Structural and Electrical Properties of Epitaxial La2/3Ca1/3MnO3/La1/3Ca2/3MnO3/YBa2Cu3O7?δ Trilayers

Trilayers made of perovskite-type ferromagnetic?(F), antiferromagnetic?(AF) and superconducting?(S) films were fabricated and their microstructural properties studied. Epitaxially strained La_2/3Ca_1/3MnO₃/La_1/3Ca_2/3MnO₃/YBa₂Cu₃O_7??? (F/AF/S) trilayers were grown in situ by dc-sputtering technique onto (001)-oriented SrTiO₃ (STO) substrates. Whereas the thickness of the bottom?(F) and top?(S) layer was fixed to 74?nm and 100?nm, respectively, that of the intermediate AF layer was varied between ??4?nm and ??9?nm. The crystalline quality of the samples was checked by X-Ray diffraction (XRD) analysis. The ???C2?? scans and reciprocal space maps at (002) and (013) Bragg reflections provided clear evidence for the heteroepitaxial growth of the trilayers as well as for the absence of secondary phases. Due to high epitaxiality of the trilayers, their magnetic response was already shown to develop an excellent magnetic anisotropy to clearly visualize the superconducting diamagnetism and ferromagnetic behavior at a same temperature. The superconducting diamagnetic response at 5?K has now been used to calculate the superconducting current density of the S layer as a function of an applied magnetic field. The results confirmed the uncoupling role of the AF layer. The presence of well defined AF barriers (La_1/3Ca_2/3MnO₃) in the trilayers was also evidenced by recording the I?CV characteristic in cross configuration, which showed an anisotropic behavior as well. The results achieved suggest that such oxide heterostructures could play an important role in the search for novel devices based on magnetic junctions.     

(La2/3Ca1/3)(Mn(3-x)/3Fex/3)O3体系磁电阻行为的研究

通过系统地测量(La     

Dielectric Relaxation and Conductivity of Ba(Mg1/3Ta2/3)O3and Ba(Zn1/3Ta2/3)O3

The frequency dependent dielectric properties of barium magnesium tantalate(BMT),Ba(Mg_(1/3)Ta(2/3))O_3 and barium zinc tantalate(BZT),Ba(Zn_(1/3)Ta_(2/3))O_3 synthesized by solid state reaction technique have been investigated at various temperatures by impedance spectroscopy.BMT and BZT possess cubic structure with lattice parameter a = 0.708 and 0.451 nm,respectively.The resonance peaks due to dielectric relaxation processes are observed in the loss tangent of these oxides.The relaxation in the samples is polydispersive in nature.The temperature dependence of dc conductivity,the most probable relaxation frequency(ω_m) obtained from tanδ vs logw plots and ω_m obtained from imaginary parts of the complex electrical modulus vs logw plots follow the Arrhenius behavior.According to these Arrhenius plots the activation energies of BMT and BZT are about 0.54 and 0.40 eV,respectively.Thus the results indicate that samples are semiconducting in nature.The frequency-dependent electrical data are analyzed in the framework of conductivity and electric modulus formalisms.Both these formalisms show qualitative similarities in relaxation time.Our study points that for complex perovskite oxides with general formula A(B'B")O_3,the dielectric properties significantly depend on the atomic radii of both A and B type cations.BMT and BZT exhibit enhancement in dielectric property compared to their niobate counterparts.They may find several technological applications such as in capacitors,resonators and filters owing to their high dielectric constant and low loss tangent.     

