加热和水处理共同调控PbI2薄膜形貌及其在钙钛矿太阳电池中的应用研究

该文研究加热和水处理共同作用对PbI₂薄膜形貌的调控和对钙钛矿太阳电池性能的影响。使用的钙钛矿体系为（FAPbI₃）_1-x（MAPbBr₃）_x,并在两步法工艺基础上对PbI₂薄膜进行不同时间加热和短时间水处理可将PbI₂薄膜制备成多孔结构。将双重处理后的PbI₂薄膜制备成钙钛矿薄膜后,可发现钙钛矿薄膜质量明显提升,表现在：钙钛矿的晶粒尺寸明显增大、结晶性增强、吸光能力提升、载流子传输更快。且此种方式能有效调控钙钛矿薄膜中的PbI₂残留量。在器件效率方面,只对PbI₂薄膜进行加热处理制备的电池的开路电压、短路电流、填充因子和效率分别为1.05 V、23.12 mA/cm²、73.81%和17.92%,而在最优双重处理工艺下制备的电池的这4个相应的参数分别为1.09 V、24.75 mA/cm²、77.85%和21.10%。     

上转换材料TiO2∶Er3+/Yb3+/Li+的制备及其在玻璃盖板中的应用

采用溶胶凝胶法和旋转镀膜法制备Er³⁺/Yb³⁺/Li⁺掺杂TiO₂胶体和薄膜,确定上转换材料最优制备方案为n(乙酰丙酮)∶n(C₁₆H₃₆O₄Ti∶H₂O)∶n(异丙醇)∶n(Er(NO₃)₃·5H₂O)∶n(Yb(NO₃)₃·5H₂O)∶n(LiNO₃)=1∶3∶9∶70∶0.12∶0.60∶0.15(物质的量之比),水的滴加速率为10 s/滴,溶液pH值为2~3,溶胶呈透明均匀淡黄色。吸收光谱在近红外区峰值明显。可见光透光率最高可达94.42%,较普通玻璃提高1%~2%。光伏组件通过光电转换效率测量系统进行检测,玻璃盖板镀膜后光伏组件的光电转换效率从16.5%升至17.2%,增加约0.7%。研究结果表明,该薄膜可提高玻璃盖板透光率,扩大光伏组件光谱吸收范围,增加其光电转换效率。     

锑基硫属化合物半导体及太阳电池

锑基硫属化合物是一类性质稳定、环境友好、元素含量丰富、带隙连续可调、光电性质优异的半导体材料,包括硒化锑（Sb₂Se₃）、硫化锑（Sb₂S₃）以及硒硫化锑[Sb₂(S,Se)₃]等。其中,Sb₂(S,Se)₃的带隙和太阳光谱的匹配度较高,比较适合作为太阳电池的光吸收层材料。以Sb₂(S,Se)₃为光吸收层的太阳电池取得了10% 的认证能量转换效率,显示了锑基硫属化合物太阳电池的巨大潜力。本文详细阐述了锑基硫属化合物的材料及光电特性、薄膜制备工艺及缺陷特性。结合近年来锑基硫属化合物太阳电池的研究进展,提出进一步提高锑基硫属化合物太阳电池性能的方向和策略。     

基于不同类型全无机钙钛矿材料的太阳能电池研究

随着新型光伏电池的发展,卤族钙钛矿太阳能电池备受关注,其中全无机钙钛矿材料因其良好的热稳定性、高吸光系数、带隙可调、制备工艺简单等优点,在光电和光伏器件领域具有良好的应用前景,基于全无机钙钛矿太阳能电池的最高效率达到了20.4%。本文总结了基于ABX₃、A₂BX₆、A₂B¹⁺B³⁺X₆以及类钙钛矿材料等全无机钙钛矿太阳能电池的光电转换效率及稳定性的对比,并着重分析造成效率和稳定性差异的影响因素及优化改良方法,最后对全无机钙钛矿太阳能电池材料面临的挑战进行了展望。     

