Ag-Al共掺杂ZnO薄膜的结构及其光学性能的研究

采用溶胶-凝胶工艺在普通玻璃基片上制备了Ag+、Al3+共掺Zno薄膜,通过XRD、紫外分光光度计和金相显微镜等设备,研究了掺杂Ag和Al对半导体ZnO薄膜组织结构和光学性能的影响.结果表明,掺杂Ag和Al对ZnO薄膜结构和光学性能的影响因浓度不同而有差异.Ag+、Al3+掺杂浓度为1%时,摩尔比为4:1;固定Ag+浓度为1.5%,Al3+浓度为0.5%;Ag+、Al3+浓度为3%,摩尔比为4:1,提拉次数15次时,ZaO薄膜的结构、透光率最好.     

Na、Mg共掺杂ZnO薄膜的结构及性能研究

在玻璃衬底上,采用溶胶-凝胶法制备Na、Mg共掺杂的ZnO薄膜,Mg含量不变,改变Na的掺杂含量,研究掺杂浓度、退火温度及镀膜层数对薄膜结构和光学性能的影响.结果表明:薄膜形貌在550℃退火时较好;Na离子含量会影响薄膜(002)晶面的生长;镀膜层数增加,薄膜有明显红移现象并且透光率会降低.     

锡掺杂量对胶体法制备ITO薄膜光电性能的影响

以金属铟和锡盐为原料采用胶体法制备Sn掺杂三氧化二铟(ITO)前驱物浆料,通过提拉法在镀有SiO2薄层的浮法玻璃基片上制备透明导电ITO薄膜.研究了不同Sn掺杂量5%～20%(质量分数,下同)对ITO薄膜光电性能的影响.用分光光度计和四探针电阻仪检测ITO薄膜,样品的光电性能,并对其进行X射线衍射分析.结果表明:当Sn掺杂量为10%时薄膜的方电阻最小,为153 Ω/□,不同Sn掺杂的ITO膜均为单一的立方铁锰矿结构;薄膜在可见光区平均透过率≥82%.基于对不同Sn掺杂量的ITO薄膜XRD数据分析,研究了ITO薄膜的结构特性,并讨论了薄膜的导电机制.结果表明:胶体法制备的ITO薄膜的自由载流子主要来源于氧缺位提供的导电电子.通过对ITO薄膜吸收系数的线性拟合表明,薄膜中自由电子由价带至导带的跃迁属于直接跃迁,且光学能隙值随Sn掺杂量的增加呈先增加后减小的趋势,在Sn掺杂量为15%时为最大值3.65 eV.     

La、Nd、Bi共掺杂制备TiO2电致变色薄膜及其性能研究

为了提高TiO2薄膜的光学属性和着色效率,采用溶胶-凝胶工艺,以钛酸丁酯为前驱体在ITO导电玻璃基片表面制备了La、Nd、Bi共掺杂TiO2薄膜。采用XRD、UV-vis和化学工作站等手段研究了TiO2薄膜的结构和表面的光学和电致变色性能。结果表明:在400、500和600℃热处理的二氧化钛干凝胶中形成锐钛矿型二氧化钛,且热处理温度越高,晶体发育越完整。La、Nd、Bi掺杂TiO2增加了TiO2八面体的排列无序性,导致非晶化程度提高。体积分数为12%的钛酸丁酯相应制备的薄膜具有优良的电致变色性能。500℃热处理的TiO2薄膜电致变色性能最为优异。实验进行了La、Nd、Bi单独掺杂TiO2薄膜的性能分析,单独掺杂摩尔分数为8%La、18%Nd、6%Bi的TiO2薄膜具有较优异的变色性能,单独掺杂变色效果的顺序是6%Bi<8%La<18%Nd。La、Nd、Bi共掺杂锐钛矿型TiO2仍然具有很高的非晶化程度,且当掺杂摩尔比La:Nd:Bi=4:10:2时,取得薄膜最佳循环伏安特性,掺杂TiO2非晶化程度最高。     

