CBD方法制备的Zn(O,S)薄膜的微结构表征及性能

对低温化学浴沉积方法制备的Zn(O,S)薄膜进行了研究,通过XPS、SEM、XRD、拉曼光谱、PL谱、紫外-可见吸收光谱等手段对薄膜的形貌、结构及组成进行系统表征,探究了其作为钙钛矿电池电子传输层的可能性。研究表明:化学浴沉积(CBD)方法制备的Zn(O,S)薄膜为ZnO、Zn S和ZnOS合金的复合膜;该薄膜对CH_3NH_3Pb I3光吸收层具有与TiO_2相当的电子抽提能力,是一种可供选择的高效柔性钙钛矿电池电子传输层材料。     

制备方法对钙钛矿薄膜结构及形貌的影响

采用液相连续沉积法制备了有机/无机杂化钙钛矿（CH₃NH₃PbI₃,MAPbI₃）光吸收层,并研究了不同薄膜形貌、晶体结构和光吸收能力对钙钛矿太阳能电池性能的影响。结果表明：制备工艺对吸光层形貌和器件光电性能产生很大的影响。相对于分步浸渍法,分步旋涂法（分步旋涂无机相碘化铅PbI₂和有机相甲胺碘CH₃NH₃I前驱液）和气体辅助修复法（新制初始MAPbI₃薄膜在室温下置于甲胺气氛中）能有效改善薄膜形貌和平整度,获得覆盖完全的均匀钙钛矿吸光层。同时,进一步分析了初始MAPbI₃膜的形貌对气体修复法制备全覆盖平整钙钛矿薄膜的影响,发现初始钙钛矿膜的形貌对最终修复后的膜层形貌没有影响,这可能是因为不同初始MAPbI₃膜经甲胺气体处理后均形成一种"甲胺铅化碘-甲胺"（MAPbI₃·MA）的液态中间相,再经退火处理后均获得平整、致密的钙钛矿膜层,极大地提高了MAPbI₃的结晶度和薄膜均匀性,从而提高活性层的吸光率、光电流和电池效率。     

陈化过程对溴铅甲胺钙钛矿太阳能电池性能影响的研究

氧气氛下的器件陈化对钙钛矿光伏电池的性能有显著影响。本文研究了通过溶液法组装的溴铅甲胺(MAPbBr₃)电池的性能,其中致密的和介孔的Ti O₂作为电子传输层,Spiro-OMeTAD作为空穴传输层。将MAPbBr₃钙钛矿太阳能电池置于湿度<10%的氧气氛暗箱中不同时间,探究O₂对钙钛矿薄膜缺陷的钝化影响,并且采用瞬态光电压(TPV)技术分析陈化前后器件在不同光照时间下的离子迁移。结果表明,陈化处理后,基于MAPbBr₃的器件性能得到明显改善,光电转换效率从4.18%提高到6.73%。这种原因可能归结于钙钛矿材料的缺陷态密度降低,因为在黑暗条件下,O₂在MAPbBr₃钙钛矿太阳能电池中进行扩散,从而起到钝化缺陷的作用。     

ZnO基柔性染料敏化太阳能电池的研究

采用化学浴沉积法制备Zn O光阳极薄膜,并将所制备光阳极膜组装成柔性染料敏化太阳能电池。主要研究了沉淀剂的种类和沉淀剂的浓度对所形成的薄膜和电池性能的影响。采用XRD和SEM分别对薄膜的物相组成和显微形貌进行了表征。采用I-V测试系统对电池的光电性能进行测试。研究结果表明:沉积温度为80℃,六次甲基四胺(HMT)的浓度为0.30 M,硝酸锌(Zn(NO3)2·6H2O)浓度为0.1 M时,制备Zn O薄膜光电性能较好,所组装的柔性染料敏化太阳能电池的开路电压为0.60V,短路电流为2.57 m A·cm-2,填充因子为0.72,效率为1.13%。     

改性SnO2碳基钙钛矿太阳能电池的性能研究

氧化锡(SnO₂)电子传输层因优异的性能而广泛使用于钙钛矿太阳能电池，但SnO₂极易在表面形成氧空位以及氧化锡和钙钛矿之间界面缺陷问题会导致电荷传输受阻。本文通过在氧化锡电子传输层中掺入含有有机双官能团的脯氨酸来减少氧空位并调节电子传输层和钙钛矿之间的电子传输能力。SEM、XRD、J-V等测试证明脯氨酸的掺入改善了钙钛矿薄膜的形貌并增强了电子传输层的电荷传输性能，器件的光电转换效率(PCE)从11.15%提升到至14.49%。     

