共查询到20条相似文献,搜索用时 562 毫秒
1.
铝掺杂氧化锌(AZO)废弃靶材回收再利用的研究 总被引:1,自引:1,他引:0
将AZO原料粉末和AZO残靶研磨后的粉末混合,采用注浆成型和常压大气烧结工艺制备靶材,实验主要测试了相对密度、吸水率、线收缩率和电阻率等性能,并通过XRD和SEM表征AZO靶材的晶体形态和微观结构,与新靶材进行性能对比,研究残靶粉末回收利用对靶材性能的影响。残靶粉末的加入对AZO靶材有轻微影响,测试结果显示烧结温度1450℃、保温5h、AZO残靶加入量为10%时有较好的性能:相对密度高达99.24%,吸水率和收缩率分别为17.96%和15.70%,电阻率为2.12×10-3Ω·cm。含有残靶的AZO靶材稍差的性能可能归结于AZO粉末和残靶粉末的兼容性。 相似文献
2.
3.
以ZnO(掺杂2%Al2O3)陶瓷靶作为靶材,采用离子束溅射技术在BK7玻璃基底上制备AZO透明导电薄膜。研究不同工艺参数对ZnO∶Al(AZO)薄膜结构与光电性能的影响。结果表明,不同等离子体能量下制备的AZO薄膜均出现ZnO(002)特征衍射峰,具有纤锌矿结构且c轴择优取向;AZO薄膜的结晶质量和性能对基底温度有较强的依赖性,只有在适当的基底温度下,可改善结晶程度且利于颗粒的生长,呈现较低的电阻率;不同厚度的AZO薄膜均出现较强的ZnO(002)特征衍射峰且随着厚度的增加,ZnO(110)峰强度不断加强,相应晶粒尺寸变大,但缺陷也随之增多;同时得出利用离子束溅射方法制备AZO薄膜的最佳工艺为:等离子体能量为1.3 keV、基底温度200℃和沉积厚度为420 nm,该参数下制备的薄膜结晶程度较高、生长的颗粒较大,相应薄膜的电阻率较低且薄膜透射率在可见光区均达到80%以上。 相似文献
4.
5.
6.
7.
本文采用直流磁控溅射技术在玻璃衬底上制备了AZO/Cu、Cu/AZO和AZO/Cu/AZO三种复合结构多层膜,研究了生长温度对多层膜特性的影响,发现AZO/Cu双层薄膜具有最优的光电性能,其最佳生长温度为100~150℃。文中进一步考察了生长温度对AZO/Cu双层薄膜结构性能和表面形貌的影响,结果表明:合适的生长温度有... 相似文献
8.
9.
本文采用直流磁控溅射技术在玻璃衬底上制备了AZO/Cu、Cu/AZO和AZO/Cu/AZO三种复合结构多层膜,研究了生长温度对多层膜特性的影响,发现AZO/Cu双层薄膜具有最优的光电性能,其最佳生长温度为100~150℃。文中进一步考察了生长温度对AZO/Cu双层薄膜结构性能和表面形貌的影响,结果表明:合适的生长温度有利于改善AZO/Cu双层薄膜的晶体质量,进而提高其光电性能;150℃下沉积的薄膜具有最佳品质因子1.11×10^-2Ω^-1,此时方块电阻为8.99Ω/sq,可见光透过率为80%,近红外反射率约70%。本文在较低温度下制备的AZO/Cu双层膜具有较优的透明导电性和良好的近红外反射性,可以广泛应用于镀膜玻璃、太阳能电池、平板显示器等光电领域。 相似文献
10.
采用射频磁控溅射方法在玻璃衬底上制备了掺铝ZnO透明导电薄膜(AZO)。为了降低AZO薄膜的电阻率, 采用在溅射气氛中通入一定比例H2的方法对AZO薄膜进行氢化处理, 并研究了溅射气氛中H2含量及衬底温度对AZO薄膜氢化效果的影响。结果表明: 在低温条件下, 氢化处理能有效降低AZO薄膜的电阻率; 在衬底温度为100℃的低温条件下, 通过调节溅射气氛中H2的比例, 制备了电阻率为6.0×10-4 Ω·cm的高质量氢化AZO薄膜, 该电阻值低于同等条件下未氢化AZO薄膜电阻值的1/3; 但随着衬底温度的升高, 氢化处理对薄膜电学性能的改善效果逐渐减弱。 相似文献
11.
