Experimental characterization of the bipolar effect on P-hit single-event transients in 65 nm twin-well and triple-well CMOS technologies

Single-event charge collection is controlled by drift, diffusion and the bipolar effect. Previous work has established that the bipolar effect is significant in the p-type metal-oxide-semiconductor field-effect transistor (PMOS) in 90 nm technology and above. However, the consequences of the bipolar effect on P-hit single-event transients have still not completely been characterized in 65 nm technology. In this paper, characterization of the consequences of the bipolar effect on P-hit single-event transients is performed by heavy ion experiments in both 65 nm twin-well and triple-well complementary metal-oxide-semiconductor (CMOS) technologies. Two inverter chains with clever layout structures are explored for the characterization. Ge (linear energy transfer (LET) = 37.4 MeV cm²/mg) and Ti (LET = 22.2 MeV cm²/mg) particles are also employed. The experimental results show that with Ge (Ti) exposure, the average pulse reduction is 49 ps (45 ps) in triple-well CMOS technology and 42 ps (32 ps) in twin-well CMOS technology when the bipolar effect is efficiently mitigated. This characterization will provide an important reference for radiation hardening integrated circuit design.     

SYNTHESIS AND CHARACTERIZATION OF A NEW NIOBATE: Sr6Ti7Nb9O42

A new niobate Sr_6Ti_7Nb_9O_(42) was synthesized for the first time by solid state reaction in SrO-TiO_2Nb_2O_5 ternary system. The new compound was characterized by EPMA, XRD, SEM and DTA. The X-ray owder diffraction data of Sr_6Ti_7Nb_9O_(42) were firstly reported in the paper. Sr_6Ti_7Nb_9O_(42) crystallizes the hexagonal system with unit cell parameters a=8.9991(4)(?), c=11.5118(9)(?), and space group P6_3/mcm(193), z=1. The calculated and measured densities are 4.783 g/cm~3 and 4.764 g/cm~3, respectively.     

Ferroelectric properties of Bi_(3.25)La_(0.75)Ti_(3)O_(12) thin films prepared by sol-gel method

The Bi3.25La0.75Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method. The structure and morphology of the films were characterized us-ing X-ray diffraction and atomic force microscopy. The thin films showed a perov- skite phase and dense microstructure. The 2Pr and 2Vc of the Bi3.25La0.75Ti3O12 thin films annealed at 700℃ were 18.6 μC/cm2 and 4.1 V, respectively, under an applied voltage 10 V. After the switching of 1×1010 cycles, the Pr value decreased to 90% of its pre-fatigue values. The films showed good insulating behavior according to the test of leakage current. The dielectric constant and the dissipation factor of the Bi3.25La0.75Ti3O12 thin films were about 176 and 0.046 at 1 kHz, respectively.     

SYNTHESIS AND X-RAY POWDER STUDY OF A NEW COMPOUND:Ba_6Ti_7Nb_9O_(42)

A new compound Ba6Ti7Nb9O42 was prepared for the first time by solid state reaction in BaO-TiO2-Nb2O5, ternary system. The X-ray powder diffraction data of the title compound was determined. Ba6Ti7Nb9O42 crystallizes in the hexagonal system -with unit cell parameters a=9.0527(4) A,c=11.790(1) A,and space group P63/mcm(193),z=1. The calculated and measured densities are 5. 293 g/cm3 and 5.285 g/cm3, respectively.     

Ethylene Polymerization by a Novel Dinuclear Heteroligated Titanium Complex with the Ligand of (Salicylaldiminato)(β-enaminoketonato)

The condensation of acetylacetone (CH3COCH2COCH3) with benzdine(H2N-C6H4-C6H4-NH2) yielded diimine ligand 1 [HOC(Me)C(H)(Me)C=N(p-C6H4)(C6H4-p)N=C(Me)C(H)C(Me)OH)],which was converted into sodium salts.And then the sodium salts reacted with monosalicylaldiminato titanium complex 2{[3,5-di-Bu'-240)C6H2CHN(PH)]TiCl3(THF)} in dried dichloromethane to give a new benzdine-bridged binuclear complex 3{[3,5-di-Bu'-2-(O)C6H2CHN(PH)]2[OC(Me)C(H)(Me)C=N(p-C6H4)-(C6H4-p)N=C(Me)C(H)C(Me)]Ti2Cl4}.The complex 3 was characterized by 1HNMR and elemental analysis.In the presence of MAO(methylaluminoxane),the complex 3 in toluene was effective to catalyze polymerization,affording moderately high catalytic high temperature gel permeation chromatography (GPC) curve of polyethylene obtained revealed a single peak,but the molecular weight distribution (MWD=3.21) is obviously broader than that of the similar mononuclear titanium complex.The melting points of the obtained polyethylene reaches 138 ℃,indicating that the polyethylene is of high crystallinity.     

