基于CMOS模拟开关实现平衡混频器

详细介绍了有源单平衡混频器的电路组成,分析了有源平衡混频器的工作原理。基于CMOS模拟开关设计实现了一种(低功耗、高线性度的)开关平衡混频器,最后对混频器的指标进行了测量和分析。测试结果表明(在3.3V电源电压下,消耗电流小于10mA,射频输入信号)在60～110MHz频带范围内,(本振信号+10dBm时)插入损耗小于7dB,波动小于1dB,输入P1dB压缩点大于13dBm。     

新颖的可增强功率处理能力的X-波段RF MEMS开关

介绍了一种可用于射频系统中的微电子机械开关,通过新颖的三层板结构解决了高功率带来的自执行和自锁效应,并且消除了传统三层板结构引入的应力.采用阻抗匹配的方法提高开关结构的射频性能.利用CoventorWare软件模拟了开关结构的机电特性,利用HFSS软件匹配了开关结构并且模拟了射频性能.开关结构的吸合(pull-in)电压模拟结果为26V.在整个X波段,开关“开“态时的回波损耗低于-28dB,插入损耗小于0.25dB;“关“态时的隔离度大于28dB.     

基于RF开关矩阵的雷达双通道测试平台

雷达性能测试贯穿于雷达系统的研发和使用阶段,针对目前雷达测试平台存在集成化、稳定性不足的情况,设计了一种基于射频(RF)开关矩阵的雷达性能双通道集成测试平台;首先,基于RF开关矩阵和通用仪器设计双通道测试结构;继而开发程控软件,同步控制开关矩阵的切换和各项仪器的数据采集,实现自动化雷达性能测试;该平台校准面插损和测试面插损之间的误差远小于传统方法,对雷达指标的测试精度可达到0.1 dB以上;且通过自动化的信号采集、信号处理及数据分析,实现了对雷达设备的高精度、高效率自动化性能测试。     

开关线型移相器的设计和实现

本文主要介绍了开关线型移相器的设计方法和实测结果，重点介绍了PIN二极管的物性，PIN二极管开关的设计，并使用了微带线设计技术。     

基于CPLD的开关电容组式跟踪滤波器设计与实现

针对大动态范围高灵敏度短波接收机射频前端信号处理需要,提出并实现了一种基于CPLD的开关电容组式跟踪滤波器与变容二极管电调谐滤波器串联方案,并对该滤波器性能进行了评估.实验结果表明,该滤波器可以工作于1MHz～30 MHz频段,带宽易调,设计简单,且具有稳定的带宽和很高的温度稳定性.实测的滤波器3 dB带宽为300 kHz～700 kHz,Q值为11.8 dB～25 dB,通带增益为2.5～4.5,能很好地满足接收机设计指标.     

基于共平面波导的可调低通滤波器的设计和制作

介绍了一种使用多触点MEMS开关实现的新型可调微波MEMS低通滤波器,应用MEMS制作工艺在石英衬底上实现滤波器结构.滤波器基于慢波共平面波导周期性结构,具有尺寸小、插损低、可与单片微波集成电路工艺兼容等优点.滤波器截止频率的大小取决于MEMS开关的状态.实验结果表明,当MEMS开关受到激励时,低通滤波器的3-dB截止频率从12.5GHz转换至6.1GHz,带内纹波小于0.5dB,带外抑制大于40dB,开关的驱动电压在25V左右.     

一种超宽带MEMS开关的研制

MEMS射频器件,特别是超宽带器件,对其中的射频器件提出了宽带指标的要求。以此为背景,在理论分析的基础上设计了一种应用于12.5 GHz~50 GHz频带的超宽带双膜桥式MEMS开关,该开关具备低损耗、高隔离度等特点,文中给出了开关的制备工艺,并进行流水完成了芯片制备。经测试,该开关在设计频段内,回波损耗优于20 dB,插入损耗典型值0.3 dB@12.5~35 GHz,优于0.5 dB@45 GHz,隔离度全频段优于20 dB,驱动电压在45 V~55 V之间。     

基于互补结构的有源FSS传输特性

研究了由方型缝隙单元和十字贴片组成的互补结构有源频率选择表面(Frequency-selective surface,FSS)的传输特性.通过HFSS仿真和实物测试,给出了PIN管不同工作状态下的插入损耗和插入相移,研究了该结构的角度稳定性.数据结果表明,通过改变PIN管的工作状态,在谐振点处插损有17 dB的动态变化范围,从而为有源FSS天线罩的设计提供参考和借鉴.     

