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1.
Fe(OH)3中微量金属离子对水热合成α—Fe2O3粒径的影响   总被引:3,自引:0,他引:3  
郑学忠  刘晓林 《功能材料》1997,28(6):607-608
本文研究了某些金属离子(Al^3+、Mn^2+、Zn^2+、Cr^2+、Ni^2+、Co^2+)Fe(OH)3凝胶经水热法合成的α-Fe2O3微粉颗粒大小的影响。研究结果出现,随着金属离子的浓度在一定范围内(0.010-0.050mol·L^-1)的增加,α-Fe2O3颗粒有减小的趋势。其中加入Co^2+(0.050mol·L^-1)、Mn^2+(0.100mol·L^-1)可以得到粒径为75nm  相似文献   

2.
液膜分离富集和测定锤液中的微量铅   总被引:1,自引:0,他引:1  
用二环己基-18-王冠-6(DC-18-C-6)、表面活性剂SPAN80、中性油SIOON-1和溶剂三氯甲烷乳状液膜体系,研究了Pb^2+的迁移行为。在适宜条件下,8min内Pb^2+的迁移率达99.4%以上,相同条件下,许多金属离子(如Ni^2+、Li^+、K^+、Na^+、Ca^2+、Mg^2+、Sr^2+、Ba^2+、Fe^3+、AL^3+、Cu^2+、Zn^2+和Co^2+等)均不被迁移,  相似文献   

3.
杨书廷  曹益林 《功能材料》1996,27(5):396-398
应用差热分析、X射线粉末衍射及电测量技术对Na2Mo0.1S0.9O4(α)-Pr2(SO4)3体系进行了研究,结果表明,在Na2Mo0.1S0.9O4相中加入少量的Pr2(SO4)3就可以形成完全固熔体,且无任何相变存在,当Pr2(SO4)3含量达到4mol%时,电导率较纯Na2Mo0.1S0.9O4提高两个数量级(553K时,σ=1.09×10^-3Scm^-1),同时还证明了该类导体的导电机  相似文献   

4.
考察了等离子喷涂Cr3C2-NiCr涂层及其表面化学镀Ni镀层通过不同配副组成摩擦副的摩擦学特性,并应用SEM、XRD和XPS对磨痕进行了分析.结果发现:等离子喷涂Cr3C2-NiCr涂层及其表面化学镀Ni镀层自配副组成摩擦副,均表现出较大的摩擦系数和磨损系数;但是,Cr3C2-NiCr涂层表面化学镀Ni镀层与Cr3C2-NiCr涂层配副组成摩擦副,在于摩擦条件下,能达到0.12的摩擦系数和接近10-6mm3(Nm)-1的磨损系数.上述结果是由于Cr3C2-NiCr涂层的磨损机理从强烈的层状颗粒剥落转变为沿气孔和微裂纹等处的颗粒断裂.  相似文献   

5.
本文利用水热合成方法对MSnO3和MSn(0.5)Zr(0.5)O3(M=Sr,Ba)的合成进行了研究,并采用XRD、SEM和ICP等方法对产物进行了表征,结果表明:在M(OH)2-SnO2(或SnO2+ZrO2)-KOH体系中,当KOH/Sn和KOH/(Sn+Zr)≥30时,260℃下晶化5~7天,可获得MSnO3和MSn(0.5)Zr(0.5)O3纯相,在M(OH)2-(SnO2+ZrO2)-KOH-H2O体系中,可通过控制介质碱度来获得MSnO3+MZrO3混合物和MSn(0.5)Zr(0.5)O3,并根据合成规律初步探讨了反应过程.  相似文献   

6.
在协同流体载体(TOA和PMBP)、表面活性剂(SPAN80)、膜增强剂(液体石蜡)、溶剂(煤油)和内相(TU-HCl溶液)乳状液膜体系中,在迁移条件下,15min内Au迁移率达99.5%以上,而许多常见的离子则不能通过液膜迁移,只有Au才能从含有ΣRE^3+、Ag^+、Pd^2+、Pt4^+、Rh^3+、Cu^2+、Fe^3+、Al^3+、Pb2^+、Zn^2+、Ni^2+、Mo^6+、W^6+  相似文献   

7.
镍合金化学镀层的阳极行为及局部腐蚀   总被引:3,自引:0,他引:3  
利用电化学测试及X射线光电显微(XPS)、扫描电镜(SEM)等方法,研究了镍合金化学镀层在酸性介质中的阳极行为局部腐蚀,结果表明,由于Ni-P合金中磷的不均匀分布及胞界等的存在,在Cl^-的作用下,Ni-P合金发生孔蚀。Ni-P合金表面膜由Ni(OH)2及Ni3(PO4)2组成,在开路及电位较低时,以Ni(OH)2为主,在电位较高时,以Ni3(PO4)2为主。阳极极化过程中,由于表面膜组成的改变导  相似文献   

