Sn催化的Ga掺杂ZnO纳米线的制备及其光致发光性能研究

采用化学气相沉积的方法,以Sn粉为催化剂制备出大长径比的Ga掺杂ZnO纳米线。采用扫描电子显微镜观察制备的产物,发现样品为直径约25～90nm的纳米线。通过比较不同Ga掺杂含量样品的室温光致发光谱,发现一定掺杂含量的Ga可以提高ZnO纳米线的紫外发光强度,同时,Ga的掺杂也会引起ZnO紫外发光峰的蓝移。随着Ga含量的增加,蓝移程度越来越小,甚至发生红移。Sn的引入只对Ga掺杂ZnO纳米线的蓝绿光有贡献。     

Growth of GaInAs/AlInAs heterostructure nanowires for long-wavelength photon emission

We investigated the growth of GaInAs/AlInAs heterostructure nanowires on InP(111)B and Si(111) substrates in a metalorganic vapor phase epitaxy reactor. Au colloids were used to deposit Au catalysts 20 and 40 nm in diameter on the substrate surfaces. We obtained vertical GaInAs and AlInAs nanowires on InP(111)B surfaces. The GaInAs nanowires capped with GaAs/AlInAs layers show room-temperature photoluminescence. The peak exhibits a blue-shift when the Ga content in the core GaInAs nanowire is increased. For the GaInAs/AlInAs heterostructure growth, it is possible to change the Ga content sharply but Al also exists in the GaInAs layer regions. We also found that the ratios of Ga and Al contents to In content tend to increase and the axial growth rate to decrease along the nanowire toward the top. We were also able to make vertical GaInAs nanowires on Si(111) surfaces after a short growth of GaP and InP.     

Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires

Vertical stacks of (In, Ga)N insertions in GaN nanowires are grown by molecular beam epitaxy. The chemical composition and strain within the structure are probed by a combination of high-resolution x-ray diffraction, transmission electron microscopy, and geometrical phase analysis. The (In, Ga)N insertions are coherently strained. Finite-element simulations strongly support an ineffective [corrected] strain relaxation despite [corrected] the nanowire geometry, leading to high-quality (In, Ga)N/GaN nanowire heterostructures. An intense green photoluminescence emission is observed and attributed to an inter-well transition between the stacked (In, Ga)N insertions.     

Structure and elemental distribution of (Ga,Mn)N nanowires

(Ga,Mn)N nanowires were grown by plasma-assisted molecular beam epitaxy on p-type Si(111) substrates. Chemical composition and elemental distribution of single nanowires were analyzed by energy dispersive X-ray spectroscopy revealing an inhomogeneous Mn distribution decreasing from the surface of the nanowires toward the inner core region. The average Mn concentration within the nanowires is found to be below 1%. High-resolution transmission electron microscopy shows the presence of planar defects perpendicular to the growth direction in undoped and Mn-doped GaN nanowires. The density of planar defects dramatically increases under Mn supply.     

ZnO nanowires by pulsed laser vaporization: synthesis and properties

We report a new pulsed-laser vaporization (PLV) technique to synthesize nanowires of single-crystal ZnO having a wurtzite structure by using colloidal gold nanoparticles as seeding catalysts. The average diameter of the nanowires is approximately 13 nm, with a very narrow range of 7 to 25 nm. The nanowires are straight for the most part, with the axes parallel to the [0001] growth direction. Raman and photoluminescence spectra from the nanowires and bulk ZnO are similar except for a approximately 510 nm band in the nanowires due to oxygen vacancies. The bulk-like vibrational and electronic properties of the nanowires is due to the diameter being larger than the threshold below which quantum confinement-induced effects are expected.     

GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions

GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. After deposition corresponding to a 200 nm thick (Ga,Mn)As layer the nanowires are around 700 nm long. Their shapes are tapered, with typical diameters around 30 nm at the base and 7 nm at the tip. The wires grow along the 111 direction, i.e., along the surface normal on GaAs(111)B and inclined on GaAs(001). In the latter case they tend to form branches. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self-assembled structures for nanospintronics.     

Crabwise ZnO Nanowire UV Photodetector Prepared on ZnO : Ga/Glass Template

Vertical well-aligned and crabwise ZnO nanowires were prepared on patterned ZnO:Ga/glass substrates by reactive evaporation method under different growth conditions. The average length and diameter of vertical well-aligned ZnO nanowires were around 1 mum and 50-100 nm, respectively. In contrast, the average length and diameter of crabwise ZnO nanowires were around 5 mum and 30 nm, respectively. Upon illumination with UV light (lambda = 362 nm), it was found that measured responsivities were 0.015 and 0.03 A/W for the crabwise ZnO nanowire photodetector biased at 10 and 15 V, respectively. Furthermore, a rejection ratio of approximately 10 was obtained for the crabwise ZnO nanowire photodetector with an applied bias of 10 V.     

Room-temperature ferromagnetism in Cu doped GaN nanowires

We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 microB/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L(2,3) edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d9 but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.     

