抑制等信道间距陆上干线光纤通信系统中光纤色散和四波混频效应的新方案

提出了一种用以克服等信道间距划分、波分复用（ＷＤＭ）＋掺饵光纤放大器（ＥＤＦＡ）陆上光纤通信系统中光纤色散和四波混频（ＦＷＭ）效应的新方案。采用１５５０ｎｍ处色散为－２．８９ｐｓ／ｋｍ／ｎｍ的小色散单模光纤（ｓｍａｌｌ－ｄｉｓｐｅｒｓｉｏｎｓｉｎｇｌｅ－ｍｏｄｅ－ｆｉｂｅｒ，ＳＤＳＭＦ）可避免严重的ＦＷＭ效应，同时利用ＩＴＵ－ＴＧ．６５２非色散位移光纤（ｎｏｎ－ｄｉｓｐｅｒｓｉｏｎ－ｓｈｉｆｔｅｄｆｉｂｅｒ，ＮＤＳＦ），在ＥＤＦＡ整个带宽范围内（１５３０～１５７０ｎｍ）补偿ＳＤＳＭＦ引入的负色散。采用此方案，一个１０路×１０Ｇｂ／ｓ、１０级ＥＤＦＡ级联的等信道间距（１ｎｍ）光纤通信系统，经近千公里的光纤传输后，ＦＷＭ和色散引入的恶化量将分别小于１ｄＢ。     

10频道“波分复用＋光纤放大器”全光通信实验系统

在国内首次研制了使用１个光纤放大器的１０频道１０２ｋｍ无再生中继“ＷＤＭ＋ＥＤＦＡ”全光光纤传输实验系统。每频道传输码率为１４０Ｍｂ／ｓ或２８０Ｍｂ／ｓＮＲＺ。所用光纤放大器为增益平坦型，小信号增益为３５ｄＢ。系统全部采用国产ＤＦＢ激光器，各频道波长分别为１５３１、１５３５、１５３７、１５４５、１５４７、１５４９、１５５１、１５５９、１５６１ｎｍ，在波长为１５５１ｎｍ的频道内布置了２路频分复用（ＦＤＭ）系统。波长分布遍及整个光纤放大器的通带。经无再生中继传输１０２ｋｍ后，在误码率为１×１０￣（－９）条件下，实测了尚有数ｄＢ以上（最大为１２ｄ８）的功率裕量。系统使用光栅合、分波器作为波分复用和解复用器，频道间隔为２ｎｍ及其整数倍，系统具有１８个频道的能力。     

带宽〉40nm的980nmLD泵浦掺Er^3＋光纤放大器模块

在国内首次用９８０ｎｍ激光二极管和参量优化Ｅｒ３＋／Ａｌ３＋共掺杂光纤研制成光学带宽＞４０ｎｍ的光电一体化光纤放大器实用型模块样机。模块净增益２５ｄＢ，饱和输出功率０ｄＢｍ，最大输出功率８ｄＢｍ，噪声系数＜５ｄＢ，可供波分复用光纤通信系统和光孤子传输实验试用。     

4×622Mb／s密集波分复用282Km无再生中继光纤传输实验

介绍了８６３计划光电子主题光电子器件试验床（Ｔｅｓｔｂｅｄ）的概况及其最新的实验结果。采用４只国产ＤＦＢ激光器组件为光源、３台国内研制的掺铒光纤放大器作级联放大，实现了在１５５０ｎｍ波段、４路６２２Ｍｂ／ｓ信道、相邻信道波长间隙为２ｎｍ的２８２Ｋｍ单模光纤无再生中继传输，系统误码率优于１×１０－１２。实验表明，随着我国高性能的量子阱半导体激光器和掺铒光纤放大器的研制成功，进行下一代光纤通信技术的研究，包括开展具有多级掺铒光纤放大器放大的高速大容量波分复用光纤通信系统的研制和开发已有了坚实的基础。     

8频道151公里全光波分复用准工程化光纤通信系统

拥有８个频道、传输距离为１５１公里、使用二个光纤放大器和工程化端机的全光波分复用光纤通信系统在北京大学研制成功。该系统在长期工作状态下各频道的误码率在１．６×１０（－１２）至０×１０（－１５）（即单频道连续测量１５天无误码）之间。该系统使用计算机对波长进行智能控制并监视该系统的工作状态。各频道波长分别是１５３１ｎｍ，１５３３ｎｍ，１５３５ｎｍ，１５３７ｎｍ，１５３９ｎｍ，１５４３ｎｍ，１５４５ｎｍ和１５４９ｎｍ。每频道传输码率为１４０Ｍｂ／ｓ，传输码型为１Ｂ１ＨＣＭ１ＰＲＢＳ。因此该系统总传输码率可以达到２．２Ｇｂ／ｓ（即２８０Ｍｂ／ｓ×８）。经过长时间开机检测，该系统已经接近于工程使用要求。     