8.
含碳Fe—Mn—Si—Cr—Ni合金形状记忆效尖的研究   总被引:3,自引:1,他引:2  
李宁  文玉华 《功能材料》1996,27(3):271-273
研究了碳加入后对Fe-14Mn-5Si-8Cr-4Ni合金形状记忆效应(SME)的影响。结果表明,碳元素的适当加入,有助于合金的可恢复应变的提高。在3.75 ̄7.5%变形量时,含碳量为0.12%的合金的可恢复应变量可达2.5 ̄3%,高于超低碳合金(C〈0.02%)。  相似文献   

9.
张其春  吴培基 《功能材料》2000,31(2):136-138
利用TTFTT为矫合成一系列的有机金属聚合物(MTTFTT^2-)a(M=Ni,Cu,Fe)研究了它们的电性质,结果表明,在室温下,它们的电导出现在10^05-0.04Ω^-1.cm^-1范围内。(TEAXNiTTFTT)n是室温下聚合物中导电最高的,我们测定了它的电阻对温度的依赖关系,呈半导性质,同时对该样品还采用了VSC的测量方法,结果表明该聚合物的电阻对温度的依赖关系在283~150K区间内  相似文献   

10.
立方A^4+M^5+2O7型化合物与新型负热膨胀材料   总被引:1,自引:0,他引:1  
概述了立方A^4+M^5+2O7型化合物的结构特点,讨论了AV2-xPxO7型(A=Zr或Hf;x=0.1~1.2)及其部分取代的A^4+1-yB^4+yV2-xPxO7型(B=Ti,Ce,Th,U,Mo,Pt,Pb,Sn,Ge或Si;y=0.1~0.4)和A^4+1-yC^1+yD^3+yV2-xPxO7型(C为碱金属元素,D为稀土金属元素)材料的负热膨胀性能。  相似文献   

11.
将真空常压烧结方法制得的Cr3C2-Ni2Al 复合焊丝堆焊于碳钢表面。分析表明, 在堆焊过程中, 利用氩弧物理热和Ni-Al 反应热, Ni 与Al 化合反应生成Ni3Al 金属间化合物, Cr3C2 则发生分解, 除少部分[ C]与[Cr ]固溶于Ni3Al 基体中外, 大部分反应析出更稳定的Cr7C3 相, 其尺寸取决于堆焊层中不同区域的冷却环境,较为均匀地分布于Ni3Al 基体中。由于Cr 在Ni3Al 中的固溶度远大于C , 加之Cr3C2 转化为Cr7C3 也造成部分富余的C , 结果造成在该Ni3Al 表面强化材料焊层中形成石墨相, 其密度轻、熔点高, 主要偏聚于焊层表层。Cr7C3 / Ni3Al 复合材料的室温、高温硬度远高于传统高温耐磨材料Stellite 合金, 该材料有望成为一种新型的高温耐磨表面强化材料。   相似文献   

12.
A systematic DFT investigation has been conducted to explore the structures and electronic properties of the metal-carbide endofullerenes M2C2 @ C78 (M = Ti, Zr, Hf) at the PBE/DNP level of theory. The theoretical calculations predicted the following: (i) this series of endofullerenes have the valence states [M4+]2C2(2-) @ C78(6-) (ii) the structure of the [M2C2](6+) cluster encapsulated in the C78(6-) (D3h) cage varies with the increasing of the ionic radius of M4+, i.e., from a linear M-C [triple bond] C-M geometry for M = Ti, through a zigzag geometry for M = Hf to a side-on binding mode for M = Zr; (iii) M2C2 @ C78 (M = Zr, Hf) should display interesting intramolecular dynamic behavior at room temperature, i.e., the encapsulated C2(2-) moiety can rotate freely around the C3-axis of the C78(6-) (D3h) cage; (iv) the [Ti2C2]6+ in the lightest Ti2C2 @ C78 is far more fixed by adopting the linear Ti-C - C-Ti geometry; (v) the order for their ionization potentials is Ti2C2 @ C78 < Hf2C2 @ C78 < Zr2C2 @ C78, whereas their EAs follow the order: Ti2C2 @ C78 < Hf2C2 @ C78 approximately Zr2C2 @ C78. The predicted redox properties of these endofullerenes suggest that Zr2C2 @ C78 is synthetically as approachable as Hf2C2 @ C78.  相似文献   