锂离子电池负极材料 Na2Li2Ti6O14的嵌脱锂过程动力学研究

为了研究钛酸钠锂(Na2Li2Ti6O14)负极材料嵌脱锂的动力学行为,用溶胶-凝胶法合成 Na2Li2Ti6O14负极材料,采用 X 射线衍射法(XRD)和电子显微镜(SEM)分别对材料进行物相分析和微观形貌的观察.采用恒流充放电测试、循环伏安法(CV)和恒电流间歇滴定法(GITT)研究了 Na2Li2Ti6O14的电化学性能和嵌脱锂过程动力学.研究结果表明,制备的 Na2Li2Ti6O14材料纯度高,结晶度良好,循环稳定性好;由不同扫描速率的循环伏安法测出的 Na2Li2Ti6O14中锂离子在氧化、还原峰对应的化学扩散系数 Da和 Dc分别为7.3×10-11和7.8×10-11cm2/s;由恒电流间歇滴定技术测得的锂离子在 Na2Li2Ti6O14电极中的扩散系数为10-11~10-8cm2/s.     

[NH_3CH_2CH(NH_3)CH_3]_2·[Ge_9O_(18)(OH)_4]·H_2O的溶剂热法合成与结构分析

用溶剂热法合成出一个新的开放骨架锗酸盐[NH3CH2CH(NH3)CH3]2.[Ge9O18(OH)4].H2O,并通过FTIR和元素分析对其进行了表征。单晶X-射线衍射结果表明,该化合物的8-MR、10-MR交叉孔道的三维骨架是由Ge9O22团簇构成的;质子化的有机铵分子被包围在孔道中,并且通过氢键与骨架相连;水分子处在2个沿着b轴的相邻Ge9O22团簇之间,并且被4个沿着[101]和[10-1]方向的质子化的1,2-丙二胺包围。     

溶胶-凝胶法制备（Nd,Bi）_4Ti_3O_（12）铁电薄膜

采用溶胶-凝胶法在Pt/Ti/SiO2/Si基片上制备了（Nd,Bi）4Ti3O12薄膜。将薄膜于空气中分别进行每1层、每2层、每3层500℃预退火10 min,最后于氮气氛中680℃退火30 min。结果表明：预退火工艺对薄膜的结构和铁电性能都有影响：每一层预退火处理的薄膜具有较大的剩余极化值和最小的矫顽场（2Pr=47.8μC/cm2,2Ec=254 kV/cm）。所有薄膜都呈现良好的抗疲劳特性。     

TiO2/γ-Al2O3与铁屑三维电极光电催化研究

以微孤氧化法制备的钛基TiO2/Ti膜为阳极,以钛片为阴极,TiO2/γ-Al2O3与铁屑粒子组合作粒子电极,以Na2SO4为支持电解质,以亚甲基蓝为处理目标物,结合20W紫外灯和稳压电源组成三维电极光电催化体系,研究三维电极体系对光电催化的影响.实验结果表明:粒子电极5g铁屑和2g三层膜球状TiO2/γ-Al2O3粒子,亚甲基蓝溶液初始浓度为3mg/L,电源电压6V,Na2SO4电解质溶液浓度0.02mol/L,电极间距为4.5cm.三维电极光电催化3h的降解效率比传统二维电极光电催化的降解率提高了25％.     

Ti基体上形成微弧氧化膜组成和结构的研究

在甘油磷酸钙和醋酸钙电解液中采用直流电源对纯Ti进行了微弧氧化。采用微弧氧化方法所制备的氧化膜具有粗糙多孔的结构,且微孔直径随着电压的增加而增大。AES分析表明在基体与氧化膜界面发生了扩散,从基体钛到氧化膜的表面氧的浓度逐渐增大,钛的浓度逐渐减小。XPS分析表明氧化膜的组成随着所施加的微弧氧化电压而改变,微弧氧化电压为200V时TiO2、Ti2O3和TiO占Ti的原子百分比分别为72．61％、22．08％和5.31％;当微弧氧化电压为350V时氧化膜表面Ti元素只由TiO2、Ti2O3组成,且占Ti的原子百分比分别为85．48％、14．52％。     

