Influence of Au capping Layer on spin accumulation in a lateral spin-valve structure

We investigate the influence of Au capping layer on the spin accumulation in a lateral spin valve consisting of Permalloy and Cu wires. The nonlocal spin valve measurements show that the Au capping significantly suppresses the spin accumulation in the Cu wire, although it improves the electrical conductivity. This is understood as a result of the small spin-flip resistance of Au whereby absorbed spins are successively flipped.     

Electrical Detection of Spin Precession in Freely Suspended Graphene Spin Valves on Cross‐Linked Poly(methyl methacrylate)

Spin injection and detection is achieved in freely suspended graphene using cobalt electrodes and a nonlocal spin‐valve geometry. The devices are fabricated with a single electron‐beam‐resist poly(methyl methacrylate) process that minimizes both the fabrication steps and the number of (aggressive) chemicals used, greatly reducing contamination and increasing the yield of high‐quality, mechanically stable devices. As‐grown devices can present mobilities exceeding 10⁴ cm² V^?1 s^?1 at room temperature and, because the contacts deposited on graphene are only exposed to acetone and isopropanol, the method is compatible with almost any contacting material. Spin accumulation and spin precession are studied in these nonlocal spin valves. Fitting of Hanle spin precession data in bilayer and multilayer graphene yields a spin relaxation time of ～125‐250 ps and a spin diffusion length of 1.7‐1.9 μm at room temperature.     

Field dependence of switching currents in an exchange biased spin valve

Current induced magnetic reversal due to spin transfer torque is a promising candidate in advanced information storage technology. It has been intensively studied. This work reports the field-dependence of switching-currents for current induced magnetization switching in a uncoupled nano-sized cobalt-based spin valve of exchange biased type. The dependency is investigated in hysteretic regime at room temperature, in comparison with that of a trilayer simple spin valve. In the simple spin valve, the switching currents behave to the positive and the negative applied magnetic field symmetrically. In the exchange biased type, in contrast, the switching currents respond to the negative field in a quite unusual and different manner than to the positive field. A negative magnetic field then can shift the switching-currents into either negative or positive current range, dependently on whether a parallel or an antiparallel state of the spin valve was produced by that field. This different character of switching currents in the negative field range can be explained by the effect of the exchange bias pinning field on the spin-polarizer (the fixed Co layer) of the exchange biased spin valve. That unidirectional pinning filed could suppress the thermal magnetization fluctuation in the spin-polarizer, leading to a higher spin polarization of the current, and hence a lower switching current density than in the simple spin valve.     

Intrinsic Spin Relaxation Processes in Metallic Magnetic Multilayers

Spin relaxation processes in metallic magnetic nanostructures are reviewed. First a brief review of the phenomenology of magnetic damping is presented using the Landau Lifshitz Gilbert (LLG) equations of motion. It is shown that the Gilbert damping in bulk metallic layers is caused by the spin orbit interaction and itinerant character of 3d and 4s-p electrons. Spin dynamics in magnetic nanostructures acquires an additional nonlocal damping. This means that a part of the magnetic damping is not given by the local Gilbert damping but arises from the proximity to other layers. Spin pumping and spin sink concepts will be introduced and used to describe the interface nonlocal Gilbert damping in magnetic multilayers. The modified LLG equation of motion in magnetic multilayers will be introduced and tested against the ferromagnetic resonance (FMR) data around the accidental crossover of FMR fields. The spin pumping theory will be compared to the early theories introduced in the 1970s for the interpretation of transmission electron spin resonance (TESR) measurements across ferromagnet/normal metal sandwiches.     

Investigations on the Magnetization Switching Dynamics in Spin Valve Multilayers Under Periodic Applied Magnetic Field

Magnetization switching dynamics in a spin valve nanopillar, induced by spin transfer torque in the presence of a periodic applied field is investigated by solving the Landau–Lifshitz–Gilbert–Slonczewski equation. Under steady state conditions, the switching of magnetization occurs in the system, above a threshold current density value J _c. A general expression for the critical current density is derived and it is shown that this further reduces when there is magnetic interface anisotropy present in the free layer of the spin valve. We also investigated the chaotic behavior of the free layer magnetization vector in a periodically varying applied magnetic field, in the presence of a constant DC magnetic field and spin current. Further, it is found that in the presence of a nonzero interfacial anisotropy, chaotic behavior is observed even at much smaller values of the spin current and DC applied field.     

