Sputtered FeCoN soft magnetic thin films with high resistivity

Fe/sub 70/Co/sub 30/N thin films with thickness from 20 to 1100 /spl Aring/ were prepared by radio- frequency reactive sputtering in an N/sub 2/--Ar mixture. The FeCoN films prepared in a low nitrogen flow rate percentage (<6%) and sputtering pressure (<8 mTorr) have a high B/sub s/ of about 24.0 kG, but a moderate hard-axis coercivity H/sub ch/ of 5-30 Oe. With further increase in N/sub 2/ percentage or sputtering pressure, films become significantly softer, with H/sub ch/ of about 0.1-0.6 Oe, and have a higher resistivity of up to about 160 /spl mu//spl Omega//spl middot/cm. The change in the magnetic properties with nitrogen flow rate percentage and sputtering pressure can be attributed to the formation of an ultrafine grain size nanocrystalline FeCoN thin film as observed by high-resolution transmission electron microscope. The soft properties of FeCoN films with nano-sized crystallites remain stable even after being annealed at 270/spl deg/C.     

Shear mode coupling and tilted grain growth of AlN thin films in BAW resonators

Polycrystalline AlN thin films were deposited by RF reactive magnetron sputtering on Pt(111)/Ti electrode films. The substrates were tilted by an angle ranging from 40/spl deg/ to 70/spl deg/ with respect to the target normal. A low deposition temperature and a high sputter gas pressure were found ideal for tilted growth. The resulting grain tilt angle amounts to about half the substrate tilt angle. For coupling evaluation, 5 GHz solidly mounted resonator structures have been realized. The tilted grain AlN films exhibited a permittivity in the 9.5-10.5 range and loss tangent of 0.3%. Two shear modes as well as the longitudinal mode could be clearly identified. The coupling coefficient k/sub eff//sup 2/, of the fundamental thickness shear mode (TSO) was found to be about 0.5%, which is compatible with a c-axis tilt of about 6/spl deg/.     

Preparation of ferroelectric Ba(Ti/sub 0.85/Sn/sub 0.15/)O/sub 3/ thin films by metal-organic decomposition

Ferroelectric Ba(Ti/sub 0.85/Sn/sub 0.15/)O/sub 3/ (BTS/sub 15/) thin film is newly prepared on the Pt/Ti/SiO/sub 2//Si substrate by metal-organic decomposition. The firing condition is determined by thermogravimetric and differential thermal analysis. The BTS/sub 15/ thin film with a flat surface and uniform thickness is obtained by spin coating in N/sub 2/ atmosphere that avoids moisture. The BTS/sub 15/ film has a perovskite phase and a preferential [110] texture. It is also found that the crystalline structure is cubic at 24/spl deg/C with a lattice constant of 4.01 /spl Aring/, and a grain size of about 30 nm was estimated by Scherrer equation and SEM image. From P-E hysteresis loop at 20/spl deg/C, the polarization at E=0 and the electric field at P=0 are found to be 1.07 /spl mu/C/cm/sup 2/ and 24.0 kV/cm, respectively. It is observed that the dielectric constant decreases monotonously from about 830 to 630 with increasing temperature ranging from 20/spl deg/C to 50/spl deg/C. Finally, it is found that the BTS/sub 15/ thin film shows a sufficient ferroelectricity and is an attractive material for functional ferroelectric devices, such as thermal-type infrared sensors.     

Thickness-dependent leakage current of (polyvinylidene fluoride/lead titanate) pyroelectric detectors

The novel pyroelectric IR detectors have been fabricated using the Polyvinylidene Fluoride (PVDF)/Lead Titanate (PT) pyroelectric bilayer thin films, which were deposited onto Pt(111)/SiO/sub 2//Si(100) substrates by a sol-gel process. The ceramic/polymer structure was constructed of the randomly oriented polycrystalline PT film (/spl sim/1 /spl mu/m) heated at 700/spl deg/C for 1 h and the /spl beta/-phase PVDF film crystallized at 65/spl deg/C for 2 h. The effects of PVDF thin film thickness (100 /spl sim/ 580 nm) on the pyroelectric response of IR detectors were studied. The results show that the depositions of PVDF thin films onto the PT films will cause the leakage current (J) of the detectors decrease from 6.37/spl times/10/sup -7/ A/cm/sup 2/ to 3.86/spl times/10/sup -7/ A/cm/sup 2/. The specific detectivity (D*) measured at 100 Hz decreased from 2.72/spl times/10/sup 7/ cm/spl middot/Hz/sup 1/2//W for detector without PVDF to 1.71/spl times/10/sup 7/ cm/spl middot/Hz/sup 1/2//W for detector with PVDF thickness of 580 nm. By optimizing the ratio of the specific detectivity (D*) to leakage current, D*/J, the detector with PVDF thickness of 295 nm exhibits the best performance.     

