Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

Recently, α‐MoTe₂, a 2D transition‐metal dichalcogenide (TMD), has shown outstanding properties, aiming at future electronic devices. Such TMD structures without surface dangling bonds make the 2D α‐MoTe₂ a more favorable candidate than conventional 3D Si on the scale of a few nanometers. The bandgap of thin α‐MoTe₂ appears close to that of Si and is quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control the charge‐carrier polarity of MoTe₂, functional devices such as p–n junction or complementary metal–oxide–semiconductor (CMOS) inverters have not been reported. Here, we demonstrate a 2D CMOS inverter and p–n junction diode in a single α‐MoTe₂ nanosheet by a straightforward selective doping technique. In a single α‐MoTe₂ flake, an initially p‐doped channel is selectively converted to an n‐doped region with high electron mobility of 18 cm² V^?1 s^?1 by atomic‐layer‐deposition‐induced H‐doping. The ultrathin CMOS inverter exhibits a high DC voltage gain of 29, an AC gain of 18 at 1 kHz, and a low static power consumption of a few nanowatts. The results show a great potential of α‐MoTe₂ for future electronic devices based on 2D semiconducting materials.     

Gate‐Dependent Tunnelling Current Modulation of Graphene/hBN Vertical Heterostructures

Combining with layered thin crystalline films, graphene has expanded its application scope beyond the regime where a gapless semimetal cannot serve. Here, we report the modulation of tunneling characteristics in graphene/hexagonal boron nitride (hBN) vertical heterostructure at different interlayer hBN thickness. These results signify an upshift in threshold voltages with hBN layer thickness. Furthermore, the gate‐dependent tunneling characteristics of the device has been demonstrated. The back‐gate voltages are used to adjust the fermi level of bottom graphene layer, which in turns tune the threshold voltages and tunneling current through ultrathin hBN layer. Our findings offer an effective tool to modulate the tunneling characteristics of vertical transistors for their potential applications in high frequency logic and tunnel devices.

     

High‐Performance,Solution‐Processed,and Insulating‐Layer‐Free Light‐Emitting Diodes Based on Colloidal Quantum Dots

Quantum‐dot light‐emitting diodes (QLEDs) may combine superior properties of colloidal quantum dots (QDs) and advantages of solution‐based fabrication techniques to realize high‐performance, large‐area, and low‐cost electroluminescence devices. In the state‐of‐the‐art red QLED, an ultrathin insulating layer inserted between the QD layer and the oxide electron‐transporting layer (ETL) is crucial for both optimizing charge balance and preserving the QDs' emissive properties. However, this key insulating layer demands very accurate and precise control over thicknesses at sub‐10 nm level, causing substantial difficulties for industrial production. Here, it is reported that interfacial exciton quenching and charge balance can be independently controlled and optimized, leading to devices with efficiency and lifetime comparable to those of state‐of‐the‐art devices. Suppressing exciton quenching at the ETL–QD interface, which is identified as being obligatory for high‐performance devices, is achieved by adopting Zn_0.9Mg_0.1O nanocrystals, instead of ZnO nanocrystals, as ETLs. Optimizing charge balance is readily addressed by other device engineering approaches, such as controlling the oxide ETL/cathode interface and adjusting the thickness of the oxide ETL. These findings are extended to fabrication of high‐efficiency green QLEDs without ultrathin insulating layers. The work may rationalize the design and fabrication of high‐performance QLEDs without ultrathin insulating layers, representing a step forward to large‐scale production and commercialization.     

Construction of Large‐Area Ultrathin Conductive Metal–Organic Framework Films through Vapor‐Induced Conversion

On account of unique characteristics, the integration of metal–organic frameworks as active materials in electronic devices attracts more and more attention. The film thickness, uniformity, area, and roughness are all fatal factors limiting the development of electrical and optoelectronic applications. However, research focused on ultrathin free‐standing films is in its infancy. Herein, a new method, vapor‐induced method, is designed to construct centimeter‐sized Ni₃(HITP)₂ films with well‐controlled thickness (7, 40, and 92 nm) and conductivity (0.85, 2.23, and 22.83 S m^?1). Further, traditional transfer methods are tactfully applied to metal–organic graphene analogue (MOGA) films. In order to maintain the integrity of films, substrates are raised up from bottom of water to hold up films. The stripping method greatly improves the surface roughness R_q (root mean square roughness) without loss of conductivity and endows the film with excellent elasticity and flexibility. After 1000 buckling cycles, the conductance shows no obvious decrease. Therefore, the work may open up a new avenue for flexible electronic and magnetic devices based on MOGA.     

