBCO) films and (100) ZrO₂〈Y〉 (YSZ) substrates have been investigated. It was determined using X-ray diffraction methods that the structural mismatch between the film and the substrate leads to a film deformation throughout its thickness. At the same time a strained layer appears in the substrate, whose thickness is proportional to the film thickness. The surface morphology changes of YBCO films which take place with variation of the growth temperaturet_sin the vicinity of the optimum temperature lead to changes of the film grain structure probably connected with nucleation centers. Tl₂Ba₂CaCu₂O_y(TBCCO) films on YSZ substrates were also synthesized. It was found that the dependence of the TBCCO film surface morphology changes with annealing temperature and the dependence of YBCO film surface morphology changes ont_sare similar.     

Ultrafast strain engineering in complex oxide heterostructures

We report on ultrafast optical experiments in which femtosecond midinfrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO(3) epitaxial thin films is observed as a structural distortion propagates across the interface. Vibrational excitation, extended here to a wide class of heterostructures and interfaces, may be conducive to new strategies for electronic phase control at THz repetition rates.     

A study on the microwave responses of YBCO and TBCCO thin films by coplanar resonator technique

YBa₂Cu₃O₇(YBCO) thin films have been prepared by thermal coevaporation on LaAlO₃(LAO) substrates, and Tl₂Ba₂CaCu₂O₈(TBCCO) thin films are synthesized by magnetron sputtering method on LAO substrates. The transition temperature T_c is 90\,K for YBCO/LAO and 104\,K for TBCCO/LAO. Microwave responses of the films are studied systematically by coplanar resonator technique. Energy gaps of the films obtained are {\it\Delta}₀=1.04k_BT_c for YBCO films and ${\it\Delta}_0=0.84k_BT_c for TBCCO films by analysing the temperature dependence of resonant frequencies of coplanar resonator. Penetration depth at 0\,K \lambda ₀=198nm for YBCO films and \lambda₀ =200nm for TBCCO films could also be obtained by using the weak coupling theory and two fluid theory. Results of penetration depth and energy gap confirm the weak coupling properties of the films. In addition, microwave surface resistances R_s of YBCO/LAO and TBCCO/LAO are also investigated by analysing the quality factor and insert loss of the coplanar resonator. Surface resistance of TBCCO/LAO is less than that of YBCO/LAO, so that TBCCO/LAO films may have more potential applications.     

Zum Einsatz metallischer Leitfähigkeit während der Kondensation von Metallschichten

Ag-, Cd-, Tl-, Pb- and Bi-films are condensed at constant deposition rates onto crystalline quartz. Film conductance is measured as a function of the mass condensed. During the growth of the film metallic conductivity appears at a “critical” thickness. This critical thickness is constant at low temperatures and begins to rise exponentially at a certain temperature which depends on the condensation energy of the metal. For metals with low thermal conductivity a large critical thickness is found at low temperatures. If the substrate is pre-sensitized with silver the critical thickness of lead films is reduced considerably while amorphous bismuth films show just the opposite behaviour.     

基底对光学薄膜弱吸收测量的影响

 对表面热透镜技术测量光学薄膜弱吸收低频调制时不同基底对测量的影响进行了理论分析。用Lambda—900分光光度计测量了K9和石英基底的Ti₃O₅单层膜的吸收值，将该组样品作为定标片；用表面热透镜装置分别测量了BK7和石英空白基底及HfO₂，ZnO两组不同基底不同厚度单层膜样品的吸收。通过分析比较同一工艺条件下镀制的不同基底薄膜样品用与其同种和不同种基底定标片定标测量的结果，表明在低频测量时需要用与测量样品同种基底的定标片定标；不同厚度样品的测量结果表明，在不能严格满足热薄条件时,测量结果需引入修正值。     

额定压强下O_2/Ar比对ZnO:Al薄膜导电性能的影响

采用射频磁控溅射法在石英玻璃基片上制备出ZnO:Al薄膜,并对薄膜在不同O2/Ar比状态下的沉积厚度、结晶性能和导电性能之间的关系进行了探讨。测试结果表明:在0.2Pa的额定压强下,Ar流量越大,薄膜的厚度越大,XRD峰越强,薄膜的电阻率(ρ)值越低。在纯氩气状态下溅射时,制得的薄膜具有最大的厚度值,约为2.06μm,并具有最强的XRD峰,ρ同时也达到最小值,阻值为2.66×10-4Ω.cm。研究表明:结晶性能的提高对薄膜ρ的降低起到了关键作用,而厚度的增加也会使电阻率下降。     

Nanostructure,conductivity, and reflectivity of thin iron and (Fe) X (BaF2) Y films

Fe and (Fe) _X (BaF₂) _Y films 10- to 160-nm-thick are grown on a polymer substrate by vacuum evaporation. The surface relief and nanostructure of the films are examined. The dependence of the conductivity on the film thickness is obtained, and a correlation between the conductivity and surface relief is found. The influence of the BaF₂ dielectric phase on the conductivity and reflectivity of the Fe films is studied. It is shown that the BaF₂ layer to some extent slows down oxidation and maintains the reflectivity of the Fe films compared with pure iron films exposed to air.     

Tunable terahertz transmission behaviors and coupling mechanism in hybrid MoS2 metamaterials

A hybrid metamaterial with the integration of molybdenum disulfide(MoS₂)overlayer is proposed to manipulate the terahertz(THz)wave.The simulated results indicate that the introduction of MoS₂ layer could significantly modify the resonant responses with large resonance red-shift and bandwidth broadening due to the depolarization field effect,especially for the structure on the small permitivity substrate.Additionally,the wide-band modulator in off-resonant region and a switch effect at resonance can be achieved by varying the conductivity of MoS₂ layer.Further theoretical calculations based on the Lorentz coupling model are consistent with the simulated results,explicating the response behaviors originate from the coupling between MoS₂ overlayer and the metastructure.Our results could provide a possibility for active control THz modulator and switchable device based on the MoS₂ overlayer and advance the understanding of the coupling mechanism in hybrid structures.     

Photoconductivity and dark conductivity studies of solution-gas interface grown Ag2S films

Ag₂S films of thicknesses ranging between 500–4000 Å were formed on glass substrate, employing solution-gas interface technique. Dark conductivity of Ag₂S films has been studied at different temperatures and Bi(III) concentrations. Photoconductivity of these films has been investigated at different temperatures, illumination levels, excitation energies and Bi(III) concentrations. Dark conductivity is explained on Slater and Neugebauer models, while photoconductivity is explained on Miccoci and Rose models.     

Terahertz conductivity measurement of FeSe0.5Te0.5 and Co-doped BaFe2As2 thin films

The terahertz (THz) conductivity of FeSe_0.5Te_0.5 (‘11’-type) and Co-doped BaFe₂As₂ (‘122’-type) thin films are investigated. For ‘11’-type, the frequency dependence of the complex conductivity can be understood as that of BCS-type superconductor near the superconducting gap energy, and we estimated the superconducting gap energy to be 0.6 meV. For ‘122’-type, we estimated the superconducting gap energy to be 2.8 meV, which is considered to be the superconducting gap opened at the electron-type Fermi surface near the M point.