La、Nd、Bi共掺杂制备TiO_2电致变色薄膜及其性能研究（英文）

为了提高TiO_2薄膜的光学属性和着色效率,采用溶胶-凝胶工艺,以钛酸丁酯为前驱体在ITO导电玻璃基片表面制备了La、Nd、Bi共掺杂TiO 2薄膜。采用XRD、UV-vis和化学工作站等手段研究了TiO 2薄膜的结构和表面的光学和电致变色性能。结果表明:在400、500和600℃热处理的二氧化钛干凝胶中形成锐钛矿型二氧化钛,且热处理温度越高,晶体发育越完整。La、Nd、Bi掺杂TiO 2增加了TiO 2八面体的排列无序性,导致非晶化程度提高。体积分数为12%的钛酸丁酯相应制备的薄膜具有优良的电致变色性能。500℃热处理的TiO 2薄膜电致变色性能最为优异。实验进行了La、Nd、Bi单独掺杂TiO 2薄膜的性能分析,单独掺杂摩尔分数为8%La、18%Nd、6%Bi的TiO 2薄膜具有较优异的变色性能,单独掺杂变色效果的顺序是6%Bi8%La18%Nd。La、Nd、Bi共掺杂锐钛矿型TiO 2仍然具有很高的非晶化程度,且当掺杂摩尔比La:Nd:Bi=4:10:2时,取得薄膜最佳循环伏安特性,掺杂TiO 2非晶化程度最高。     

ZnO掺杂对ZnSb相变薄膜结构和电学特性的影响

目的通过掺杂不同量的ZnO提升ZnSb相变薄膜的晶化温度和晶态膜电阻。方法采用磁控溅射双靶共溅方式制备不同含量ZnO掺杂的ZnSb薄膜,使用真空四探针设备原位测试薄膜电阻随温度的变化情况,用EDS、DSC、XRD、Raman、FESEM、UV-Vis分别对薄膜的成分、晶化温度和熔点、掺杂薄膜的结构、薄膜厚度、表面形貌以及光学带隙进行分析。结果 ZnO掺杂量为1.6%时,Zn O掺杂提升了薄膜的晶化温度和晶态薄膜的电阻,并抑制了ZnSb晶粒的长大。薄膜的晶化温度由253℃提升至263℃,光学带隙由0.37 eV提升至0.38 eV,掺杂薄膜晶粒大小为20 nm左右,远低于未掺杂的50 nm。掺杂薄膜内的O原子更易与Sb结合,过多的Zn O掺杂会使薄膜结晶后形成Sb_2O_3晶粒,使薄膜的晶化温度下降。结论低含量ZnO掺杂的ZnSb薄膜具有更高的晶化温度、更细小的ZnSb晶粒以及更高的膜电阻;过量的Zn O掺杂使薄膜在结晶后产生分离的Sb_2O_3相,恶化薄膜性能。     

氮掺杂石墨烯柔性薄膜的制备及其超电容性能

目的改善超级电容器用石墨烯薄膜的超电容性能。方法采用水热和高温热解法制备多孔氮掺杂的石墨烯柔性薄膜,采用SEM形貌、XRD图谱和等温曲线分析其结构,采用三电极体系测试循环伏安曲线和恒流充放电曲线,分析其超电容性能。结果氮掺杂石墨烯柔性薄膜保持了氧化石墨烯的褶皱透明,同时具有网络式的多孔洞结构。氮气吸脱附测试表明,氮掺杂多孔石墨烯的比表面积为280.78m2/g。氮掺杂石墨烯薄膜在1.0 mol/L硫酸钠溶液中,当电流密度为0.1 A/g时,其比容量达到169 F/g。结论氮原子的掺杂以及氮掺杂石墨烯柔性薄膜的多孔结构可以有效提高石墨烯材料的超电容性能。     

CuCr_(1-x)Mg_xO_2(0≤x≤0.09)薄膜的光电性能

采用射频磁控溅射方法,在石英衬底上制备Mg掺杂的CuCrO2薄膜。通过XRD、紫外吸收光谱及电学性能的测量表征该系列薄膜样品的结构与光电性能。结果表明:退火处理后所有薄膜样品的结晶性良好,均为3R型铜铁矿结构;薄膜的电导率随掺杂量的增加而增大。当x=0.09时,样品的室温电导率可达6.16×10-2S/cm,比未掺杂的CuCrO2提高近400倍,且霍耳测试表明所制备的薄膜为p型导电体。电导率随温度变化关系表明:薄膜样品在200～300K的温度范围内均很好地符合Arrhenius热激活规律;当x=0.09时,最低激活能仅为0.034eV。薄膜的可见光透过率与光学带隙宽度均随掺杂量的增加而减小。     

