共查询到19条相似文献,搜索用时 187 毫秒
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硅牌键合技术的研究进展 总被引:2,自引:0,他引:2
硅片键合技术是指通过化学和物理作用将硅片与硅片、硅片与玻璃或其它材料紧密地结合起来的方法.硅片键合往往与表面硅加工和体硅加工相结合,用在MEMS的加工工艺中.常见的硅片键合技术包括金硅共熔键合、硅/玻璃静电键合、硅/硅直接键合以及玻璃焊料烧结等.文中将讨论这些键合技术的原理、工艺及优缺点. 相似文献
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硅片键合技术的研究进展 总被引:8,自引:0,他引:8
硅片键合技术是指通过化学和物理作用将硅片与硅片,硅片与玻璃或其它材料紧密地结合起来的方法,硅片键合往往与表面硅加工和体硅加工相结合,用在MEMS的加工工艺中,常见的硅片键合技术包括金硅共熔键合,硅/玻璃静电键合,硅/硅直接键合以及玻璃焊料烧结等,文中将讨论这些键合技术的原理,工艺及优缺点。 相似文献
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为了避免微加速度计在工作过程中因为共振导致结构损坏,需要在结构中合理设计阻尼.设计了一个复合量程压阻式微加速度计,为了使结构中各个传感器具有较好的阻尼参数,通过静电键合在硅结构层下制作一玻璃层.根据Reynolds方程,可知当硅-玻璃静电键合间距d=2.25μm时,复合量程微加速度计中各个传感器可得到较好的阻尼比. 相似文献
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利用MEMS(微机电系统)工艺中的扩散,刻蚀,氧化,金属溅射等工艺制备出SOI高温压力敏感芯片,并通过静电键合工艺在SOI芯片背面和玻璃间形成真空参考腔,最后通过引线键合工艺完成敏感芯片与外部设备的电气连接.对封装的敏感芯片进行高温下的加压测试,高温压力测试结果表明,在21℃(常温)至300℃的温度范围内,传感器敏感芯片可在压力量程内正常工作,传感器敏感芯片的线性度从0.9 985下降为0.9 865,控制在较小的范围内.高温压力下的性能测试结果表明,该压力传感器可用于300℃恶劣环境下的压力测量,其高温下的稳定性能为压阻式高温压力芯片的研制提供了参考. 相似文献
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金丝键合通常由金丝球超声键合完成。短尾是金丝球键合过程中一个典型的失效模式,详细分析了金丝球键合过程中第二点键合的四个关键步骤,分析了第二点键合形貌形成过程,分别研究了键合第二点各个区域与键合劈刀的位置关系,在此基础上详细分析了造成第二点键合金丝短尾的主要因素和机理,提出劈刀上升前后两种主要的短尾模式,得出键合参数是影响键合质量和键合强度的关键因素,给出了优化改进措施,提出通过降低超声功率和压力,或者通过优化原材料、劈刀,以便使用较低的工艺参数就可以完成键合,解决第二点键合短尾问题。 相似文献
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Robin Joyce Kulwant Singh Himani Sharma Soney Varghese J. Akhtar 《Microsystem Technologies》2014,20(6):1153-1158
Anodic bonding of Pyrex 7740 glass to bare silicon and oxidized silicon wafer is presented for micro electro mechanical systems (MEMS) device packaging. Experimentally it has been observed that anodic bonding process parameters are varying with different 3D structures. The effects of bonding temperature and voltage are discussed by keeping the temperature constant and varying the voltage. The bonding interface has been studied by scanning electron microscope observations. Effective parameters for MEMS structure such as bonding temperature, voltage has been discussed. 相似文献
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两电极多层阳极键合实验研究 总被引:1,自引:0,他引:1
介绍了用2个电极通过一次电极反接的方式实现多层样片之间阳极键合的操作工艺和键合机理,并以玻璃-硅-玻璃三层结构为例对其进行了实验研究。结果显示:多余的玻璃对第一次键合过程的电流特性影响不大,而第一次键合的玻璃对第二次键合电流产生显著的影响,电流出现不规则的突变。而且,在第二次键合过程中,第一次键合的玻璃在键合面上会出现由于钠元素积聚而产生的黄褐色斑点。拉伸强度实验的结果表明:第二次键合过程中在第一次键合面形成的反向电压会减弱键合的强度;通过合理选择键合参数可以得到满足MEMS封装要求的键合强度。 相似文献
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In this paper a test structure is introduced, which allows the evaluation of the quality of an anodic bond interface in terms of surface energy. It is based on the creation of small non-bonded areas in the vicinity of small steps in the bond interface. Using finite element analysis simulations it was possible to calculate the surface energy of the monitored bonding processes. The test structure was used to investigate the influence of anodic bonding parameters (temperature and voltage) on the surface energy. 相似文献
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Other than temperature and voltage, load plays a key role in anodic bonding process. In this paper we present a new design of top electrode (cathode) for anodic bonding machine by which the bonding time has been reduced up to 30 % in case of bare silicon wafer at ?400 V and approximate 52 % in case of oxidized silicon wafer with Pyrex glass bonding at ?800 V. Experimentally it has been observed there was no bonding in oxidized silicon wafer with Pyrex glass up to ?600 V by using standard design while it has been successfully bonded at same voltage (?600 V) by using new design. 相似文献
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In this paper a novel process to bond and, at the same time, to electrically connect a silicon wafer to a glass wafer is presented. It consists of a low temperature anodic bonding process between silicon and glass by using a glass wafer with etched channels in order to contain metal tracks. The glass-to-silicon anodic bonding process at low temperatures (not exceeding 300°C) assures a strong mechanical link (Berthold et al. in Transducers 1999, June:7–10, 1999). The electrical contacts between the metal pads on the backside of a silicon wafer and the metal pads on the glass wafer are achieved by sintering and diffusion of metals due to a kind of thermo compression bonding. This bonding method permits a high vertical control due to a well-controlled etching of the cavity depth and to the thickness precision of both metallization (pads on silicon wafers and metal tracks on glass wafer). This IC-processing compatible approach opens up the way to a new electrical connection concept keeping, at the same time, a strong mechanical bond between glass and silicon wafers for an easier fabrication of a more complex micro-system. 相似文献