(La2/3Ca1/3)(Mn(3-x)/3)Fex/3)O3体系磁电阻行为的研究

通过系统地测量（La2/3Ca1/3）（Mn（3-x）／3Fex／3）O3（x＝0、0.1、0．2、0．3的体系样品的电阻率-温度关系以及一定温度下磁电阻率与磁场的关系,发现随x的变化其磁电阻率峰和电阻率峰均发生位移,磁电阻率峰值增大,并伴生磁电阻率峰展宽效应．作者认为由于Fe的替代,引起体系中Mn3 ／Mn4 比率及磁矩的变化,加之外场对磁有序结构的调制作用,从而影响了Mn3 －O－Mn4 的双交换作用,最终导致磁电阻行为发生变化．     

Li0.5La0.5TiO3包覆LiNil/3Co1/3Mnl/3O2材料的研究

以Li0.5La0.5TiO3为包覆物,制备了固体电解质包覆的LiNil/3Co1/3Mnl/3O2正极材料。采用XRD、SEM对材料进行了表征:XRD显示未包覆的材料具有α-NaFeO2层状结构,粒径在200～300nm之间,包覆后材料粒径略有增大,包覆层具有ABO3型固体电解质结构。包覆层的致密程度及材料的循环稳定性与热处理温度有关。包覆后400℃热处理得到的材料首次放电比容量为185mAh/g,较未包覆材料容量有所提高,50次循环后其容量仍能达到156.5mAh/g,表明包覆物Li0.5La0.5TiO3对LiNil/3Co1/3Mnl/3O2具有保护作用。     

Pr2/3Sr1/3MnO3薄膜外场诱导自旋输运特性

采用脉冲激光沉积法制备了稀土掺杂钙钛矿锰氧化物Pr2/3Sr1/3MnO3(PSMO)外延薄膜,研究了薄膜在磁场、激光和电流作用下的自旋输运特性.在低温铁磁金属相,激光作用使薄膜的电阻增大,而磁场和电流则诱导电阻减小;在高温顺磁绝缘态,外场诱导均使电阻减小.在铁磁金属相,外场诱导输运特性的变化可归结于外场对体系电子自旋系统的影响:磁场和电流加强材料中eg电子和t2g局域电子间的自旋平行,增强了双交换作用;激光作用可产生光致退磁效应,减弱双交换作用.在顺磁绝缘态,场致电阻降低源于外场致使小极化子的退局域化效应.     

Al3+掺杂0.5Li2MnO3-0.5LiCo1/3Ni1/3Mn1/3O2正极材料的研究

采用聚合热解法制备了掺入3%Al3+的富锂锰基Li[Li0.2Co0.13Ni0.13Mn0.51Al0.03]O2材料,经过X射线衍射(XRD)、扫描电镜(SEM)实验表明,掺入3%Al3+样品仍然保持层状结构,没有观察到杂质相的存在。在2.0~4.8 V范围内进行恒流充放电测试表明,掺Al3+样品在30 mA/g的电流密度下,首周充放电比容量可达349.1和303.8 mAh/g(首次库仑效率87%);在100 mA/g的电流密度下,100次循环后,容量保持率为91.7%,显示出高的循环稳定性。这些结果表明掺杂Al3+能够在一定程度上提高富锂氧化物材料层状结构的稳定性,为发展高容量和高稳定性正极材料提供一种新途径。     

Correlation Between Ferromagnetism and Superconductivity at Interfaces of La2/3Ca1/3MnO3/YBa2Cu3O7−δ /La2/3Ca1/3MnO3 Trilayers Grown by dc Sputtering

In this work, we study the magnetoelectrical properties of La_2/3Ca_1/3MnO₃/YBa₂Cu₃O_7?δ /La_2/3Ca_1/3MnO₃ heterostructures grown by means of high oxygen-pressure dc sputtering onto (001)-oriented SrTiO₃ substrates. The test heterostructures are composed of ferromagnetic layers of constant thicknesses (～280 unit cells, ～110 nm) and superconducting interlayers with thicknesses ranging between 5 (～6 nm) and 15 unit cells (～17 nm). Transport measurements show a strong suppression of the superconducting properties when the thickness of the YBa₂Cu₃O_7?δ interlayer is reduced to a value below 10 unit cells. Magnetic measurements show superconducting transition in junctions with YBa₂Cu₃O_7?δ interlayers with thicknesses larger than ～15 unit cells. The observed difference in the values of the superconductivity onset when determined by electrical and magnetic measurements might be related with the presence of a spontaneous vortex phase in the temperature range around the superconducting transition.     

