Structural,dielectric and piezoelectric study of Ca-, Zr-modified $$\hbox {BaTiO}_{3}$$ lead-free ceramics

We prepared a lead-free ceramic (\(\hbox {Ba}_{0.85}\hbox {Ca}_{0.15})(\hbox {Ti}_{1-x}\hbox {Zr}_{x})\hbox {O}_{3}\) (BCTZ) using the conventional mixed oxide technique. The samples were prepared by an ordinary mixing and sintering technique. In this study we investigated how small amounts of \(\hbox {Zr}^{4+}\) can affect the crystal structure and microstructure as well as dielectric and piezoelectric properties of \(\hbox {BaTiO}_{3}\). X-ray diffraction analysis results indicate that no secondary phase is formed in any of the BCTZ powders for \(0 \le x \le 0.1\), suggesting that \(\hbox {Zr}^{4+}\) diffuses into \(\hbox {BaTiO}_{3}\) lattices to form a solid solution. Scanning electron microscopy micrographs revealed that the average grain size gradually increased with \(\hbox {Zr}^{4+}\) content from 9.5 \(\upmu \!\hbox {m}\) for \(x = 0.02\) to 13.5 \(\upmu \!\hbox {m}\) for \(x = 0.1\); Curie temperature decreased due to the small tetragonality caused by \(\hbox {Zr}^{4+}\) addition. Owing to the polymorphic phase transition from orthorhombic to tetragonal phase around room temperature, it was found that the composition \(x = 0.09\) showed improved electrical properties and reached preferred values of \(d_{33} = 148\) pC \(\hbox {N}^{-1}\) and \(K_{\mathrm{p}} = 27\%\).     

Characterization and optical properties of $$\hbox {Pr}_{2}\hbox {O}_{3}$$-doped molybdenum lead-borate glasses

\(\hbox {Pr}^{3+}\) doped molybdenum lead-borate glasses with the chemical composition 75PbO?[25–(x \(+\) y)\(\hbox {B}_{2}\hbox {O}_{3}]\)–\(y\hbox {MoO}_{3}\)–\(x\hbox {Pr}_{2}\hbox {O}_{3}\) (where \(x = 0.5\) and 1.0 mol% and \(y = 0\) and 5 mol%) were prepared by conventional melt-quenching technique. Thermal, optical and structural analyses are carried out using DSC, UV and FTIR spectra. The physical parameters, like glass transition \((T_{\mathrm{g}})\), stability factor \((\Delta T)\), optical energy band gap \((E_{\mathrm{gopt}})\), of these glasses have been determined as a function of dopant concentration. The \({T}_{\mathrm{g}}\) and optical energy gaps of these glasses were found to be in the range of 290–350\({^{\circ }}\hbox {C}\) and 2.45–2.7 eV, respectively. Stability of the glass doped with \(\hbox {Pr}^{3+}\) is found to be moderate (\(\sim \)40). The results are discussed using the structural model of Mo–lead-borate glass.     

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ structure

The temperature-dependent current–voltage (\(I\text {--}V\)) and capacitance–voltage (\(C\text {--}V\)) characteristics of the fabricated Al/p-Si Schottky diodes with the polythiopene–SiO\(_{2}\) nanocomposite (\(\hbox {PTh--SiO}_{2}\)) interlayer were investigated. The ideality factor of \(\hbox {Al}/\hbox {PTh--SiO}_{2}/{p}\text {-Si}\) Schottky diodes has decreased with increasing temperature and the barrier height has increased with increasing temperature. The change in the barrier height and ideality factor values with temperature was attributed to inhomogeneties of the zero-bias barrier height. Richardson plot has exhibited curved behaviour due to temperature dependence of barrier height. The activation energy and effective Richardson constant were calculated as 0.16 eV and \(1.79 \times 10^{-8} \hbox {A\,cm}^{-2} \,\hbox {K}^{-2}\) from linear part of Richardson plots, respectively. The barrier height values determined from capacitance–voltage–temperature (\(C\text {--}V\text {--}T\)) measurements decrease with increasing temperature on the contrary of barrier height values obtained from \(I\text {--}V\text {--}T\) measurements.     

