表面镀钨层对金刚石/铜复合材料热导率的影响

采用真空微蒸发-扩散镀技术,在金刚石表面镀覆不同厚度的钨层,并结合真空熔渗法制备金刚石铜复合材料。通过X射线衍射分析镀覆层相结构,采用扫描电镜观察镀覆层表面微观形貌和复合材料中金刚石与铜界面结合形貌,分析金刚石表面镀钨层组织、结构及厚度对金刚石/铜复合材料热导率的影响。结果表明:金刚石表面镀覆钨能改善与基体的润湿性;随着镀覆层均匀性和厚度增加,复合材料热导率先增加后减小;完整均匀的镀覆层可以获得较高界面热导。     

金刚石/碳化硅/铝复合材料的热膨胀性能

采用气压浸渗法制备金刚石/碳化硅/铝复合材料,研究复合材料的断口形貌以及界面反应,测试复合材料的热膨胀性能。结果表明:金刚石表面Ti镀层使得其选择性粘附不同于未镀钛金刚石的,而在各个面上均粘附有Al,金刚石与基体间有着良好的界面结合,断裂方式以基体断裂为主,其界面反应后,Ti以Al3Ti和Ti-Al-Si等金属间化合物的形式析出,提高金刚石/铝界面的结合强度,降低复合材料的热膨胀系数;随着金刚石颗粒粒径的增大,金刚石和碳化硅颗粒间粒径比的增大增加了整个复合材料的体积分数,从而降低了其热膨胀系数;金刚石颗粒粒径增大导致热膨胀系数升高。这两方面共同影响复合材料的热膨胀系数,但前者起主导作用;金刚石和碳化硅在不同配比下的热膨胀系数随着复合材料中碳化硅含量的增加逐渐增大,Terner模型与Kerner模型的计算平均值能较好地预测实验结果。     

钛镀层对金刚石/铝导热复合材料的显微组织与热学性能的影响

采用高温盐浴法对金刚石表面进行镀钛处理来改善金刚石和铝基之间的界面结合,镀钛后的金刚石颗粒表面略显粗糙,表面的镀层均匀;采用真空热压烧结法制备高导热金刚石/铝复合材料,研究了金刚石表面镀钛对复合材料显微组织、热膨胀系数和热导率的影响。结果表明:金刚石表面的钛镀层改善了金刚石各晶面与铝基体的结合状态,增加了金刚石和铝之间的界面结合强度;当铝基体在镀钛金刚石颗粒形成的骨架结构中膨胀时,可以被骨架很好的约束,从而降低了复合材料的热膨胀系数;金刚石表面钛镀层减少了复合材料的孔洞,增加了致密度,从而提高了复合材料的热导率。     

高导热金刚石/铜复合材料的导热研究进展

金刚石/铜复合材料具有密度低、热导率高及热膨胀系数可调等优点,且与新一代芯片具有良好的热匹配性能,因此其在高热流密度电子封装领域具有非常广泛的应用前景。然而由于金刚石与铜界面润湿性差,界面热阻高,导致材料热导率比铜还低,限制了其应用。为了改善其界面润湿性,国内外通过在金刚石表面金属化或对铜基体预合金化等手段来修饰复合材料界面,以提高金刚石/铜复合材料的热导率。本文综述了表面改性、导热模型相关的界面理论以及有限元模拟的研究进展,讨论了制备工艺、导热模型和未来发展的关键方向,总结了金刚石添加量、颗粒尺寸等制备参数对其微观组织结构和导热性能的影响规律。     

粉末冶金法制备金刚石/铜复合材料热导率研究

为研制更高热导率的产品,采用粉末冶金法将金刚石与高纯度铜粉热压在一起,制备新型金刚石/铜复合材料。通过正交分析法,研究了金刚石/铜复合材料热导率的影响因素。结果表明:用粉末冶金法制备的金刚石/铜复合材料,其热导率最高为245.89 W/（m·K）。对金刚石/铜复合材料热导率影响最大的因素是金刚石与铜粉的体积比,并且随着体积比的增大,金刚石/铜复合材料热导率逐渐下降。金刚石/铜复合材料的致密度以及界面结合程度是影响金刚石/铜复合材料热导率大小的重要因素,致密度高、界面结合好的复合材料热导率高,反之则低。      