双掺杂稀土锰氧化物La2/3(Ca1/3Sr2/3)1/3MnO3薄膜的输运特性

采用射频磁控溅射法制备了Ca、Sr双掺杂La2/3(Ca1/3Sr2/3)1/3MnO3(LCSMO)薄膜。电阻率-温度特性表明,薄膜在387K时发生铁磁金属相-顺磁非导体相相变。同时测试了薄膜在180,230和280K温度下的伏安特性．表明所制备的薄膜具有自阻效应,并分析了产生该现象的原因。     

纳米Al2O3掺杂对LiNi1/3Co1/3Mn1/3O2性能的影响

为提高LiNi1/3Co1/3Mn1/3O2正极材料的循环性能和倍率性能,采用在底液中添加纳米Al2O3的方法,在氢氧化物共沉淀法制备前驱体过程中进行铝元素掺杂,并考察了铝掺杂量对材料形貌和电化学性能的影响。电化学性能测试结果表明,当铝掺杂量为0.02(n Al:∶n Li=0.02)时,在电压范围2.7~4.2V和0.2C倍率下,循环50次后容量保持率高达95.7%,高于未掺杂的81.5%,同时材料的倍率性能也明显提高。     

合成方法对LiNil/3Co1/3Mn1/3O2电化学性能的影响

采用碳酸盐共沉淀法、草酸盐共沉淀法、溶胶-凝胶法、高温固相法、氢氧化物共沉淀法(pH=10、11、12)制得LiNil/3Co1/3Mn1/3O2正极材料,通过X射线衍射(XRD)、扫描电镜(SEM)和电化学性能测试对样品的结构和性能进行了表征。结果表明,溶胶-凝胶法合成的样品层状结构较完整,阳离子混排程度低,粒径相对较小,颗粒分布均匀;该样品首次放电比容量较高为151mAh·g-1,循环30次后容量保持率达到93.31%。     

多铁性BaTiO3/La2/3Sr1/3MnO3复合薄膜的制备及其强磁电效应的研究

使用脉冲激光沉积技术,在(001)取向的LaAlO3(LAO)单晶基片上外延生长了BaTiO3/La2/3Sr1/3MnO3(BTO/LSMO)双层复合薄膜.电学和磁学性能的研究显示复合薄膜具有较低的相对介电常数(εr=263),优良的铁电和铁磁性能以及高于室温的铁磁居里温度(Tc=317 K).复合薄膜的磁电电压系数(αE)为176 mV/A,高于同类结构磁电系统一个数量级,相应的界面耦合系数k值为0.68,表明铁磁层和铁电层界面之间存在较大程度的耦合.     

Al2O3膜表面包覆LiNi1/3Co1/3Mn1/3O2的微观结构和电化学特性

采用液相浸渍法在球形颗粒LiNi1／3Co1／2Mn1／3O2的表面包覆上了一层Al2O3膜．结构分析表明，表面A1203膜的厚度约100nm，具有一定的无定形结构，核体材料具有纯六方相结构．实验结果证明，表面Al2O3膜能够有效提高正极材料的耐过充能力和循环稳定性．在截止电压为3．0—4．5V，充放电倍率为1C的条件下，Al2O3表面包覆膜后正极活性物质50次循环的容量保持率提高了11．5％．     

La2/3Sr1/3MnO3/ZnO混合物薄膜的磁电阻和伏安特性研究

利用脉冲激光沉积的方法在Si（100）氧化成SiO₂的基片上制备了(La_2/3Sr_1/3MnO₃)_x/(ZnO)_1-x混合物薄膜,研究了薄膜的磁电阻和伏安特性. X射线衍射分析表明,除了衬底SiO₂的衍射峰以外,分别出现了La_2/3Sr_1/3MnO₃（101）的衍射峰和ZnO（002）的衍射峰,且它们形成了两相共存体系. 实验表明：x=0.3的混合物薄膜表现为半导体导电特性,而x=0.4的样品则出现了典型的金属绝缘相变. 所制备的样品表现出了低场磁电阻效应和非线性伏安特性. 在0.7T磁场的作用下,x=0.3的样品在温度为60K时取得的最大磁电阻值为28.8%. 通过对伏安关系拟合表明,在La_2/3Sr_1/3MnO₃和ZnO颗粒之间存在一定的耗尽层,且产生了界面缺陷态.     