Synthesis,structure and thermoelectric properties of $$\mathrm{La}_{1-x}\mathrm{Na}_{x}\mathrm{CoO}_{3 }$$ perovskite oxides

Monovalent ion doped lanthanum cobaltate \(\hbox {La}_{1-x}\hbox {Na}_{x}\hbox {CoO}_{3 }\) (\(0 \le x \le 0.25\)) compositions were synthesized by the nitrate–citrate gel combustion method. All the heat treatments were limited to below 1123 K, in order to retain the Na stoichiometry. Structural parameters for all the compounds were confirmed by the Rietveld refinement method using powder X-ray diffraction (XRD) data and exhibit the rhombhohedral crystal structure with space group R-3c (No. 167). The scanning electron microscopy study reveals that the particles are spherical in shape and sizes, in the range of 0.2–0.5 \(\upmu \)m. High temperature electrical resistivity, Seebeck coefficient and thermal conductivity measurements were performed on the high density hot pressed pellets in the temperature range of 300–800 K, which exhibit p-type conductivity of pristine and doped compositions. The X-ray photoelectron spectroscopy (XPS) studies confirm the monotonous increase in \(\hbox {Co}^{4+}\) with doping concentration up to \(x = 0.15\), which is correlated with the electrical resistivity and Seebeck coefficient values of the samples. The highest power factor of \(10~\upmu \hbox {W~mK}^{-2 }\) is achieved for 10 at% Na content at 600 K. Thermoelectric figure of merit is estimated to be \({\sim }1 \times 10^{-2}\) at 780 K for 15 at% Na-doped samples.     

Distribution of relaxation times investigation of $$\hbox {Co}^{3+}$$ doping lithium-rich cathode material $$\hbox {Li}[\hbox {Li}_{0.2} \hbox {Ni}_{0.1} \hbox {Mn}_{0.5} \hbox {Co}_{0.2}]\hbox {O}_{2}$$Li[Li0.2Ni0.1Mn0.5Co0.2]O2

The element \(\hbox {Co}^{3+}\) was introduced into lithium-rich material \(0.5\hbox {Li}_{2}\hbox {MnO}_{3} \cdot 0.5 \hbox {LiNi}_{0.5}\hbox {Mn}_{0.5}\hbox {O}_{2}\) by a polyacrylamide-assisted sol–gel method to form \(\hbox {Li}[\hbox {Li}_{0.2} \hbox {Ni}_{0.1} \hbox {Mn}_{0.5} \hbox {Co}_{0.2}]\hbox {O}_{2}\) and better electro-chemical performances were observed. Electrochemical impedance spectroscopy spectra were measured on 11 specific open circuit voltage levels on the initial charge profile. Then they were converted to the distribution of relaxation times (DRTs) g(\(\tau \)) by self-consistent Tikhonov regularization method. The obtained DRTs offered a higher resolution in the frequency domain and provided the number and the physical origins of loss processes clearly. Through the analysis of DRTs, the rapid augmentation of resistance to electronic conduction and charge transfer within the voltage range 4.46–4.7 V where the removal of \(\hbox {Li}_{2}\hbox {O}\) from \(\hbox {Li}_{2} \hbox {MnO}_{3}\) component took place was the most remarkable phenomenon and the \(\hbox {Co}^{3+}\) doping greatly reduced the resistance to electronic conduction Re. This gave us more evidence about the complicated ‘structurally integrated’ composite character of the material.     

