离子束溅射氧化钽薄膜的光学带隙特性

Ta_2O_5薄膜是可见光到近红外波段中重要的高折射率薄膜材料之一。本文针对离子束溅射制备Ta_2O_5薄膜的光学带隙特性开展了实验研究工作,基于Cody-Lorentz模型表征了薄膜的光学带隙特性,重点针对薄膜的禁带宽度和Urbach带尾宽度与制备参数之间的相关性进行研究。研究结果表明:在置信概率95%以上时,对Ta_2O_5薄膜禁带宽度影响的制备参数,权重大小依次为氧气流量、基板温度、离子束电压;而对Ta_2O_5薄膜Urbach带尾宽度影响的制备参数,权重大小依次为基板温度和氧气流量。对于Ta_2O_5薄膜在超低损耗激光薄膜和高损伤阈值激光薄膜领域内应用,本文的研究结果给出了同步提高薄膜的禁带宽度和降低带尾宽度的重要工艺参数选择方法。     

近紫外区宽带反光镜的膜系优化设计与制备

依据紫外光学系统中紫外反光镜的使用要求,并结合汞灯发光光谱,提出了R93%@300~450 nm(R为反射率);T_(avg)85%@500~1 000 nm(T_(avg)表示平均透过率)的近紫外区宽带高反射率的设计指标。选用Ta_2O_5和SiO_2分别作为高低折射率材料,并采用正交试验法确定了Ta_2O_5和SiO_2膜料的折射率、消光系数和制备工艺参数。在规整周期性膜系的基础上,利用膜系设计软件进行优化设计,同时分析了膜层的敏感度,保证了镀制的可重复性。通过曲线测试和环境试验结果表明,该膜系满足设计使用要求。     

磁控溅射制备高聚物基TiO2-CeO2复合薄膜的组织和性能

采用磁控溅射技术在PET(聚对苯二甲酸乙二醇酯)衬底上制备了TiO2-CeO2复合薄膜;用X射线衍射仪、扫描电镜和UV-VIS分光光度计分析了薄膜的相组成、表面微观形貌和透射率.结果表明:溅射态的薄膜为非晶态;经150℃退火12 h后,薄膜表面有锐钛矿相颗粒析出;随着溅射功率的增加,薄膜表面的锐钛矿相颗粒数量明显增多,形状接近球形,在功率为100 W时,尺寸约为120 nm;随着溅射功率的增大,薄膜对紫外和可见光的透射率降低;另外,薄膜表面形貌和透射率也受溅射时间的影响.     

离子束溅射制备“日盲”紫外诱导透射滤光片

对“日盲”紫外诱导透射滤光片进行了理论设计与分析,并分别优化了离子束溅射法沉积ZrO2、SiO2和Al薄膜的工艺.利用反射与透射光谱反演获得了ZrO2和SiO2薄膜的光学常数,并由JGS1/SiO2/Al/SiO2/air (SAS)样品的变角度椭偏光谱反演精确获得了Al薄膜的光学常数.在此基础上,采用离子束溅射沉积方...     

双离子束溅射技术制备带通滤光片

研究了采用双离子束溅射沉积技术、以沉积时间作为膜厚控制手段制备带通滤光片的工艺。简要介绍了离子束溅射系统的基本工作原理和膜厚控制技术,描述了分别在K9玻璃和有色玻璃上制备由多层Ta2O5和SiO2薄膜组成的滤光片以及短波通和长波通的工艺过程,最后测试并分析了由短波通和长波通组成带通滤光片的光学性能。实验结果表明,采用双离子束溅射技术,以沉积时间作为膜厚监控手段能够制备出具有优良光性能并满足应用设计要求的带通滤光片。     

长春光机所深紫外光学薄膜技术研究进展

综述了深紫外光学薄膜技术在中科院长春光学精密机械与物理研究所的研究进展。为满足高性能深紫外光学系统对薄膜光学元件的需求,在以下方面开展了系统研究:定制了两台深紫外光学薄膜专用沉积设备,分别用于高性能深紫外光学薄膜的热蒸发与离子束溅射沉积工艺,实现了φ410mm光学元件的镀膜;通过优化薄膜沉积工艺,双面镀膜样品在193nm处典型透过率为98.5%～99%;对影响光学元件面形精度的因素进行了考察,可实现的膜厚均匀性为0.1%(rms),能够满足高质量深紫外光学系统的容差要求;采用X射线衍射方法对薄膜应力进行了测量,并采用有限元方法分析了应力对元件面形的影响;针对影响薄膜实用性能的因素,提出了针对性的解决方法,采用紫外辐照方法恢复了环境污染引起的透过率下降,发展了基于晶振监控法的膜厚精确控制方法。基于这些研究的阶段性成果,明确了下一步的研究方向。     

