稀土改性剂对玻璃纤维-SiO2/聚四氟乙烯复合材料性能的影响

采用不同的稀土改性剂（La、Ce、Pr、Nd和Sm）对SiO₂和玻璃纤维（GF）进行改性处理,SiO₂含量为55wt%,GF含量为2wt%。填料改性处理后与聚四氟乙烯（PTFE）分散液在高速分散机中混合,然后通过热压烧结法制得GF-SiO₂/PTFE复合材料。考察了不同的稀土改性剂对GF-SiO₂/PTFE复合材料吸水性、介电性能、热膨胀系数和力学性能的影响。采用FTIR手段对稀土La改性剂,未改性的填料和改性后的填料结构进行了测试。并用SEM和EDS对复合材料的断口形貌及表面处理前后填料的形貌进行观察和能谱分析。结果表明：由于稀土La的电子层结构比其他轻稀土更稳定,对阴离子的吸引作用比其他轻稀土强,稀土La改性剂比其他的稀土改性剂能更好地促进填料GF与PTFE界面粘合,改善GF-SiO₂/PTFE复合材料性能。GF-SiO₂/PTFE复合材料的介电性能受到La含量的影响,当La含量为0.3wt%时介电性能最佳。     

核壳结构SiCNWs@SiO2/PVDF复合材料的制备与介电储能特性

为了加速新能源电子器件向微型化和集成化的方向发展，提高电子器件内部介电复合材料的性能至为重要，介电复合材料的介电性能和储能性能直接影响电子器件的质量，如何提高介电复合材料的介电性能和储能性能等引起了研究者们的广泛关注。以聚偏氟乙烯(PVDF)为基体，碳化硅纳米线(SiCNWs)和核壳结构碳化硅纳米线@二氧化硅(SiCNWs@SiO₂)为填料，通过溶液共混相转换法及热压工艺制备出一系列的SiCNWs/PVDF二元复合材料和SiCNWs@SiO₂/PVDF复合材料。探究介电纳米填料的表面修饰对PVDF基复合材料的微观结构、宏观介电性能和储能性能等的影响。实验结果表明，硅烷偶联剂KH550成功改性SiCNWs；通过一步法热氧化工艺成功制备出具有典型核壳结构的SiCNWs@SiO₂纳米线，SiO₂壳层的厚度随着SiCNWs热氧化时间的延长而增大，当SiCNWs热氧化时间为10 h,SiO₂壳层的厚度为6.5 nm；采用相转换法和热压处理成功制备一系列的SiCNWs/PVDF二元复合材料...     

双酚A型二氰酸酯树脂浸渍GC／PTFE透波复合材料的性能

采用双酚A型二氰酸酯(BADCy)树脂热融法对玻璃布(GC)/聚四氟乙烯(PTFE)复合材料进行浸渍以改善GC/PTFE透波复合材料的力学性能,研究了BADCy树脂的浸渍工艺、GC/PTFE复合材料孔隙率、BADCy浸入量等对复合材料介电性能及力学性能的影响规律,并用扫描电子显微镜对断口形貌进行了分析。结果表明,当GC/PTFE复合材料的孔隙率为25%时、采用85℃抽真空(0.01 MPa)的浸渍工艺能获得BADCy含量为14.4%(质量分数)的GC/PTFE复合材料,该复合材料具有较优的力学性能和良好的介电性能。湿/热研究表明,经BADCy浸渍后的GC/PTFE复合材料具有较好的耐水煮性能,可满足结构透波材料的使用要求。     