Facile synthesis and characterization of rough surface $$\mathrm{V}_{2}\hbox {O}_{5}$$ nanomaterials for pseudo-supercapacitor electrode material with high capacitance

\(\hbox {V}_{2}\hbox {O}_{5}\) nanomaterials with rough surface were synthesized using commercial \(\hbox {V}_{2}\hbox {O}_{5}\), ethanol (EtOH) and \(\hbox {H}_{2}\hbox {O}\) as the starting materials by a simple hydrothermal route and combination of calcination. The electrochemical properties of \(\hbox {V}_{2}\hbox {O}_{5}\) nanomaterials as electrodes in a supercapacitor device were measured using cyclic voltammetry (CV) and galvanostatic charge–discharge (GCD) method. \(\hbox {V}_{2}\hbox {O}_{5}\) nanomaterials exhibit the specific capacitance of 423 F \(\hbox {g}^{-1}\) at the current density of 0.5 A \(\hbox {g}^{-1}\) and retain 327 F \(\hbox {g}^{-1}\) even at the high current density of 10 A \(\hbox {g}^{-1}\). The influence of the ratio of \(\hbox {EtOH/H}_{2}\hbox {O}\), the calcined time and temperature on the morphology, purity and electrochemical property of the products is discussed in detail. The results revealed that the ratio of \(\hbox {EtOH}\hbox {/}\hbox {H}_{2}\hbox {O}= 10\hbox {/}25\) and calcination at \(400{^{\circ }}\hbox {C}\) for 2–4 h are favourable for preparing \(\hbox {V}_{2}\hbox {O}_{5}\) nanomaterials and they exhibited the best electrochemical property. The novel morphology and high specific surface area are the main factors that contribute to high electrochemical performance of \(\hbox {V}_{2}\hbox {O}_{5}\) nanomaterials during the charge–discharge processes. It turns out that \(\hbox {V}_{2}\hbox {O}_{5}\) nanomaterials with rough surface is an ideal material for supercapacitor electrode in the present work.     

Structural and physical properties of $$\hbox {Sm}^{3+}$$ doped magnesium zinc sulfophosphate glass

Samarium (\(\hbox {Sm}^{3+})\) doped magnesium zinc sulfophosphate glass system of composition (60–\(x)\hbox {P}_{2}\hbox {O}_{5}\)–20MgO–20ZnSO\(_{4}\)–\(x\hbox {Sm}_{2}\hbox {O}_{3}\) (\(x =\) 0.0, 0.5, 1.0, 1.5 and 2.0 mol%) were synthesized using melt-quenching technique. The structure and physical properties of prepared glass samples were characterized. The X-ray diffraction pattern verified their amorphous nature. The physical properties such as density, refractive index, molar volume, rare earth ion concentration, etc. were calculated. The decrease in the optical bandgap energy with increasing \(\hbox {Sm}_{2}\hbox {O}_{3}\) contents was attributed to the alteration in the glass network structures. Fourier transformed infrared spectra and Raman analyses manifested the depolymerization of \(\hbox {ZnSO}_{4}\) in the phosphate host matrix. The present findings may be beneficial for the advancement of functional glasses.     

Effect of annealing temperature and $$\hbox {CdCl}_{2}$$ treatment on the photo-conversion efficiency of $$\hbox {CdTe/Zn}_{0.1}$$CdTe/Zn0.1$$\hbox {Cd}_{0.9}$$Cd0.9S thin film solar cells

We report the effects of annealing in conjunction with \(\hbox {CdCl}_{2}\) treatment on the photovoltaic properties of \(\hbox {CdTe/Zn}_{0.1}\hbox {Cd}_{0.9}\)S thin film solar cells. CdTe layer is subjected to dry \(\hbox {CdCl}_{2}\) treatment by thermal evaporation method and subsequently, heat treated in air using a tube furnace from 400 to \(500{^{\circ }}\hbox {C}\). AFM and XRD results show improved grain size and crystallographic properties of the CdTe film with dry \(\hbox {CdCl}_{2}\) treatment. This recrystallization and grain growth of the CdTe layer upon \(\hbox {CdCl}_{2}\) treatment translates into improved photo-conversion efficiencies of \(\hbox {CdTe/Zn}_{0.1}\hbox {Cd}_{0.9}\)S cell. The results of dry \(\hbox {CdCl}_{2}\) treatment were compared with conventional wet \(\hbox {CdCl}_{2}\) treatment. Photo-conversion efficiency of 5.2% is achieved for dry \(\hbox {CdCl}_{2}\)-treated cells in comparison with 2.4% of wet-treated cell at heat treatment temperature of \(425{^{\circ }}\hbox {C}\).     