Ultrahigh-sensitive tin-oxide microsensors for H/sub 2/S detection

Ultrahigh-sensitivity SnO/sub 2/-CuO sensors were fabricated on Si(100) substrates for detection of low concentrations of hydrogen sulfide. The sensing material was spin coated over platinum electrodes with a thickness of 300 nm applying a sol-gel process. The SnO/sub 2/-based sensors doped with copper oxide were prepared by adding various amounts of Cu(NO/sub 3/)/sub 2/.3H/sub 2/O to a sol suspension. Conductivity measurements of the sensors annealed at different temperatures have been carried out in dry air and in the presence of 100 ppb to 10-ppm H/sub 2/S. The nanocrystalline SnO/sub 2/-CuO thin films showed excellent sensing characteristics upon exposure to low concentrations of H/sub 2/S below 1 ppm. The 5% CuO-doped sensor having an average grain size of 20 nm exhibits a high sensitivity of 2.15/spl times/10/sup 6/ (R/sub a//R/sub g/) for 10-ppm H/sub 2/S at a temperature of 85/spl deg/C. By raising the operating temperature to 170/spl deg/C, a high sensitivity of /spl sim/10/sup 5/ is measured and response and recovery times drop to less than 2 min and 15 s, respectively. Selectivity of the sensing material was studied toward various concentrations of CO, CH/sub 4/, H/sub 2/, and ethanol. SEM, XRD, and TEM analyses were used to investigate surface morphology and crystallinity of SnO/sub 2/ films.     

Influence of spinel substrate and over-layer for enhanced SAW and AO properties with KNbO3 thin film

Surface acoustic wave (SAW) propagation characteristics have been studied using modeling calculations for a potassium niobate (KNbO/sub 3/) thin film-layered structure with [001] and [110] orientation on a single crystal spinel (MgAl/sub 2/O/sub 4/) substrate, and a spinel buffer layer on silicon. Variation in the electromechanical coupling and acoustic attenuation has been compared. A significantly high value of coupling factor (k/sub max//sup 2/=23%) is obtained for the [001]KNbO/sub 3//spinel structure by introducing an optimum thickness of spinel over-layer for potential wide bandwidth SAW device applications. The dispersion characteristics with the [110] KNbO/sub 3/ orientation indicate an initial peak in the coupling coefficient value (k/sub max//sup 2/=8.8%) at a relatively low KNbO/sub 3/ film thickness that appears attractive for fabricating devices with thinner films. The KNbO/sub 3/ film with [001] orientation is found attractive for efficient acousto-optic (AO) device application with the formation of a symmetric waveguide structure (spinel(0.5 /spl mu/m)/KNbO/sub 3/(1.0 /spl mu/m)/spinel). A high value of k/sup 2/=23.5% with 50% diffraction efficiency has been obtained for the spinel(0.5 /spl mu/m)/KNbO/sub 3/(1.0 /spl mu/m)/spinel structure at 1 GHz SAW frequency and 633 nm optical wavelength at a very low input drive power of 15.4 mW.     

High-potential magnetic anisotropy of CoPtCr-SiO/sub 2/ perpendicular recording media