晶硅异质结太阳电池nc-Si:H/nc-SiOx:H叠层窗口层研究

该研究制备高电导、高透明的磷掺杂氢化纳米晶硅氧(nc-Si O_x:H)薄膜,应用于晶硅异质结(SHJ)太阳电池的窗口层以替代传统的氢化非晶硅(a-Si:H)薄膜。与以a-Si:H薄膜为窗口层的电池相比,短路电流密度提高0.5 m A/cm²,达到38.5 m A/cm²,填充因子为82.7%,光电转换效率为23.5%。实验发现,在nc-Si O_x:H薄膜沉积前对本征非晶硅层表面进行处理,沉积1 nm纳米晶硅(nc-Si:H)种子层,可改善nc-Si O_x:H薄膜的晶化率,降低薄膜中的非晶相含量。与单层nc-Si O_x:H窗口层的电池相比,nc-Si:H/nc-Si O_x:H叠层结构提高电池填充因子,达到83.4%,光电转换效率增加了0.3%,达到23.8%。     

碘三离子后处理对钙钛矿太阳电池的影响研究

采用碘三离子(I₃^-)作为提升钙钛矿太阳电池性能的界面修饰材料，对钙钛矿体相及上层空穴传输材料的接触界面进行修饰和改性，钝化光活性层上表面缺陷，以优化光电转换器件的转换效率。由反溶剂法和后处理的形式，制备平面异质结电池，运用该界面钝化策略改善后的器件效率达到18.9%，且电池的稳定性也得到增强，600 h后仅有5%的性能衰减。通过物相和光电性质等表征与测试，系统地研究电池的形貌及性能参数，探究不同浓度的I₃^-对器件性能的影响作用和机理。研究发现，该缺陷钝化策略对钙钛矿膜层进行处理后，能有效改善钙钛矿材料的结晶性，减少其表面陷阱态缺陷，降低钙钛矿与空穴传输层的载流子界面传输势垒，且I₃^-与钙钛矿能形成钝化层，起到隔绝水氧的作用，使其稳定性得到改善。     

电子传输层锂盐掺杂对Cs2AgBiBr6双钙钛矿太阳电池性能的影响研究

电子传输层是影响钙钛矿太阳电池性能的重要因素。常用的介孔二氧化钛(mp-TiO₂)电子传输层存在较多表面缺陷，电荷提取效率较低，复合几率高。利用双(三氟甲烷磺酰)亚胺锂(LiTFSI)对mp-TiO₂进行锂盐掺杂，并将其应用于Cs₂AgBiBr₆双钙钛矿太阳电池(下文简称为“Cs₂AgBiBr₆太阳电池”)中，以研究锂盐掺杂对Cs₂AgBiBr₆薄膜和Cs₂AgBiBr₆太阳电池性能的影响。研究结果表明：1)锂盐掺杂改善了Cs₂AgBiBr₆薄膜的结晶度，降低了其缺陷态密度，促进了电子传输层/钙钛矿界面处的电荷转移；2)掺杂的锂盐最优质量浓度为10 mg/mL，在该掺杂浓度下制备的Cs₂AgBiBr₆太阳电池的短路电流密度从1.92 mA/cm²提升到2.43m...     

空气中制备NiOx基钙钛矿太阳能电池和光电探测器

钙钛矿材料可通过溶液法制备,但也易受溶剂氛围影响,导致膜的质量和可重复性降低。开发空气中高质量钙钛矿膜的制备工艺,可以大幅降低成本和提升钙钛矿材料的应用价值。深入研究空气中水汽对中间相和成膜过程的影响,有助于指导空气中的制备工艺参数。有水存在时,PbI₂-DMSO中间相上的DMSO更容易脱去,导致由配位更多DMSO的中间相向配位更少DMSO的中间相转变;同时,有水存在时更容易生成大尺寸的MA₂Pb₃I₈?2DMSO中间相,不利于形成致密的钙钛矿膜。本文主要简述在空气中分别采用“预成核”法和“气-液-固”法制备高质量钙钛矿薄膜,用于钙钛矿太阳能电池和窄带光电探测器。     

石墨烯包封Na3V2(PO4)3用作钠离子电池负极材料的电化学性能探究

具有三维网络结构的NASICON型Na₃V₂(PO₄)₃材料,由于其稳定的电压平台,较高的理论容量（117 mA∙h/g),被视为一种具有良好应用前景的钠离子电池负极材料。采用溶剂热和进一步热处理的方式,获得石墨烯包封Na₃V₂(PO₄)₃的复合材料[Na₃V₂(PO₄)₃/G],有效提高了Na₃V₂(PO₄)₃的电子导电性。在0.01 ~ 3.00 V电压区间,0.2 C倍率进行测试时,Na₃V₂(PO₄)₃/G复合材料在230圈循环后,其放电比容量保持在100.9 mA∙h/g,容量保持率高达68.4%,即使在5 C倍率,其放电比容量仍可达65.2 mA∙h/g。然而,纯相Na₃V₂(PO₄)₃的放电比容量仅为47.4 mA∙h/g,容量保持率仅为44.7%,在5 C倍率时,其放电比容量仅为25.1 mA∙h/g,证实石墨烯包封结构能显著提升Na₃V₂(PO₄)₃的循环稳定性和倍率性能。     