Evaluation of the elastic properties of monovalent oxides using $$\hbox {TeO}_{2}$$-based glasses

Quaternary tellurite glasses with composition \(75\hbox {TeO}_{2}\)–\(5\hbox {WO}_{3}\)–\(15\hbox {Nb}_{2} \hbox {O}_{5}\)–\(5\hbox {M}_{x} \hbox {O}_{y}\) in mol%, where \(\hbox {M}_{x}\hbox {O}_{y}\) = (\(\hbox {Na}_{2}\hbox {O}, \, \hbox {Ag}_{2}\hbox {O}\), ZnO, MgO, CuO, NiO, \(\hbox {TiO}_{2}\), \(\hbox {MnO}_{2}\)), were prepared by the normal melt-quenching method. The ultrasonic velocities (longitudinal and shear) were measured in these glasses using the pulse-echo technique at room temperature. Their elastic moduli, microhardness and Debye temperature were calculated and discussed in terms of the modifier’s ionicity and quantitatively in terms of number of bonds per unit volume and the cross-link density. In this study, the values of ultrasonic velocities, elastic moduli, Debye temperature and microhardness were found to be strongly dependent on three factors, namely: (i) modifier’s ionicity; (ii) trigonal pyramid (\(\hbox {TeO}_{3}\))/trigonal bipyramid (\(\hbox {TeO}_{4}\)) ratio; and (iii) glass transition temperature \(T_\mathrm{g}\). We used the Makishima and Mackenzie’s model to calculate the theoretical elastic moduli and to indicate that the experimental values were in good agreement with the theoretical values.     

Synthesis,characterization and electrochemical performance of $$\hbox {Li}_{2}\hbox {Ni}_{x}\hbox {Fe}_{1-x}\hbox {SiO}_{4}$$ cathode materials for lithium ion batteries

\(\hbox {Li}_{2}\hbox {Ni}_{x}\hbox {Fe}_{1-x}\hbox {SiO}_{4}\) (\(x = 0\), 0.2, 0.4, 0.6, 0.8 and 1) samples were prepared by a sol–gel process. The crystal structure of prepared samples of \(\hbox {Li}_{2}\hbox {Ni}_{x}\hbox {Fe}_{1-x}\hbox {SiO}_{4}\) was characterized using an X-ray diffractometer. Different crystallographic parameters such as crystallite size and lattice cell parameters have been calculated. Scanning electron microscopy and Fourier transform infrared spectroscopy investigations were carried out, which reveal the morphology and function groups of the synthesized samples. Furthermore, electrochemical impedance spectra measurements are performed. The obtained results indicated that the highest conductivity is achieved for the \(\hbox {Li}_{2}\hbox {Ni}_{0.4}\hbox {Fe}_{0.6}\hbox {SiO}_{4}\) electrode compound. It was observed that Li–\(\hbox {Li}_{2}\hbox {Ni}_{0.4}\hbox {Fe}_{0.6}\hbox {SiO}_{4}\) battery has initial discharge capacity of 164 mAh \(\hbox {g}^{-1}\) at 0.1C rate. The cycle life performance of all \(\hbox {Li}_{2}\hbox {Ni}_{x}\hbox {Fe}_{1-x}\hbox {SiO}_{4}\) batteries ranged between 100 and 156 mAh \(\hbox {g}^{-1}\) with coulombic efficiency range between 70.9 and 93.9%.     