核-壳结构界面对纳米Ag掺杂BaTiO3@PDA/P(VDF-HFP)复合膜介电和储能性能影响

为改善聚偏氟乙烯（PVDF）基复合材料界面相容性,提高其电性能,利用聚多巴胺（PDA）成功包覆了纳米钛酸钡（BaTiO₃）,并引入纳米Ag离子制备出具有核-壳结构的Ag镶嵌BaTiO₃@PDA-Ag颗粒。以介电聚合物聚偏氟乙烯-六氟丙烯（P（VDF-HFP））为基体,采用溶液流延法制备了BaTiO₃@PDA-Ag/P（VDF-HFP）复合材料厚膜。利用FTIR和XPS验证了BaTiO₃@PDA-Ag/P（VDF-HFP）复合材料结构和形貌,并用宽频介电频谱仪和铁电测试仪分别比较了PDA包覆前后的不同BaTiO₃含量的BaTiO₃@PDA-Ag/P（VDF-HFP）复合膜在低电场下的介电性能和高电场下的电极化性能。结果表明,BaTiO₃@PDA-Ag质量分数为20wt%的BaTiO₃@PDA-Ag/P（VDF-HFP）复合膜在10 Hz下介电常数（ε_r）达到了25,介电损耗（tanδ）仅为0.1,在175 M·Vm-1电场下电极化强度（D_m）为6.2 μC·cm-2,200 M·Vm-1时储能密度（U_e）达到了6.9 J·cm-3,高于其它界面未处理复合膜。以上结果可为此类介电复合材料界面结构处理和电性能研究提供参考。      

基于正交设计的纳米蛇纹石-纳米氧化镧/聚四氟乙烯复合材料在沙尘环境下的摩擦学性能

以聚四氟乙烯(PTFE)为基体,采用正交实验法研究了纳米蛇纹石(nano Serpentine)、纳米氧化镧 (nano La₂O₃)和环境三种因素对nano Serpentine-nano La₂O₃/PTFE复合材料摩擦学性能的影响。采用自制沙尘模拟装置改进现有的 MMU-5G摩擦磨损试验机对nano Serpentine-nano La₂O₃/PTFE复合材料进行摩擦学实验。通过SEM观察试样磨损表面和转移膜形貌,分析nano Serpentine-nano La₂O₃/PTFE复合材料磨损机制。结果表明:环境因素对nano Serpentine-nano La₂O₃/PTFE复合材料的摩擦系数影响最大,干摩擦摩擦系数比沙尘环境下摩擦系数低;nano Serpentine含量对nano Serpentine-nano La₂O₃/PTFE复合材料的磨损率影响最大,当nano Serpentine质量分数为9wt%时,nano Serpentine-nano La₂O₃/PTFE复合材料的总体磨损率最低。nano Serpentine-nano La₂O₃/PTFE复合材料的干摩擦的磨损机制主要为黏着磨损,沙尘环境的磨损机制主要为磨粒磨损。      

Ba(Zr0.15Ti0.85)O3厚膜的介电与铁电性能研究

本研究采用流延法制备Ba(Zr_0.15Ti_0.85)O₃(BZT)厚膜样品。采用扫描电子显微镜分析样品形貌; 采用LCR测试仪和Sawyer-Tower电路法测量样品的介电与铁电性能。结果表明, BZT厚膜具有明显的介电弛豫特征, 击穿电场强度可达60 kV/cm以上, 饱和极化强度可达58.1 μC/ cm², 剩余极化强度(Pr)为20.9 μC/ cm²。     

Ti3C2Tx MXene/聚乙烯醇复合材料的介电性能

以二维过渡金属碳化物Ti₃C₂T_x MXene作为填料,非铁电、可生物降解的高分子物质聚乙烯醇(PVA)作为基体,通过溶液涂膜法制备了具有高介电常数的Ti₃C₂T_x MXene/PVA柔性复合材料。研究了Ti₃C₂T_x MXene充填量对复合材料介电性能的影响。Ti₃C₂T_x MXene/PVA复合材料的介电性能变化遵循逾渗规律,随着Ti₃C₂T_x MXene充填量的增加,Ti₃C₂T_x MXene/PVA复合材料的介电常数呈先增加后减小的变化规律,Ti₃C₂T_x MXene充填量为20wt%的Ti₃C₂T_x MXene/PVA复合材料介电常数在20 Hz时高达577.3,比纯PVA的介电常数(10.5)提升了5 398%。但是,当Ti₃C₂T_x MXene充填量超过20wt%后,Ti₃C₂T_x MXene/PVA复合材料的介电常数急剧下降,介电损耗快速上升,表现出明显的逾渗行为。      