Template-grown NiFe/Cu/NiFe nanowires for spin transfer devices

We have developed a new reliable method combining template synthesis and nanolithography-based contacting technique to elaborate current perpendicular-to-plane giant magnetoresistance spin valve nanowires, which are very promising for the exploration of electrical spin transfer phenomena. The method allows the electrical connection of one single nanowire in a large assembly of wires embedded in anodic porous alumina supported on Si substrate with diameters and periodicities to be controllable to a large extent. Both magnetic excitations and switching phenomena driven by a spin-polarized current were clearly demonstrated in our electrodeposited NiFe/Cu/ NiFe trilayer nanowires. This novel approach promises to be of strong interest for subsequent fabrication of phase-locked arrays of spin transfer nano-oscillators with increased output power for microwave applications.     

Enhancing Light Emission in Interface Engineered Spin‐OLEDs through Spin‐Polarized Injection at High Voltages

The quest for a spin‐polarized organic light‐emitting diode (spin‐OLED) is a common goal in the emerging fields of molecular electronics and spintronics. In this device, two ferromagnetic (FM) electrodes are used to enhance the electroluminescence intensity of the OLED through a magnetic control of the spin polarization of the injected carriers. The major difficulty is that the driving voltage of an OLED device exceeds a few volts, while spin injection in organic materials is only efficient at low voltages. The fabrication of a spin‐OLED that uses a conjugated polymer as bipolar spin collector layer and ferromagnetic electrodes is reported here. Through a careful engineering of the organic/inorganic interfaces, it is succeeded in obtaining a light‐emitting device showing spin‐valve effects at high voltages (up to 14 V). This allows the detection of a magneto‐electroluminescence (MEL) enhancement on the order of a 2.4% at 9 V for the antiparallel (AP) configuration of the magnetic electrodes. This observation provides evidence for the long‐standing fundamental issue of injecting spins from magnetic electrodes into the frontier levels of a molecular semiconductor. The finding opens the way for the design of multifunctional devices coupling the light and the spin degrees of freedom.     

Deterministic Magnetization Switching Using Lateral Spin–Orbit Torque

Current-induced magnetization switching by spin–orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin–orbit torques has relied on an external injection of out-of-plane spin currents into the magnetic layer, while an external magnetic field along the electric current direction is generally required for realizing deterministic switching by SOT. Here, deterministic current-induced SOT full magnetization switching by lateral spin–orbit torque in zero external magnetic field is reported. The Pt/Co/Pt magnetic structure is locally annealed by a laser track along the in-plane current direction, resulting in a lateral Pt gradient within the ferromagnetic layer, as confirmed by microstructure and chemical composition analysis. In zero magnetic field, the direction of the deterministic current-induced magnetization switching depends on the location of the laser track, but shows no dependence on the net polarization of external out-of-plane spin currents. From the behavior under external magnetic fields, two independent mechanisms giving rise to SOT are identified, i.e., the lateral Pt–Co asymmetry as well as out-of-plane injected spin currents, where the polarization and the magnitude of the SOT in the former case depends on the relative location and the laser power of the annealing track.     

Creation of Nonlocal Spin-Entangled Electrons via Andreev Tunneling, Coulomb Blockade, and Resonant Transport

We discuss several scenarios for the creation of nonlocal spin-entangled electrons which provide a source of electronic Einstein–Podolsky–Rosen (EPR) pairs. Such EPR pairs can be used to test nonlocality of electrons in solid state systems, and they form the basic resources for quantum information processing. The central idea is to exploit the spin correlations naturally present in superconductors in form of Cooper pairs possessing spin-singlet wavefunctions. We show that nonlocal spin-entanglement in form of an effective Heisenberg spin interaction is induced between electron spins residing on two quantum dots with no direct coupling between them, but each of them being tunnel-coupled to the same superconductor. We then discuss a nonequilibrium setup with an applied bias where mobile and nonlocal spin-entanglement can be created by coherent injection of two electrons, in a pair (Andreev) tunneling process, into two spatially separated quantum dots and subsequently into two Fermi liquid leads. The current for injecting two spin-entangled electrons into different leads shows a resonance and allows the injection of electrons at the same orbital energy, which is a crucial requirement for the detection of spin-entanglement via the current noise. On the other hand, tunneling via the same dot into the same lead is suppressed by the Coulomb blockade effect of the quantum dots. We discuss Aharonov–Bohm oscillations in the current and show that they contain h/e and h/2e periods, which provides an experimental means to test the nonlocality of the entangled pair. Finally, we discuss a structure consisting of a superconductor weakly coupled to two separate one-dimensional leads with Luttinger liquid properties. We show that strong correlations again suppress the coherent subsequent tunneling of two electrons into the same lead, thus generating again nonlocal spin-entangled electrons in the Luttinger liquid leads.     

