压力下GaN/Ga1-xAlxN量子点中杂质态的界面效应

考虑界面处导带弯曲,流体静压力以及有效质量随量子点位置的依赖性,采用变分法以及简化相干势近似,研究了无限高势垒GaN/Ga_1-xAl_xN球形量子点中杂质态的界面效应,计算了杂质态结合能随量子点尺寸、电子面密度以及压力的变化关系。结果表明,结合能随压力的增大呈线性增加的趋势,有效质量位置的依赖性以及导带弯曲对结合能有不容忽视的影响。     

Influence of the image charge effect on the hydrogen-like impurity-bound polaron in a spherical quantum dot in the presence of an electric field

We have investigated the influence of an external electric field on the binding energies and polaronic shifts of the ground and some first few excited states of a hydrogenic impurity in a spherical quantum dot by taking into account the image charge effect. By using Landau–Pekar variational method the general analytical expression is obtained for the impurity bound-polaron energies. It has been numerically identified the conditions (electric field, nominal radius of quantum dot, etc.) in which the bound-polaron states can be existence in GaAs quantum dot. We have shown that the polaronic shifts in the binding energy of 1s-like state are the same in cases with and without image charge effect while they for 2s-like state are not coincide and have different monotonic behavior versus confinement potential. Electron–phonon interaction lifts the degeneracy of the 2px-, 2py-, and 2pz-like states of a donor impurity and reduces their binding energies.     

Electronic states of coupled quantum dot-ring structure under lateral electric field with and without a hydrogenic donor impurity

A detailed investigation of the lateral electric field effect on single electron states in coupled quantum dot-ring structure has been systematically studied for cases with and without an on-center hydrogenic donor impurity. The single electron energy spectrum has been found using the effective mass approximation and an exact diagonalization technique. The electron ground state's probability density has been examined for different values of the confinement energies and depth of dot confinement relative to the bottom of the quantum ring and barrier thickness. The energy level's dependence on the electric field strength has been studied considering the effects of mentioned parameters of the structure and hydrogenic donor impurity.     

Infrared Magneto-Optical Absorption of Shallow Donors in GaAs/GaAsAl Quantum Dots

Infrared magneto-optical absorption spectra of shallow donor impurity states in GaAs/Ga-AsAl quantum dot are investigated theoretically using the effective-mass, approximation within the strong confinement regime. The numerical results show that for high magnetic fields, the transition energies for (0, 0) + (0, 1) increase linearly with enhancement of magnetic field strength, while the transition energies for (0, 0) → (0, -1) appear to diminish with increasing magnetic field strength.     

Spectrum and Binding Energy of an Off-Center Hydrogenic Donor in aSpherical Quantum Dot

Off-center impurity effects in a spherical quantum dot are theoretically studied by degenerate perturbation method in strong confinement. The energy levels and binding energies are computed for the typical GaAs material as function of the donor position. The numerical results show the quantum size effect. We note that the energy levels and binding energies are not onlyrelated to the position of donor and the strength of confinement,but also related to the fold of degenerate states. We can see obviously that gaps will appear among the degenerate states and the splitting of energy levels and binding energies will appear as the position of the impurity is shifted away off the center.     

Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

The effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-center hydrogenic donor impurity are investigated. The confining potential of the system consists of two parabolas with various confinement energies. The calculations are made using the exact diagonalization technique. A selection rule for intraband transitions was found for x-polarized incident light. The absorption spectrum mainly exhibits a redshift with the increment of electric field strength. On the other hand, the absorption spectrum can exhibit either a blue- or redshift depending on the values of confinement energies of dot and ring. Additionally, electric field changes the energetic shift direction influenced by the variation of barrier thickness of the structure.     

Effect of electric field and temperature on the binding energy of bound polaron in an anisotropic quantum dot

The ratio between the confinement lengths in the xy-plane and the z direction plays an important role in determining the properties of anisotropic quantum dot. Within a variational approach of Pekar type, we investigated theoretically the effects of electric field and temperature on the ground-state binding energies of hydrogenic impurity polarons in KBr anisotropic quantum dot. The obtained results illustrate that the binding energies increase with the electric field strength and temperature but decrease with the position of the impurity when considering different confinement lengths in the xy-plane and the z direction and present the properties of the anisotropic quantum dot.     

Effects of Electric Field on Electronic States in a GaAs/GaAlAs Quantum Dot with Different Confinements

Binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, parabolic confinement and rectangular confinement are calculated as a function of dot radius in the influence of electric field. The binding energy is calculated following a variational procedure within the effective mass approximation along with the spatial depended dielectric function. A finite confining potential well with depth is determined by the discontinuity of the band gap in the quantum dot and the cladding. It is found that the contribution of spatially dependent screening effects are small for a donor impurity and it is concluded that the rectangulax confinement is better than the parabolic and spherical confinements. These results are compared with the existing literature.     