The magnetic anisotropy of CoPtCr-SiO/sub 2/ perpendicular recording media, including higher energy terms, was studied as a function of film composition and seed layer materials. All series of CoPtCr films with various Cr content, deposited on Ru seed layers, show maximum values of total anisotropy K/sub u/ at 25-30 at%Pt. The maximum value for CoPt(Cr=0) films reaches /spl sim/15/spl times/10/sup 6/ erg/cm/sup 3/. The addition of SiO/sub 2/ to the CoPtCr films reduces the grain K/sub u/, however the grain K/sub u/ maintains a large value of 8/spl times/10/sup 6/ erg/cm/sup 3/ even when 10at%SiO/sub 2/ is added to (Co/sub 90/Cr/sub 10/)/sub 80/Pt/sub 20/, for instance, which indicates the high-potential thermal stability. Theoretical calculations for media designs of 400 Gbits/in/sup 2/ revealed that the ratio of the high-energy anisotropy term K/sub u2/ to K/sub u1/(K/sub u/=K/sub u1/+K/sub u2/) is required to be 0.2-0.35 to enhance the energy barrier for the remanent state, without a notable change in switching field. The films deposited on Ru seed layers were found to show negligibly small K/sub u2/ values, however, the values of K/sub u1/ and K/sub u2/ vary significantly with the seed layer material used. K/sub u1/ decreases almost linearly as the K/sub u2/ value increases. It is concluded that CoPtCr films have a sufficient potential in the values of K/sub u1/ and K/sub u2/ for high-density perpendicular media.     

Influence of silicon dioxide-silicon interface trap charges on the performance of monolithic metal-zinc oxide-silicon nitride-silicon dioxide-silicon convolver

An enhancement in the convolution efficiency is obtained by annihilating the SiO/sub 2/-Si interface trap charges in the metal-ZnO-Si/sub 3/N/sub 4/-SiO/sub 2/-Si convolver structure. The annealing process uses a source of hydrogen created underneath the SiO/sub 2/-Si interface by implanting H/sub 3//sup +/ ion followed by rapid thermal anneal of 5s at 900/spl deg/C. The silicon nitride layer is inducted to protect ZnO films from hydrogen influx during low temperature oxygen anneal.     

Magnetic and structural properties of Co ion-implanted GaN

A GaN epilayer was grown on Al/sub 2/O/sub 3/ substrate by metal-organic chemical vapor deposition, and Co/sup -/ ions with a dose of 3/spl times/10/sup 16/ cm/sup -2/ were implanted into GaN at 350/spl deg/C. The implanted samples were postannealed at 700/spl deg/C-900/spl deg/C to recrystallize the samples and to remove implantation damage. We have investigated the magnetic and structural properties of Co ion-implanted GaN by using X-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometer, and X-ray photoelectron spectroscopy (XPS). XRD results did not show any peaks associated with the second phase formation, and only the diffraction from the GaN layer and substrate structure were observed. The temperature dependence of magnetization taken in zero-field-cooling and field-cooling conditions showed the features of superparamagnetic system in films annealed at 700/spl deg/C-900/spl deg/C. The magnetization curves at 5 K for samples annealed at 700/spl deg/C-900/spl deg/C exhibits ferromagnetic hysteresis loops, and the highest residual magnetization (M/sub R/) and coercivity (H/sub c/) of M/sub R/=1.5/spl times/10/sup -4/ emu/g and H/sub c/=107 Oe were found in the 800/spl deg/C annealed sample. XPS measurement showed the metallic Co 2p core levels and the metallic valence band spectra for as-implanted and 700/spl deg/C-900/spl deg/C annealed samples. From these, it could be explained that the magnetic property of our films originated from Co and CoGa magnetic clusters.     

Effects of Ti on N distribution and diffusion in FeTiN thin films

We studied the distribution and diffusion of N atoms in FeTiN single-layer and bilayer thin films by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). We found that in as-deposited films N atoms are first absorbed by Ti atoms, the rest being dissolved into FeTi lattices. Ti not only directly absorbs N by chemical bonding, but also decreases the energy of the N atoms that are dissolved into FeTi lattices. The diffusion study of N atoms in single layer and bilayer films showed that although the presence of Ti stabilized the /spl alpha/ phase of FeTi lattices during 200/spl deg/C annealing, the diffusion length of dissolved N in FeTi (Ti/spl les/8 at.%) lattices was still comparable to the diffusion length of N in pure Fe. Thus, the addition of a small amount of Ti in /spl alpha/-Fe lattice can not completely stabilize N atoms in the film, and the induced magnetic anisotropy of the films can still be unstable, although the /spl alpha/ phase of FeTiN is stabilized by the addition of Ti. The distribution of N atoms in bilayer films can be fitted by a simple enthalpy model.     