镀层厚度对镀钛金刚石/铝复合材料热导率的影响

通过在金刚石表面镀钛来改善金刚石和铝基体之间的弱界面结合,并用气压浸渗法制备体积分数为60%的镀钛金刚石/铝复合材料。研究镀钛后金刚石颗粒的物相组成、不同镀层厚度和不同颗粒尺寸下复合材料的热导率;用H-J和DEM模型预测复合材料的热导率,并将预测结果与实验值进行对比。结果表明,镀钛后金刚石颗粒的物相由金刚石、碳化钛和钛三相组成;随着镀层厚度的增加,界面传热系数减小,复合材料的热导率减小;颗粒的尺寸越小,这种变化趋势越明显;相对于H-J模型,DEM模型更能准确地预测镀钛金刚石增强的复合材料的热导率;通过计算得出镀钛金刚石/铝复合材料的临界镀层厚度为1.5μm,当超过此临界镀层厚度时,镀层反而不利于复合材料热导率的提高。     

高体积比SiC_p/6063Al复合材料表面预置钛膜及真空钎焊分析

以增强相体积比为60%的Si Cp/6063Al复合材料为母材,首先在母材上磁控溅射钛膜,然后在580℃保温40 min的条件下,采用Al-Si-Mg共晶钎料对复合材料进行真空钎焊.利用扫描电镜、EDS局部能谱分析和XRD衍射的方法对接头的界面组织及断口形貌进行了研究.结果表明,活性钛膜提高了钎料对母材的润湿性,钎焊过程中钎料与镀层、镀层与母材基体界面处均形成了过渡层,且钎料与Si C颗粒间形成致密连接,并在过渡层中发现了Ti C0.981新相.     

镀钛SiC颗粒增强Al 2519复合材料的组织与力学性能（英文）

采用真空蒸镀法对Si C颗粒(SiC_p)表面进行镀Ti改性改善SiC_p/Al复合材料界面结合,采用热压、挤压和热处理等方法制备镀Ti后SiC_p和原始SiC_p增强的Al 2519基复合材料。通过扫描电镜(SEM)和能谱仪(EDS)分析Ti镀层对复合材料组织与性能的影响。结果表明,致密沉积的Ti镀层与SiC_p反应,在界面处形成Ti C和Ti5Si3相;与用原始SiC_p增强的复合材料相比,用Ti镀覆SiC_p增强的复合材料表现出均匀且致密的显微组织且复合材料的相对密度和力学性能得到显著改善。体积分数为15%时,镀Ti后SiC_p增强Al2519复合材料的硬度、断裂应变和拉伸强度达到最优,分别为HB 138.5、4.02%和455 MPa。     

TiO2对金刚石/铜复合材料导热性能的影响

为研究金刚石/铜复合材料界面传热对其导热性能的影响，采用放电等离子烧结制备了添加0.4～1.0 mass%TiO₂的金刚石/铜复合材料，分析了其微观结构、物相组成和热导率，研究了TiO₂对金刚石/铜复合材料导热性能的影响。结果表明：TiO₂的添加使金刚石表面变得粗糙，且在金刚石和铜的界面处形成了TiC过渡层；TiC过渡层有效地改善了金刚石和铜的结合，从而减少了裂纹及孔洞的形成，提高了声子传热效率；添加0.8 mass%TiO₂的金刚石/铜复合材料的热导率为421 W·m^-1·K^-1,达到理论热导率的73%,相比未添加TiO₂的金刚石/铜复合材料(186 W·m^-1·K^-1)提高了1.26倍。     

电子封装用金刚石/铝复合材料的显微组织与热膨胀性能

在金刚石表面镀钛改善金刚石与铝合金之间的界面结合,并用气压浸渗工艺制备镀钛金刚石颗粒增强铝基复合材料。对复合材料的显微组织进行了研究,测试了复合材料的热膨胀系数。结果表明,镀钛金刚石颗粒与铝合金基体之间界面结合良好,材料的断裂以基体断裂为主,同时存在一定量的界面断裂;选用形貌规则的金刚石有利于提高复合材料中金刚石的体积分数,从而降低复合材料的热膨胀系数。     

