聚苯胺/钛酸钡复合粒子的合成及结构表征

采用硅烷偶联剂对钛酸钡进行表面修饰,并实施接枝聚合,制备聚苯胺/钛酸钡壳核型的复合粒子.采用SEM、XRD等分析方法对复合粒子的表观形貌和结构进行表征,并应用Gaussian 03软件对硅烷偶联剂分子在钛酸钡表面接枝的几何构型进行计算.结果表明,采用硅烷偶联剂后,苯胺在钛酸钡表面有效地实施了接枝聚合,形成壳核结构,与理论计算结果一致.     

壳核型聚苯胺/钛酸钡复合电流变材料的制备及表征

采用溶液聚合的方法,在经过硅烷偶联剂表面修饰的钛酸钡微粉表面原位聚合聚苯胺,得到聚苯胺/钛酸钡壳核结构(BaTiO3/PAn)的有机-无机复合粒子.借助SEM、XRD、FT-IR、DSC-TG等分析手段研究了复合粒子的形貌、结构及热性能.利用改装后的旋转粘度计分别对钛酸钡和聚苯胺/钛酸钡复合颗粒的电流变性能进行研究.结果表明利用硅烷偶联剂成功地在钛酸钡粒子表面接枝合成聚苯胺,聚苯胺/钛酸钡复合颗粒电流变液的电流变性能明显比纯钛酸钡的电流变性能有所提高.     

聚苯乙烯/纳米SiO2复合颗粒制备与表征

为改善二氧化硅(SiO2)纳米粒子与聚合物基体间的亲和性,使SiO2表面功能化,将硅烷偶联剂KH-570引入C=C基团,采用乳液聚合方法在纳米SiO2粒子表面接枝苯乙烯(St)单体,实现了纳米二氧化硅表面的聚苯乙烯(PS)高分子包覆改性,制备了具有核/壳结构的SiO2-PS复合纳米粒子,产物的单体转化率和接枝效率在80%以上.研究了二氧化硅含量和偶联剂用量对聚合反应的单体转化率和接枝效率的影响,探讨了偶联剂的作用机理,利用FT-IR、TEM、TG对SiO2-PS复合粒子的表面结构进行了表征.结果表明,复合粒子具有明显的核壳结构,壳层厚度在20nm左右,乳液聚合过程可有效使二氧化硅的团聚体剥离呈纳米级颗粒.     

纳米粒子表面修饰与改性--SiO2纳米粒子表面接枝聚合

通过硅烷偶联剂处理SiO2纳米粒子并向其表面引入双键使其功能化，采用溶液聚合方法在SiO2纳米粒子表面进行接枝聚合实现高分子对SiO2纳米粒子的表面包覆处理，制得SiO2／PMMA复合纳米粒子，采用IR、XPS对SiO2纳米粒子表面结构进行了表征研究。     

双亲性纳米TiO2复合粒子的制备与研究

采用疏水型硅烷偶联剂KH570表面接枝改性纳米TiO2,引入化学键结合的不饱和双键,再通过无皂乳液聚合法合成双亲性聚丙烯酸(PAA)-g-硅烷偶联剂KH570-g-纳米TiO2复合粒子.研究了偶联剂用量对纳米TiO2粒子分散性以及聚合条件对聚合物接枝率变化和微观形态的影响.红外光谱和热重测试分析结果表明,纳米TiO2表面偶联剂接枝率为7.62％,聚合物接枝率达61.3％;透射电镜观察表明,偶联剂处理使纳米TiO2的亲油性和分散性均提高,聚合物接枝后的复合粒子能够在有机溶剂中分散均匀且粒径增加至30nm左右.     

界面接枝聚合制备有机/无机核壳粒子及聚合物微胶囊

采用界面接枝聚合法成功制备了粒径与壳厚均匀、可控的SiO2/PMMA核壳粒子及PMMA微胶囊.研究发现,单体用量是影响聚合物壳层厚度的重要因素,随MMA用量增加,SiO2/PMMA核壳粒子壳层变厚,其由单纯化学键转向化学键与物理缠结并存.当MMA用量超过SiO2总表面所能消耗的单体最大值时,MMA将均相成核,形成的聚合物乳胶粒子与核壳粒子并存于反应产物中.TEM、FTIR、DLS分析结果表明,PMMA外壳通过共价键锚固在SiO2表面,实现了对其的包覆,证实了核壳结构、空心结构的形成.     

苯乙烯在纳米TiO_2表面的接枝聚合

纳米填料与塑料共混,可以改善塑料的强度、韧性.但是纳米填料与塑料的相容性差,需要对纳米材料进行表面改性.采用硅烷偶联剂γ-(甲基丙烯酰氧基)丙基三甲氧基硅烷对纳米Ti02进行表面处理,在其表面引入双键,然后与苯乙烯共聚,制备表面接枝聚苯乙烯的纳米TiO2粒子,拟用于聚苯乙烯抗冲击改性.采用红外光谱、扫描电镜、原子力显微镜对接枝聚合后的纳米TiO2粒子的形貌进行观察,并且采用热失重分析法定量表征纳米材料表面的接枝率.结果表明:通过悬浮聚合,TiO2粒子表面成功接枝聚合了聚苯乙烯.     