13.
用 Sm_2O_3制备了甲基丙烯酸钐和辛酸钐。通过添加或交联制得了含 Sm 的甲基丙烯酸和甲基丙烯酸甲酯共聚物。测定了 Sm 盐的元素分析、IR、TG、DTA 和它们在溶液中的荧光性质。研究了含 Sm聚合物的力学性能和荧光性质。  相似文献   

14.
电致发光材料MGa2S4:Ce的合成及其发光特性   总被引:1,自引:0,他引:1  
用固相反应法制备CaS,SrS,gA2SE及Ce2S3,进而合成了MGa2S4:Ce(M=Ca,Sr)电致发光材料,CaGa2S4和SrGa2S4同属D^242h空间群中斜方晶系结构。  相似文献   

15.
Research on flexible electronics has grown exponentially over the last decade. Researchers around the globe are developing a wide range of flexible systems, including displays [1, 2], sensors [3-5], RFID tags [6, 7] and other similar devices [8]. Innovations in materials have been key to the increased research success in this field of research in recent years [9]. Transistors, interconnects, memory cells, passive components and other assorted devices all have challenging material demands for flexible electronics to become a reality. Nanomaterials of various kinds have been found to represent a tremendously powerful tool, with nanoparticles [10], nanotubes, nanowires [3, 11] and engineered organic molecules [12, 13] contributing to the realization of high-performance semiconductors, dielectrics and conductors for flexible electronics applications. Nanomaterials offer tunability in terms of performance, solution processability and processing temperature requirements, which makes them very attractive as building blocks for flexible electronic systems. Indeed, such systems represent some of the largest families of commercially produced nanomaterials today, and numerous commercial products based on nanoparticle formulations are widely available. This special issue focuses on the rapidly blossoming field of flexible electronics, with a particular focus on the use of nanotechnology to facilitate flexible electronic materials, processes, devices and systems. Contributions to the issue describe the development of nanomaterials-including nanoparticles, nanotubes, nanowires and carbon-based thin films-for use in conductors, transparent electrodes, semiconductors and dielectrics. The articles feature innovations in nanomanufacturing and novel materials, as well as the application of these technologies to advanced flexible devices and systems. As flexible electronics systems move rapidly towards successful commercial deployment, it is extremely likely that they will exploit nanomaterials as building blocks. Developments in the field will help to leverage the power of these materials to realize novel functionalities in flexible form factors. This special issue provides a view of the state of the art in these technologies, and gives a vision of the coming innovations that will make flexible electronics a reality. References [1] Gelinck G H et al 2004 Flexible active-matrix displays and shift registers based on solution-processed organic transistors Nature Mater. 3 106-10 [2] Zhou L, Wanga A, Wu S C, Sun J, Park S and Jackson T N 2006 All-organic active matrix flexible display Appl. Phys. Lett. 88 083502 [3] Fan Z, Ho J C, Jacobson Z A, Razavi H and Javey A 2008 Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry Proc. Natl Acad. Sci. 105 11066 [4] Sekitani T et al 2009 Organic nonvolatile memory transistors for flexible sensor arrays Science 326 1516-9 [5] Mannsfeld S C B et al 2010 Highly sensitive flexible pressure sensors with microstructured rubber dielectric layers Nature Mater. 9 859-64 [6]Subramanian V, Frechet J M J, Chang P C, Huang D C, Lee J B, Molesa S E, Murphy A R, Redinger D R and Volkman S K 2005 Progress toward development of all-printed RFID tags: materials, processes, and devices Proc. IEEE 93 1330-8 [7] Jung M et al 2010 All-printed and roll-to-roll-printable 13.56 MHz-operated 1 bit RF tag on plastic foils IEEE Trans. Electron. Devices 57 571-80 [8] Kim D-H et al 2011 Epidermal electronics Science 333 838-43 [9] Wagner S and Bauer S 2012 Materials for stretchable electronics MRS Bull. 37 207 [10] Grouchko M, Kamyshny A and Magdassi S 2009 Formation of air-stable copper-silver core-shell nanoparticles for inkjet printing J. Mater. Chem. 19 3057-62 [11] Takei K et al 2010 Nanowire active-matrix circuitry for low-voltage macroscale artificial skin Nature Mater. 9 821-6 [12] Sekitani T, Zschieschang U, Klauk H and Someya T 2010 Flexible organic transistors and circuits with extreme bending stability Nature Mater. 9 1015-22 [13] Park S, Wang G, Cho B, Kim Y, Song S, Ji Y, Yoon M and Lee T 2012 Flexible molecular-scale electronic devices Nature Nanotechnol. 7 438-42.  相似文献   