阵列光纤传感式多通道脉冲分光颜色测量系统

开发了一种用采脉冲氙灯光源照明，多元阵列光纤作为多通道接收器的光纤型脉冲多通道快速分光颜色测量系统。该仪器的色分辨率高，动态范围大，色品坐标精度为０．００２，测量光谱范围为３８０～７８０ｎｍ，光谱分辨率为１０ｎｍ，测量时间几个毫秒，测量时间间间隔小于５ｓ。它能测量较暗物体和荧光物体的颜色，也能进行脉冲光源的相对光谱功率分布的测量，并能给出各种标准照明体和各种色度系统下的色度参数。     

109公里2.5Gb／s无中继IM／DD光纤传输实验系统

对国内首次２．４８８Ｇｂ／ｓ光纤传输系统实现结果进行了报道。系统工作波长１５５０ｎｍ，利用常规单模光纤实现了１０９公里无中继传，要用ＩＭ／ＤＤ方式，接收机灵敏度为－３０．５ｄＢｍ．     

4×155Mb／s频分复用（FDM）光纤通信系统的研究

报道了一个无故障工作时间大于２４小时的四路１５５Ｍｂ／ｓ频分复用（ＦＤＭ）光纤通信系统，实测系统误码率优于０×１０（－１４）。系统接收机包括解复用光滤波器，接收机灵敏度优于－３０ｄＢｍ（ＢＥＲ＝１×１０（－９），频道间距为０．１ｎｍ，四路ＦＤＭ信号－２０ｄＢ的总谱宽为０．７ｎｍ。系统采用国产ＤＦＢ激光器为光源，实际光纤传输距离１８ｋｍ。系统全部实现了脱离光学平台的模块化结构，在长期的系统实验中显示了优良的稳定性。这一成果为ＦＤＭ在光纤传输接入网中的进一步实用化开发铺平了道路。     

2.5GHZ光孤子传输

报导了我国首次成功地实现了２．５ＧＨｚ光孤子传输。近变换极限的孤子脉冲源是带有Ｆ－Ｐ标准具的增益开关分布反馈激光二极管。孤子脉冲的功率通过分别由１４８０ｎｍ和９８０ｎｍ泵浦的两个掺饵光纤放大器放大，当入纤功率达到一阶孤子功率时，经过２１ｋｍ色散位移光纤传输后，孤子的输出脉宽保持不变。同时还观察到孤子脉冲压缩现象。     

用火花塞光纤传感器测量发动机的爆震

应用所研制的火花塞光纤传感测量系统对ＢＪ４９２Ｑ汽油机进行爆震燃烧测量和研究。分析了爆震燃烧对火焰光辐射变化的影响。正常燃烧理论空燃比工况时，ＣＨ（４３１．５ｎｍ），Ｃ２（５１６．５ｎｍ）及Ｈ２Ｏ（５８８ｎｍ）自由基的光强曲线出现双峰值，着火延迟期内光辐射为自由基的光辐射。爆震燃烧较强工况，只出现一个较大光强峰值，主要是碳粒子的热辐射，峰值处出现剧烈波动，相位提前，无自由基光辐射。爆震燃烧较强峰值     

Coupling effect of multi-wavelength lasers in damage performance of beam splitters at 355 nm and 1064 nm

The coupling effect between a 355 nm laser and a 1064 nm laser in damage initiation and morphology formation was investigated on beam splitters. When extra 1064 nm pulse energy was low, 355 nm laser-induced damage thresholds (LIDTs) increased because of laser conditioning, and when 1064 nm pulse energy was high enough, 355 nm LIDTs decreased. Damage morphologies were also studied to explore the damage mechanism at respective wavelengths. For the entirely different electric field intensity distributions, 355 nm laser-induced damages were mainly from nanometer-sized absorbers at upper interfaces, while initiators for the 1064 nm laser were located at substrate-coating interface or substrate subsurface. Under simultaneous illumination, the sensitive defects were still the precursors, and damages also showed the representative damage characteristics induced by a single laser, namely, 355 nm laser-induced small pits and 1064 nm laser-induced large delamination. Further studies also showed that, although the 1064 nm laser fluence was kept unchanged, delamination area grew with the increase of pits, which were induced by the 355 nm laser. A possible mechanism was proposed to interpret the delamination area growth phenomenon.     