Reverse‐Offset Printed Ultrathin Ag Mesh for Robust Conformal Transparent Electrodes for High‐Performance Organic Photovoltaics

Mechanically durable transparent electrodes are needed in flexible optoelectronic devices to realize their long‐term stable functioning, for applications in various fields such as energy, healthcare, and soft robotics. Several promising transparent electrodes based on nanomaterials have been previously reported to replace the conventional and fragile indium‐tin oxide (ITO); however, obtaining feasible printed transparent electrodes for ultraflexible devices with a multistack structure is still a great challenge. Here, a printed ultrathin (uniform thickness of 100 nm) Ag mesh transparent electrode is demonstrated, simultaneously achieving high conductance, high transparency, and good mechanical properties. It shows a 17 Ω sq^?1 sheet resistance (R_sh) with 93.2% transmittance, which surpasses the performance of sputtered ITO electrodes and other ultrathin Ag mesh transparent electrodes. The conductance is stable after 500 cycles of 100% stretch/release deformation, with an insignificant increase (10.6%) in R_sh by adopting a buckling structure. Furthermore, organic photovoltaics (OPVs) using our Ag mesh transparent electrodes achieve a power conversion efficiency of 8.3%, which is comparable to the performance of ITO‐based OPVs.     

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large‐area electronics, particularly thin‐film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High‐permittivity (κ) oxide dielectrics are a key component for achieving low‐voltage and high‐performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO₂ with high‐κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low‐cost devices, tremendous efforts have been devoted to vacuum‐free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high‐κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high‐κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO₂ is outlined. Recent achievements of solution‐processed high‐κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water‐induced, self‐combustion reaction, and energy‐assisted post treatments, for the realization of flexible electronics and circuits are discussed.     

Epitaxial Lift‐Off of Centimeter‐Scaled Spinel Ferrite Oxide Thin Films for Flexible Electronics

Mechanical flexibility of electronic devices has attracted much attention from research due to the great demand in practical applications and rich commercial value. Integration of functional oxide materials in flexible polymer materials has proven an effective way to achieve flexibility of functional electronic devices. However, the chemical and mechanical incompatibilities at the interfaces of dissimilar materials make it still a big challenge to synthesize high‐quality single‐crystalline oxide thin film directly on flexible polymer substrates. This study reports an improved method that is employed to successfully transfer a centimeter‐scaled single‐crystalline LiFe₅O₈ thin film on polyimide substrate. Structural characterizations show that the transferred films have essentially no difference in comparison with the as‐grown films with respect to the microstructure. In particular, the transferred LiFe₅O₈ films exhibit excellent magnetic properties under various mechanical bending statuses and show excellent fatigue properties during the bending cycle tests. These results demonstrate that the improved transfer method provides an effective way to compose single‐crystalline functional oxide thin films onto flexible substrates for applications in flexible and wearable electronics.     

Growth, structure and electronic properties of ultrathin cerium oxide films grown on Pt(111)

Ultrathin cerium oxide films have been prepared by oxidizing Ce-Pt/Pt(111) surface alloys with 65 L O₂ at 900 K. According to low electron energy diffraction data, phonon spectra recorded by high resolution electron energy loss spectroscopy and scanning tunneling microscopy measurements the films are of fluorite-type CeO₂(111) structure. They grow three dimensionally as islands, which are flat and up to several hundred square nanometers large. The film thickness varies between one and five layers. The band gap of the oxide films has been probed by scanning tunneling spectroscopy and turned out to be significantly smaller than for bulk CeO_2.     

Camphor‐Enabled Transfer and Mechanical Testing of Centimeter‐Scale Ultrathin Films

Camphor is used to transfer centimeter‐scale ultrathin films onto custom‐designed substrates for mechanical (tensile) testing. Compared to traditional transfer methods using dissolving/peeling to remove the support‐layers, camphor is sublimed away in air at low temperature, thereby avoiding additional stress on the as‐transferred films. Large‐area ultrathin films can be transferred onto hollow substrates without damage by this method. Tensile measurements are made on centimeter‐scale 300 nm‐thick graphene oxide film specimens, much thinner than the ≈2 μm minimum thickness of macroscale graphene‐oxide films previously reported. Tensile tests were also done on two different types of large‐area samples of adlayer free CVD‐grown single‐layer graphene supported by a ≈100 nm thick polycarbonate film; graphene stiffens this sample significantly, thus the intrinsic mechanical response of the graphene can be extracted. This is the first tensile measurement of centimeter‐scale monolayer graphene films. The Young's modulus of polycrystalline graphene ranges from 637 to 793 GPa, while for near single‐crystal graphene, it ranges from 728 to 908 GPa (folds parallel to the tensile loading direction) and from 683 to 775 GPa (folds orthogonal to the tensile loading direction), demonstrating the mechanical performance of large‐area graphene in a size scale relevant to many applications.     