16.
用透射电镜研究了三种高耐磨钢在二次硬化峰附近回火时碳化物的沉淀,结果表明:耐磨钢产生二次硬化的特殊碳化物为MC+M2C,它们和基体间满足如下取向关系:〔111〕MC//〔011〕α,(110)MC//(100)α;〔001〕MC//〔011〕α,(200)MC//(200)α;〔0111〕M2C//〔001〕α,(2110)M2C//(200)α。在540℃回火时,Si能抑制耐磨钢中M3C碳化物的  相似文献   

17.
This paper presents the solid-state electrical conductance properties of a series of complex bimetallic salts of the form [M(N–N)3][Cu(MNT)2] (M=Fe(II), Co(II), Ni(II), or Cd(II); N–N=1,10-phenanthroline (phen) or ethylenediamine (en); MNT2−=maleonitriledithiolate) and bridged heterobimetallic complexes Ag2[Cu(MNT)2] and Hg[Cu(MNT)2] that have been prepared by treatment of complex salt Na2[Cu(MNT)2] (generated in situ) with one equivalent of cationic complexes [M(N–N)3]X2 or Hg(CH3COO)2 and two-equivalent of AgNO3 in aqueous–methanol mixture and characterised by relevant spectroscopies (IR, EPR, UV-Visible) as well as by powder XRD spectra. Solution conductivity measurements in 10−3 M DMSO solution revealed 1:1 electrolytic behaviour of the bimetallic salts. Diamagnetism together with powder EPR spectra for Ag2[Cu(MNT)2] and Hg[Cu(MNT)2] show strong antiferromagnetic interaction between two adjacent copper(II) centers at room temperature. Majority of the complexes exhibited compressed pellet σrt in 8.19×10−11 to 5.37×10−7 S cm−1 range and show semiconductivity over the 303–383 K temperature range. Conductivity of both coordination polymers are appreciably higher compared to the bimetallic salts. For the salts [Co(phen)3][Cu(MNT)2], [Ni(phen)3][Cu(MNT)2] and bridged complexes Ag2[Cu(MNT)2] and Hg[Cu(MNT)2] the conductivity remarkably increases, i.e., 102 to 103 order of magnitude at elevated temperature showing some sort of phase transformation producing S⋯S intermolecular contact.  相似文献   

18.
钻柱纵向和扭转振动分析   总被引:18,自引:0,他引:18  
介绍钻柱的振动状态和产生振动的原因。针对钻柱的纵向振动,分别建立了力激励法和位移激励法的数学模型;计算结果表明,力激励法与位移激励法求得的消振转速相反,即力激励法的消振转速恰恰是位移激励法的共振转速,反之亦然;传统多以力激励为边界条件来研究钻柱纵向振动的频率响应,并指导现场消振作业的,这样给出的最佳消振转速,恰恰是共振转速;在钻井作业中,钻头的纵向跳动比纵向受力的变化要稳定得多,钻柱的动负荷比动位移重要得多,应该用位移激励法研究钻柱的纵向振动问题。针对钻柱的扭转振动问题,分别建立了扭矩激励法和转角激励法的钻柱扭转振动数学模型;证明用转角激励法来研究钻柱的扭转振动更符合实际。  相似文献   

19.
The compounds of general formula [ML2](ClO4)2 [M = Cu(II), Ni(II), Co(II)]; L = diethyl 3-pyridylmethyl[N-(butyl)amino]phosphonate (3-pmape) or diethyl 4-pyridylmethyl[N-(butyl)amino]phosphonate (4-pmape) were prepared. The new complexes were identified and characterized by elemental analysis, infrared, electronic spectral studies and magnetic measurements. The complexes are sixcoordinate. Metal ions are octahedrally surrounded by two pyridine and two amine nitrogens, and two oxygens of the phosphoryl groups. The results of the magnetic studies suggest polymeric chain structure of the above complexes and indicate weak antiferromagnetic interaction between the magnetic centers. The magnetic behavior of Co(II) complexes is characteristic for cobalt(II) system with an important orbital contribution via spin-orbit coupling.  相似文献   

20.
In this investigation, attempts have been made to study the inhibitive effect of N,N′-ortho-phenylen acetyle acetone imine (S1) and 4-[(3-{[1-(2-hydroxy phenyl) methylidene] amino} propyl) ethanemidol]-1,3-benzenediol (S2) in the concentration range of 50–400 ppm for mild steel with two different microstructures resulted from two different heat treatments (annealed (A) and quenched and tempered (Q&T)) in 1 M hydrochloric acid solution. Both Schiff bases acted as a mixed type inhibitors. The S1 inhibitor for both microstructures showed better inhibition efficiency than S2. The A samples indicated slightly less corrosion than Q&T samples in 1 M HCl solution in absence of inhibitor due to the formation of duplex γ-Fe2O3/Fe3O4.  相似文献   

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