晶内/晶间复合型Al2O3/Ni纳米金属陶瓷显微结构和力学性能的研究

采用非均相沉淀法和热压工艺制备了Al2O3/Ni纳米金属陶瓷。在1450℃热压γ-Al2O3/Ni复合粉体得到相对密度＞985的金属陶瓷。结果表明，Ni颗粒均匀分布在基体中，其中＜100nm的Ni颗粒位于Al2O3晶内，100－300nm的分布在晶界，形成了晶内／晶界复合型纳米金属陶瓷。同单相Al2O3相比，Al2O3/Ni金属陶瓷的三点抗弯强度和断裂韧性分别增加了26％和795。分析了纳米金属陶瓷的增强增韧机制。     

Al2O3/Ni金属陶瓷显微结构和力学性能的研究

采用包裹工艺和热压工艺制备了Al2O3/Ni金属陶瓷.在1450°C热压Ni包裹Al2O3复合粉体得到相对密度＞98%的金属陶瓷,当温度＞1400°C时,随着Ni含量的增加致密度下降.Ni颗粒位于三角晶界,随着含量的增加,断裂方式由沿晶转为穿晶断裂;在A12O3基体中引入Ni颗粒能够降低晶粒尺寸,提高强度和韧性.与单相Al2O3的力学性能相比,综合力学性能较好的NA4金属陶瓷的抗弯强度和断裂韧性分别提高了19%和35%,分析了金属陶瓷的增强增韧机制.     

残余热应力对Al2O3/Ni金属陶瓷断裂行为和力学性能的影响

运用残余热应力理论定性地解释也残余热应力对Al2O3/Ni金属陶瓷断裂行为和力学性能的影响，Ni颗粒位于Al2O3晶内或Ni含量低时，在Al2O3-Al2O3晶界产生张应力，易发生沿晶断裂；而其位于Al2O3晶界或Ni含量高时，在Al2O3-Al2O3晶界产生压应力，易产生穿晶断裂。     

Al_2O_3-ZrO_2/W/Cr/Ni/Co金属陶瓷的断裂韧性

以Al2O3-ZrO2复合粉末、W、Cr、Ni、Co粉末为原料,采用热压烧结工艺制备了性能优良的Al2O3-ZrO2/W/Cr/Ni/Co金属陶瓷复合材料。通过SEM,EDS,XRD等手段分析其微观组织,单边梁开口法(SENB)测量其断裂韧性。实验结果表明在1320℃,20MPa条件下热压烧结制备的Al2O3-ZrO2/W/Cr/Ni/Co金属陶瓷的断裂韧性为7.16±0.4MPa.m1/2,硬度为83.3HRA,横向断裂强度为540MPa,相对致密度为97.4%;对维氏压痕下裂纹扩展进行了分析,其增韧机理为延性金属对裂纹的桥梁作用和氧化锆相变增韧,在裂纹通过时硬质相以沿晶断裂为主。     

Al2O3/Ni金属陶瓷力学性能和介电性能的研究

以热压烧结的方法制备了Al2O3/Ni金属陶瓷,探讨了Al2O3/Ni金属陶瓷显微结构、力学性能及微波介电性能随Ni粒子含量变化的规律.结果表明,在垂直于压力方向上,Ni粒子有明显的受压拉伸现象;当Ni粒子含量从5%(体积分数)增加至20%(体积分数)时,金属陶瓷中Ni粒子的分布由孤立向部分桥连方式转变.随Ni粒子含量的增加,金属陶瓷致密度略有下降,抗弯强度明显降低.与纯氧化铝陶瓷相比,含20%(体积分数)Ni粒子Al2O3/Ni金属陶瓷的断裂韧性提高了50%左右,达到6.4MPa·m1/2.复介电常数测试结果表明,在8.2～12.4GHz频率范围内,金属陶瓷复介电常数的实部和损耗随Ni粒子含量的增加逐渐上升.当Ni粒子含量达到20%(体积分数)时,由于Ni粒子之间的部分桥连现象而使介电常数虚部在一定频段出现负值.     