Graphene Acoustic Phonon‐Mediated Pseudo‐Landau Levels Tailoring Probed by Scanning Tunneling Spectroscopy

Graphene has attracted great interests in various areas including optoelectronics, spintronics, and nanomechanics due to its unique electronic structure, a linear dispersion with a zero bandgap around the Dirac point. Shifts of Dirac cones in graphene creates pseudo‐magnetic field, which generates an energy gap and brings a zero‐magnetic‐field analogue of the quantum Hall effect. Recent studies have demonstrated that graphene pseudo‐magnetic effects can be generated by vacancy defects, atom adsorption, zigzag or armchair edges, and external strain. Here, a larger than 100 T pseudo‐magnetic field is reported that generated on the step area of graphene; and with the ultrahigh vacuum scanning tunneling microscopy, the observed Landau levels can be effectively tailored by graphene phonons. The zero pseudo‐Landau level is suppressed due to the phonon‐mediated inelastic tunneling, and this is observed by the scanning tunneling spectroscopy spectrum and confirmed by the Vienna ab initio simulation package calculation, where graphene phonons modulate the flow of tunneling electrons and further mediate pseudo‐Landau levels. These observations demonstrate a viable approach for the control of pseudo‐Landau levels, which tailors the electronic structure of graphene, and further ignites applications in graphene valley electronics.     

Growing Oxide Nanowires and Nanowire Networks by Solid State Contact Diffusion into Solution‐Processed Thin Films

New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparticle seed deposition or postsynthesis nanowire casting will bridge the gap between bottom‐up formation and top‐down processing for many electronic, photonic, energy storage, and conversion technologies. Whether etched top‐down, or grown from catalyst nanoparticles bottom‐up, nanowire growth relies on heterogeneous material seeds. Converting surface oxide films, ubiquitous in the microelectronics industry, to nanowires and nanowire networks by the incorporation of extra species through interdiffusion can provide an alternative deposition method. It is shown that solution‐processed thin films of oxides can be converted and recrystallized into nanowires and networks of nanowires by solid‐state interdiffusion of ionic species from a mechanically contacted donor substrate. NaVO₃ nanowire networks on smooth Si/SiO₂ and granular fluorine‐doped tin oxide surfaces can be formed by low‐temperature annealing of a Na diffusion species‐containing donor glass to a solution‐processed V₂O₅ thin film, where recrystallization drives nanowire growth according to the crystal habit of the new oxide phase. This technique illustrates a new method for the direct formation of complex metal oxide nanowires on technologically relevant substrates, from smooth semiconductors, to transparent conducting materials and interdigitated device structures.     

A Living‐Dead Magnetic Layer at the Surface of Ferrimagnetic DyTiO3 Thin Films

When ferromagnetic films become ultrathin, key properties such as the Curie temperature and the saturation magnetization are usually depressed. This effect is thoroughly investigated in magnetic oxides such as half‐metallic manganites, but much less in ferrimagnetic insulating perovskites such as rare‐earth titanates RTiO₃, despite their appeal to design correlated 2D electron gases. Here, the magnetic properties of epitaxial DyTiO₃ thin films are reported. While films thicker than about 50 nm show a bulk‐like response, at low thickness a surprising increase of the saturation magnetization is observed. This behavior is described using a classical model of a “dead layer” but assuming that this layer is actually “living,” that is, it responds to the magnetic field with a strong paramagnetic susceptibility. Through depth‐dependent X‐ray absorption and photoemission spectroscopy, it is shown that the “living‐dead layer” corresponds to surface regions where magnetic (S = 1/2) Ti³⁺ ions are replaced by nonmagnetic Ti⁴⁺ ions. Hysteresis cycles at the Dy M₅ and Ti L₃ edges indicate that the surface Ti⁴⁺ ions decouple the Dy³⁺ ions, thus unleashing their strong paramagnetic response. Finally, it is shown how capping the DyTiO₃ film can help increase the Ti³⁺ content near the surface and thus recover a better ferrimagnetic behavior.     