纳米SiO2分散性对SiO2/LDPE纳米复合材料直流介电性能的影响

SiO₂/低密度聚乙烯(LDPE)复合材料的介电性能与纳米SiO₂在LDPE基体中的分散性密切相关。为研究室温下拉伸处理对纳米SiO₂颗粒在LDPE基体中分散性的作用机制,本文选取7 nm粒径的疏水型纳米SiO₂与LDPE熔融共混制备SiO₂/LDPE纳米复合材料。将制备好的纳米复合材料经过三次拉伸处理,利用SEM、DSC表征纳米粒子的分散性及复合材料的结晶度,利用热刺激电流法(TSC)测试分析复合材料的陷阱能级和陷阱密度。通过对纳米复合材料的空间电荷,电导电流,直流击穿强度进行实验测试,研究了拉伸对纳米粒子分散性的影响及其所导致的直流介电性能的改变。结果表明室温下拉伸有助于纳米粒子的分散,使纳米SiO₂粒子的团聚尺寸从200 nm左右缩减到100 nm左右;但拉伸会破坏LDPE的结晶结构,劣化其性能;通过掺杂纳米SiO₂引入深陷阱能级可以改善LDPE的直流介电性能。经过拉伸的SiO₂/LDPE的空间电荷积累得到...     

低损耗ZrTi2O6填充PTFE复合基板性能

采用热压成型工艺,制备了一种低损耗ZrTi₂O₆陶瓷填充聚四氟乙烯（PTFE）的新型微波复合基板材料。采用介质谐振器法研究了ZrTi₂O₆/PTFE复合材料的微波介电性能（8~12 GHz）。结果表明,ZrTi₂O₆/PTFE复合材料的相对介电常数（ε _r）和介电损耗（tanδ）随着ZrTi₂O₆陶瓷体积分数（0~46%）的增加而增大,介电常数实验值与Lichtenecker模型预测值最吻合。ZrTi₂O₆/PTFE复合材料的热膨胀系数和介电常数温度系数随着ZrTi₂O₆陶瓷体积分数的增加而减小。46%的ZrTi₂O₆为较优填料比例,ZrTi₂O₆/PTFE的相对介电常数为7.42,介电损耗为0.0022（10 GHz）。     

片状纳米Al2O3/环氧树脂复合材料的制备及性能

采用水热法制备片状纳米Al₂O₃,经过偶联剂改性后与环氧树脂复合,通过溶液混合法制备了不同填充量的片状纳米Al₂O₃/环氧树脂复合材料,研究了片状纳米Al₂O₃用量对片状纳米Al₂O₃/环氧树脂复合材料介电性能和热性能的影响,利用SEM对复合材料的断口形貌进行了表征。结果表明: 片状纳米Al₂O₃在环氧树脂基体中分散良好;随着片状纳米Al₂O₃填充量的增加,复合材料的起始热分解温度升高、介电强度增大,当片状纳米Al₂O₃的填充量为7wt%时,复合材料的介电强度为 29.58 kV/mm,比纯环氧树脂的介电强度提高了30%;复合材料的介电常数(3.8~4.5)和介电损耗(0.015)比纯环氧树脂稍有增大,但仍维持在较好的介电性能范围内。     

Effect of aluminium content on the anodic behaviour of copper-aluminium alloys in 3.5 wt% NaCl solution

Anodic behaviour of heterogeneous Cu-Al alloys in 3.5 wt% NaCl solution has been investigated as a function of aluminium content by potentiodynamic polarization, cyclic voltammetry and potentiostatic current transient experiments and compared to pure Cu and homogeneous Cu-Al alloys. The specimens were subjected to various anodic potentials and subsequent analyses by scanning electron microscopy (SEM) supplemented with energy dispersion spectroscopy (EDS). The pure Cu and single -phase Cu-Al alloys showed that a relatively thick protective CuCl film forms at active-passive transition potentials and transforms into CuO or Cu(OH)₂ at the passivation potential, resulting in high limiting current densities. However, the Cu-10 wt% Al alloy is passivated to Al(OH)₃, impeding the transformation of the thick CuCl layer which contains AlCl or Al(OH)₂Cl salt into CuO or Cu(OH)₂. At high applied anodic potential, the Cu₂(OH)₃Cl phase forms on the deteriorated passive film Al(OH)₃.     