以聚乙烯醇(PVA)为原料,成功制备了新型掺铝氧化锌包覆碳结构(AZO@C)的柔性纳米纤维。首先通过静电纺丝制备PVA初生纳米纤维,经过热处理工艺提高纳米纤维的耐水性,然后采用水热合成法在其表面包覆一层锌铝氢氧化物,再经过在500℃高温条件下烧结,PVA表面包覆的锌铝氢氧化物发生脱水反应形成致密的掺铝氧化锌(AZO)纳米粒子,同时PVA纳米纤维在高温煅烧中被炭化,形成一种新型AZO@C纳米复合材料。采用红外光谱(FT-IR)、热重分析仪(TGA)、扫描电镜(SEM)等对纳米纤维结构与性能进行测试及表征,AZO@C纳米纤维的平均直径为(320±45)nm。并通过太阳光下降解甲基橙实验证明了AZO@C柔性纳米纤维的光催化降解性能。 相似文献
12.
Fushan Li Yongzhi ZhangChaoxing Wu Zhixiao LinBeibei Zhang Tailiang Guo 《Vacuum》2012,86(12):1895-1897
Multilayer transparent electrode based on Al-doped zinc oxide (AZO)/Ag/Al-doped zinc oxide (AZO) was fabricated by sputtering, and a green organic light-emitting diode (OLED) device utilizing AZO/Ag/AZO as anode was fabricated. The AZO/Ag/AZO multilayer film exhibited superior square resistance and optical transmittance to those of commercial indium tin oxide (ITO). In comparison with the green OLEDs based on ITO and pure AZO anode, the green OLED based on AZO/Ag/AZO showed the highest light-emitting efficiency. The results indicate that AZO/Ag/AZO multilayer electrodes are a promising low-cost, low-toxic and low-temperature processing electrode scheme for OLED application. 相似文献
13.
Akihiko Kono 《Vacuum》2009,84(5):625-628
A hot-cathode plasma sputtering technique was used for fabricating the highly transparent and conducting aluminum-doped zinc oxide (AZO) films on glass substrates from a disk-shaped AZO (Al2O3: 2 wt.%) target. Under particular conditions where the target voltage was VT = −200 V and the plasma excitation pressure was PS = 1.5 × 10−3 Torr, the lowest resistivity of 4.2 × 10−4 Ω cm was obtained at 400 nm, and this was associated with a carrier density of 8.7 × 1020 cm−3 and a Hall mobility of 17 cm2/V s. From the annealing experiment of the AZO films in the oxygen and nitrogen gases of the atmospheric pressure it was revealed that both the oxygen vacancies and the grain boundaries in the polycrystalline AZO film played an important role in the electrical properties of the film. 相似文献
14.
15.
Hyeongsik ParkKyungsoo Jang Krishna KumarShihyun Ahn Jaehyun ChoJuyeon Jang Kyungjun AhnJeonghoon Yeom Dongseok KimJunsin Yi 《Thin solid films》2011,519(20):6910-6915
Cost efficient and large area deposition of superior quality Al2O3 doped zinc oxide (AZO) films is instrumental in many of its applications, including solar cell fabrication due to its numerous advantages over indium tin oxide (ITO) films. In this study, AZO films were prepared by a highly efficient rotating cylindrical direct current (DC) magnetron sputtering system using an AZO target, which has a target material utilization above 80%, on glass substrates in argon (Ar) ambient. A detailed analysis on the electrical, optical, and structural characteristics of AZO thin films was performed for the solar cell, as well as display applications. The properties of films were found to critically depend on deposition parameters, such as sputtering power, substrate temperature, working pressure, and film thickness. A low resistivity of ~ 5.5 × 10− 4 Ω cm was obtained for films deposited at 2 kW, keeping the pressure, substrate temperature and thickness constant at 3 mTorr, 230 °C and ~ 1000 nm respectively. This was due to an increase in carrier mobility and large grain size. Mobility is found to be controlled by ionized impurity scattering within the grains, since the mean free path of carriers is much smaller than the grain size of the films. The AZO films showed a high transparency of ~ 90% in the long wavelength region. Our results offer a cost-efficient AZO film deposition method that can fabricate films with significant low resistivity and high transmittance that can be applied in thin-film solar cells, as well as thin film transistor (TFT) and non-volatile memory (NVM). 相似文献
16.