微观缺陷和3d电子对La2/3Ca1/3Mn1-xFexO3陶瓷磁电阻性能的影响

用符合正电子湮没辐射Doppler展宽技术研究了La2/3Ca1/3Mn1-xFexO3陶瓷的缺陷和3d电子行为。结果表明:对x≤0.33的样品,随着样品中Fe含量的增加,3d电子数量增加,样品的商谱谱峰升高;对x>0.50的样品,随着样品中Fe含量的增加,样品中有新相生成,体系缺陷增加,样品的商谱谱峰降低。测试了La2/3Ca1/3Mn1-x-FexO3多晶陶瓷的磁电阻性能,讨论了微观缺陷和3d电子对La2/3Ca1/3Mn1-xFexO3多晶陶瓷磁电阻性能的影响。     

(La2/3Ca1/3)(Mn(3-x)/3)Fex/3)O3体系磁电阻行为的研究

通过系统地测量（La_2/3Ca_1/3）（Mn_{（3-x）／3}Fe_x／3）O₃（x＝0、0.1、0．2、0．3的体系样品的电阻率-温度关系以及一定温度下磁电阻率与磁场的关系,发现随x的变化其磁电阻率峰和电阻率峰均发生位移,磁电阻率峰值增大,并伴生磁电阻率峰展宽效应．作者认为由于Fe的替代,引起体系中Mn³⁺／Mn⁴⁺比率及磁矩的变化,加之外场对磁有序结构的调制作用,从而影响了Mn³⁺－O^－Mn⁴⁺的双交换作用,最终导致磁电阻行为发生变化．     

Pb(Zn1/3Nb2/3)O3-Ba(Zn1/3Nb2/3)O3铁电陶瓷结构与性能的研究

采用固相反应的方法系统地研究了BZN稳定PZN基陶瓷的相结构与介电性能.随着BZN含量的增加,PZN-BZN陶瓷中钙钛矿相的稳定性增强,居里温度近似呈线性下降,室温介电常数和介质损耗随也显著降低,最小值分别为380和0.002.为获得100%钙钛矿结构的PZN基陶瓷所需BZN的最小用量为8mol%～10mol%,当BZN的mol%超过15mol%时,PZN基陶瓷中钙钛矿相所占的百分比不再受烧结工艺的影响,基本保持100%.1kHz时Pb0.9Ba0.1Zn1/3Nb2/3O3陶瓷的最大介电常数Kmax=8680,tgδ=0.02,相应的居里温度Tm为24℃.     

Low-temperature sintering and piezoelectric properties of Pb(Fe2/3W1/3)O3–added Pb(Zn1/3Nb2/3)O3–Pb(Ni1/3Nb2/3)O3–Pb(Zr,Ti)O3 ceramics

Low-temperature sintering of (a–x)Pb(Zr_0.48Ti_0.52)O₃–bPb(Ni_1/3Nb_2/3) O₃–cPb(Zn_1/3Nb_2/3)O₃–xPb(Fe_2/3W_1/3)O₃ (a + b + c + x = 1, 0.06 ≤ x ≤ 0.10) ceramics were prepared through two-step synthesis process using perovskites-structured ferroelectric materials Pb(Fe_2/3W_1/3)O₃ (PFW) as a sintering aid. The effects of PFW content on the densification, microstructure, phase structure, dielectric and piezoelectric properties of the ceramics were investigated. The sintering temperature was reduced from 1,180 °C (without PFW addition) to 940 °C when the material was PFW-doped. PFW-doping increased the sintered density and the average grain size of PFW–PNN–PZN–lead zirconate titanate ceramics. The ceramics sintered at 940 °C for 4 h with x = 0.08 exhibited favorable properties, which were listed as follows: d₃₃ = 496pC/N, εT 33/ε₀ = 3,119, tanδ = 2.1 % and Curie temperature = 242 °C. These values indicated that the newly developed composition might be suitable for multilayer piezoelectric devices application.     