Al2O3/NiO包裹Ni纳米颗粒的结构和磁性

用电弧法蒸发Ni-Al合金(4%～5%Al,质量分数),制备了Al2O3/NiO包裹Ni及Ni-Al合金纳米颗粒.高分辨电镜显示该纳米颗粒具有壳核结构,核为纳米Ni及Ni-Al合金,壳为Al2O3/NiO复合氧化物.壳的厚度为2～4 nm,颗粒的尺寸为5～60 nm.壳核结构防止纳米Ni颗粒的进一步氧化和团聚.饱和磁化强度为29.6 Am2/kg,矫顽力为4.13 kA/m.由于铁磁和反铁磁性相界面处存在交换耦合作用,磁滞曲线出现小的偏置.     

Ni-纳米Al2O3复合镀层结构和耐磨性能研究

采用复合电镀技术通过向电镀溶液中加入平均粒度为90nm的Al2O3粉,在Ni基材上制备了Ni-纳米Al2O3复合镀层,应用扫描电镜(SEM)、X射线衍射(EDAX)及透射电镜(TEM)等手段对复合镀层的表面形貌和结构进行了表征,并通过试验考察了镀层的磨损性能.结果表明,纳米Al2O3颗粒均匀分布在Ni纳米晶中;纳米Al2O3颗粒的加入不仅细化了基体Ni的晶粒尺寸,而且还具有弥散强化作用,从而提高了Ni-Al2O3纳米复合镀层的硬度和耐磨性能.     

纳米晶 Ni1-x ZnxFe2O4铁氧体粉料的制备及其磁性能研究

采用喷射-共沉淀法制备了纳米晶Ni1-xZnxFe2O4（0≤x≤1.0）铁氧体粉料.通过TG-DSC、XRD、SEM、TEM、BET等测试手段分析了其微观结构和形貌,用振动样品磁强计测量其室温下磁性能.结果表明：喷射-共沉淀法制备的粉料颗粒细小均匀、形状完整.600℃下煅烧1.5h,样品晶粒尺寸为30nm左右,平均颗粒尺寸＜100nm.室温下,样品比饱和磁化强度随Zn^2＋含量增加而变化,当x=0.5时,最大比饱和磁化强度σs为66.8A·m^2/kg.当晶粒大小为41nm时,纳米晶Ni0.5Zn0.5Fe2O4铁氧体矫顽力达到最大值5.06kA/m,随后又随晶粒尺寸增大而减小.这归因于纳米晶软磁材料中强烈的无序磁晶各向异性模式的影响.     

Al2O3基复合材料中纳米SiC对微观结构的影响

本文从烧结温度、基体晶粒大小、断裂方式、SiC在基体中的分布等几个方面研究了纳米SiC颗粒的加入对Al2O3微观结构的影响．用非均相沉淀工艺制备的纳米SiC-Al2O3复合粉体，具有Al2O3颗粒包裹纳米SiC的特点，提高了烧结温度，明显使Al2O3晶粒变小，并且抑制晶粒异常长大，试样的断裂方式从以沿晶断裂为主转变到以穿晶断裂为主．SiC在Al2O3中分布均匀，大部分位于晶粒内，少部分位于晶界上．这种微观结构有利于力学性能的提高．     

纳米ZrO2与微米Al2O3复合陶瓷的断裂模式

研究了两种微米Al2O3与纳米ZrO2复合陶瓷的裂纹扩展过程与显微结构的关系.结果表明,Al2O3晶粒内部形成纳米级或亚微米级ZrO2颗粒,是复合陶瓷的断裂模式从沿晶断裂向穿晶断裂转化的主因.ZrO2含量较低有利于Al2O3晶界迁移包裹纳米ZrO2形成内晶结构;而ZrO2含量较高使主晶相长大受到抑止,不利于形成内晶结构,趋向于沿晶断裂.裂纹穿晶扩展需要的驱动力比沿晶断裂大,故裂纹扩展阻力曲线的上升趋势更加显著.裂纹穿晶扩展路径主要取决于内晶颗粒产生的弹性应力场的性质.     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.