Capacitive performance and cycling stability of NixCo1-x(OH)2 xerogels

研究了Ni_xCo_1-x(OH)₂干凝胶中钴含量对其电性能及循环稳定性的影响。用溶胶-凝胶法制备了Ni_xCo_1-x(OH)₂干凝胶材料,用液氮吸附、XPS和XRD研究了含钴Ni(OH)₂干凝胶的组成和结构,用恒电流技术研究了它们的电容性能。结果表明,Ni_xCo_1-x(OH)₂干凝胶具有较高的比表面积和丰富的中孔;添加钴改善了Ni_xCo_1-x(OH)₂干凝胶的倍率性能,当钴含量达到24%时效果最佳;充放电后Co_xNi_1-x(OH)₂干凝胶的晶态结构仍是β-Ni(OH)₂晶相结构,钴含量20%以上的Co_xNi_1-x(OH)₂干凝胶充放电后微晶尺寸变化不明显;组成的活性炭/ Ni_0.76Co_0.24(OH)₂干凝胶电容器20 mA/cm²充放电循环时,库仑效率达到95%以上,循环100000次以上,电容器的比容量仍保持在90%以上。在长循环过程中,Ni_0.76Co_0.24(OH)₂干凝胶的微晶尺寸变化不大,微晶晶胞a轴逐渐变大、c轴逐渐缩小,晶胞参数趋向理想的β-Ni(OH)₂晶体。     

电纺AZO NWs电子传输层提高钙钛矿太阳电池性能的研究

研究通过静电纺丝技术制备不同掺铝比例的氧化锌纳米线(AZO NWs),并将其作为电子传输层来提高钙钛矿太阳电池效率。首先使用静电纺丝和煅烧工艺制备出表面光滑连续、形貌均匀、长径比达～10~5的AZO NWs,然后将AZO NWs作为电子传输层应用于钙钛矿太阳电池。与单层SnO₂电子传输层的电池相比,加入AZO NWs后可有效提高电池的短路电流(J_sc)和填充因子(FF)。实验发现,掺Al为2%(摩尔分数)时得到的器件最优效率(PCE)可达到18.41%,比单层SnO₂电子传输层器件提高了13.21%。器件性能提高的主要原因是掺Al后增加了传输层的电子浓度,同时纳米线增加了电子传输层与活性层的接触界面,提高了导电性和传输能力。     

Optical and electrochemical characteristics of niobium oxide films prepared by sol-gel process and magnetron sputtering A comparison

Electrochromic niobia (Nb₂0₅) coatings were prepared by the sot-gel spin-coating and d.c. magnetron sputtering techniques. Parameters were investigated for the process fabrication of sol-gel spin coated Nb₂0₅ films exhibiting high coloration efficiency comparable with that d.c. magnetron sputtered niobia films. X-ray diffraction studies (XRD) showed that the sot-gel deposited and magnetron sputtered films heat treated at temperatures below 450°C, were amorphous, whereas those heat treated at higher temperatures were slightly crystalline. X-ray photoelectron spectroscopy (XPS) studies showed that the stoichiometry of the films was Nb₂0₅. The refractive index and electrochromic coloration were found to depend on the preparation technique. Both films showed low absorption and high transparency in the visible range. We found that the n, k values of the sot-gel deposited films to be lower than for the sputtered films. The n and k values were n = 1.82 and k = 3 × 10⁻³, and n = 2.28 and K = 4 × 10⁻³ at 530 urn for sot-gel deposited and sputtered films, respectively. The electrochemical behavior and structural changes were investigated in 1 M LiC10₄/propylene carbonate solution. Using the electrochemical measurements and X-ray photoelectron spectroscopy, the probable electrode reaction with the lithiation and delithiation is Nb₂O₅ + x Li⁺ + x e⁻ ↔ Li_xNb₂0₅. Cyclic voltametric (CV) measurements showed that both Nb₂0₅ films exhibits electrochemical reversibility beyond 1200 cycles without change in performance. “In situ” optical measurement revealed that those films exhibit an electrochromic effect in the spectral range 300 < λ < 2100 nm but remain unchanged in the infrared spectral range. The change in visible transmittance was 40% for 250 nm thick electrodes. Spectroelectrochemical measurements showed that spin coated films were essentially electrochemically equivalent to those prepared by d.c. magnetron sputter deposition.     