Microstructure and Mechanical Properties of Multilayer Ti(C,N) Films by Closed-field Unbalanced Magnetron Sputtering Ion Plating

Ti(C, N) multilayer films have been prepared by closed-field unbalanced magnetron sputtering technology and using graphite target as the C supplier. Microstructural observation results showed that the Ti(C, N) films exhibited multilayer structure with most of fine nano-columnar Ti(C, N) grains existing in the films. The current of graphite target had an effect remarkably on the multilayer structure of films: the periodical thickness gradually increased as the current went up, but the grain size of films gradually decreased and even amorphous phase appeared as the current further increased. The microstructure of Ti(C, N) films changed from columnar crystallite to nanocomposite in high current of graphite target where the fine Ti(C, N) grains were distributed uniformly in the amorphous Ti(C, N) matrix, and the volume fraction of the amorphous phase increased with increasing current. Measurement results showed that the Ti(C, N) multilayer films have high microhardness and low friction coefficient, and especially the film deposited in the current of 0.9 A exhibits superior properties with optimizing hardness and friction coefficient. Based on the relationship of the microstructure and the properties of films, the multilayer structure and fine grain size of Ti(C, N) films are responsible for their well mechanical and friction properties. And choosing the graphite target as the C supplier is more propitious to decrease the friction coe±cients of films.     

Amorphous silicon two-color microbolometer for uncooled IR detection

This paper describes the modeling and design of two-color microbolometers for uncooled infrared (IR) detection. The goal is to develop a high resolution IR detector array that can measure the actual temperature and color of an object based on two spectral wavelength regions. The microbolometer consists of high temperature amorphous silicon (a-Si:H) thin film layer held above the substrate by Si/sub 3/N/sub 4/ bridge. A thin NiCr absorber with sheet resistance of 377 /spl Omega//sqr is used to enhance the optical absorption in the medium and long IR wavelength windows. A tunable micromachined Al-mirror was suspended underneath the detector. The mirror is switched between two positions by the application of an electrostatic voltage. The switching of the mirror between the two positions enables the creation of two wavelength response windows, 3-5 and 8-12 /spl mu/m. A comparison of the two response wavelength windows enables the determination of the actual temperature of a viewed scene obtained by an IR camera. The microbolometer is designed with a low thermal mass of 1.65/spl times/10/sup -9/ J/K and a low thermal conductance of 2.94/spl times/10/sup -7/ W/K to maximize the responsivity R/sub v/ to a value as high as 5.91/spl times/10/sup 4/ W/K and detectivity D/sup */ to a value as high as 2.34/spl times/10/sup 9/ cm Hz/sup 1/2//W at 30 Hz. The corresponding thermal time constant is equal to 5.62 ms. Hence, these detectors could be used for 30-Hz frame rate applications. The extrapolated noise equivalent temperature difference is 2.34 mK for the 8-12 /spl mu/m window and 23 mK for the 3-5 /spl mu/m window. The calculated absorption coefficients in the medium and long IR wavelength windows before color mixing are 66.7% and 83.7%. However, when the color signals are summed at the output channel, the average achieved absorption was 75%.     

Modeling plastic deformation effects in steel on hysteresis loops with the same maximum flux density

Plastic deformation affects the hysteretic magnetic properties of steels because it changes the dislocation density, which affects domain-wall movement and pinning, and also because it places the specimen under residual strain. An earlier paper proposed a model for computing hysteresis loops on the basis of the effect of grain size d and dislocation density /spl zeta//sub d/. In that paper, hysteresis loops were compared that all had the same maximum flux density B/sub max/. The result was that coercivity H/sub c/ exhibited a linear relationship with inverse grain size (1/d) and /spl zeta//sub d//sup 1/2/. The same was true of hysteresis loss W/sub H/. If one compared hysteresis loops all with the same H/sub max/, these linear dependences were only approximately found. Because the relationships are simpler for loops of constant B/sub max/, core loss experimenters compare loops that all have the same B/sub max/. In this paper, we modify the model to study the effect of plastic tensile deformation on hysteresis loops with the same B/sub max/. We found linear relationships between H/sub c/ and residual plastic strain /spl epsiv//sub r/ and between W/sub H/ and /spl epsiv//sub r/. With increasing residual tensile strain, H/sub c/ increases (whereas with increasing elastic tensile strain, H/sub c/ decreases). Also, with increasing residual tensile strain, the slope of the hysteresis loop decreases (whereas with increasing elastic tensile strain, the slope increases). We also consider the effect of compressive plastic deformation.     