PTFE/Al/MoO3复合材料的力学和反应性能

使用模压烧结法制备不同PTFE体积分数的PTFE/Al/MoO3复合材料,借助扫描电子显微镜(SEM)和X射线衍射仪(XRD)对材料进行表征,并研究该复合材料的准静态压缩性能和动态冲击性能。结果表明:PTFE/Al/MoO3复合材料的强度随着PTFE的增加先增加后降低,当PTFE体积分数为70%时达到最大的80MPa,且该试样能够在准静态压缩条件下发火,发出巨大的爆炸声和明亮的火光,而其他试件在同等条件下未见发火现象。动态冲击条件下,PTFE/Al/MoO3复合材料均能发生爆炸反应,但随着PTFE的增加,剧烈程度逐渐降低,反应产物为AlF3,Al2O3,Mo,C,表明Al与PTFE和MoO3都发生了氧化还原反应。在材料强度和组分的双重影响下,PTFE/Al/MoO3复合材料发火所需能量随着PTFE的增加,呈现先降后升的趋势。     

Interface stress induced hardness enhancement and superelasticity in polytetrafluoroethylene/metal multilayer thin films

Polytetrafluoroethylene (PTFE)/Al, PTFE/Cu, and PTFE/Ti multilayer thin films have been deposited in order to investigate effects of interface energy on mechanical properties. PTFE, which has a low surface energy of 19.2 mJ/m², was used to introduce a large interface energy into multilayer thin films. PTFE thin film was deposited by rf magnetron sputtering using a PTFE sheet target. Al, Cu, and Ti were deposited by dc magnetron sputtering. The multilayer thin films were fabricated sequentially without breaking vacuum. Substrate used was aluminosilicate glass. The modulation period was changed from 6.7 to 200 nm. The total thickness was about 200 nm for all samples. The internal stress of metal layers changed from tensile to compressive and increased with decreasing modulation period for all of PTFE/Al, PTFE/Cu, and PTFE/Ti. Both hardness enhancement and superelasticity were observed in the results of nanoindentation measurements. The energy dissipated during nanoindentation process (one load and unload cycle) decreased with decreasing modulation period. The minimum value of the ratio of dissipated/loaded energy was < 40%, which is smaller than the values obtained for monolithic PTFE or metal films (about 73% for PTFE and 87% for Al, 72% for Cu, and 71% for Ti, respectively). This meant that the PTFE/metal nano-multilayer thin films became more elastic with decreasing modulation period. The tendency of change in the mechanical properties strongly correlated to internal stress. Mechanisms involved in anomalous behaviors in film hardness and elasticity were discussed based on the relationship to interface energy, interface stress, and internal stress, induced by multilayering of the films. It is concluded that a large compressive stress introduced in the thin films increased the energy needed to deform elastically or plastically the thin film during indentation, resulting in the increase in hardness and elasticity. The nanoindentation analysis of the multilayer thin films emphasized that in PTFE/metal multilayer thin films mechanical properties of the films depend on interface stress induced by the accumulated interface energy, being independent of bulk materials properties composing thin films, resulting in increase in hardness and elasticity.     

A3钢镀锌层钼酸盐钝化膜的组成和性能

使用加速腐蚀试验和X射线光电子能谱（XPS）等手段，研究了A3钢镀锌层钼酸盐钝化膜的组成和性能．结果表明，钼酸盐钝化膜膜层厚度大于35nm，钝化膜外层钼元素以Mo^3＋、Mo^6＋形式存在，主要组成为：MoO3，Mo（OH）3，Zn（OH）2，ZnO，ZnM004；钝化膜内层钼元素以Mo^3＋形式存在，主要由Mo2O3，Mo（OH）3，ZnO，ZnMo2O4组成．钝化膜表面层中的MoO4^2-具有抗氯离子等侵蚀性阴离子的破坏作用，使钝化膜具有阳离子选择性，提高镀锌钝化膜的耐蚀性能．     

SiCp/Al复合材料微弧氧化膜的组织结构及性能

采用微弧氧化技术对SiC体积分数分别为17vol%和55vol%的两种SiCp/Al复合材料进行处理。分析了两种材料微弧氧化膜的组织、形貌、相组成,测定了膜层的粗糙度、显微硬度、结合力,考察了膜层的耐磨和耐蚀性。结果表明:SiC的含量对SiCp/Al复合材料微弧氧化膜的表面形貌、粗糙度、相组成、结合力及摩擦磨损性能均有影响。17vol%SiCp/2009Al复合材料的微弧氧化膜较55vol%SiCp/6061Al复合材料更平整,微孔大小更均匀。55vol%SiCp/6061Al复合材料的微弧氧化膜的粗糙度(3.308 μm)比17vol%SiCp/2009Al复合材料(2.140 μm)大,表面熔融物堆积更多。两种材料的微弧氧化膜中均含有Al、Si、O、C、W等元素。55vol%SiCp/6061Al复合材料的微弧氧化膜中Mullite(SiO₂-Al₂O₃)相、α-Al₂O₃相、β-Al₂O₃相较多。17vol%SiCp/2009Al复合材料的微弧氧化膜的结合(38.55 N)较55vol%SiCp/6061Al(11.5 N)复合材料好。55vol%SiCp/6061Al复合材料的微弧氧化膜摩擦系数较大,磨损较严重。微弧氧化处理能有效改善两种SiCp/Al复合材料的耐蚀性。      