Ti基系列阳极的制备及电解染料废水实验研究

采用热氧化法制备了Ti／PbO2、Ti／SnO2-Sb2O3／PbO2、Ti／SnO2-Sb2O3／PbO2-Cu、Ti／SnO2-Sb2O3／PbO2-Ni和Ti／SnO2-Sb2O3／PbO2-Fe5种钛基系列阳极,进行电催化氧化处理模拟染料废水酸性品红溶液的实验研究,比较了不同电极的处理效率、反应速率,同时分析了酸性品红降解过程。结果表明：相对于Ti／PbO2和Ti／SnO2—Sb2O3／PbO2阳极,金属掺杂改性电极Ti／SnO2-Sb2O3／PbO2-Fe和Ti／SnO2-Sb2O3／PbO2-Ni对酸性品红有着更好的去除效率和降解速率,而Cu掺杂电极Ti／SnO2-Sb2O3／PbO2-Cu改性效果不明显。5种电极的电催化氧化过程均符合一级动力学模型。酸性品红在Ti／SnO2-Sb2O3／PbO2-Fe阳极上电催化氧化降解过程的紫外-可见光谱图表明在电流密度75mA／cm^2、电解质Na2SO4浓度12g／L的条件下,处理100mg／L的酸性品红模拟废水,60min内其特征吸收峰消失,酸性品红基本去除,但同时生成了部分小分子中间产物。     

SOI基垂直入射Ge PIN光电探测器的研制

研制了在SOI衬底上工作于近红外波段的垂直入射GePIN光电探测器。采用低温Ge缓冲层技术,在超高真空化学气相淀积系统(UHV/CVD)上生长探测器材料。测试表明,器件的暗电流主要来源于表面漏电流,暗电流密度随着尺寸的增加而减小,在2V偏压时暗电流密度可达17.2mA/cm2;器件在波长1.31μm处的响应度高达0.22A/W,对应量子效率为20.8%。无偏压时,器件的响应光谱在1.2～1.6μm波长范围内观察到4个共振增强峰,分别位于1.25、1.35、1.45和1.55μm左右,峰值半高宽约为50nm,共振增强效应是由SOI衬底的高反射率引起的。采用传输矩阵法模拟的响应光谱与实验测量结果吻合良好。     

The Theoretical Study of O_2 Adsorption on NiTi (100) and (110) Surfaces

1　IntroductionNiTishapememoryalloyhaswidelybeenusedinmanyfieldsduetoitsexcellentmechanicalproperties ,uniqueshapememoryeffectandsuperelasticity .In 1970’s ,thegoodbiocompatibilityofNiTialloywasdiscoveredanditwasfurtherusedforvariousbiomedicalapplica tions ,suchasorthopaedicsurgery ,cardiovascularandgas trointestinalsurgery[1-4] .Thehighmechanicalpropertiesandbiocompatibilityofthebiomedicalmaterialsarenec essaryfortheirefficientuseinhumanbody .Thecorrosionresistanceofthealloyandthetoxicityo…     

Microstructure and dielectric properties of BaTi4O9(f)/0.64 BaTi4O9+0.36 BaPr2Ti4O12 composites

The microstructure, dielectric properties and chemical state of Ti element on BaTi4O9 (f)/(0. 64 BaTi4O9-0. 36BaPr2Ti4O12 ) composites sample surface were characterized by X-ray diffraction (XRD) ,Transmission electron microscopy (TEM), LCR meter method and X-ray photoelectron spectroscopy (XPS).The results show that the system is composed of BaTi4O9 and BaPr2Ti4O12 two phases. Pr ions are distributed inthe BaTi4O9 grains and the segregation of Pr ions was observed on the grain boundaries of BaTi4O9/BaTi4O9.The content of Ti3 + and Ti2+ decrease in the BPT system composites due to the addition of BaTi4O9 fibers,which improved the dielectric properties of the system. BPT10 sample with 10 % BaTi4O9 fibers, has the bestdielectric properties in the system, its εr =64,tan δ = 1×10-4(at 1 MHz) , and it may be a potential candi-date for microwave dielectric ceramics.     