Role of reactive species in the photocatalytic degradation of amaranth by highly active N-doped $$\mathbf{WO}_{\mathbf{3}}$$

A novel, highly visible light active N-doped \(\hbox {WO}_{3}\) (\(\hbox {N}\)-\(\hbox {WO}_{3})\) is successfully synthesized via thermal decomposition of peroxotungstic acid–urea complex. The photocatalytic activity of \(\hbox {N}\)-\(\hbox {WO}_{3}\) is evaluated for the degradation of amaranth (AM) dye under visible and UVA light along with the role of reactive species, which has not yet been studied for \(\hbox {N}\)-\(\hbox {WO}_{3}\) photocatalysts. Doping of N into substitutional and interstitial sites of \(\hbox {WO}_{3}\) is confirmed by X-ray photoelectron spectroscopy and X-ray absorption near-edge spectroscopy. At a pH of 7, 1 g \(\hbox {l}^{-1}\) of \(\hbox {N}\)-\(\hbox {WO}_{3}\) can completely degrade \(10\,\hbox {mg } \hbox {l}^{-1}\) of AM within 1 h under visible and UVA light. For the degradation of AM by \(\hbox {N}\)-\(\hbox {WO}_{3}\) under visible and UVA light, \(\hbox {h}^{+}\) is found to be the main reactive species, while \(\cdot \hbox {OH}\) contributes to a lesser extent. On the contrary, \(^{1}\hbox {O}_{2}, \cdot \hbox {O}_{2}^{-}\) and \(\hbox {e}^{-}\) show negligible roles. The crucial role of \(\hbox {h}^{+}\) indicates effective suppression of electron–hole recombination after N doping. Dye sensitization and oxidation by reactive species are found to be the major pathway for the degradation of AM under visible and UVA light, respectively.     

Fabrication and enhanced photoluminescence properties of $$\hbox {NaLa}(\hbox {MoO}_{4})_{2}$$: $$\hbox {Sm}^{3+}$$Sm3+, $$\hbox {Bi}^{3+}$$Bi3+ phosphors with high efficiency white-light-emitting

The tetragonal scheelite-type \(\hbox {Sm}^{3+}\hbox {/Bi}^{3+}\) ions co-doped with \(\hbox {NaLa}(\hbox {MoO}_{4})_{2}\) phosphors were synthesized by a facile sol–gel and combustion process using citric acid as complexing agent. The crystal structure and morphology of these as-prepared samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Furthermore, UV-absorption and the photoluminescence (PL) properties of these phosphors were systematically investigated and the PL of the phosphors shows strong white light emissions. Efficient energy transfer from the \(\hbox {MoO}_{4}^{2-}\) group or \(\hbox {Bi}^{3+}\) ions to \(\hbox {Sm}^{3+}\) ions was established by PL investigation excited at 405 nm. The PL intensity of the studied materials was investigated as a function of different \(\hbox {Sm}^{3+}\) and \(\hbox {Bi}^{3+}\) concentrations. The PL investigations revealed that the phosphors exhibit apparent characteristic emissions, which is ascribed to the transition from the ground state energy level \(^{4}\hbox {G}_{5/2}\) to excited state energy levels \(^{6}\hbox {H}_{\mathrm{J}}\) (\(J= 5/2, 7/2, 9/2\)) and the \(\hbox {NaLa}(\hbox {MoO}_{4})_{2}\): 4 mol% \(\hbox {Sm}^{3+}\) and \(\hbox {NaLa}(\hbox {MoO}_{4})_{2}\): 4 mol% \(\hbox {Sm}^{3+}\), 8 mol% \(\hbox {Bi}^{3+}\) present white emissions with the CIE coordinates of (0.350, 0.285) and (0.285, 0.229), respectively. The absolute quantum efficiencies of the phosphors are 40% (\(\hbox {NaLa}(\hbox {MoO}_{4})_{2}\): 4 mol% \(\hbox {Sm}^{3+}\)) and 52% (\(\hbox {NaLa}(\hbox {MoO}_{4})_{2}\): 4 mol% \(\hbox {Sm}^{3+}\), 8 mol% \(\hbox {Bi}^{3+}\)), respectively.     

Superconducting epitaxial $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\delta }$$ on $$\hbox {SrTiO}_{3}$$SrTiO3-buffered Si(001)

Thin films of optimally doped(001)-oriented \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }\) are epitaxially integrated on silicon(001) through growth on a single crystalline \(\hbox {SrTiO}_{3}\) buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the \(\hbox {SrTiO}_{3}\) buffer enables high quality \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }\) films exhibiting high transition temperatures to be integrated on Si. For a 30-nm thick \(\hbox {SrTiO}_{3}\) buffer, 50-nm thick \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }\) films that exhibit a transition temperature of \(\sim \)93 K, and a narrow transition width (<5 K) are achieved. The integration of single crystalline \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }\) on Si(001) paves the way for the potential exploration of cuprate materials in a variety of applications.     