基于非晶软磁层的巨磁电阻单元性能研究

采用剥离工艺制备了单元大小为10μm×18μm的CoNbZr/Co/Cu/Co和NiFe/Co/Cu/Co多层膜结构的3×3自旋阀单元阵列,并测试了自旋阀单元的静态和动态巨磁电阻特性.结果表明CoNbZr层对快速磁场变化具有良好的线性响应特性.与NiFe/Co/Cu/Co自旋阀单元相比,微米尺度的CoNbZr/Co/Cu/Co自旋阀单元具有更良好的自旋电子特性,可以应用到包括MRAM器件在内的自旋电子器件中.     

RIE对巨磁电阻自旋阀磁性能的影响

对巨磁电阻自旋阀磁场传感器制作中的关键技术之一：自旋阀薄膜的反应离子刻蚀(RIE)工艺,进行了试验研究。自旋阀结构为：Ta(3．5nm)／Cu(0．7nm)／NiFe(4．5nm)／CoFe(1nm)／Cu(3nm)／CoFe(2nm)／Ru(0．7nm)／CoFe(2nm)／MnIr(8nm)／Ta(4nm),刻蚀气体为氢氯碳氟化合物(HCFC：Hydro—chloro—fluoro—carbon),气体流量为10．5seem,RF功率为180W,时间为27min。结果表明：RIE技术可以加工出理想的巨磁电阻自旋阀薄膜图形,且加工过程对自旋阀的磁性能影响不大,这些结果对于巨磁电阻自旋阀型集成磁传感器的批量制作具有积极意义。     

Channel Width Dependence of Spin Polarized Transports in NiFe/InGaAs Hybrid Two-Terminal Structures

We investigated spin polarized transports in NiFe/InGaAs hybrid two-terminal structures at 1.5K as well as their channel width dependence. The two-terminal structures were fabricated in order to neglect the local Hall effect (LHE) by fringe fields of NiFe contacts. First, we measured magneto-resistance (MR) characteristics of the samples under vertical magnetic fields, and obtained clear oscillations indicating the ohmic formation at NiFe/InGaAs interfaces. Next, we measured spin valve (SV) properties under parallel magnetic fields, and successfully observed clear SV peaks without LHE hysterisis loops. Furthermore, we also confirmed unique behavior of SV peaks depending on the channel width. Such dependence also indicates spin injection/detection through NiFe/InGaAs interfaces.     

Spin-transfer torque in nanoscale magnetic devices

We discuss recent highlights from research at Cornell University, Ithaca, New York, regarding the use of spin-transfer torques to control magnetic moments in nanoscale ferromagnetic devices. We highlight progress on reducing the critical currents necessary to produce spin-torque-driven magnetic switching, quantitative measurements of the magnitude and direction of the spin torque in magnetic tunnel junctions, and single-shot measurements of the magnetic dynamics generated during thermally assisted spin-torque switching.     

New rotary valves for pulse-tube refrigerators

In most used rotary valves in GM-type pulse-tube refrigerators the rotor makes heavy mechanical contact with the stator, so the valve is liable to wear, and large torques are needed. In this paper we will describe two types of valves, which have balanced forces on the rotor. In the first valve the rotor and the stator make no mechanical contact. The second type is a contact valve, like the classical valves, but the forces on the rotor are balanced in a different way. Therefore, these valves are less liable to wear, and the torques needed to rotate the valves are small.     

Bulk Spin Torque-Driven Perpendicular Magnetization Switching in L10 FePt Single Layer

Due to its inherent superior perpendicular magnetocrystalline anisotropy, the FePt in L1₀ phase enables magnetic storage and memory devices with ultrahigh capacity. However, reversing the FePt magnetic state, and therefore encoding information, has proven to be extremely difficult. Here, it is demonstrated that an electric current can exert a large spin torque on an L1₀ FePt magnet, ultimately leading to reversible magnetization switching. The spin torque monotonically increases with increasing FePt thickness, exhibiting a bulk characteristic. Meanwhile, the spin torque effective fields and switching efficiency increase as the FePt approaches higher chemical ordering with stronger spin–orbit coupling. The symmetry breaking that generates spin torque within L1₀ FePt is shown to arise from an inherent structural gradient along the film normal direction. By artificially reversing the structural gradient, an opposite spin torque effect in L1₀ FePt is demonstrated. At last, the role of the disorder gradient in generating a substantial torque in a single ferromagnet is supported by theoretical calculations. These results will push forward the frontier of material systems for generating spin torques and will have a transformative impact on magnetic storage and spin memory devices with simple architecture, ultrahigh density, and readily application.     

