Methane combustion and CO oxidation on LaAl1−xMnxO3 perovskite-type oxide solid solutions

Structural, redox and catalytic deep oxidation properties of LaAl_1−xMn_xO₃ (x=0.0, 0.05, 0.1, 0.2, 0.4, 0.6, 0.8, 1.0) solid solutions prepared by the citrate method and calcined at 1073 K were investigated. XRD analysis showed that all the LaAl_1−xMn_xO₃ samples are single phase perovskite-type solid solutions. Particle sizes and surface areas (SA) are in the 280–1180 Å and 4–33 m² g⁻¹ ranges, respectively. Redox properties and the content of Mn⁴⁺ were derived from temperature programmed reduction (TPR) with H₂. Two reduction steps are observed by TPR for pure LaMnO₃, the first attributed to the reduction of Mn⁴⁺ to Mn³⁺ and the second due to complete reduction of Mn³⁺ to Mn²⁺. The presence of Al in the LaAl_1−xMn_xO₃ solid solutions produces a strong promoting effect on the Mn⁴⁺→Mn³⁺ reducibility and inhibits the further reduction to Mn²⁺. Both for methane combustion and CO oxidation all Mn-containing perovskites are much more active than LaAlO₃, so pointing to the essential role of the transition metal ion in developing highly active catalysts. Partial dilution with Al appears to enhance the specific activity of Mn sites for methane combustion.     

Probing the catalytic activity of M-N4−xOx embedded graphene for the oxygen reduction reaction by density functional theory

In this work, the detailed oxygen reduction reaction (ORR) catalytic performance of M-N_4−xO_x (M= Fe, Co, and Ni; x = 1–4) has been explored via the detailed density functional theory method. The results suggest that the formation energy of M-N_4−xO_x shows a good linear relationship with the number of doped O atoms. The adsorption manner of O₂ on M-N_4−xO_x changed from end-on (x = 1 and 2) to side-on (x = 3 and 4), and the adsorption strength gradually increased. Based on the results for binding strength of ORR intermediates and the Gibbs free energy of ORR steps on the studied catalysts, we screened out two highly active ORR catalysts, namely Co-N₃O₁ and Ni-N₂O₂, which possess very small overpotentials of 0.27 and 0.32 V, respectively. Such activities are higher than the precious Pt catalyst. Electronic structure analysis reveals one of the reasons for the higher activity of Co-N₃O₁ and Ni-N₂O₂ is that they have small energy gaps and moderate highest occupied molecular orbital energy levels. Furthermore, the results of the density of states reveal that the O doping can improve the electronic structure of the original catalyst to tune the adsorption of the ORR intermediates.     

A CO and CO2 tolerating (La0.9Ca0.1)2(Ni0.75Cu0.25)O4+d Ruddlesden-Popper membrane for oxygen separation

A series of novel dense mixed conducting ceramic membranes based on K₂NiF₄-type (La_1–xCa_x)₂ (Ni_0.75Cu_0.25)O_4+δ was successfully prepared through a sol-gel route. Their chemical compatibility, oxygen permeability, CO and CO₂ tolerance, and long-term CO₂ resistance regarding phase composition and crystal structure at different atmospheres were studied. The results show that higher Ca contents in the material lead to the formation of CaCO₃. A constant oxygen permeation flux of about 0.63 mL·min⁻¹·cm⁻² at 1173 K through a 0.65 mm thick membrane was measured for (La_0.9Ca_0.1)₂ (Ni_0.75Cu_0.25)O_4+δ, using either helium or pure CO₂ as sweep gas. Steady oxygen fluxes with no sign of deterioration of this membrane were observed with increasing CO₂ concentration. The membrane showed excellent chemical stability towards CO₂ for more than 1360 h and phase stability in presence of CO for 4 h at high temperature. In addition, this membrane did not deteriorate in a high-energy CO₂ plasma. The present work demonstrates that this (La_0.9Ca_0.1)₂(Ni_0.75Cu_0.25)O_4+δ membrane is a promising chemically robust candidate for oxygen separation applications.     

Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots

Ordering phenomena related to the self-assembly of InAs quantum dots (QD) grown on GaAs(001) substrates are experimentally investigated on different length scales. On the shortest length-scale studied here, we examine the QD morphology and observe two types of QD shapes, i.e., pyramids and domes. Pyramids are elongated along the [1–10] directions and are bounded by {137} facets, while domes have a multi-facetted shape. By changing the growth rates, we are able to control the size and size homogeneity of freestanding QDs. QDs grown by using low growth rate are characterized by larger sizes and a narrower size distribution. The homogeneity of buried QDs is measured by photoluminescence spectroscopy and can be improved by low temperature overgrowth. The overgrowth induces the formation of nanostructures on the surface. The fabrication of self-assembled nanoholes, which are used as a template to induce short-range positioning of QDs, is also investigated. The growth of closely spaced QDs (QD molecules) containing 2–6 QDs per QD molecule is discussed. Finally, the long-range positioning of self-assembled QDs, which can be achieved by the growth on patterned substrates, is demonstrated. Lateral QD replication observed during growth of three-dimensional QD crystals is reported.     

Energy transfer process and temperature-dependent photoluminescence of PbS quantum dot-doped glasses

PbS quantum dot (QD)-doped glasses were fabricated through melt-quenching method. After heat treatment schedule, uniform QDs were precipitated in the glasses and near-infrared emission covering 900-1700 nm was obtained under excitation. From photoluminescence (PL) spectra and lifetime decay curves, the whole emission band of QD-doped glasses consisted of emission from the 1S-1S state and the trap state. While using excitation with higher energy, the full width at half maximum (FWHM) of QD-doped glasses broadened because smaller QDs were excited. Energy transfer process among QDs was revealed by measuring the lifetime of different emission bands in PL spectrum and the energy transferred from smaller QDs with broader bandgap to bigger QDs with narrow bandgap. Temperature-dependent PL and the corresponding lifetime decay curves of PbS QD-doped glasses were analyzed. Temperature-dependent bandgap structure of PbS QDs was obtained by using density functional theory (DFT) calculations. The results here give deep insight into optical properties of PbS QD-doped glasses and it is beneficial to design and develop high-performance QD-based optoelectronic devices in theory.     

Silver nanoparticles enhanced luminescence and stability of CsPbBr3 perovskite quantum dots in borosilicate glass

Series of silver nanoparticles (NPs) embedded CsPbBr₃ quantum dots (QDs) glass was synthesized via the melt-quench method. Ag NPs and CsPbBr₃ QDs coexist in the TEM image of the Ag-doped glass sample. Photoluminescence (PL) spectra show that the 0.1 molar ratio Ag₂O-doped sample had a PL intensity 2.37 times than the undoped sample. This increase is generated by localized surface plasmon resonance coupling between the Ag NPs and CsPbBr₃ QDs. Excessive Ag doping weakens the PL intensity due to spectral self-absorption of the Ag NP surface plasmon resonance (SPR). Self-adsorption of SPR is detrimental to luminescence properties because it increases the amount of photogenerated charge carriers, which proceed through nonradiative relaxation pathways. In addition, stability results of Ag NP-doped-CsPbBr₃ QD glass show that they have excellent stability. This study on Ag NP-doped-CsPbBr₃ QD glass provides a new idea for the future development of perovskite QD optoelectronic devices.     

Influence of chromium doping on the electrochemical performance of the 5 V spinel cathode LiMn1.5Ni0.5O4

With an aim to improve the 5 V capacity and cyclability of the LiMn_1.5Ni_0.5O₄ spinel oxide, three series of Cr substitutions have been pursued with y ≤ 0.2: LiMn_1.5Ni_0.5−yCr_yO₄, LiMn_1.5−0.5yNi_0.5−0.5yCr_yO₄, and LiMn_1.5−0.33yLi_0.33yNi_0.5−yCr_yO₄. While the first series involves an increase in the Mn³⁺ content, the second and third series are designed to maintain charge neutrality (Mn⁴⁺, Ni²⁺, Cr³⁺, and Li⁺) without introducing Mn³⁺ ions. The LiMn_1.5Ni_0.5−yCr_yO₄ series experiences a widening of the 4 V plateau and a decrease in the 5 V capacity compared to LiMn_1.5Ni_0.5O₄ due to an increase in the Mn³⁺ content. On the other hand, the LiMn_1.5−0.5yNi_0.5−0.5yCr_yO₄ series shows a suppression of the 4 V plateau and an increase in the 5 V capacity due to the elimination of the Mn³⁺ions. The LiMn_1.5−0.33yLi_0.33yNi_0.5−yCr_yO₄ series shows a suppression of the 4 V plateau at low Cr contents, but an increase in the 4 V plateau as the Cr content increases above 0.1. Among the various compositions investigated, LiMn_1.45Ni_0.45Cr_0.1O₄ exhibits the best combination of high 5 V capacity (128 mAh/g at 5–4.2 V) and excellent capacity retention (98% in 50 cycles) compared to 118 mAh/g and 92% for LiMn_1.5Ni_0.5O₄.     

Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiN _x layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 × 10¹⁰ cm^-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH₃ annealing and GaN spacer layer growth for improving the PL intensity of the SiN _x -treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices.     

有机相微波合成AgInS2量子点及其白光发光二极管应用研究

AgInS₂量子点(AIS QDs)由于具有绿色环保、发射波长可调、荧光寿命长、斯托克斯位移大等优势,在光电和生物医药领域具有广阔的应用前景。采用微波辅助加热法在十八烯溶剂中制备了AIS QDs。通过X射线衍射、透射电子显微镜、光致发光光谱系统研究了反应时间对AIS QDs的物相、形貌及荧光性能的影响,采用傅里叶红外光谱和X射线光电子能谱表征了量子点表面结合的情况。实验结果表明：当微波功率为800 W、反应时间为5~25 min时均可以制备出AIS QDs。随着反应时间的延长,AIS QDs的粒径由3 nm增加至4 nm,发光峰位在592.0~619.6 nm范围内调谐;同时AIS QDs的荧光强度逐渐提高,并在15 min达到峰值,量子产率(PLQY)达到16.16%。进一步采用ZnS作为包覆壳层有效钝化量子点表面缺陷、提高荧光性能,制备出的AIS@ZnS QDs的PLQY增加至31.21%。将AIS@ZnS QDs和商用荧光粉共同作为发光层制备成白光发光二极管(WLED)器件,在20 mA电流驱动下发光效率(LE)为74.90 lm/W,显色指数(CRI)和色温(CCT)分别为83.31和3823 K,表明制备的量子点在固态照明领域具有潜在的应用前景。     

Hybrid light-emitting diodes from anthracene-contained polymer and CdSe/ZnS core/shell quantum dots

In this paper, we added CdSe/ZnS core/shell quantum dots (QDs) into anthracene-contained polymer. The photoluminescent (PL) characteristic of polymer/QD composite film could identify the energy transitions of anthracene-contained polymer and QDs. Furthermore, the electroluminescent (EL) characteristic of hybrid LED also identifies emission peaks of blue polymer and QDs. The maximum luminescence of the device is 970 cd/m² with 9.1 wt.% QD hybrid emitter. The maximum luminous efficiency is 2.08 cd/A for the same device.     

Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control

ABSTRACT: The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an AlN spacer layer is inserted before the growth of GaN QDs. GaN/AlN QD samples with the proposed structure are grown by molecular beam epitaxy. The results show that by choosing a proper AlN spacer thickness to control the strain in GaN QDs, the internal quantum efficiencies have been improved from 30.7% to 66.5% and from 5.8% to 13.5% for QDs emitting violet and green lights, respectively.     

Superiority of nitrate decomposition method for synthesis of K2NiF4-type LaxSr2−xMnO4 catalysts

K₂NiF₄-type La_0.2Sr_1.8MnO₄ was synthesized by nitrate (ND) and nitrate/acetate (NAD) decomposition methods as well as solid-state reaction. Single-phase oxide was obtained at 550 °C by the ND method just after the decomposition of Sr(NO₃)₂ and at 1000 °C by the NAD method after the decomposition of SrCO₃. The K₂NiF₄-type oxide was hardly formed by the solid-state reaction. In the La–Sr–Mn system, an intermediate compound of SrCO₃, if present or formed during the decomposition process, interfered with the low-temperature formation of the K₂NiF₄-type oxide because of its high decomposition temperature about 1000 °C. The ND method used only metal nitrates and no starting materials with carbon source, so that the low-temperature synthesis of the K₂NiF₄-type oxide was realized without forming obstinate intermediate compound of SrCO₃. The low-temperature synthesis was possible for La_xSr_2−xMnO₄ with the substitution of La (0 < x < 0.5) and not for La_0.2A_1.8MnO₄ (A = Ca and Ba). The effect of A-site cations on the K₂NiF₄-phase formation was discussed from the geometric aspect.     