Stretchable Organometal‐Halide‐Perovskite Quantum‐Dot Light‐Emitting Diodes

Stretchable light‐emitting diodes (LEDs) and electroluminescent capacitors have been reported to potentially bring new opportunities to wearable electronics; however, these devices lack in efficiency and/or stretchability. Here, a stretchable organometal‐halide‐perovskite quantum‐dot LED with both high efficiency and mechanical compliancy is demonstrated. The hybrid device employs an ultrathin (<3 µm) LED structure conformed on a surface‐wrinkled elastomer substrate. Its luminescent efficiency is up to 9.2 cd A^?1, which is 70% higher than a control diode fabricated on the rigid indium tin oxide/glass substrate. Mechanical deformations up to 50% tensile strain do not induce significant loss of the electroluminescent property. The device can survive 1000 stretch–release cycles of 20% tensile strain with small fluctuations in electroluminescent performance.     

Threshold Voltage Control of Multilayered MoS2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates

In recent past, for next‐generation device opportunities such as sub‐10 nm channel field‐effect transistors (FETs), tunneling FETs, and high‐end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS₂) among transition metal dichalcogenides has been actively performed. However, nonavailability on a matured threshold voltage control scheme, like a substitutional doping in Si technology, has been plagued for the prosperity of 2D materials in electronics. Herein, an adjustment scheme for threshold voltage of MoS₂ FETs by using self‐assembled monolayer treatment via octadecyltrichlorosilane is proposed and demonstrated to show MoS₂ FETs in an enhancement mode with preservation of electrical parameters such as field‐effect mobility, subthreshold swing, and current on–off ratio. Furthermore, the mechanisms for threshold voltage adjustment are systematically studied by using atomic force microscopy, Raman, temperature‐dependent electrical characterization, etc. For validation of effects of threshold voltage engineering on MoS₂ FETs, full swing inverters, comprising enhancement mode drivers and depletion mode loads are perfectly demonstrated with a maximum gain of 18.2 and a noise margin of ≈45% of 1/2 V_DD. More impressively, quantum dot light‐emitting diodes, driven by enhancement mode MoS₂ FETs, stably demonstrate 120 cd m^?2 at the gate‐to‐source voltage of 5 V, exhibiting promising opportunities for future display application.     

Large‐Area Atomic Layers of the Charge‐Density‐Wave Conductor TiSe2

Layered transition metal (Ti, Ta, Nb, etc.) dichalcogenides are important prototypes for the study of the collective charge density wave (CDW). Reducing the system dimensionality is expected to lead to novel properties, as exemplified by the discovery of enhanced CDW order in ultrathin TiSe₂. However, the syntheses of monolayer and large‐area 2D CDW conductors can currently only be achieved by molecular beam epitaxy under ultrahigh vacuum. This study reports the growth of monolayer crystals and up to 5 × 10⁵ µm² large films of the typical 2D CDW conductor—TiSe₂—by ambient‐pressure chemical vapor deposition. Atomic resolution scanning transmission electron microscopy indicates the as‐grown samples are highly crystalline 1T‐phase TiSe₂. Variable‐temperature Raman spectroscopy shows a CDW phase transition temperature of 212.5 K in few layer TiSe₂, indicative of high crystal quality. This work not only allows the exploration of many‐body state of TiSe₂ in 2D limit but also offers the possibility of utilizing large‐area TiSe₂ in ultrathin electronic devices.     

A Dopant Replacement‐Driven Molten Salt Method toward the Synthesis of Sub‐5‐nm‐Sized Ultrathin Nanowires

The high‐temperature molten‐salt method is an important inorganic synthetic route to a wide variety of morphological phenotypes. However, its utility is limited by the fact that it is typically incapable of producing ultrathin (<5 nm diameter) nanowires, which have a crucial role in novel nanotechnology applications. Herein, a rapid molten salt‐based synthesis of sub‐5‐nm‐sized nanowires of hexagonal tungsten oxide (h‐WO₃) that is critically dependent on a substantial proportion of molybdenum (Mo) dopant is described. This dopant‐driven morphological transition in tungsten oxide (WO₃) may be attributable to the collapse of layered structure, followed by nanocluster aggregation, coalescence, and recrystallization to form ultrathin nanowires. Interestingly, due to the structural properties of h‐WO₃, the thus‐formed ultrathin nanowires are demonstrated to be excellent photocatalysts for the production of ammonia (NH₃) from nitrogen (N₂) and water. The ultrathin nanowires exhibit a high photocatalytic NH₃‐production activity with a rate of 370 µmol g^?1 h^?1 and an apparent quantum efficiency of 0.84% at 420 nm, which is more than twice that obtained from the best‐performing Mo‐doped W₁₈O₄₉ nanowire catalysts. It is envisaged that the dopant replacement‐driven synthetic protocol will allow for rapid access to a series of ultrathin nanostructures with intriguing properties and increase potential applications.     