基于PZT单晶纳米线的柔性透明能量收集器研究

采用水热法制备了锆钛酸铅(PZT)纳米线并制作了一种压电式柔性透明能量收集器,然后对其能量收集特性进行了研究.PZT纳米线呈单晶结构,能量收集器可见光透过率约为60%,可实现大的机械形变.振动测试结果表明,该器件的最大开路输出电压约为2.6V,压强灵敏度约为0.035V/kPa,最大交流(AC)均方根输出电压约为0.8V,最大AC输出功率密度约为57.5nW/cm~2,这表明该器件在机械振动能量收集发电和传感方面具有良好的应用前景.     

一个新型氰根桥联铁(Ⅲ)一铜(Ⅱ)大环配位聚合物的合成和晶体结构

合成了新型大环配位聚合物[Cu(L)]2[Fe2(H2O)(CN)10]·8H2O(L=1,8-二正丙基-1,3,6,8,10,13-六氮杂-14-冠-4),用元素分析、ICP分析、IR光谱对配合物进行了表征,X-射线衍射测定了其单晶结构．结果表明,该晶体属正交晶系,Pddd空间群,a=1．8310(4)nm,b=2．6060(5)nm,c=3．1680(6)nm,α=β=γ=90°,V=15.116(5)nm3,Z=8,dc=1．085 g/cm3,F(000)=5200,R1=0．1024,WR2=0．2657,GOF(F2)=0．992．该配合物结构中氰根桥联铁(Ⅲ)和铜(Ⅱ),形成Fe-CN-Cu-NC-Fe－维链,链与链之间经由Fe-O(H2O)-Fe而相互联结,形成相互交叉的网状结构．铁和铜均形成6配位畸变8面体构型．     

Effect of La Doping on Microstructure and Ferroelectric Properties of Bi4Ti3O12 Thin Films Prepared by Sol-gel Method

The Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr (remanent polarization) value of Bi3.25La0.75Ti3O12 thin films is 18.6 Μc/cm2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.25La0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.     

Kinetics of photoelectrocatalytic degradation of endocrine disrupting chemicals using sulfur-doped TiO2 /Ti photoelectrodes

In this study,sulfur-doped TiO2 /Ti photoelectrodes were prepared by anodization. The morphology, crystalline structure,composition of sulfur-doped TiO2 /Ti film and light absorption property were examined by SEM,XRD,XRF,XPS and UV/VIS respectively. Dimethyl phthalate( DMP) ,one kind of environmental disrupting chemicals( EDCs) ,was degraded by the optimized photoelectrodes. Power of xenon light,initial concentration of DMP,photoelectrocatalytic( PEC) area of photoelectrode and bias were investigated in the study on kinetics of PEC degradation of DMP. Hence,this study concluded that the optimum conditions were power of xenon light 150 W,initial concentration of DMP 1 mg/L,PEC area of sulfur-doped TiO2 /Ti photoelectrode 10 cm2,bias 1. 3 V in the PEC reaction system.     

Optimal use of mobile cooling units in a deep-level gold mine

The South African gold mining sector remains a significant contributor to the country's economy. Facing several challenges that hinder the realisation of South Africa's full mineral potential, the sector's sustainability and profitability can be enhanced through implementing operational improvement measures.Mobile cooling units(MCUs) were identified as a potential focus area for operational improvement.MCUs are used as tertiary or in-stope cooling in hot underground workings. In this paper, a method was presented to characterise the performance of existing MCUs based on three key performance indicators(KPIs), namely, the wet-bulb temperature ratio(WTR), efficiency and position. Optimisation strategies were then elected and implemented based on these KPIs. The implementation of this method in a South African gold mine attained a reduction in pumped water volumes, reduced operating costs through electricity cost savings and improvements in underground ventilation air temperatures.     

纳米晶Ba（Zr0．2Ti0．8）O3薄膜的外延生长与介电特性

用脉冲激光沉积工艺在半导体（001）SrTiO3：ω（Nb）=1．0％单晶基片上,外延生长出Ba（Zr0.2Ti0.8）O3（简称BZT）介电薄膜．在650℃原位退火10min,薄膜为（001）外延生长的晶粒．薄膜的晶化特征与表面形貌用薄膜X-ray衍射仪和原子力显微镜测量完成．BZT薄膜（002）峰的半峰宽只有0．72°,说明薄膜晶化良好;薄膜的平均晶粒为90nm,表面均方根粗糙度为4．3nm,说明薄膜表面平整．在室温、100kHz和500kV／cm条件下,BZT的最大介电常数和调谐百分率分别达到317和65％．