Spin Valve Effect of 2D‐Materials Based Magnetic Junctions

The magnetotransport properties of spin valve structure are highly influenced by the type of intervening layer inserted between the ferromagnetic electrodes. In this scenario, spin filtering effect at the interfaces plays a crucial role in determining the magnetoresistance (MR) of such magnetic structures, which can be enhanced by using a suitable intervening layer. Here, the authors investigate the spin filtering effect of the two‐dimensional layers such as hexagonal boron nitride (hBN), graphene (Gr), and Gr‐hBN hybrid system for modifying the magnetotransport characteristics of the vertical spin valve architectures (Ni/hBN/Ni, Ni/Gr/Ni, and Ni/Gr‐hBN/Ni). Compared to graphene, hBN incorporated magnetic junction reveals higher MR and spin polarizations (P) suggesting better spin filtering at the interfaces. The MR for hBN incorporated junction is calculated to be ≈0.83%, while that of graphene junction it is estimated to be ≈0.16%. Similar contrast is observed in the ‘P’ of ferromagnets (FMs) for the two junctions, that is, ≈6.4% for hBN based magnetic junction and ≈2.8% for graphene device. However, for Gr‐hBN device, the signal not only get inverts, but it also suggests efficient spin filtering mechanism at the FM interfaces. Their results can be useful to comprehend the origin of spin filtering and the choice of non‐magnetic spacer for magnetotransport characteristics.

     

Spin-wave interference patterns created by spin-torque nano-oscillators for memory and computation

Magnetization dynamics in nanomagnets has attracted broad interest since it was predicted that a dc current flowing through a thin magnetic layer can create spin-wave excitations. These excitations are due to spin momentum transfer, a transfer of spin angular momentum between conduction electrons and the background magnetization, that enables new types of information processing. Here we show how arrays of spin-torque nano-oscillators can create propagating spin-wave interference patterns of use for memory and computation. Memristic transponders distributed on the thin film respond to threshold tunnel magnetoresistance values, thereby allowing spin-wave detection and creating new excitation patterns. We show how groups of transponders create resonant (reverberating) spin-wave interference patterns that may be used for polychronous wave computation and information storage.     

Magnetic properties of molecular systems: A nonlocal spin density functional study

A new class of molecular magnets based on aniline and aminonaphthalene sulfonic acid was previously reported. In the present work, a nonlocal density functional theory study was performed on simple molecular models, to determine the mechanism that stabilizes the parallel alignment of the spin component. The role played by transition metals on the magnetic properties of this kind of systems was also studied within this approximation. The results obtained show a high sensitivity of the magnetic coupling on the molecular geometry as well as on the nature and oxidation state of the metallic atom.     

Optical spin generation/detection and spin transport lifetimes

We generate electron spins in semiconductors by optical pumping. The detection of them is also performed by optical technique using time-resolved pump-probe photoluminescence polarization measurements in the presence of an external magnetic field perpendicular to the generated spin. The spin polarization in dependences of the pulse length, pump-probe delay and external magnetic field is studied. From the dependence of spin-polarization on the delay of the probe, the electronic spin transport lifetimes and the spin relaxation frequencies as a function of the strength of the magnetic field are estimated. The results are discussed based on hyperfine effects for interacting electrons.     

Atomic-scale magnetometry of distant nuclear spin clusters via nitrogen-vacancy spin in diamond

The detection of single nuclear spins is an important goal in magnetic resonance spectroscopy. Optically detected magnetic resonance can detect single nuclear spins that are strongly coupled to an electron spin, but the detection of distant nuclear spins that are only weakly coupled to the electron spin has not been considered feasible. Here, using the nitrogen-vacancy centre in diamond as a model system, we numerically demonstrate that it is possible to detect two or more distant nuclear spins that are weakly coupled to a centre electron spin if these nuclear spins are strongly bonded to each other in a cluster. This cluster will stand out from other nuclear spins by virtue of characteristic oscillations imprinted onto the electron spin decoherence profile, which become pronounced under dynamical decoupling control. Under many-pulse dynamical decoupling, the centre electron spin coherence can be used to measure nuclear magnetic resonances of single molecules. This atomic-scale magnetometry should improve the performance of magnetic resonance spectroscopy for applications in chemical, biological, medical and materials research, and could also have applications in solid-state quantum computing.