溶胶-凝胶法制备掺铁钛酸铋铁电薄膜光学性能的研究

通过溶胶-凝胶法制备了不同掺杂浓度的Fe-BTO铁电薄膜以减小其光学带隙,研究不同Fe掺杂浓度对BTO铁电薄膜铁电光伏效应的影响。结果表明,使用溶胶-凝胶法对BTO铁电薄膜掺杂不同浓度的Fe,所制备的薄膜结晶度较好、网状结构明显、空间分布均匀,晶粒大小均一;通过溶胶-凝胶法制备Fe-BTO铁电薄膜在Fe掺杂浓度x=0.9附近可以明显减小其禁带宽度。     

Al-Ag弱掺杂ZnO薄膜的结构和光学特性

采用溶胶凝胶法制备了Al-Ag共掺杂的ZnO薄膜,研究了该ZnO薄膜的表面形貌、微结构和光学性质。结果表明,通过改变Al、Ag掺杂量与Zn的比值,ZnO薄膜呈现出良好的C轴取向。     

Microstructure and optical properties of sprayed γ-CuI thin films for CuInS_2 solar cells

γ-CuI thin films were prepared by a spraying method using acetonitrile as a solvent,CuI and iodine as reagents.The influences of substrate temperature on the structure,topography,and optical properties of CuI films were investigated.Scanning electron microscope(SEM) photos revealed that the shape and grain size of CuI grains were related to substrate temperature.X-ray diffraction results showed that substrate temperature affected the crystalline quality of CuI films.When the substrate temperature was 110°C,...     

The molecular structure of plasma polymerized thiophene and pyrrole thin films produced by double discharge technique

Production of polythiophene (PTH) and polypyrrole (PPY) thin films via double discharge plasma system has been studied. The double discharge system is a superposition of an ordinary low-pressure dc glow discharge and a high-current pulsed one. The glass substrates were located simultaneously at three different positions in the reactor and the thin films were synthesized at constant plasma parameters to evaluate the influence of the position on the molecular structure. And, the as-grown and iodine doped thin films were investigated to find out the correlation between molecular structure variation of the iodine–film interactions, too. The PTH (C₄H₄S) and PPY (C₄H₅N) monomers without using any carrier gases have been used as plasma precursors, each at 1 mbar operating pressure. The thin films were compared by using Fourier transform infrared (FTIR), X-ray photoelectron (XPS), and UV–visible absorption spectroscopy. It is found that the thin films obtained at the pulsed plasma region where the gas phase polymerization is dominated resemble to conventional polymeric structure. The XPS depth profiles revealed that while the stoichiometry of the monomer was almost preserved with the successive depth of PTH samples, but at the PPY one was not preserved. Moreover, the atomic concentration of oxygen and nitrogen observed at the surface of the films significantly drops down beneath the surface which indicates that they could be employed as anti-corrosive materials. It is found that chemical bonding with iodine take place after doping and the value of the optical band gap of polymers (E_g) are reduced proportionally with doping time.     

Studies on the nonlinear optical properties of rf plasma polymerized aniline thin films by open aperture z-scan technique

Plasma polymerized polyaniline (PANI) thin films in their pristine and iodine doped forms were subjected to open aperture z-scan studies in order to investigate the nonlinear optical (NLO) properties of these materials. The investigations were carried out using a Q-switched resonant Nd:YAG laser at a wavelength of 532 nm for various fluences. The z-scan studies revealed that RF PANI thin films exhibit a saturable absorption (SA). Iodine doping modifies the NLO characteristics of these films substantially. These results qualify PANI thin films as potential materials for NLO materials. Investigations on the NLO properties of pristine (PANI) and iodine doped polyaniline (dPANI) thin films in its plasma polymerized form are reported for the first time.     