离子束溅射工艺中的基片温度及其控制方法

离子束溅射技术以其在制备薄膜中的独特优点,成为获得高性能薄膜材料的重要手段。对于薄膜的制备,基片的温度是一个重要参数。主要从薄膜结构、应力和附着力三个方面总结了基片温度对离子束溅射工艺中薄膜生长的影响,并结合实际情况,介绍了在离子束刻蚀、溅射和磁控溅射镀膜工艺中的一些温度控制方法。在实际操作中,要根据沉淀薄膜的要求和离子束溅射的具体方法及设备,并结合基片本身的结构特点来考虑基片的控温措施及温度范围。     

负偏压对DLC薄膜结构和摩擦学性能的影响

采用离子束溅射沉积镀膜法制备了DLC薄膜,研究了偏压对薄膜性能的影响。通过原子力显微镜(AFM)和拉曼光谱对DLC薄膜的表面形貌以及内部结构进行了分析表征。并用UTM-2摩擦磨损仪对其摩擦学性能进行了测试。结果表明,利用离子束溅射沉积制备的DLC薄膜具有良好的减摩抗磨性能。随着偏压的增加薄膜的摩擦因数先减小后增加,在-150 V偏压时,薄膜的摩擦学性能最好。     

碳离子束注入辅助蒸发低温沉积DLC薄膜研究

采用碳离子束注入辅助蒸发技术低温沉积了DLC薄膜,对薄膜沉积的工艺参数进行了优化,并对该薄膜的摩擦学行为进行了探讨。研究发现:碳离子束注入辅助蒸发技术沉积的DLC薄膜在离子量为3.0×1017ions/cm2,沉积率为0.1nm/s时具有最小的摩擦因数(<0.1);电流为2.0mA比3.0mA条件下所沉积的DLC薄膜表面光滑;磨损试验后,DLC薄膜的表面只有轻微磨损的痕迹。     

热处理对离子束溅射Ta_2O_5薄膜特性的影响

利用离子束溅射沉积技术制备了Ta2O5薄膜,在100~600℃的大气氛围中对其进行热处理(步进温度为100℃),并对热处理后样品的光学常数(折射率、折射率非均匀性、消光系数和物理厚度)、应力、晶向和表面形貌进行了研究。研究显示,随着热处理温度增加,薄膜折射率整体呈下降趋势,折射率非均匀性和物理厚度呈增加趋势,结果有效地改善了薄膜的消光系数和应力,但薄膜的晶向和表面形貌均未出现明显的变化。结果表明:热处理可以有效改变薄膜特性,但需要根据Ta2O5薄膜具体应用综合选择最优的热处理温度。本文对离子束溅射Ta2O5薄膜的热处理参数选择具有指导意义。     

高反射率13nmMo/Si多层膜

采用离子束溅射在不同的工艺参数下制备一系列单层 Mo膜、Si膜及多层膜 ,并用原子力显微镜分析单层膜表面粗糙度及两种材料间的界面扩散。当束流电压超过一定数值时 ,可避免单层膜的柱状生长 ;在 Mo- on- Si和 Si- on- Mo界面中 ,Mo- on- Si界面扩散对反射率的影响更大。采用 X射线衍射仪分析多层膜中 Mo、Si材料的晶体结构 ,均为多晶结构 ,其中 Mo为 ( 1 1 0 )晶向 ,Si为 ( 4 0 0 )晶向。根据上述分析优化工艺参数 ,获得的 1 3nm Mo/Si多层膜反射率达到 60 %。     

Analysis of thermal diffusivity of Ti thin film by thermoreflectance and periodic heating technique