微波烧结LiCo1/3Ni1/3Mn1/3O2电磁场与温度场的仿真模拟

分析了微波烧结的原理和特点,利用COMSOL Multi-physics模拟软件对矩形微波炉进行了仿真模拟,研究了微波烧结正极材料LiCo_(1/3)Ni_(1/3)Mn_(1/3)O_2时电磁场与温度场的分布,测量了粉末样品LiCo_(1/3)Ni_(1/3)Mn_(1/3)O_2的介电常数,并与模拟结果相对照.研究表明:微波在烧结LiCo_(1/3)Ni_(1/3)Mn_(1/3)O_2样品时,炉腔内电磁场的分布受到影响,微波炉内表面的电场强度减弱;材料内部温度场的分布不均匀,材料的下半部分温度较高;同时,在仿真模拟计算过程中,求得LiCo_(1/3)Ni_(1/3)Mn_(1/3)O_2在微波中烧结到不同温度时的能量损耗,根据李赫德涅凯法则计算出其对应的相对介电常数,发现在20~620℃,相对介电常数随温度的上升而变大.根据实验测得的复合介电常数,求出对应温度点LiCo_(1/3)Ni_(1/3)Mn_(1/3)O_2的相对介电常数.利用Origin对仿真模拟计算和实验求得的两组相对介电常数数据进行拟合对比,发现实验求得的LiCo_(1/3)Ni_(1/3)Mn_(1/3)O_2的相对介电常数与仿真模拟计算所得数据趋势吻合.     

Magnetoelectric and electrical properties of WO3-doped (Ni0.8Zn0.1Cu0.1)Fe2O4/[Pb(Ni1/3Nb2/3)O3–Pb(Zn1/3Nb2/3)O3–PbTiO3] composites

A total of 5 mol% WO₃-doped (1−x)(Ni_0.8Zn_0.1Cu_0.1)Fe₂O₄/xPb(Ni_1/3Nb_2/3)O₃–Pb(Zn_1/3Nb_2/3)O₃–PbTiO₃ ((1−x)NZCF/xPNN-PZN-PT) magnetoelectric particulate ceramic composites were prepared by conventional solid-state reaction method via low-temperature sintering process. X-ray diffraction (XRD) measurement and scanning electron microscopy (SEM) observation indicate that piezoelectric phase and ferrite phase coexist in the sintered particulate ceramic composites. Dielectric property of the (1−x)NZCF/x0.53PNN–0.02PZN–0.05Pb(Ni_1/2W_1/2)O₃–0.40PT ((1−x)NZCF/xPNN-PZN-PNW-PT, nominal composition) composites is improved greatly as compared to that of the undoped (1−x)NZCF/xPNN-PZN-PT composites. The WO₃-doped (1−x)NZCF/xPNN-PZN-PT composites exhibit typical P–E hysteresis loops at room temperature accompanied by the decrease of saturation polarization (P _s) and remnant polarization (P _r). At the same time, piezoelectric property of the composites deteriorates greatly with the increase of ferrite content. The (1−x)NZCF/xPNN-PZN-PNW-PT composites can be electrically and magnetically poled and exhibit apparent magnetoelectric (ME) effect. A maximum ME voltage coefficient of 13.1 mV/(cm Oe) is obtained in the 0.1NZCF/0.9PNN-PZN-PNW-PT composite at 400 Oe d.c. magnetic bias field superimposed 1 kHz a.c. magnetic field with 5 Oe amplitude. The addition of WO₃ in the piezoelectric phase decreases sintering temperature greatly from 1180 °C to 950 °C and decreases dielectric loss sharply of the composites, thus the ME voltage coefficient increases. Such ceramic processing is valuable for the preparation of magnetoelectric particulate ceramic composites with excellent ME effect.