纳米镍粒子表面接枝聚合甲基丙烯酸甲酯

采用丙烯酸(AA)和盐酸(HC l)处理纳米镍粉,通过乳液聚合方法,在纳米镍粉存在下甲基丙烯酸甲酯(MM A)原位聚合,形成纳米镍/聚甲基丙烯酸甲酯(nanoN i/PMM A)复合粒子。IR分析表明,AA通过化学键与纳米镍粒子结合,颗粒表面引入了C=C基团;采用XRD,IR,TGA,DSC,TEM等分析手段分别对含有盐酸处理的纳米镍粉的复合粒子(HC l-nanoN i/PMM A)及含有AA处理的纳米镍粉的复合粒子(AA-nanoN i/PMM A)进行了分析表征。结果表明,MM A在AA-nanoN i表面接枝聚合,纳米镍粉表面的双键参与了聚合反应,形成了具有核壳结构的复合粒子。     

纳米二氧化钛、钛酸钡的有机化学修饰及其电流变效应

采用纳米氧化钛,钛酸钡作为复合电解质微粒核,在一定条件下将制备的氧化钛,钛酸钡纳米粒子表面修饰一层含有酰胺基和不含酰胺基的有机物,然后将所得到的微粒与硅油按一定体积比混合后,测量其电流变效应.对含酰胺基的有机物和不含酰胺基的有机物包裹后所制备的电流变液效应进行比较,讨论了在电流变液制备过程中有机物的结构,研磨过程和温度等因素对电流变液性能的影响.采用X射线衍射,傅立叶变换红外光谱,透射电子显微镜对核-壳型纳米复合结构进行了表征.     

PBA/PMMA型核壳结构增韧剂的合成及表征

采用传统乳液聚合、无皂乳液聚合及其扩径聚合的方法,得到了粒径从０．０７８ｕｍ至１．３８ｕｍ的窄分布的ＢＡ（丙烯酸丁酯）为主单体的ＰＢＡ橡胶核,然后,进行ＰＭＭＡ的壳层种子接枝乳液聚合,得到ＰＢＡ／ＰＭＭＡ核壳结构胶乳,乳液经破乳过滤干燥后得到核壳结构增韧剂,发现随着橡胶相交联剂用量的增加,ＰＢＡ胶粒表现双键含量增加;核壳复合粒子表观羧基的含量可以用电位滴定法获得。实验表明,进行壳层混合单体（ＭＭＡ、ＭＡＡ）接枝时羧基主要分布在胶粒的浅层;核壳比对复合粒子的形态有较大影响。利用ＬＳ激光粒径仪测得胶粒的大小及其分布;同时,ＴＥＭ照片显示了核壳粒子的形态和尺寸。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Optimization of the thickness of glass/TiO2/Ag/Ti/TiO2/SiON multilayer film

The TiO₂/Ag/Ti/TiO₂/SiON multilayer film was deposited on glass substrate at room temperature using magnetron sputtering method. By varying the thickness of each layer, the optical property was optimized to achieve good selective spectral filtering performance in Vis-NIR region. The multilayer film achieves maximum transmittance of 92.7% at 690 nm, in which the both TiO₂ layers are 33 nm. For good conductivity and transmittance, a 4 nm Ti layer and a 30 nm SiON layer are necessary.     

Effect of pressure onTc in La2-xBaxCuO4 withx=0.125

The superconducting transition temperature,T _c , of La_2–x Ba _x CuO₄ has been measured under high pressure up to 8 GPa.T _c is found to change drastically at the pressure where the structural phase transition takes place. This finding clearly indicates that there exists an intimate relation between the crystal structure and superconductivity.     

t-Model mechanism of high-Tc cuprates

A doublon formalism ofd-p model Hubbard Hamiltonian is studied only with transfer integrals, and without the superexchange term. This gives excellent doping-dependent features ofT _c in high-T _c cuprates.     

Properties of CdxPb1−xTe thin films

Thin films of Cd_xPb_1?xTe have been grown on mica substrates using a flash evaporation technique and isothermal substrate heaters. The Cd concentration of the films was found to increase with decreasing substrate temperature and increasing deposition rates. The Hall coefficient changed from positive to negative with increasing substrate temperature, as did the Seebeck coefficient. Both these changes were associated with an increase in the rate of re-evaporation of Te and an improvement in the crystallinity of the films. Carrier mobilities less than bulk values were obtained; scattering mechanisms are discussed.     

Influence of Sm2Ba4CuBiOy phase content on Jc of SmBa2Cu3O7/Sm2Ba4CuBiOy nano-composites

Presence of various nano-scale Y₂Ba₄CuMO_y phase inclusions in YBa₂Cu₃O_7−δ phase matrix are shown to improve magnetic flux pinning over wide range of magnetic fields. We first fabricate single phase of Sm₂Ba₄CuBiO_y (Sm-2411) using a solid-state reaction and then introduced them into SmBCO single grains. Top seeded melt growth (TSMG) has been used to grow SmBCO single grains in air atmosphere. A significant improvement in J_c is observed, over wide magnetic fields, for single grains containing Sm-2411nano-phase inclusions when compared to that of SmBa₂Cu₃O_7−δ/Sm₂BaCuO₅ composites. When compared to YBCO nano-composites, SmBCO composites are shown to exhibit high J_c at medium range of magnetic fields (1–2 T) at 77 K.