Thermal diffusivity of Ti thin film with several hundred nanometers thickness has been measured by means of thermoreflectance (TR) technique and periodic heating using front heating and front detection configuration. Ti thin films were prepared on Si substrates by dc sputtering method. Then thin Mo layers as reflection layers were coated on Ti thin films. Surface of the Mo layer is irradiated by sinusoidally intensity modulated heating laser. Temperature response at the heated area is measured by a probe laser beam with constant intensity, as a TR signal. Phase lag between the phase of TR signal and that of heating laser beam was obtained from 100 kHz to 2.6 MHz. To analyze thermal diffusivity of Ti thin films using the phase lag data, we developed a three-layer analytical model such as Mo coating (100 nm)∕thin film∕semi-infinite substrate. The calculated phase lag using analytical model is in good agreement with the experimental data for the whole frequency range. The thermal diffusivity of two Ti thin films is determined to be 5 × 10(-6) m(2)∕s, which is 53% of the bulk one.     

磁控溅射Ni56Mn27Ga17合金薄膜的光学反射特性研究

Ni-Mn-Ga磁性形状记忆合金薄膜是非常有用的多功能材料,为考察其光学反射特性,采用磁控溅射技术在单晶硅衬底上沉积了Ni56Mn27Ga17合金薄膜,并对其表面形貌和光学反射特性进行研究。研究结果表明,薄膜的表面粗糙度随退火温度的升高而增大;在300～800nm波长范围内,薄膜反射率均随波长的减小而降低,且薄膜整体谱线范围内的反射率随退火温度的升高而降低。     

薄膜厚度对直流脉冲磁控溅射Mo薄膜光电性能的影响

采用直流脉冲磁控溅射方法在SLG衬底上沉积CIGS太阳电池背接触Mo薄膜,研究了薄膜的光学和电学性能随厚度的变化关系。结果表明,随着薄膜厚度的增加,薄膜的电阻率先降低后增加,在厚度284.3nm处电阻率最低,为7.3×10-4Ω.cm。不同厚度的Mo薄膜在各个波长处(200~840nm)反射率都随波长的增加而增大。随着薄膜厚度的增加,平均反射率总的呈下降趋势,在薄膜厚度284.3nm时出现一反射率高峰,其在200~840nm波长范围内的平均反射率达43.33%。     

Technical use of compact micro-onde devices

Due to the very small size of a COMIC (Compact MIcrowave and Coaxial) device [P. Sortais, T. Lamy, J. Me?dard, J. Angot, L. Latrasse, and T. Thuillier, Rev. Sci. Instrum. 81, 02B31 (2010)] it is possible to install such plasma or ion source inside very different technical environments. New applications of such a device are presented, mainly for industrial applications. We have now designed ion sources for highly focused ion beam devices, ion beam machining ion guns, or thin film deposition machines. We will mainly present new capabilities opened by the use of a multi-beam system for thin film deposition based on sputtering by medium energy ion beams. With the new concept of multi-beam sputtering (MBS), it is possible to open new possibilities concerning the ion beam sputtering (IBS) technology, especially for large size deposition of high uniformity thin films. By the use of multi-spots of evaporation, each one corresponding to an independent tuning of an individual COMIC ion source, it will be very easy to co-evaporate different components.     

类镍钽软X射线激光用多层膜反射镜的研制

设计并制备了工作波长为4.48 nm类镍钽软X射线激光用多层膜反射镜。选择C r/C、C r/Sc为多层膜材料对,模拟了多层膜非理想界面对多层膜反射率的影响。采用直流磁控溅射技术在超光滑硅基片上制备了C r/C、C r/Sc多层膜。利用X射线衍射仪测量了多层膜结构,在德国Bessy II同步辐射上测量了多层膜的反射率,C r/C,C r/Sc多层膜峰值反射率分别为7.50%,6.12%。     

Comparison of ion beam sputtered chromium and iridium films for electron microscopy applications

The structure and composition of thin, conductive metallic films of chromium and iridium that are typical of the coatings used for electron microscopy is described. The purpose of this study was to determine the grain size and composition of the films deposited, with thicknesses of 1 nm, 2.5 nm, and 5 nm, onto amorphous carbon films using ion beam sputtering with argon as the sputtering gas. A comparison between chromium films deposited under conditions of liquid nitrogen (LN) trapping or of no trapping revealed slight differences in their microstructure. As expected, the grain size of the films increased with the thickness, and the average grain sizes varied between 10 and 25 nm. Grain size was also found to depend on the source of ion beam energy; the correlation between grain size and beam energy was more pronounced in the iridium films than in the chromium films. This effect was greater when the deposition chamber was not LN trapped. As the ion beam energy increased from 18 W to 24 W, there was a corresponding increase in grain size in some of the films. Although transmission electron diffraction analysis indicated the presence of about 5% chromium oxide in the chromium films, no oxide was detected in the iridium films.     