Jun-ichi Nomoto Tomoyasu Hirano Toshihiro Miyata Tadatsugu Minami 《Thin solid films》2011,520(5):1400
In order to determine the influence of different types of magnetron sputtering (MS) depositions on the characteristics of Al-doped ZnO (AZO) thin films appropriate for applications as transparent electrodes in thin-film solar cells, transparent conducting AZO thin films were prepared on glass substrates at 200 °C by direct current (dc) magnetron sputtering (dc-MS), radio frequency (rf)-MS and rf power superimposed dc-MS (rf + dc-MS) depositions using an MS apparatus with the same AZO target. AZO thin films prepared by an rf + dc-MS deposition exhibited both a higher deposition rate than that found with rf-MS depositions and a lower resistivity or higher Hall mobility than those found with dc-MS. The lower dc sputter voltage featured in rf-MS and rf ± dc-MS depositions, producing smoother surface morphology and better crystallinity than obtained with dc-MS depositions. The light scattering characteristics of surface-textured AZO thin films prepared by various types of MS depositions were evaluated by observing the surface texture and measuring the optical transmittance and the diffusive component; wet-chemical etching of the thin film surface was performed in a 0.1% HCl solution. The obtainable haze property in the range from visible to near infrared in AZO films prepared by an rf + dc-MS deposition was markedly better than that obtained with dc-MS depositions. 相似文献
17.
本文采用溶庭-凝胶法,利用浸渍下降涂膜装置及氮气退火工艺成功制备出高透光率、高导电的掺铝氧化锌(ZnO:Al,AZO)透明导电膜,并对薄膜性能进行了表征。结果表明:氮气退火处理对AZO薄膜结构及光电性能有较大影响,退火处理后的薄膜c轴择优取向明显,晶粒尺寸变大,结晶程度变好,电阻率较空气中退火下降4~5个数量级,最低方块电阻为24Ω/□,平均透光率达80%以上。 相似文献
18.
Tadatsugu MinamiTomoyasu Hirano Toshihiro Miyata Jun-ichi Nomoto 《Thin solid films》2012,520(10):3803-3807
The influence of rapid thermal annealing (RTA) on surface texture formation as well as the light management obtainable by wet-chemically etching was investigated for transparent conducting Al-doped ZnO (AZO) thin films prepared by various types of magnetron sputtering deposition (MSD) with an oxide target. Texture-etched AZO films prepared by an r.f. (13.56 MHz) power-superimposed d.c. magnetron sputtering deposition (rf + dc-MSD) exhibited a higher haze value than found in equivalent films prepared by d.c. MSD. The order that the RTA treatment and the etching were conducted considerably affected the obtainable surface texture. Conducting the etching after a heat treatment with RTA in air resulted in larger etch pits as well as higher haze values than were obtained in AZO films that were etched before the RTA. A high haze value generally above 70% in the range from visible to near infrared (at wavelengths up to 1200 nm) was obtained in texture-etched AZO thin films that were prepared by rf + dc-MSD and etched after RTA at a temperature of 500 °C for 3 min. 相似文献
19.
In transparent conducting impurity-doped ZnO thin films prepared on glass substrates by a dc magnetron sputtering (dc-MS) deposition, the obtainable lowest resistivity and the spatial resistivity distribution on the substrate surface were improved by a newly developed MS deposition method. The decrease of obtainable lowest resistivity as well as the improvement of spatial resistivity distribution on the substrate surface in Al- or Ga-doped ZnO (AZO or GZO) thin films were successfully achieved by inserting a very thin buffer layer, prepared using the same MS apparatus with the same target, between the thin film and the glass substrate. The deposition of the buffer layer required a more strongly oxidized target surface than possible to attain during a conventional dc-MS deposition. The optimal thickness of the buffer layer was found to be about 10 nm for both GZO and AZO thin films. The resistivity decrease is mainly attributed to an increase of Hall mobility rather than carrier concentration, resulting from an improvement of crystallinity coming from insertion of the buffer layer. Resistivities of 3 × 10− 4 and 4 × 10− 4Ω cm were obtained in 100 nm-thick-GZO and AZO thin films, respectively, incorporating a 10 nm-thick-buffer layer prepared at a substrate temperature around 200 °C. 相似文献
20.
以二水乙酸锌为原料,乙二醇甲醚和无水乙醇为溶剂,乙醇胺为稳定剂,六水合氯化铝为掺杂剂,合成AZO前驱液,采用自制的液位沉降装置在玻璃衬底上制备AZO薄膜,用XRD、UV—Vis、AFM、四探针、台阶仪等方法对薄膜进行表征,结果表明,应用液位沉降法制备AZO薄膜的优化条件为:溶胶浓度为0.5mol/L、Al3+/Zn2+浓度比为4at%、干燥温度100℃、干燥时间10min、预处理温度450℃、镀膜层数为20层、液位沉降速度为5cm/min、预处理时间为10min、550℃退火2h,得到薄膜透光率为88%,方块电阻为536Ω/□。 相似文献