Optical properties of zigzag twinned geometry of Zn2SnO4 nanowires

High-density single-crystalline Zn2SnO4 nanowires have been successfully synthesized by using a simple thermal evaporation method by heating a mixture of ZnO and SnO2 nano powders. The products in general contain various geometries of wires, with an average diameter of 80-100 nm. These nanowires are ultra-long, up to 100 microns. The transmission electron microscopy study showed that these nanowires exhibited zigzag twinned geometry, and grow along the (111) direction. Low-temperature photoluminescence properties of the nanowires were measured, showing a strong green emission band at about 515 nm and a weak peak corresponding to UV emission at about 378 nm, which have not been reported before.     

Fabrication of GaN nanowires and nanorods catalyzed with tantalum

Single-crystalline GaN nanowires and nanorods have been fabricated through ammoniating Ga₂O₃ films catalyzed with tantalum (Ta) by RF magnetron sputtering, and microstructure, morphology and optical properties were investigated in particular. The results indicate that the nanowires have a hexagonal wurtzite structure with size about 50 nm in diameter and more than ten microns in length, however, the nanorods are rod-like structures with smooth surface and 100–300 nm in diameter. The growth direction of these nanostructures are perpendicular to the (100) crystal plane. The photoluminescence spectrum at room temperature exhibits a strong UV light emission band centered at 364 nm.     

Growth and optical properties of ZnO low-dimensional nanostructures

Recent studies on the growth of ZnO nanostructures and their optical properties were reviewed. Using different methods, a variety of ZnO nanostructures, including quantum dots nanotowers, nanotubes, nanorods, nanowires, and nanosheets, displaying zero, one, and two dimensions, have been synthesized. The growth of ZnO low-dimensional nanostructures has been demonstrated. Their optical properties have been studied by means of room-temperature photoluminescence spectra, low-temperature photoluminescence spectra, temperature-dependent photoluminescence spectra, and pressure-dependent photoluminescence spectra. The optical properties can be adjusted by the surface features of ZnO low-dimensional nanostructures. The strong exciton emission has been observed in some nanostructures, showing promising potential in nanodevice applications.     

Synthesis of chainlike In2Ge2O7/amorphous GeO2 core/shell nanocables and their luminescence

Novel chainlike In2Ge2O7/amorphous GeO2 core/shell nanocables were successfully synthesized by the simple thermal evaporation method without the presence of catalyst. The growth process of the nanocables is based on vapor-solid (VS) growth mechanism. Its morphology and microstructures were characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and photoluminescence spectroscopy. Studies indicate that typical chainlike nanocables consist of single crystalline In2Ge2O7 nanowires (core) with diameter of about 30 nm and amorphous GeO2 chainlike nanostructures (shell). Four emission peaks, namely 401 nm, 448.5 nm, 466.5 nm, and 491 nm, were observed in the room-temperature photoluminescence measurements.     

Particle-assisted Ga(x)In(1-x)P nanowire growth for designed bandgap structures

Non-tapered vertically straight Ga(x)In(1-x)P nanowires were grown in a compositional range from Ga(0.2)In(0.8)P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition.     

Synthesis and optical properties of ZnTe single-crystalline nanowires

Single-crystalline ZnTe nanowires with the zincblende structure have been synthesized on silicon (Si) substrates via a vapor phase transport method. The ZnTe (99.99%) powders were used as the source, and 10 nm-thick thermal evaporated gold (Au) film was used as the catalyst. The as-prepared ZnTe nanowires have diameters of 30-80 nm and lengths of more than 10 microm. The products were analyzed by X-ray diffraction, field emission scanning electron microscopy, and high-resolution transmission electron microscopy. Optical properties of these nanowires were investigated by room-temperature Raman scattering spectrum and temperature-dependent photoluminescence measurements. The results show that the as-prepared ZnTe nanowires are of high crystal quality.     

Fabrication and optical properties of Sb-doped CdS nanowires

Sb-doped CdS nanowires with an average diameter of 30 nm and lengths of up to 20-30 μm are fabricated by chemical vapor approach. The as-synthesized products have a single-crystal phase and grow along the <011> direction. The growth of Sb-doped CdS nanowires is suggested for Quasi-vapor-solid mechanism (QVSM). In particular, the PL spectra show enhancing emission peaks that strongly shift to long wavelength (up to 55 nm redshift) with a doping Sb where Sb-doped CdS nanowires are found to be responsible for the different characteristics. The PL mechanism is explained in detail.     

Optical studies of electrodeposited ZnCuTe ternary nanowire arrays

The optical properties of electrodeposited zinc copper telluride (ZnCuTe) ternary nanowires on ITO substrate using polycarbonate membrane (Whatman) of diameter 200,100 and 50?nm have been studied and reported in this paper. Scanning electron microscopy confirmed the formation of the standing nanowires having uniform diameter equal to the diameter of the template used. UV–vis absorption and photoluminescence (PL) spectroscopy were used for optical studies. The optical band gaps of 200, 100 and 50?nm have been calculated as 3.19, 3.39 and 3.57?eV, respectively using UV–vis spectroscopy. The UV–visible absorption spectrometry reveals the absorption spectra of 200, 100 and 50?nm shows a blue shift. UV–visible absorption depicts that the band gap increases with decrease in the diameter size of the nanowires. Several broad emission lines have been observed over a wide wavelength range (390–690?nm) of visible light spectrum in the PL spectra of ZnCuTe nanowires of diameter 200, 100 and 50?nm. A good emission peak at around 615?nm has been observed in all nanowires.     