Microstructure and magnetic properties of Ti/CoCrPt/Ti pseudo-sandwich nanogranular films

We prepared Ti/CoCrPt/Ti pseudo-sandwich granular films by radio-frequency and dc magnetron sputtering onto glass substrates and subsequent in situ annealing. We investigated the microstructure and magnetic properties of the films as a function of Ti overlayer thickness (x). X-ray diffraction profiles show that the CoCrPt magnetic layers are formed as the hexagonal close-packed (HCP) structure. Vibrating sample magnetometer measurements indicate that the out-of-plane coercivity reaches the maximum 1675.5 Oe when x=5 nm. Atomic force microscopy images show the minimum average grain size D=7.2 nm and the average roughness R/sub a/=1.0 nm. Magnetic force microscopy images show that the minimum average magnetic cluster size is about 6.4 nm at x=5 nm.     

Influence of AC magnetic field amplitude on the surface magnetoimpedance tensor in amorphous wire with helical magnetic anisotropy

We have performed experimental and theoretical studies on the influence of ac magnetic field amplitude on the magnetoimpedance tensor in an amorphous wire with helical magnetic anisotropy. For the experimental measurements, we used an amorphous wire of composition (Co/sub 0.94/Fe/sub 0.06/)/sub 72.5/Si/sub 12.5/B/sub 15/ with negative, nearly zero magnetostriction constant, excited either by an ac circular h/sub /spl phi// or by an axial h/sub z/ magnetic field created by an ac electric current. We changed the ac current amplitude from 7.5 to 40 mA and the current frequency f from 1.5 to 20 MHz. The values of the asymmetric giant magnetoimpedance ratio associated with the sweeping direction of the dc field H/sub ex/ and the corresponding sensitivity were 211% and 0.64 V/Oe, respectively, for an ac current of 37.5 mA at 3 MHz. For the theoretical study based on the magnetization rotation, we obtained the second-order harmonic of the ac magnetization m/spl I.oarr//sup (2)/ induced by the relatively high ac magnetic field by solving the Landau-Lifshitz-Gilbert (LLG) equation. We also considered a second-order surface impedance tensor /spl sigmav//spl circ//sup (2)/, which allowed us to analyze quantitatively the influence of the ac magnetic field amplitude on the impedance tensor of the wire. We obtained the domain model of the wire with helical magnetic anisotropy having multidomains and the magnetization vector /spl plusmn/M/sub 0/ directed in the easy direction, and the corresponding static magnetic configurations, by solving the static LLG equation. For the given magnetic configurations, we calculated the second-order impedance tensor /spl sigmav//spl circ//sup (2)/. The results can well explain the irregular field characteristics of the voltage responses at low dc field value, when the wire was excited at high frequency and at large ac magnetic field.     

Inspection of intrinsic critical currents for spin-transfer magnetization switching

We examined the relationships between critical current, I/sub c/, and switching time, /spl tau//sub p/, for spin-transfer switching in two regions: (region I) /spl tau//sub p//spl Gt//spl tau//sub 0/, where thermal switching is accompanied and (region II) /spl tau//sub p/< several tens times /spl tau//sub 0/, where /spl tau//sub 0/ is the attempt time for thermal switching (/spl ap/1 ns). We estimated I/sub c0/, defined as the intrinsic I/sub c/ at 0 K, for both regions and confirmed experimentally that those I/sub c0/ coincided with each other at room temperature (RT). The value of I/sub c/ at /spl tau//sub p/=1 ns, measured with microwaves, was approximately 1.6 times the I/sub c0/. This suggested that we use at least two times I/sub c0/ as the writing currents of magnetic memory devices for nsec spin-transfer switching at RT. Although I/sub c0/ for both regions were defined as I/sub c/ at 0 K (I/sub c//sup 0K/) in theory, they showed temperature dependence at low temperatures; |I/sub c0/| for region I increased with decreasing temperature, and the estimated I/sub c//sup 0K/ was approximately three times I/sub c0/ for RT. This temperature dependence was quite different from that for region II.     