In doped ZnO thin films

ZnO thin films were deposited by ultrasonic spray technique, zinc acetate was used as starting solution with a molarity of 0.1 M. A set of indium (In) doped ZnO (between 2 and 8 wt%) thin films were grown on glass substrate at 350 °C. The present work is focused on the influence of the doping level on the structural, optical and electrical films properties. Optical film characterization was carried by using UV-visible transmission spectroscopy, the optical gap was deduced from absorption. From X ray diffraction (XRD) analysis, we have deduced that ZnO films are formed with nanocrystalline structure with preferential (0 0 2) orientation. The grain size is increased with In doping from 28 to 37 nm. Electrical characterization was achieved using two-probes coplanar structure, the measured conductivity varies from 2.3 to 5.9 Ω cm⁻¹ when increasing the doping level. However the optical gap is reduced from 3.4 to 3.1 eV.     

Influence of iron doping on morphological,structural and optical properties of zinc oxide thin films prepared by dip-coating method

Undoped zinc oxide and iron-doped zinc oxide thin films have been deposited by the sol-geldipcoating method. The Fe/Zn nominal volume ratio was 5% in the solution. The effects of Fe incorporation on morphological, structural, and optical properties of ZnO films were investigated. The scanning electron microscopy measurements showed that the surface morphology of the prepared thin films was affected by Fe doping. The X-ray diffraction patterns of the thin films showed that doped incorporation leads to substantial changes in the structural characteristics of ZnO thin films. The optical absorption measurements indicated a band gap in the range of 3.31 to 3.19 eV. The X-ray photoelectron spectroscopy demonstrated that Fe is incorporated in the ZnO matrix with 6.5 atomic percent (at %). The energy dispersive spectroscopy studies indicated the formation of ZnO with high efficiency.     

Effects of thermal treatment on the characteristics of boron and tantalum-doped ZnO thin films deposited by the electrospraying method at atmospheric pressure

Metal-doped (B and Ta) ZnO thin films were deposited by the electrospraying method onto a heated glass substrate. The structural, electrical and optical properties of the films were investigated as a function of dopant concentration in the solution and also as a function of annealing temperature. The results show that all the prepared metal-doped ZnO films were polycrystalline in nature with a (0 0 2) preferred orientation. As the amounts of dopant were increased in the starting solution, the crystallinity and transmittance decreased. On the other hand, heat treatment of the films enhanced the transmittance, Hall mobility, carrier concentration and crystallinity. It was also observed that 2 at.% is the optimal doping amount in order to achieve the minimum resistivity and maximum optical transmittance. As-deposited films have high resistivity and low optical transmittance. The annealing of the as-deposited thin films in air resulted in the reduction of resistivity. Depending on the characteristics of dopant, mainly ionic radius, the effects of dopant were studied on the properties of ZnO thin films. Boron and tantalum have been considered as dopants, tantalum being the superior of the two, since it showed the lower resistivity and higher carrier concentration as well as higher mobility. The minimum value of resistivity was 1.95 × 10^− 4 Ω cm (15 Ω/□) with an optical transmittance more than 93% in the visible region and minimum resistivity of 2.16 × 10^− 4 Ω cm (18 Ω/□) with an optical transmittance greater than 96% for 2 at. % tantalum- and boron-doped ZnO films respectively. The present values of resistivities were closer to the indium tin oxide (ITO) resistivity and also closest to the lowest resistivity values among the ZnO films that were previously reported. The prepared films exhibit the good crystalline structure, homogenous surface, high optical transmittance and low resistivity that are preferable for optical devices.     