Multicolor up-conversion emissions of Tm3+/Er3+/Yb3+ tri-doped YF3 phosphors

Tm3+/Er3+/Yb3+ tri-doped yttrium fluoride (YF3) phosphors were prepared by a facile hydrothermal method. X-ray topographic analysis found that the phosphors were crystallized products. Their sizes and morphologies were characterized by scanning electron microscopy (SEM, Hitachi S-4800), which indicated that most of the YF3 phosphors were hundreds of nanometers in size. Up-conversion (UC) spectra were recorded under 980-nm diode laser excitation at room temperature with a fluorescence spectrometer (Hitachi F-4500). Plenty of UC emissions of Tm3+ and Er3+ were observed from ultraviolet to red. For Tm3+ ions, a five-photon process (approximately 291 nm and approximately 347 nm), a four-photon process (approximately 362 nm and approximately 452 nm), and a three-photon process (approximately 475 nm) were identified in the UC spectra. The UC emissions from the Er3+ were: approximately 380 nm, approximately 408 nm, approximately 521 nm, approximately 537 nm, and approximately 652 nm. Therefore, cyan-white light can be observed by the naked eye at 980-nm excitation, even under low excitation power density. By comparing the UC spectra of the phosphors annealed at different temperatures, we found that the intensity of the UC luminescence increased as annealing temperature increased. Furthermore, the spectral dependencies on Tm3+ doped concentrations were studied. The energy transfer processes and fluorescence dynamics in the tri-doped system are currently being investigated.     

纳米SiO_2材料的制备及其发光性能研究

采用溶胶-凝胶法制备了纳米SiO2,样品在800℃下煅烧2h。X-射线衍射(XRD)及扫描电子显微镜(SEM)测试结果表明,该材料具有非晶态结构,颗粒尺寸为90~100nm。该样品在紫外灯照射下发出强烈的黄绿色可见光;对样品进行荧光光谱分析表明,该材料可以发射出较强的490nm的蓝绿光和弱的520nm的绿光。     

Synthesis and electro-optical properties of carbazole-substituted pyrene derivatives

Mono and dicarbazole-substituted pyrene derivatives, 9H-carbazol-9-ylpyrene (MCzP) and 1,6-di(9H-carbazol-9-yl)pyrene (DCzP), with dual-purpose function as a blue emitting and charge transporting layer in organic light emitting diodes, were synthesized and characterized. These series of molecules consisted of an electron donating (D) carbazole and an electron accepting (A) pyrene in D-A and D-A-D shapes. Non-doped blue electroluminescent devices with the configurations of ITO (150 nm)/alpha-NPD (30 nm)/DCzP (40 nm)/LiF (1 nm)/Al (150 nm) (D1) and ITO (150 nm)/2-TNATA (15 nm)/alpha-NPD (20 nm)/DCzP (40 nm)/BCP (15 nm)/Alq3 (10 nm)/LiF (1 nm)/Al (120 nm) (D2) were fabricated. D1 and D2 devices showed blue emission at 492 nm and 488 nm, and maximum luminance of 840 and 7560 cd/m2 obtained at 13 V and 15 V, respectively.     

High-accuracy wavelength-change measurement system based on a Wollaston interferometer, incorporating a self-referencing scheme

A novel wavelength-difference measurement scheme with a Wollaston prism is presented. By using a suitable reference wavelength, a small variation in the signal wavelength can be converted into a relatively larger change in the modulated wavelength, as a result of the so-called fringe beating effect, resulting in enhanced measurement sensitivity by use of autocorrelation and Gaussian filtering techniques. From the results of a simulation carried out, we observed a wavelength variation of 0.01 nm over 15 nm or 0.1 nm over 60 nm for a typical pair of laser diodes with wavelengths of 785 and 810 nm, and wavelength variations of 0.5 nm over 40 nm or 1 nm over 110 nm for 671-and 785-nm wavelengths. These results were partially verified by the experimental results obtained for which a resolution of 0.01 nm over a range of 2.5 nm for the first pair and 0.5 nm over 4 nm for the second pair of laser diodes was seen. The results have applications to the determination of wavelength variations in a wavelength-division multiplexing system or measurement of the wavelength changes induced in a range of optical sensors.     