Demagnetizing factors for rectangular prisms

For rectangular prisms of dimensions 2a/spl times/2b/spl times/2c with constant material susceptibility /spl chi/, we have calculated and tabulated the fluxmetric and magnetometric demagnetizing factors N/sub f/ and N/sub m/, defined along the 2c dimension as functions of c/(ab)/sup 1/2/(=1/spl sim/500), a/b(=1/spl sim/256), and /spl chi/(=0/spl sim/10/sup 9/). We introduce an interpolation technique for obtaining N/sub f,m/ with arbitrary values of c/(ab)/sup 1/2/, a/b, and /spl chi/.     

Differential forms of the Kramers-Krönig dispersion relations

Differential forms of the Kramers-Kronig dispersion relations provide an alternative to the integral Kramers-Kronig dispersion relations for comparison with finite-bandwidth experimental data. The differential forms of the Kramers-Kronig relations are developed in the context of tempered distributions. Results are illustrated for media with attenuation obeying an arbitrary frequency power law (/spl alpha/(/spl omega/) = /spl alpha//sub 0/ + /spl alpha//sub 1/ |/spl omega/|/sup y/). Dispersion predictions using the differential dispersion relations are compared to the measured dispersion for a series of specimens (two polymers, an egg yolk, and two liquids) exhibiting attenuation obeying a frequency power law (1.00 /spl les/ y /spl les/ 1.99), with very good agreement found. For this form of ultrasonic attenuation, the differential Kramers-Kronig dispersion prediction is found to be identical to the (integral) Kramers-Kronig dispersion prediction.     

Characterization and microwave absorbing properties of Nd-Fe-Ti intermetallic compounds derived from Nd-Fe-B sintered magnet scraps

Nd-Fe-Ti intermetallic compounds were prepared from rare earth sintered magnet scrap powders (Nd/sub 2/Fe/sub 14/B sludge) and Ti by arc-melting and solidification processes. The resulting alloy ingots were ground into fine powders and some of them were heated at 100/spl deg/C-250/spl deg/C for 1-12 h in air. The epoxy resin composites with 83 wt% of these powders showed good microwave absorption properties at gigahertz range, and the maximum absorption peak of -39.4 dB was observed at 12.3 GHz after heating at 250/spl deg/C for 3 h in air. Compared to Fe-Ti intermetallic compound powders prepared from fresh metals of Fe and Ti, the sludge-derived Nd-Fe-Ti powders showed higher oxidation resistivity due to the preferential oxidation of Nd content.     

The comparative effect of two different annealing temperatures and times on the sensitivity and long-term stability of WO/sub 3/ thin films for detecting NO/sub 2/

We have deposited 150-nm-thick WO/sub 3/ films on Si/sub 3/N/sub 4//Si substrates provided with platinum interdigital electrodes and annealed in static air at 300/spl deg/C and 500/spl deg/C temperatures for 24 h and 200 h. The morphology, crystalline phase, and chemical composition of the films have been characterized using AFM, grazing incidence XRD and high resolution XPS techniques. The sensor resistance response curve has been obtained in the 0.2 -4 ppm NO/sub 2/ gas concentration range in humid air (50% relative humidity), varying the operating temperature between 25 and 250/spl deg/C. By plotting both sensor resistance and gas concentration logarithmically, the response is linear over the investigated dynamic range. Sensor sensitivities, here defined as the ratio of sensor resistance in gas to that in air (i.e., S=R/sub Gas//R/sub Air/), have been compared at a given NO/sub 2/ gas concentration (0.2 ppm). The long-term stability properties have been evaluated by recording film sensitivity for 1 yr under standardized test conditions. Increasing the annealing temperature from 300 to 500/spl deg/C causes the sensitivities to decrease. The 300/24h film is shown to be the most sensitive at S=233, but with poor long-term stability properties. The 300/200h film with S=32 is stable over the examined period. The 500/24 and the 500/200 films are shown to be less sensitive with S=16 and S=14, respectively. The longer the annealing time and the higher the temperature, the poorer the sensitivity, but with positive effects upon the long-term stability of the electrical response. The influence of the annealing conditions on sensitivity and long-term stability has been correlated with the concentration of surface defects, like reduced WO/sub 3/ phase (i.e., W/sup 4+/), which resulted in a strong effect on the sensors' response.