Preparation of SiCp/Cu composites by Ti-activated pressureless infiltration

Sessile drop technique was used to investigate the influence of Ti on the wetting behaviour of copper alloy on SiC substrate. A low contact angle of 15° for Cu alloy on SiC substrate is obtained at the temperature of 1 100℃. The interfacial energy is lowered by the segregation of Ti and the formation of reaction product TiC, resulting in the significant enhancement of wettability. Ti is found to almost completely segregate to Cu/SiC interface. This agrees well with a coverage of 99.8%Ti at the Cu/SiC interface predicted fi＇om a simple model based on Gibbs adsorption isotherm. SiCp/Cu composites are produced by pressureless infiltration of copper alloy into Ti-activated SiC preform. The volume fraction of SiC reaches 57%. The densiflcation achieves 97.5%. The bending strength varies fi＇om 150 MPa to 250 MPa and increases with decreasing particle size.     

Effect of powder mixing process on the microstructure and thermal conductivity of Al/diamond composites fabricated by spark plasma sintering

Two powder mixing processes, mechanical mixing (MM) and mechanical alloying (MA), were used to prepare mixed Al/diamond powders, which were subsequently consolidated using spark plasma sintering (SPS) to produce bulk Al/diamond composites. The effects of the powder mixing process on the morphologies of the mixed powders, the microstructure and the thermal conductivity of the composites were investigated. The results show that the powder mixing process can significantly affect the microstructure and the thermal conductivity of the composites. Agglomerations of the particles occurred in mixed powders using MM for 30 min, which led to high pore content and weak interfacial bonding in the composites and resulted in low relative density and low thermal conductivity for the composites. Mixed powders of homogeneous distribution of diamond particles could be obtained using MA for 10 min and MM for 2 h. The composite prepared through MA indicated a high relative density but low thermal conductivity due to its defects, such as damaged particles, Fe impurity, and local interfacial debonding, which were mainly introduced in the MA process. In contrast, the composite made by MM for 2 h demonstrated high relative density and an excellent thermal conductivity of 325 W·m-1·K-1, owing to its having few defects and strong interfacial bonding.     

Ti 元素对B4C/Al复合材料力学性能的改善作用研究

B₄C/Al复合材料是目前最理想的中子吸收材料,广泛用于乏燃料储存。本文利用液态搅拌法制备B₄C/Al复合材料,通过添加Ti元素,探讨了界面反应对材料的界面结构和力学性能的影响。研究发现,Ti元素通过参与界面反应,改变了界面结构,在B₄C颗粒表面形成了紧密结合的纳米TiB₂界面层;Ti的添加消除了界面微裂纹、微孔、分离等缺陷。随着界面反应程度的加强,材料强度提高,尤其反应脱落的纳米TiB₂颗粒作为原位第二强化相进一步增强基体。B₄C/Al复合材料断裂过程表现为韧窝延性断裂;TiB₂界面层增强了B₄C颗粒与基体的结合,断裂行为从B₄C-Al界面脱落转变为B₄C颗粒断裂;但过渡的界面反应会形成微韧窝,引起材料延伸率下降。     

Effect of carbide formers on microstructure and thermal conductivity of diamond-Cu composites for heat sink materials

Diamond-copper composites were prepared by powder metallurgy, in which the diamond particles were pre-coated by magnetic sputtering with copper alloy containing a small amount of carbide forming elements (including B, Cr, Ti, and Si). The influence of the carbide forming element additives on the microstructure and thermal conductivity of diamond composites was investigated. It is found that the composites fabricated with Cu-0.5B coated diamond particles has a relatively higher density and its thermal conductivity approaches 300 W/(m·K). Addition of 0.5%B improves the interfacial bonding and decreases thermal boundary resistance between diamond and Cu, while addition of 1%Cr makes the interfacial layer break away from diamond surface. The actual interfacial thermal conductivity of the composites with Cu-0.5B alloy coated on diamond is much higher than that of the Cu-1Cr layer, which suggests that the intrinsic thermal conductivity of the interfacial layer is an important factor for improving the thermal conductivity of the diamond composites.     