激光测速雷达射频前端仿真设计

根据相干激光测速雷达系统对信号采集前端的要求,确定了适用于激光测速雷达系统的射频前端系统,并采用自顶向下的设计方法,借助Agilent公司的ADS2008软件,设计了中心频率为55 MHz,工作带宽为22 MHz,增益在50 dB以上,噪声小于2 dB的射频前端,重点对低噪声放大器(LNA)、抗混叠滤波器和自动增益控制系统(AGC)进行了设计、仿真及优化。     

基于多比特带通△∑调制器的射频数字功放

为提高射频功放的线性和效率,提出了一种基于多比特带通△∑调制器(BPDSM)的射频数字功放结构并给出了BPDSM的设计方法。针对调制器CRFB实现结构中关键路径过长的问题,利用重定时、流水线和超前计算等技术对实现结构进行了改进,将BPDSM的实现速率提高至200 MHz。提出了多电平开关功放的电路结构,将多个具有独立电源的开关功放单元进行串联,实现了对BPDSM输出多比特脉冲信号的高效开关放大。最后,利用FPGA器件及分立元件实现了频率为30 MHz的数字功放,输出功率为10 W时效率达到60%。     

串联电容式RF MEMS开关设计与制造研究

介绍了一种串联电容式RF MEMS开关的设计与制造。所设计的串联电容式RF MEMS开关利用薄膜淀积中产生的内应力使MEMS桥膜向上发生翘曲,从而提高所设计的开关的隔离度,克服了串联电容式RF MEMS开关通常只有在1GHz以下才能获得较高隔离度的缺点。其工艺与并联电容式RF MEMS开关完全相同,解决了并联电容式RF MEMS开关不能应用于低频段(<10GHz)的问题。其插入损耗为-0.88dB@3GHz,在6GHz以上,插入损耗为-0.5dB;隔离度为-33.5dB@900MHz、-24dB@3GH和-20dB@5GHz,适合于3~5GHz频段的应用。     

High power GaN‐HEMT SPDT switches for microwave applications

In this article, the design, fabrication, and on‐wafer test of X‐Band and 2–18 GHz wideband high‐power SPDT MMIC switches in AlGaN/GaN technology are presented. The switches have demonstrated state‐of‐the‐art performance and RF fabrication yield better than 65%. Linear and power measurements for different control voltages have been reported and an explanation of the dependence of the power performances on the control voltage is given. In particular, the X‐band switch exhibits a 0.4 dB compression level at 10 GHz when driven by a 38 dBm input signal. The wideband switch shows a compression level of 1 dB at an input drive higher than 38 dBm across the entire bandwidth. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2009.     

A 60‐GHz single‐pole‐single‐throw switch in 65‐nm bulk CMOS

A single‐pole‐single‐throw (SPST) switch in a π‐network topology is designed in a 1.2‐V 65‐nm bulk CMOS RF process for millimeter‐wave applications in the 60‐GHz band from 57 to 66 GHz. The SPST switch with an active chip area of only 96 μm × 140 μm achieves the measured 11‐dB return loss, 1.6‐dB insertion loss, and 27.9‐dB isolation at 60 GHz. The SPST switch also shows the simulated power‐handling capability of 11.4 dBm and switching speed of 1 ns at 60 GHz. These results clearly demonstrate that the SPST switch in CMOS rivals the performance of SPST switches in GaAs and therefore has potential to be used in highly‐integrated 60‐GHz CMOS radios. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.     