Effect of topological structure on photoluminescence of PbSe quantum dot‐doped borosilicate glasses

Borosilicate glasses doped with PbSe quantum dots (QDs) were prepared by a conventional melt‐quenching process followed by heat treatment, which exhibit good thermal, chemical, and mechanical stabilities, and are amenable to fiber‐drawing. A broad near infrared (NIR) photoluminescence (PL) emission (1070‐1330 nm) band with large full‐width at half‐maximum (FWHM) values (189‐266 nm) and notable Stokes shift (100‐210 nm) was observed, which depended on the B₂O₃ concentration. The PL lifetime was about 1.42‐2.44 μs, and it showed a clear decrease with increasing the QDs size. The planar [BO₃] triangle units forming the two‐dimensional (2D) glass network structure clearly increased with increasing B₂O₃ concentration, which could accelerate the movement of Pb²⁺ and Se^2? ions and facilitate the growth of PbSe QDs. The tunable broadband NIR PL emission of the PbSe QD‐doped borosilicate glass may find potential application in ultra‐wideband fiber amplifiers.     

Crystalline structure and electrical properties of YCuxMn1–xO3 solid solutions

Solid solutions belonging to the Mn-rich region of the YCu_xMn_1–xO₃ system have been studied. The powders were prepared by solid-state reaction between the corresponding oxides. Sintered ceramics were obtained by firing at 1100–1325 °C. The incorporation of 30 at.% Cu to the yttrium manganite induces the formation of a perovskite-type phase, with orthorhombic symmetry. Increase of the Cu amount do not appreciably affects the orthorhombicity factor b/a, up to an amount of 50 at.% Cu. Above this Cu amount, a multiphase system has been observed, with the presence of unreacted-Y₂O₃, YMnO₃ and Y₂Cu₂O₅, along with a perovskite phase. DC electrical conductivity measurements have shown a semiconducting behaviour for all the solid solutions with perovskite-type structure. The room temperature conductivity increases with Cu until 33 at.% Cu, and then decreases. Thermally activated small polaron hopping mechanism, between Mn³⁺ and Mn⁴⁺ cations, controls the conductivity in these ceramics. Results are discussed as a function of the Mn³⁺/Mn⁴⁺ ratio for each composition.     

Nanosized perovskite-type oxides La1−xSrxMO3−δ (M = Co, Mn; x = 0, 0.4) for the catalytic removal of ethylacetate

Nanometer perovskite-type oxides La_1−xSr_xMO_3−δ (M = Co, Mn; x = 0, 0.4) have been prepared using the citric acid complexing-hydrothermal-coupled method and characterized by means of techniques, such as X-ray diffraction (XRD), BET, high-resolution scanning electron microscopy (HRSEM), X-ray photoelectron spectroscopy (XPS), temperature-programmed desorption (TPD), and temperature-programmed reduction (TPR). The catalytic performance of these nanoperovskites in the combustion of ethylacetate (EA) has also been evaluated. The XRD results indicate that all the samples possessed single-phase rhombohedral crystal structures. The surface areas of these nanomaterials ranged from 20 to 33 m² g⁻¹, the achievement of such high surface areas are due to the uniform morphology with the typical particle size of 40–80 nm (as can be clearly seen in their HRSEM images) that were derived with the citric acid complexing-hydrothermally coupled strategy. The XPS results demonstrate the presence of Mn⁴⁺ and Mn³⁺ in La_1−xSr_xMnO_3−δ and Co³⁺ and Co²⁺ in La_1−xSr_xCoO_3−δ, Sr substitution induced the rises in Mn⁴⁺ and Co³⁺ concentrations; adsorbed oxygen species (O⁻, O₂⁻, or O₂²⁻) were detected on the catalyst surfaces. The O₂-TPD profiles indicate that Sr doping increased desorption of the adsorbed oxygen and lattice oxygen species at low temperatures. The H₂-TPR results reveal that the nanoperovskite catalysts could be reduced at much lower temperatures (<240 °C) after Sr doping. It is observed that under the conditions of EA concentration = 1000 ppm, EA/oxygen molar ratio = 1/400, and space velocity = 20,000 h⁻¹, the catalytic activity (as reflected by the temperature (T_100%) for EA complete conversion) increased in the order of LaCoO_2.91 (T_100% = 230 °C) ≈ LaMnO_3.12 (T_100% = 235 °C) < La_0.6Sr_0.4MnO_3.02 (T_100% = 190 °C) < La_0.6Sr_0.4CoO_2.78 (T_100% = 175 °C); furthermore, there were no formation of partially oxidized by-products over these catalysts. Based on the above results, we conclude that the excellent catalytic performance is associated with the high surface areas, good redox properties (derived from higher Mn⁴⁺/Mn³⁺ and Co³⁺/Co²⁺ ratios), and rich lattice defects of the nanostructured La_1−xSr_xMO_3−δ materials.     