Elastic and thermodynamic properties of zirconium- and hafnium-doped $$\hbox {Rh}_{3}\hbox {V}$$ intermetallic compounds: potential aerospace material

Structural, electronic, mechanical and thermodynamic properties of \(\hbox {Rh}_{3}\hbox {Zr}_{x}\hbox {V}_{1-x}\) and \(\hbox {Rh}_{3}\hbox {Hf}_{x}\hbox {V}_{1-x}\) (\(x = 0\), 0.125, 0.25, 0.75, 0.875 and 1) combinations are investigated by means of first-principles calculations based on the density functional theory within the generalized gradient approximation. Here, \(\hbox {Rh}_{3}\hbox {V}\) is chosen as the parent binary compound and the doping elements are zirconium and hafnium with the above-mentioned concentrations. The calculated lattice parameters and elastic modulus of binary \(\hbox {Rh}_{3}\hbox {Hf}\), \(\hbox {Rh}_{3}\hbox {V}\) and \(\hbox {Rh}_{3}\hbox {Zr}\) are in good agreement with the available experimental and other theoretical results. In this study, the following ternary materials viz., \(\hbox {Rh}_{3}\hbox {Zr}_{0.75}\hbox {V}_{0.25}\), \(\hbox {Rh}_{3}\hbox {Hf}_{0.25}\hbox {V}_{0.75}\) and \(\hbox {Rh}_{3}\hbox {Hf}_{0.75}\hbox {V}_{0.25}\) are found to be brittle/more brittle than the parent binary compound \(\hbox {Rh}_{3}\hbox {V}\), whereas the other ternary combinations, namely \(\hbox {Rh}_{3}\hbox {Zr}_{0.125}\hbox {V}_{0.875}\), \(\hbox {Rh}_{3}\hbox {Zr}_{0.25}\hbox {V}_{0.75}\), \(\hbox {Rh}_{3}\hbox {Zr}_{0.875}\hbox {V}_{0.125}\), \(\hbox {Rh}_{3}\hbox {Hf}_{0.125}\hbox {V}_{0.875}\) and \(\hbox {Rh}_{3}\hbox {Hf}_{0.875}\hbox {V}_{0.125}\) are found to be more ductile than \(\hbox {Rh}_{3}\hbox {V}\). The more brittle ternary combination, namely \(\hbox {Rh}_{3}\hbox {Hf}_{0.75}\hbox {V}_{0.25}\) (\(B = 229.32\,\hbox {GPa}\)) has the maximum Young’s modulus, shear modulus and hardness values; whereas the more ductile ternary \(\hbox {Rh}_{3}\hbox {Zr}_{0.25}\hbox {V}_{0.75}\) combination (\(B = 243.54\,\hbox {GPa}\)) is found to have the least values of Young’s modulus, shear modulus and hardness. The band structure, density of states histograms and charge density plots are drawn and discussed. Computed Debye temperature (\(\theta _{\mathrm{D}}\)), Grüneisen parameter (\(\zeta \)) and melting temperature (\(T_{\mathrm{m}})\) of the parent binary compound \(\hbox {Rh}_{3}\hbox {V}\), the more brittle \(\hbox {Rh}_{3}\hbox {Hf}_{0.75}\hbox {V}_{0.25}\) combination and the more ductile \(\hbox {Rh}_{3}\hbox {Zr}_{0.25}\hbox {V}_{0.75}\) combination are given by (895 K, 1.3491, 2788 K), (790 K, 1.2701, 2736 K) and (698 K, 1.7972, 2529 K), respectively.     