Design and simulation of a thermally actuated MEMS switch for microwave circuits

The design, modeling, and optimization of a novel, thermally actuated CMOS‐MEMS switch are presented in this article. This series capacitive MEMS switch solves the substrate loss and down‐state capacitance degradation problems commonly plaguing MEMS switches. The switch uses finger structure for capacitive coupling. The vertical bending characteristic of bimorph cantilever beams under different temperatures is utilized to turn the switch on and off. A set of electrical, mechanical, and thermal models is established, and cross‐domain electro‐thermo‐mechanical simulations are performed to optimize the design parameters of the switch. The fabrication of the switch is completely CMOS‐process compatible. The design is fabricated using the AMI 0.6 μm CMOS process and a maskless reactive‐ion etching process. The measured results show the insertion loss and isolation are 1.67 and 33 dB, respectively, at 5.4 GHz, and 0.36 and 23 dB at 10 GHz. The actuation voltage is 25 V and the power consumption is 480 mW. This switch has a vast number of applications in the RF/microwave field, such as configurable voltage control oscillators, filters, and configurable matching networks. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2009.     

MEMS capacitive series switch fabricated using PCB technology

In this article, an RF MEMS capacitive series switch fabricated using printed circuit processing techniques is discussed. Design, modeling, fabrication, and characterization of the CPW series switch are presented. An example CPW series capacitive switch with insertion loss less than 0.5 dB in the frequency range of 13–18 GHz and isolation better than 10 dB up to 18 GHz is discussed. The switch provides a minimum insertion loss of about 0.1 dB at the self‐resonance frequency of 16 GHz and a maximum isolation of about 42 dB at 1 GHz. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.     

High isolation microstrip GaN‐HEMT Single‐FET Switch

In this contribution an analytical approach to the design of high‐isolation microwave transmission line‐resonated switches is presented. Simulated and measured performance of a GaN HEMT single‐FET switch cell topology and the one of a complete SPDT using the proposed approach are presented to demonstrate the approach feasibility and effectiveness. The resulting SPDT, operating at X Band, is featured by 1 dB insertion loss, isolation better than 37 dB all over the operating bandwidth and a power handling capability higher than 39 dBm. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010.     

RF MEMS悬臂梁开关的设计与仿真

利用有限元软件HFSS和ANSYS系统研究了串联MEMS开关的微波性能和力学性能与其结构参数之间的关系,并在此基础上优化出悬臂梁开关的几何结构参数,设计了RF MEMS开关,实验表明：在外施电压为10V左右时,悬臂梁的挠度可达3μm左右,5GHz时,回波损耗小于0．2dB,隔离度大于35dB。     

Frequency reconfigurable RF circuits using photoconducting switches

Designs for a frequency switchable dual‐band branch‐line coupler and a reconfigurable S‐band power amplifier input matching network with photoconducting switches are presented. Frequency switching is achieved by increasing the power of the laser applied to the highly resistive silicon wafer and changing the properties of silicon under optical illumination. The advantages of this approach are high‐speed switching, electromagnetic transparency (no interference), and thermal and electrical isolation between the device and the control circuit. A branch‐line coupler frequency shift of 35% and 10% has been achieved from all switches off to all switches on in lower (900 MHz) and upper (1800 MHz) frequency bands, respectively. Frequency switchable class AB power amplifier with silicon switch in the input matching circuit has obtained the frequency tuning range of 2.5–3.5 GHz with no significant loss in efficiency and linearity. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010.     

基于小信号S参数的MOSFET射频功率放大器设计

介绍了如何利用场效应管的小信号散射(S)参数设计射频功率放大器,并采用此设计方法,选用场效应管,设计了一种工作在160 MHz频段的金属氧化物半导体场效应管(MOSFET)功率放大器.在工作频段内,功率放大器增益大于23 dB,输入端口的匹配网络的回波损耗S11优于-19 dB.实例证明:该设计方法仿真简单,易于实现,具有重要的工程应用价值.