热处理对金刚石/2024Al复合材料微观组织和热物理性能的影响

采用挤压铸造法制备粒径为5μm、体积分数为50%的金刚石/2024Al 复合材料。退火处理后对其金相组织界面反应、界面结合情况以及金刚石颗粒的内部缺陷进行观察与分析,并对其热物理性能进行测试与研究。结果表明,金刚石/2024Al 复合材料的组织致密,无明显的气孔、夹杂等缺陷;颗粒为不规则多边形,有棱角,分布比较均匀。透射电镜观察表明,部分金刚石颗粒内部有位错和层错存在,而2024Al 基体中的位错密度较大,金刚石/2024Al界面处有较多的界面反应物生成,可能为Al2Cu。复合材料在20~100°C温度区间内的平均热膨胀系数为8.5×10-6°C-1,退火处理的复合材料其热膨胀系数有一定程度的降低;随着温度的升高,复合材料的平均热膨胀系数也呈现增加的趋势。复合材料的热导率约为100 W/（m·K）,退火处理能够提高复合材料的热导率。     

金刚石/铜复合材料与氧化铝陶瓷的Ag-Cu-Ti活性钎焊(英文)

金刚石/铜复合材料具有低膨胀系数和高热导率等优异性能,使其成为一种理想的电子封装材料。采用97%(72Ag-28Cu)-3%Ti活性钎料对金刚石/铜复合材料和氧化铝陶瓷进行钎焊。发现活性钎料在氧化铝陶瓷和金刚石薄膜表面均具有良好的润湿性,在两者表面的平衡润湿角均小于5°。讨论了主要钎焊条件(如钎焊温度和保温时间等)对接头性能的影响。发现钎焊过程中Ti元素聚集在金刚石颗粒的表面形成TiC化合物,且TiC化合物的形貌与钎焊接头的剪切强度具有紧密联系。推测合适的TiC化合物层厚度可改善钎焊接头的剪切强度,而颗粒状的TiC化合物及过厚的TiC化合物层却会损害钎焊接头的性能。获得的最大剪切强度为117MPa。     

复合稀土氧化物掺杂W-20Cu复合材料的制备及组织性能研究

以偏钨酸铵和硝酸铜为原料,采用EDTA-柠檬酸法制备了含有0~0.8wt.%稀土氧化物( Ce_0.8Sm_0.2O_1.9, SDC)的W-20Cu复合粉体,所制备的复合粉体经压制成型、1250°C烧结2h后获得SDC/W-20Cu复合材料烧结体。对所制备复合粉体进行物相、形貌的表征;研究稀土氧化物的添加对SDC/W-20Cu烧结体的密度、组织结构和物理力学性能的影响。实验结果表明：所制备的W-Cu复合粉体平均粒度为100~200nm;同时,SDC的添加对烧结体的密度和电导率会有轻微的影响,但能够抑制晶粒的长大并明显改善烧结体的力学性能。经1250°C烧结后,SDC/W-20Cu烧结体的相对密度均高于97%;当SDC的添加量为0.6%时,具有最大的抗弯强度和显微硬度,分别是1128MPa和258HV;此外,在室温和600°C的测试条件下,其最大的抗拉强度可以达到580MPa和258MPa。     

Thermal properties of diamond/Al composites by pressure infiltration: comparison between methods of coating Ti onto diamond surfaces and adding Si into Al matrix

This study was pertained to the effects of Ti coating on diamond surfaces and Si addition into Al matrix on the thermal conductivity(TC) and the coefficient of thermal expansion(CTE) of diamond/Al composites by pressure infiltration.The fracture surfaces,interface microstructures by metal electro-etching and interfacial thermal conductance of the composites prepared by two methods were compared.The results reveal that Ti coating on diamond surfaces and only12.2 wt% Si addition into Al matrix could both improve the interfacial bonding and increase the TCs of the composites.But the Ti coating layer introduces more interfacial thermal barrier at the diamond/Al interface compared to adding 12.2 wt% Si into Al matrix.The diamond/Al composite with 12.2 wt% Si addition exhibits maximum TC of 534 W·m~(-1)·K~(-1)and a very low CTE of 8.9×10~(-6)K~(-1),while the coating Ti-diamond/Al composite has a TC of 514 W·m~(-1)·K~(-1)and a CTE of 11.0×10~(-6)K~(-1).