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.     

铜离子掺杂CsPbCl3量子点光学性能及稳定性探究

近年来,钙钛矿因其特殊的结构受到广泛的关注。其中,全无机钙钛矿量子点作为下一代发光材料更因其优异的发光性能得到了广泛的研究和关注。但是因为其本身的铅（Pb）元素带来的毒性和较差的稳定性,钙钛矿量子点在生产和应用方面依然面临着诸多阻碍。为了解决这些难题,介绍了一种铜离子（Cu²⁺）B位掺杂CsPbCl₃钙钛矿量子点。采用了热注射的方法成功地将Cu²⁺引入CsPbCl₃钙钛矿量子点中。研究发现,Cu²⁺掺杂CsPbCl₃量子点能够保持初始四方晶体结构。由于Cu²⁺的掺杂,有效地消除了CsPbCl₃量子点的表面缺陷,从而通过辐射途径促进了激子复合,提高了CsPbCl₃量子点的发光性质。通过稳定性对比测试发现,一段时间内,Cu²⁺掺杂CsPbCl₃量子点在水中的发光强度明显高于CsPbCl₃量子点。     

Improving Si solar cell performance using Mn:ZnSe quantum dot-doped PLMA thin film

Poly(lauryl methacrylate) (PLMA) thin film doped with Mn:ZnSe quantum dots (QDs) was spin-deposited on the front surface of Si solar cell for enhancing the solar cell efficiency via photoluminescence (PL) conversion. Significant solar cell efficiency enhancements (approximately 5% to 10%) under all-solar-spectrum (AM0) condition were observed after QD-doped PLMA coatings. Furthermore, the real contribution of the PL conversion was precisely assessed by investigating the photovoltaic responses of the QD-doped PLMA to monochromatic and AM0 light sources as functions of QD concentration, combined with reflectance and external quantum efficiency measurements. At a QD concentration of 1.6 mg/ml for example, among the efficiency enhancement of 5.96%, about 1.04% was due to the PL conversion, and the rest came from antireflection. Our work indicates that for the practical use of PL conversion in solar cell performance improvement, cautions are to be taken, as the achieved efficiency enhancement might not be wholly due to the PL conversion.     

水性CdTe量子点在肝癌细胞标记中的应用

采用一种简单的合成方法,用空气中稳定性良好的亚碲酸钠为前体,合成了高质量的CdTe量子点,发射范围从520～620 nm可调,最佳实验条件下发光效率达40%以上。用叶酸修饰的CdTe量子点作为荧光探针,成功标记肝癌细胞,实验结果表明,通过叶酸偶联的CdTe量子点,能有效进入肿瘤细胞内部。     

Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure

Time-dependent pH sensing phenomena of the core-shell CdSe/ZnS quantum dot (QD) sensors in EIS (electrolyte insulator semiconductor) structure have been investigated for the first time. The quantum dots are immobilized by chaperonin GroEL protein, which are observed by both atomic force microscope and scanning electron microscope. The diameter of one QD is approximately 6.5 nm. The QDs are not oxidized over a long time and core-shell CdSe/ZnS are confirmed by X-ray photon spectroscopy. The sensors are studied for sensing of hydrogen ions concentration in different buffer solutions at broad pH range of 2 to 12. The QD sensors show improved sensitivity (38 to 55 mV/pH) as compared to bare SiO₂ sensor (36 to 23 mV/pH) with time period of 0 to 24 months, owing to the reduction of defects in the QDs. Therefore, the differential sensitivity of the QD sensors with respect to the bare SiO₂ sensors is improved from 2 to 32 mV/pH for the time period of 0 to 24 months. After 24 months, the sensitivity of the QD sensors is close to ideal Nernstian response with good linearity of 99.96%. Stability and repeatability of the QD sensors show low drift (10 mV for 10 cycles) as well as small hysteresis characteristics (<10 mV). This QD sensor is very useful for future human disease diagnostics.