Conductive Poly(3-methylthiophene) Thin Films

The work described herein represents an efficient method in the deposition of poly(3-methylthiophene),P3MeTh,thin films utilizing a microwave plasma system in combination with a simultaneous doping with iodine.It was envisaged that,an alternative poly(3-methylthiophene),P(3MeTh),with an electron donating methyl substituent,would reduce the degree of ring opening which reportedly occur to a certain extent during the plasma polymerization process of its parent compound polythiophene.An alkyl substituent would also increase the solubility of the materials.P(3MeTh)thin film deposition has been performed utilizing microwave-induced plasma polymerization in order to directly grow films on glass substrates.Moreover,simultaneous doping of the so-formed polymer with iodine has been carried out as opposed to the post-synthesis doping method.This is aimed to prolong electrical conducting lifetime of the materials.The synthesized films were characterized by attenuated total reflection fourier transform infrared(ATR FT-IR)spectroscopy and energy dispersive X-ray spectroscopy(EDS)to confirm the incorporation of iodine dopant into the films.Scanning electron microscopy showed uniformly deposited films.It has been observed that the electrical conductivity of the doped film is 2 orders of magnitude higher than the undoped counterpart.The doped fabricated films exhibited UV-vis spectra indicative of increased π-conjugation(536 nm).Furthermore,electrical conductivity of the in situ doped P(3MeTh)is more highly sustained over a longer period of time.     

电化学沉积Nd掺杂ZnO薄膜的结构和光学性质的研究

用电化学沉积方法制备出了Nd掺杂的ZnO薄膜,并研究其结构和光学性质。X-射线衍射谱的结果表明Nd3 替代Zn2 进入到ZnO晶格中,并没有引起杂相的出现。吸收谱的分析表明,随着掺杂浓度的增大,吸收峰向短波长方向移动 ,即发生蓝移。光致发光谱的结果表明随着Nd3 掺杂浓度的增大,紫外峰强度减小,可见光部分强度增大了。     

基于光固化的全固态电致变色器件制备与性能

目的使用聚乙二醇400(Polyethylene Glycol 400,PEG400)掺杂直接将光固化树脂溶于电解液,并通过光固化先液后固制备全固态电解质。方法使用溶胶-凝胶法制备掺杂了聚乙二醇400的WO_3薄膜,用高氯酸锂粉末、聚碳酸酯(Polycarbonate,PC)、聚甲基丙烯酸甲酯(Polymethyl Methacrylate,PMMA)粉末和光固化树脂(UV-cured resin)配制了凝胶态的电解液。采用毛细封装法对制得的WO_3薄膜进行光固化封装。对制得的电致变色器件进行循环响应时间、光透过率和记忆效应测试,使用扫描电子显微镜对薄膜表面形貌进行分析。结果掺杂了聚乙二醇400的WO_3薄膜表面裂痕明显减少,平均粗糙度为3nm,疏松孔隙结构较多,制得的电致变色器件完全着色时只需要0.5s,而未掺杂PEG400制得的电致变色器件完全着色需要4 s,掺杂了PEG400制得的器件完褪色需要0.5 s,而未掺杂的器件需要1.5 s,且掺杂组比未掺杂组的光调制幅度要高出20%,记忆效应也要更好。结论掺杂PEG400可以使WO_3薄膜表面更加均匀,有效地提升了光调制幅度和降低了循环响应时间,记忆效应也有明显的提升。同时,利用光固化技术制备全固态电致变色器件,制备工艺简单,且易于保存。     

Influence of indium doping on the properties of spray deposited CdS0.2Se0.8 thin films

Polycrystalline indium doped CdS_0.2Se_0.8 thin films with varying concentrations of indium have been prepared by spray pyrolysis at 300 °C. The as deposited films have been characterized by XRD, AFM, EDAX, optical and electrical resistivity measurement techniques. The XRD patterns show that the films are polycrystalline with hexagonal crystal structure irrespective of indium doping concentration. AFM studies reveal that the RMS surface roughness of film decreases from 34.68 to 17.76 with increase in indium doping concentration up to 0.15 mol% in CdS_0.2Se_0.8 thin films and further it increases for higher indium doping concentrations. Traces of indium in CdS_0.2Se_0.8 thin films have been observed from EDAX studies. The optical band gap energy of CdS_0.2Se_0.8 thin film is found to decrease from 1.91 eV to 1.67 eV with indium doping up to 0.15 mol% and increase after 0.15 mol%. The electrical resistivity measurement shows that the films are semiconducting with minimum resistivity of 3.71 × 10⁴ Ω cm observed at 0.15 mol% indium doping. Thermoelectric power measurements show that films exhibit n-type conductivity.