Defect reduction in electrochemically deposited CdS thin films by annealing in 02

Using the electrochemical deposition method, CdS thin films were deposited from acid solutions (pH = 2.5) containing CdS0₄ and Na₂S₂0₃ on indium-oxide coated glass substrates. These films were annealed in N₂, air, or O₂ atmosphere at 200–500°C for 30 min. Photoluminescence spectra were measured at 77 K. For the films annealed in N₂, the band edge emission became weaker and the luminescence due to defects shifted to longer wavelengths as the annealing temperature was raised above 300°C. However, for the films annealed in air or O₂, the band edge emission was observed strongly irrespective of the annealing temperature and the luminescence due to defects was weak. Thus the O₂ annealing is useful for the defects reduction.     

Preparation and properties of transparent conducting zinc oxide and aluminium-doped zinc oxide films prepared by evaporating method

Undoped and aluminium-doped zinc oxide films have been prepared by thermal evaporation of zinc acetate [Zn(CH₃COO)₂ 2H₂O] and aluminium chloride [AlCl₃] onto a heated glass substrate. The structural and optoelectrical properties of the films have been studied. The effects of heat treatment for the as-deposited films in air and vaccum are investigated. Highly transparent films with conductivity as low as 2×10⁻³ Ω cm can be produced by controlling the deposition parameters. The electron carrier densities are in the range 0.2–7×10¹⁹ cm⁻³ with mobilities of 22–58 cm² V⁻¹ s⁻¹.     

Characterization of Cu(InxGa1−x)2Se3.5 thin films prepared by rf sputtering

Cu(In_xGa_1−x)₂Se_3.5 thin films were fabricated by rf sputtering from CuIn_xGa_1−xSe₂ and Na mixture target by controlling the mixture ratio. X-ray diffraction analyses show that the structure of Cu(In_xGa_1−x)₂Se_3.5, thin films is different from chalcopyrite structure: especially, CuIn₂Se_3.5 thin films have a defect chalcopyrite structure. The lattice parameters for Cu(In_xGa_1−x)₂Se_3.5 thin film are slightly smaller than those for CuIn_xGa_1−xSe₂ thin film and linearly decreased with increasing Ga content. The optical absorption coefficients for Cu(In_xGa_1−x)₂Se_3.5, thin films exceed 2 × 10⁴ cm⁻¹ in energy region above the fundamental band edge. The band gap for Cu(In_xGa_1−x)₂Se_3.5 thin films is larger than that for CuIn.Ga_1−x2Se₂ with the same Ga content and increased with increasing Ga content.     

Generation of enhanced stability of SnO/In(OH)3/InP for photocatalytic water splitting by SnO protection layer1

InP shows a very high efficiency for solar light to electricity conversion in solar cell and may present an expectation property in photocatalytic hydrogen evolution. However, it suffers serious corrosion in water dispersion. In this paper, it is demonstrated that the stability and activity of the InP-based catalyst are effectively enhanced by applying an anti-corrosion SnO layer and In(OH)₃ transition layer, which reduces the crystal mismatch between SnO and InP and increases charge transfer. The obtained Pt/SnO/In(OH)₃/InP exhibits a hydrogen production rate of 144.42 µmol/g in 3 h under visible light illumination in multi-cycle tests without remarkable decay, 123 times higher than that of naked In(OH)₃/InP without any electron donor under visible irradiation.     

Preparation and properties of sprayed CuGa0.5In0.5Se2 thin films

CuGa_0.5In_0.5Se₂ thin films were prepared by spray pyrolysis technique at substrate temperatures (T_s) in the range 100–400°C. The films prepared at T_s = 300–350°C were nearly stoichiometric, polycrystalline with a strong preferred (112) orientation. The resistivity of the films varied in the range, 50–1000 Ω cm and the evaluated optical band gap was 1.35 eV.