High-pressure studies of superconductivity in $$\hbox {BiO}_{0.75}\hbox {F}_{0.25}\hbox {BiS}_{2}$$

\(\hbox {BiO}_{0.75}\hbox {F}_{0.25}\hbox {BiS}_{2}\) crystallizes in tetragonal CeOBiS\(_{2}\) structure (S. G. P4/nmm). We have investigated the effect of pressure on magnetization measurements. Our studies suggest improved superconducting properties in polycrystalline samples of \(\hbox {BiO}_{0.75}\hbox {F}_{0.25}\hbox {BiS}_{2}\). The \(T_{\mathrm{c}}\) in our sample is 5.3 K, at ambient pressure, which is marginal but definite enhancement over \(T_{\mathrm{c}}\) reported earlier (= 5.1 K). The upper critical field \(H_{\mathrm{c}2}\)(0) is greater than 3 T, which is higher than earlier report on this material. As determined from the M–H curve, both \(H_{\mathrm{c}2}\) and \(H_{\mathrm{c}1}\) decrease under external pressure P (0 \(\le P \le \) 1 GPa). We observe a decrease in critical current density and transition temperature on applying pressure in \(\hbox {BiO}_{0.75}\hbox {F}_{0.25}\hbox {BiS}_{2}\).     

Microwave hydrothermal synthesis and upconversion luminescence properties of $$\hbox {Yb}^{3+}$$/$$\hbox {Tm}^{3+}$$Tm3+ co-doped $$\hbox {NaY}(\hbox {MoO}_{4})_{2}$$NaY(MoO4)2 phosphor

Tetragonal \(\text {NaY}(\text {MoO}_{4})_{2}\) (NYM) phosphors co-doped with \(\hbox {Yb}^{3+}\) and \(\hbox {Tm}^{3+}\) ions were synthesized through microwave hydrothermal method followed by calcining treatment. Powder X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and photoluminescence spectra were used to characterize the properties of as-prepared samples. The results show that \(\hbox {Yb}^{3+}\)/\(\hbox {Tm}^{3+}\) co-doped NYM displayed bright blue emission near 472 and 476 nm (\(^{1}\hbox {G}_{4}\rightarrow {}^{3}\hbox {H}_{6}\) transition), strong near-infrared upconversion (UC) emission around 795 nm (\(^{3}\hbox {H}_{4}\rightarrow {}^{3}\hbox {H}_{6}\) transition). The optimum doping concentrations of \(\hbox {Yb}^{3+}\) and \(\hbox {Tm}^{3+}\) for the most intense UC luminescence were obtained, and the related UC mechanism of \(\hbox {Yb}^{3+}\)/\(\hbox {Tm}^{3+}\) co-doped NYM depending on pump power was studied in detail.     

Resistance-switching properties of Bi-doped $$\hbox {SrTiO}_{3}$$ films for non-volatile memory applications with different device structures

\(\hbox {SrTiO}_{3}\) and Bi-doped \(\hbox {SrTiO}_{3}\) films were fabricated with different device structures using the sol–gel method for non-volatile memory applications, and their resistance-switching behaviour, endurance and retention characteristics were investigated. \(\hbox {SrTiO}_{3}\) and \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si or Pt have the same phase structure, morphologies and grain size; however, the grain size of the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si is slightly larger than those of the \(\hbox {SrTiO}_{3}\) films grown on Si and the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Pt. The \(\hbox {SrTiO}_{3}\) or \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si or Pt all exhibit bipolar resistive-switching behaviour and follow the same conductive mechanism; however, the \(\hbox {Ag}/\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}/\hbox {Si}\) device possesses the highest \(R_{\mathrm{HRS}}{/}R_{\mathrm{LRS}}\) of \(10^{5}\) and the best endurance and retention characteristics. The doping of Bi is conducive to enhance the \(R_{\mathrm{HRS}}{/}R_{\mathrm{LRS}}\) of the \(\hbox {SrTiO}_{3}\) films; meanwhile, the Si substrates help improve the endurance and retention characteristics of the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films.     