Structure analysis of sputter-coated and ion-beam sputter-coated films: a comparative study

Gold, platinum and tungsten films were deposited by low energy input (7 mA, 450 V), or high deposition rate (80 mA, 1500 V), diode sputter coating and by ion beam sputter coating. Film structures on Formvar coated grids and on the surface of coated erythrocytes, resin embedded, sectioned, and recorded at high magnification in a TEM were compared using computer-assisted measurements and analysis of film thickness and grain size. The average grain size of the thinnest gold and platinum films was relatively independent of the mode or rate of deposition but as the film thickness increased, significant differences in grain size and film structure were observed. Thick platinum or gold films deposited by low energy input sputter coating contained large grain size and electron transparent cracks; however, more even films with narrower cracks but larger grain size were produced at high deposition rates. Ion beam sputter coated gold had relatively large grain size in 10 nm thick films, but beyond this thickness the grains coalesced to form a continuous film. Platinum films deposited by ion beam sputter coating were even and free of electron transparent cracks and had a very small grain size (1–2 nm), which was relatively independent of the film thickness. Tungsten deposition either by low energy input or ion beam sputter coating resulted in fine grained even films which were free of electron transparent cracks. Such films remained granular in substructure and had a grain size of about 1 nm which was relatively independent of film thickness. Tungsten films produced at high deposition rates were of poorer quality. We conclude that thick diode sputter coated platinum and gold films are best deposited at high deposition rates provided the specimens are not heat sensitive, the improvement in film structure being more significant than the slight increase in grain size. Thick diode or ion beam sputter coated gold films should be suitable for low resolution SEM, and thin discontinuous gold films for medium resolution SEM. Diode sputter coated platinum should be suitable for medium resolution SEM and ion beam sputter coated platinum for medium and some high resolution SEM. 1–5 nm thick tungsten films, deposited by low energy input or ion beam sputter coating should be suitable for high resolution SEM, particularly where contrast is of less importance than resolution.     

Ion beam-sputtered and magnetron-sputtered thin films on cytoskeletons: A high-resolution tem study

A comparison of ion beam-sputtered and magnetron-sputtered thin platinum (Pt) and tungsten (W) films was made. Cytoskeletons from detergent extracted glioma cells grown on gold grids were coated with Pt or W at thicknesses of 1, 1.5, and 2.5 nm. Transmission electron micrographs were taken at high magnification and the granularity of the metal films was evaluated both on the Formvar film and the filaments of the cytoskeleton. In order to make a comparison between the two deposition methods, the metal deposition rate must be equal when corresponding thicknesses are made. Since ion beam sputtering generally is a slower process than magnetron sputtering, an increased target to specimen distance was necessary with the latter technique. This resulted in a coarser granularity of the W films as compared with the ion beam sputtered. The Pt, however, showed no marked difference between the two techniques at equal deposition rates. The study also demonstrated that varying the deposition rate caused differences in the granularity of the magnetron-sputtered Pt and W films, even if the voltage of the target was kept constant. Decreasing the target to specimen distance which increased the deposition rate resulted in a finer granularity of both the Pt and the W films. At the highest deposition rate the granularity of both the Pt and W films was comparable with the granularity of the ion beam-sputtered films.     

A novel absorptive thin film for laser welding in optoelectronic device capsulation

1Introduction Laserweldingisakindofkeytechniquein thefieldofoptoelectronicdevicecapsulation.Thisprovedefficienttechniqueisincreasingly appliedinthewave guidematerialssuchas SiO2,Si,SiCandLiNbO3.Ouroriginalsugges tionistojointtheLiNbO3wave guideandV groovefiberopticassemblyonthesurfaceofthe steelsubstrate.Generally,agglutinationisthe regularchoice.Actually,thecorrespondinglyhighexpan sioncoefficientandshortlifespanoftheadhe sivesarethegreatestdrawbacks,thoughitisa convenienttechnique.Tin …