一维氮化铝纳米线的特性及生长机理研究

以三氯化铝和叠氮化钠为原料,利用复分解反应法在温度为650℃条件下反应3h,成功地制备出呈灰白色粉末的一维单晶氮化铝纳米材料,通过对样品进行XRD、TEM和SAED测试,结果表明,样品为表面光滑的长直形圆柱状六方结构的氮化铝,直径为50nm左右,长度在几个微米以上,晶格常数分别为a=0．268nm,c=0．498nm;AlN紫外吸收谱的研究表明,AlN样品在202nm处具有一个尖锐吸收峰,其对应禁带宽度值约为6．14eV,并采用气-固（VS）生长机理、择优取向原理对一维单晶纳米线的生长进行了解释。     

Synthesis,characterization and application of semiconducting oxide (Cu<Subscript>2</Subscript>O and ZnO) nanostructures

In the present study, we report the synthesis, characterization and application of nanostructured oxide materials. The oxide materials (Cu₂O and ZnO) have been synthesized by electrolysis based oxidation and thermal oxidation methods. Cuprous oxide (Cu₂O) nanostructures have been synthesized by anodic oxidation of copper through a simple electrolysis process employing plain water (with ionic conductivity, ～6 μS/m) as electrolyte. In this method no special electrolytes, chemicals and surfactants are needed. The method is based on anodization pursuant to the simple electrolysis of water at different voltages. Two different types of Cu₂O nanostructures have been found. One type got delaminated from copper anode and was collected from the bottom of the electrochemical cell and the other was located on the copper anode itself. The nanostructures collected from the bottom of the cell are either nanothreads embodying beads of different diameters, ～ 10–40 nm or nanowires (length, ～ 600–1000 nm and diameter, ～ 10–25 nm). Those present on the copper anode were nanoblocks with preponderance of nanocubes (nanocube edge, ～ 400 nm). The copper electrode served as a sacrificial anode for the synthesis of different nanostructures. Aligned ZnO nanorod array has been successfully synthesized by simple thermal evaporation catalyst free method. Detailed structural characterizations revealed that the as synthesized aligned ZnO nanorods are single crystalline, with a hexagonal phase, and with growth along the [0001] direction. The room-temperature photoluminescence spectra showed a weak ultraviolet emission at 380 nm, a broad blue band at 435 nm and a strong orange-red emission at 630 nm. Structural/microstructural characterization of these nanomaterials have been carried out employing scanning (XL-20) and transmission electron microscopic (Philips EM, CM-12 and Technai 20G²) techniques and X-ray diffraction techniques having graphite monochromater with CuKα radiation (λ =1.54439 Å) (X’Pert PRO PAN analytical). The UV-visible absorption spectra were recorded on Model-VARIAN, Cary 100, and Bio UV-visible spectrophotometer. The photoluminescence (PL) measurement was carried out at room temperature with a He-Cd, a laser excited at 325 nm.     

Synthesis,characterization and growth mechanism of ZnO nanowires on NiCl<Subscript>2</Subscript>-coated Si substrates

Well-crystallized ZnO nanowires have been successfully synthesized on NiCl₂-coated Si substrates via a carbon thermal reduction deposition process. The pre-deposited Ni nanoparticles by dipping the substrates into NiCl₂ solution can promote the formation of ZnO nuclei. The as-synthesized nanowires were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectrum. The results demonstrate that the as-fabricated nanowires with about 60 nm in diameter and several tens of micrometers in length are preferentially arranged along [0001] direction with (0002) as the dominate surface. Room temperature PL spectrum illustrates that the ZnO nanowires exist a UV emission peak and a green emission peak, and the peak centers locate at 387 and 510 nm. Finally, the growth mechanism of the nanowires is briefly discussed.     

Selective growth of silica nanowires using an Au catalyst for optical recognition of interleukin-10

The vapor-liquid-solid (VLS) growth procedure has been extended for the selective growth of silica nanowires on SiO(2) layer by using Au as a catalyst. The nanowires were grown in an open tube furnace at 1100?°C for 60?min using Ar as a carrier gas. The average diameter of these bottom-up nucleated wires was found to be 200?nm. Transmission electron microscopy analysis indicates the amorphous nature of these nanoscale wires and suggests an Si-silica heterostructure. The localized silica nanowires have been used as an immunoassay template in the detection of interleukin-10 which is a lung cancer biomarker. Such a nanostructured platform offered a tenfold enhancement in the optical response, aiding the recognition of IL-10 in comparison to a bare silica substrate. The role of nanowires in the immunoassay was verified through the quenching behavior in the photoluminescence (PL) spectra. Two orders of reduction in PL intensity have been observed after completion of the immunoassay with significant quenching after executing every step of the protocol. The potential of this site-specific growth of silica nanowires on SiO(2) as a multi-modal biosensing platform has been discussed.