Lateral electric field effects on quantum size confinement in cylindrical quantum dot under parabolic potential

Within the effective mass approximation, we investigated theoretically the ground-state energy of a single particle and the binding energy of the neutral donor impurity (D⁰) affected by a lateral electric field in a parabolic quantum dot (QD). The results show that the electron and the hole ground-state energy and the band to band transition energies shift to lower values (red shift) by increasing the field intensity. The quantum Stark shift (QSS) for the electron increases rapidly in the quasi spherical QD (QSQD) by increasing the lateral field, whereas for the hole it increases monotony. In the cylindrical QDs (CQDs), we found that the QSS for electron and hole increase monotonically. The quantum size, lateral electric field and impurity position effect on the binding energy of neutral donor (D⁰) is studied. Unexpected behavior of D⁰ in quantum well limit (QW), the binding energy of D⁰ is increasing (blue shift) with increasing QD radius R$R$ at the presence of a lateral electric field. It appears that for a fixed size of the QD, the off-center binding energy decreases when the impurity ion is displaced from the center to the QD borders, while it is shifted to lower energy with increasing the field.     

Shallow Donor Impurity Ground State in a GaAs/AlAs Spherical Quantum Dot within an Electric Field

Using the configuration-integration methods {(CI)} [Phys. Rev.B 45 (1992) 19], we report the results of the Hydrogenic-impurity ground state in a GaAs/AlAs spherical quantum dot under an electric field. We discuss the variations of the binding energies of the Hydrogenic-impurity groundstate as a function of the position of impurity D, the radius R of the quantum dot, and also as a function of electric field F. We find that the ground energy and binding energy of impurity placed anywhere depend strongly on the position of impurity. Also, electric field can largely change theHydrogenic-impurity ground state only limiting to the big radius of quantum dot. And the differences in energy level and binding energyare observed from the center donor and off-center donor.     

柱形量子点中弱耦合磁极化子的性质

应用线性组合算符方法和幺正变换方法,研究在抛物势作用下的柱形量子点中磁极化子的性质。对ZnS量子点的数值计算表明,量子点中磁极化子的基态能量随特征频率、回旋共振频率的增大而增加,这是由于特征频率增加时振动能量、回旋共振频率增加时外磁场中的附加能量增加所致。当特征频率(或回旋共振频率)增加到某一值时,磁极化子能量由负变为正。基态能量随柱高的减小而增加,且柱高越小,增加越快;当柱高减小到某一值时,磁极化子能量也由负变为正。总之,柱形量子点中的磁极化子,其基态能量与量子点的尺度、外磁场、特征频率等有关。     

The binding energy of a hydrogenic impurity in self-assembled double quantum dots

The binding energy of a hydrogenic impurity in self-assembled double quantum dots is calculated via the finite-difference method. The variation in binding energy with donor position, structure parameters and external magnetic field is studied in detail. The results found are: (i) the binding energy has a complex behaviour due to coupling between the two dots; (ii) the binding energy is much larger when the donor is placed in the centre of one dot than in other positions; and (iii) the external magnetic field has different effects on the binding energy for different quantum-dot sizes or lateral confinements.     

Hydrostatic pressure,impurity position and electric and magnetic field effects on the binding energy and photo-ionization cross section of a hydrogenic donor impurity in an InAs Pöschl-Teller quantum ring

Using the variational method and the effective mass and parabolic band approximations, the behaviour of the binding energy and photo-ionization cross section of a hydrogenic-like donor impurity in an InAs quantum ring, with Pöschl-Teller confinement potential along the axial direction, has been studied. In the investigation, the combined effects of hydrostatic pressure and electric and magnetic fields applied in the direction of growth have been taken into account. Parallel polarization of the incident radiation and several values of the applied electric and magnetic fields, hydrostatic pressure, and parameters of the Pöschl-Teller confinement potential were considered. The results obtained can be summarised as follows: (1) the influence of the applied electric and magnetic fields and the asymmetry degree of the Pöschl-Teller confinement potential on the donor binding energy is strongly dependent on the impurity position along the growth and radial directions of the quantum ring, (2) the binding energy is an increasing function of hydrostatic pressure and (3) the decrease (increase) in the binding energy with the electric and magnetic fields and parameters of the confinement potential (hydrostatic pressure) leads to a red shift (blue shift) of the maximum of the photo-ionization cross section spectrum of the on-centre impurity.     