Effects of composition and thickness on the electrical properties of indium oxide/tin oxide multilayered films

Indium oxide/tin oxide multilayered films with a 2 nm pair thickness were deposited on glass substrates at temperatures lower than 100° C by an ion-beam sputtering method. The structure, electrical properties and visible transmissivity were investigated as a function of composition and the total thickness on as-deposited and annealed films. X-ray diffraction analysis showed that the as-deposited 200 nm thick film (with 0.15 nm tin oxide layers) was partially crystalline and films thinner than 100 nm were amorphous or microcrystalline. The roomtemperature resistivity of as-prepared films increased with the increase of an average tin oxide layer thickness from ∼0.05 to ∼0.3 nm (ideal monolayer thickness) under a constant total thickness ∼100 nm. We observed a decrease of the Hall mobility with the increase of the total film thickness from 10 to 200 nm in as-deposited samples containing 0.15 nm tin oxide layers.     

Effects of Annealing on High-Magnetoresistance Tunnel Junctions Using Co75Fe25 Ferromagnetic Electrodes

1. IntroductionSpin tunneling magnetoresistive effect in ferromagnet / insulat or / ferromagnet (FM / I / F M ) j "net ionshas been the subject of intense study since the discovery of large tunneling magnetoresistance (TMR) inFe/Alzos/Fe and CoFe/Alzos/Co junctions at roomtemperature (RT)[',']. TMR ratio of FM/I/FM junctions at the early period 'was achieved only a fewpercent at RT due to the restriction of fabricationtechnology and TMR junction structure and area[3-6].Recently, re…     

Gd^3＋共掺杂CaZrO3：Eu^3＋粉体的制备及发光性质研究

采用柠檬酸溶胶－凝胶法制备了Gdn共掺杂CaZrO3：Eu^3＋发光粉体,利用X射线衍射、红外光谱、紫外-可见吸收光谱、差热-热重分析对样品进行表征,结果表明,焙烧后样品CaZrO3：Eu^3＋,Gd^3＋为CaZrO3的钙钛矿结构。详细研究了Gdn共掺CaZrO3：Eu^3＋体系的发光性质,激发光谱显示,在200～550nm波长范围,主要强的激发峰位于395nm和465nm处,其中以395nm的激发峰最强。取395nm为最佳激发波长研究发射光谱,结果显示,出现了590nm和613nm两个发射峰,且613nm处^5Do→^7F2跃迁强度大于590nm处^5Do→^7F1跃迁强度。同时研究了Gd^3＋掺杂浓度及C／M对发光强度的影响,发现Gd惨杂浓度为8％、C／M值为1．5：1时发光强度最强。     

新型含氟8-羟基喹啉锌配合物的合成及光学性能研究

设计合成了3种新型含单氟8-羟基喹啉衍生物配体:(E)-2-[2-(2-氟代苯基)乙烯基]-8-羟基喹啉(4a)、(E)-2-[2-(3-氟代苯基)乙烯基]-8-羟基喹啉(4b)、(E)-2-[2-(4-氟代苯基)乙烯基]-8-羟基喹啉(4c)及其相应的锌配合物(5a)、(5b)、(5c),利用1 H-NMR、IR、MS、元素分析确认了其结构。测定了它们在DMF溶液中的荧光性质;荧光光谱显示化合物4a、4b、4c在DMF溶液中的λmax分别是505nm、487nm、513nm;5a、5b、5c的λmax分别是559nm、598nm、588nm,荧光光谱显示氟基位置的改变可以调控8-羟基喹啉锌配合物的发光性质。     

Radiance Temperatures (in the Wavelength Range 521 to 1500 nm) of Rhenium and Iridium at Their Melting Points by a Pulse-Heating Technique

The melting-point radiance temperatures (at seven wavelengths in the range 521 to 1500 nm) of rhenium and iridium were measured by a pulse-heating technique. The method is based on rapid resistive self-heating of the specimen from room temperature to its melting point in less than 1 s and on simultaneously measuring the specimen radiance temperature every 0.5 ms with two high-speed pyrometers. Melting was manifested by a plateau in the radiance temperature-versus-time function for each wavelength. The melting-point radiance temperatures for a given specimen were determined by averaging the measured temperatures along the plateau at each wavelength. The melting-point radiance temperatures for each metal were determined by averaging results for several specimens at each wavelength. The results are as follows. Based on estimates of the random and systematic errors arising from pyrometry and specimen conditions, the expanded uncertainty (two standard-deviation level) in the reported values is ±8K.