Sn-adopted fullerene $$(\hbox {C}_{60})$$ nanocage as acceptable catalyst for silicon monoxide oxidation

In recent years, the discovery of metal catalysts for the oxidation of silicon monoxide (SiO) has become extremely important. In first step, the Sn adoption of fullerene (\(\hbox {C}_{60})\) was investigated and then activation of surface of \(\hbox {Sn-C}_{60}\) via \(\hbox {O}_{2}\) molecule was examined. In second step, the SiO oxidation on surface of \(\hbox {Sn-C}_{60}\) via Langmuir Hinshelwood (LH) and Eley Rideal (ER) mechanisms was investigated. Results show that \(\hbox {O}_{2}\hbox {-Sn-C}_{60}\) can oxidize the SiO molecule via \(\hbox {Sn-C}_{60}\hbox {-O-O}^{*} + \hbox {SiO}\rightarrow \hbox {Sn-C}_{60}\hbox {-O-O}^{*}\hbox {-SiO} \rightarrow \hbox {Sn-C}_{60}\hbox {-O}^{*} + \hbox {SiO}_{2}\) and \(\hbox {Sn-C}_{60}\hbox {-O}^{*} + \hbox {SiO}\rightarrow \hbox {Sn-C}_{60} + \hbox {SiO}_{2}\) reactions. Results show that SiO oxidation via the LH mechanism has lower energy barrier than ER mechanism. Finally, \(\hbox {Sn-C}_{60}\) is an acceptable catalyst with high performance for SiO oxidation in normal temperature.     

Temperature and Heat Flow Rate Calibration of a Calvet Calorimeter from $$0\,{^{\circ }}\hbox {C}$$ to $$190 \,{^{\circ }}\hbox {C}$$19

This study describes the temperature and heat flow rate calibrations of a Calvet calorimeter (SETARAM, BT2.15) in the temperature range of 0–190 \({^{\circ }}\hbox {C}\). Temperature calibration is carried out using three reference materials, namely water, gallium, and indium, as specified in the International Temperature Scale of 1990 (ITS-90). The sample temperature of the Calvet calorimeter is corrected by the obtained mean value, \(-0.489 \,{^{\circ }}\hbox {C}\), of the measured extrapolated peak onset temperature (\(T_{e})\) when the heating rate (\(\upbeta )\) is zero (\(\Delta T_\mathrm{corr }(\upbeta ~=~0\))). The heat flow rate is calibrated using a reference material with a known heat capacity, namely SRM 720 \(\alpha \)-\(\hbox {Al}_{2}\hbox {O}_{3}\) (synthetic sapphire), which is traceable to the National Institute of Standards and Technology. From the heat flow rate measurements of the blank baseline and SRM 720, the proportional calibration factor, \(\hbox {K}_{\Phi }\), in the 0–190\( \,{^{\circ }}\hbox {C}\) temperature range was determined. The specific heat capacity of copper was measured with the obtained calibration values, and the measured data show consistency with the reference value.     

Rectifying resistance-switching behaviour of Ag/SBTO/STMO/$$\hbox {p}^{+}$$-Si heterostructure films

The \(\hbox {Sr}_{0.88}\hbox {Bi}_{0.12}\hbox {TiO}_{3}/\hbox {SrTi}_{0.92}\hbox {Mg}_{0.08}\hbox {O}_{3}\) (SBTO/STMO) heterostructure films were prepared on \(\hbox {p}^{+}\hbox {-Si}\) substrates by sol–gel spin-coating technique, and the films had good crystallinity and uniform grain distribution. The heterostructure films with a structure of Ag/SBTO/STMO/\(\hbox {p}^{+}\hbox {-Si}\) exhibited a bipolar, remarkable resistance-switching characteristic, and \(R_{\mathrm{HRS}}/R_{\mathrm{LRS}}\,\,{\sim }10^{4}\). More importantly, the heterostructure films showed rectifying characteristic in the low resistance state (LRS), and the rectification ratio can reach \(10^{2 }\) at \(\pm 1\hbox { V}\). The dominant resistive-switching conduction mechanism of high resistance state (HRS) was Ohmic behaviour, and the LRS changed to space charge-limited current (SCLC).