The magnetic properties of GaAs parabolic quantum dot in the presence of donor impurity,magnetic and electric fields

The magnetization and the magnetic susceptibility quantities of a single electron moving in a two-dimensional (2D) parabolic quantum dot are studied under the influence of external uniform electric and magnetic fields, in the presence of a donor impurity. The Hamiltonian was solved using shifted 1/N expansion method within the effective mass approximation. The results have been displayed as a function of physical parameters: confinement strength ω₀, magnetic field strength ω_c, temperature T and electric field strength F.     

Effects of an electric field on the confined hydrogen impurity states in a spherical parabolic quantum dot

In this paper, we studied the effects of an electric field on a hydrogenic impurity confined in a spherical parabolic quantum dot using nondegenerate and degenerate perturbation methods. The binding energies of the ground and three low-excited states are calculated as a function of the confinement strength and as a function of the intensity of an applied electric field. Moreover, we computed the oscillator strength and the second-order nonlinear optical rectification coefficient based on the computed energies and wave functions. The results show that the electric and optical properties of hydrogenic impurity states are strongly affected by the confinement strength and the applied electric field.     

Control of the binding energy by tuning the single dopant position,magnetic field strength and shell thickness in ZnS/CdSe core/shell quantum dot

Recently, the new tunable optoelectronic devices associated to the inclusion of the single dopant are in continuous emergence. Combined to other effects such as magnetic field, geometrical confinement and dielectric discontinuity, it can constitute an approach to adjusting new transitions. In this paper, we present a theoretical investigation of magnetic field, donor position and quantum confinement effects on the ground state binding energy of single dopant confined in ZnS/CdSe core/shell quantum dot. Within the framework of the effective mass approximation, the Schrödinger equation was numerically been solved by using the Ritz variational method under the finite potential barrier. The results show that the binding energy is very affected by the core/shell sizes and by the external magnetic field. It has been shown that the single dopant energy transitions can be controlled by tuning the dopant position and/or the field strength.     

Impurity related optical properties in tuned quantum dot/ring systems

In this paper, we explore the linear, third-order nonlinear, and total optical absorption coefficient (OAC) and refractive index change coefficient (RICC) of a GaAs doped quantum dot/quantum ring (QD/QR) with parabolic-inverse squared potential in conjunction with modified Gaussian confinement and taking into account the presence of on-centre shallow donor and or acceptor impurity. Calculations are done via the compact density matrix formalism and the iterative method. The two-dimensional parabolic QD/QR is subjected to uniform magnetic field oriented perpendicularly to the plane of the structure. The energy levels and wave function are derived within the framework of effective-mass and parabolic band approximation. The results exhibit that the OACs and RICC are clearly affected by different parameters of the applied confinement, strength of magnetic field, and the presence of impurity. The variation of confinement potential, nature of impurity, dot radius, cyclotron frequency of the parabolic confinement potential, and geometric parameter of the on-centre repulsive potential lead to either a red-shift or a blue-shift of the resonant peaks of the OACs and of the maximum and minimum of the RICC together with significant variations of the magnitudes of these resonant structures.     

Electron Raman scattering of a hydrogenic impurity in a disc-shaped quantum dot

We have carried out the theoretical calculation of the differential cross section for the electron Raman scattering process associated with a hydrogenic impurity in a disc-shaped quantum dot (QD). We consider the impurity states confined in a disc-shaped QD with parabolic potential in the presence of an external electric field. Effects of the electric field and the confinement strength on the differential cross section are investigated. We make a comparison about the Raman intensity between with and without the Coulomb interaction. We found that the differential cross section of the hydrogenic impurity in a disc-shaped QD dependent strongly on the confinement strength, the external electric field intensity and the Coulomb interaction.     

Stark Effect Dependence on Hydrogenic Impurities in GaAs ParabolicQuantum-Well Wires

The ground-state and lowest excited-state binding energies of ahydrogenic impurity in GaAs parabolic quantum-well wires (QWWs)subjected to external electric and magnetic fields are investigated using the finite-difference method within the quasi-one-dimensional effective potential model. We define an effective radius ρ_eff of a cylindrical QWW, which can describe the strength of the lateral confinement. For the ground state, theposition of the largest probability density of electron in x-y plane is located at a point, while for the lowest excited state, is located on a circularity whose radius is ρ_eff. The point and circularity are pushed along the left half of the center axis of the quantum-well wire by the electric field directed along theright half. When an impurity is located at the point or within the circularity, the ground-state or lowest excited-state binding energies are the largest; when the impurity is apart from the point or circularity, the ground-state or lowest excited-state binding energies start to decrease.