Surface characteristics of Ti6Al4V alloy: effect of materials, passivation and autoclaving

The properties of passivated films for Ti6Al4V alloy prepared by various methods (as-polished, brazed at 970 °C for 2 h and brazed at 970 °C for 8 h) were investigated. Four passivations (non-treated, nitric acid passivation, 400 °C-treated in air, and aged in boiling water), with or without autoclaving treatments, were adopted for evaluating the changes of surface properties, including chemical composition, chemical structure, and oxide thickness. From X-ray photoelectron spectroscopic (XPS) analyses, surface elements of copper and nickel in brazed samples were undetected for non-treated, acid-passivated and boiling water-aged specimens, while they were found in the 400 °C-treated specimen. The relative contents of Ti2++Ti3+ to Ti4+ were determined by passivation treatments, but were not related to the experimental materials and autoclaving treatment. Passivation and autoclaving decreased the Ti to Ti4+ ratio by virtue of an increase in oxide thickness. Of the four types of passivation treatment, the 400 °C thermal treatment exhibited the lowest content of suboxides and metallic elements and the thickest oxide by XPS analysis; however, this treatment may cause a desorption of the basic OH group in the hydration layer on the surface of titanium alloy.     

Structural and Dielectric Properties of Dy-doped( Ba, Sr, Ca) TiO3 Thick Films

Preparation and electrecatalytic activities of Pt-TiO2 nanotubes （Bao.57Sr0.33 Cao.10 ）TiO3 powders, prepared by the sol-gel method, were doped MnCO3 as acceptor and Dy2O3 as donor. This powder was mixed with an organic vehicle and BSCT thick films were fabricated by the screen-printing techniques on alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of Dy2O3 amount. As a result of the differential thermal analysis （DTA）, exothermic peak was observed at around 670℃ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with increasing amount of Dy2O3 . The relative dielectric constant and dielectric loss of the BSCT thick film doped Dy2O3 0.1mol% were 4637.4 and 1.6% at lkHz, respectively.     

Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device

We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation.     

Ni-P镀层三价铬超薄钝化膜的组成与耐腐蚀性能

六价铬钝化镀镍层,污染严重,正处于淘汰之中.开发不合六价铬的环境友好型工艺势在必行.采用新开发的三价铬钝化工艺替代传统的六价铬工艺,对化学镀镍层进行钝化,在化学镀镍层表面得到了一层超薄钝化膜.电化学测试表明,钝化处理显著提高了镀镍层的耐腐蚀性能.X射线光电子能谱(XPS)分析表明,钝化膜主要由C,O,Cr,Ni,P,N等元素组成,Ar+溅射方法算出钝化膜厚度约2～5nm.钝化膜中Cr元素主要以Cr2O3和Cr(OH),的形式存在;镀镍层的耐腐蚀性能得到了显著提高.     

Dependence of dielectric properties on the crystallinity of ceramic/polymer composites

Effects of ZnNb(2)O(6) content and crystallinity of polymers on the dielectric properties of ZnNb(2)O(6)/polytetrafluoroethylene (PTFE), polypropylene (PP), and polystyrene (PS) composites were investigated at microwave frequencies. With increasing ZnNb(2)O(6) content, the dielectric constant (K) of the composites increased, whereas the dielectric loss (tanδ) and temperature coefficient of resonant frequency (TCF) decreased. The tanδ of the composites with amorphous PS was lower than those of the composites with semi-crystalline PP and PTFE. For the composites with semi-crystalline PTFE and PP, the tanδ was strongly dependent on the degree of crystallinity of composites. Several types of theoretical models were applied to predict the effective dielectric properties of the composites. Typically, K of 5.73, tan δ of 1.45 x 10(-3), and TCF of 2.66 ppm/°C were obtained for the PP composites with 0.5 volume fraction V(f) of ZnNb(2)O(6).