Surfactant‐Free Sub‐2 nm Ultrathin Triangular Gold Nanoframes

Ultrathin triangular gold nanoframes are synthesized in high yield through selective gold deposition on the edges of triangular silver nanoprisms and subsequent silver etching with mild wet etchants. These ultrathin gold nanoframes are surfactant‐free with tailorable ridge thickness from 1.8 to 6 nm and exhibit adjustable and distinct surface plasmon resonance bands in the visible and near‐IR region. In comparison, etching of the nanoprism template by galvanic replacement can only create frame structures with much thicker ridges, which have much lower catalytic activity for 4‐nitrophenol reduction than the ultrathin gold nanoframes.     

A Synaptic Transistor based on Quasi‐2D Molybdenum Oxide

Biological synapses store and process information simultaneously by tuning the connection between two neighboring neurons. Such functionality inspires the task of hardware implementation of neuromorphic computing systems. Ionic/electronic hybrid three‐terminal memristive devices, in which the channel conductance can be modulated according to the history of applied voltage and current, provide a more promising way of emulating synapses by a substantial reduction in complexity and energy consumption. 2D van der Waals materials with single or few layers of crystal unit cells have been a widespread innovation in three‐terminal electronic devices. However, less attention has been paid to 2D transition‐metal oxides, which have good stability and technique compatibility. Here, nanoscale three‐terminal memristive transistors based on quasi‐2D α‐phase molybdenum oxide (α‐MoO₃) to emulate biological synapses are presented. The essential synaptic behaviors, such as excitatory postsynaptic current, depression and potentiation of synaptic weight, and paired‐pulse facilitation, as well as the transition of short‐term plasticity to long‐term potentiation, are demonstrated in the three‐terminal devices. These results provide an insight into the potential application of 2D transition‐metal oxides for synaptic devices with high scaling ability, low energy consumption, and high processing efficiency.     

High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free,Low‐Temperature Direct Growth

The transfer‐free direct growth of high‐performance materials and devices can enable transformative new technologies. Here, room‐temperature field‐effect hole mobilities as high as 707 cm² V^?1 s^?1 are reported, achieved using transfer‐free, low‐temperature (≤120 °C) direct growth of helical tellurium (Te) nanostructure devices on SiO₂/Si. The Te nanostructures exhibit significantly higher device performance than other low‐temperature grown semiconductors, and it is demonstrated that through careful control of the growth process, high‐performance Te can be grown on other technologically relevant substrates including flexible plastics like polyethylene terephthalate and graphene in addition to amorphous oxides like SiO₂/Si and HfO₂. The morphology of the Te films can be tailored by the growth temperature, and different carrier scattering mechanisms are identified for films with different morphologies. The transfer‐free direct growth of high‐mobility Te devices can enable major technological breakthroughs, as the low‐temperature growth and fabrication is compatible with the severe thermal budget constraints of emerging applications. For example, vertical integration of novel devices atop a silicon complementary metal oxide semiconductor platform (thermal budget <450 °C) has been theoretically shown to provide a 10× systems level performance improvement, while flexible and wearable electronics (thermal budget <200 °C) can revolutionize defense and medical applications.     

Controlling the Magnetic Properties of LaMnO3/SrTiO3 Heterostructures by Stoichiometry and Electronic Reconstruction: Atomic‐Scale Evidence

Interface‐driven magnetic effects and phenomena associated with spin–orbit coupling and intrinsic symmetry breaking are of importance for fundamental physics and device applications. How interfaces affect the interplay between charge, spin, orbital, and lattice degrees of freedom is the key to boosting device performance. In LaMnO₃/SrTiO₃ (LMO/STO) polar–nonpolar heterostructures, electronic reconstruction leads to an antiferromagnetic to ferromagnetic transition, making them viable for spin filter applications. The interfacial electronic structure plays a critical role in the understanding of the microscopic origins of the observed magnetic phase transition, from antiferromagnetic at 5 unit cells (ucs) of LMO or below to ferromagnetic at 6 ucs or above, yet such a study is missing. Here, an atomic scale understanding of LMO/STO ambipolar ferromagnetism is offered by quantifying the interface charge distribution and performing first‐principles density functional theory (DFT) calculations across this abrupt magnetic transition. It is found that the electronic reconstruction is confined within the first 3 ucs of LMO from the interface, and more importantly, it is robust against oxygen nonstoichiometry. When restoring stoichiometry, an enhanced ferromagnetic insulating state in LMO films with a thickness as thin as 2 nm (5 uc) is achieved, making LMO readily applicable as barriers in spin filters.