Sb2S3太阳能电池的研究进展

Sb₂S₃太阳能电池相比于其他太阳能电池如铜铟镓硒、碲化镉和有机-无机钙钛矿等,具有成本低、无毒性、稳定性高的优点,并且Sb₂S₃材料本身拥有优良的光学性能,如带隙宽度为1.5～2.2eV、光吸收系数高达105cm–1,因此在太阳能转化方面具有良好的应用前景。但目前Sb₂S₃太阳能电池的光电转化效率仍然不高,其最高光电转化效率仅有7.5%,远低于发展成熟的单晶硅太阳能电池、铜铟镓硒、碲化镉太阳能电池。本文简要介绍了Sb₂S₃太阳能电池的工作原理,从光阳极、吸光层Sb₂S₃、空穴传输层3个方面阐述了其发展现状及存在的问题。随后针对限制光电转化效率的因素,阐述了现有的优化电池性能的方法及其研究进展。最后对Sb₂S₃太阳能电池的未来发展方向进行了展望,基于对现有研究分析认为,在未来的研究中需要进一步探索新型的光阳极半导体的种类和结构,研究简单低耗、结晶性良好的Sb₂S₃薄膜的制备方法,研究具有高电子传导率、与Sb₂S₃和对电极接触良好的空穴传输层以及发展高效界面修饰以及金属离子掺杂的方法,以提高Sb₂S₃太阳能电池的性能。     

溶液法制备铜锌锡硫硒薄膜太阳能电池的研究进展

溶液法因其具有操作流程简单、材料利用率高以及成本低廉等潜在优势,被认为是一种很有发展前景和应用潜力的铜锌锡硫硒(Cu₂ZnSn(S,Se)₄,CZTSSe)薄膜太阳能电池制备方法。本工作将溶液法的研究现状按喷雾热解法、基于浴的水溶液法、纳米粒子溶液法和直接溶液涂膜法进行分类介绍。通过分析和比较各种方法报道过的优化途径(如优化阳离子比例、烧结条件和硒化条件,以及掺入Na、Ge等金属元素),对溶液法制备的高性能Cu₂ZnSn(S,Se)₄薄膜太阳能电池的当前研究成果进行综述,并总结了各种溶液法制备铜锌锡硫硒薄膜电池的优势和所存在的问题。展望其未来的发展,认为今后的研究重点应侧重于薄膜组成和反应途径,以寻求降低Cu₂ZnSn(S,Se)₄吸收层的本征缺陷的方法。     

电化学沉积制备V2O5薄膜电极的表面结构及储钠性能

以含有CTAB的V₂O₅溶胶为电解液,采用电沉积法在不锈钢基体上沉积V₂O₅薄膜前体,经300℃烧结处理后制备了无黏结剂和导电剂的V₂O₅纳米薄膜电极。XRD测试表明该方法制备的V₂O₅薄膜是含水相的V₂O₅·nH₂O,与未添加CTAB制备的薄膜相比,其层间距明显变大。FESEM和AFM测试发现CTAB辅助电沉积制备的V₂O₅薄膜具有粗糙多孔的表面形貌;XPS测试表明CTAB辅助电沉积制备的V₂O₅薄膜中含有更多的低价钒离子（V⁴⁺）。电化学测试发现该方法制备的V₂O₅薄膜具有优异的嵌/脱Na⁺循环稳定性;与未添加CTAB制备的薄膜相比,CTAB辅助电沉积制备的V₂O₅薄膜具有更好的电化学反应可逆性、更强Na⁺扩散性能和更高的储钠比容量,是一种非常有应用前景的钠离子电池正极材料。     

丙基碘化铵掺杂制备稳定高效的FAPbI3钙钛矿太阳能电池

黑色的α相甲脒铅碘(α-FAPbI₃)由于其出色的光电性质在光伏领域受到广泛关注。然而,α-FAPbI₃在室温下容易转变为没有光学活性的黄色相(δ-FAPbI₃),降低器件的光伏性能和稳定性。通过在FAPbI₃前驱液中掺杂丙基碘化铵(PAI),在空气气氛下制备纯α-FAPbI₃薄膜。研究发现,PAI掺杂可以抑制α-FAPbI₃的相转变而不改变其光学带隙。同时,PAI掺杂后的FAPbI₃薄膜的晶体质量、器件光伏性能和稳定性均得到显著提升。掺杂1.0%(摩尔分数)PAI的FAPbI₃钙钛矿电池,其光电转换效率达到22.6%。结果表明PAI掺杂是提高α-FAPbI₃钙钛矿电池光伏性能和稳定性的一种有效策略。     

F3EACl修饰层对钙钛矿太阳能电池性能提升的研究

一般来说,钙钛矿表面的陷阱和晶界(GBs)对钙钛矿太阳能电池(PSCs)的性能和长期稳定性非常不利。本研究用一种含有F原子的三氟乙胺盐酸盐(F₃EACl)作为改性层,沉积在钙钛矿(PVSK)层和空穴传输层(HTL)之间,以钝化钙钛矿表面上的陷阱和GBs。通过对F₃EACl修饰后钙钛矿薄膜结晶性、钙钛矿薄膜形貌、钙钛矿薄膜光物理性质以及电池光伏性能的研究发现,F₃EACl与钙钛矿形成的N—H···F氢键作用以及F₃EA⁺和钙钛矿中的I-之间的相互作用能够钝化钙钛矿表面的缺陷,从而提高器件的性能和稳定性。此外,F₃EACl改性层还可以调节钙钛矿层与HTL之间的能级分布,进而提高空穴的提取效率。结果显示,F₃EACl修饰后的PSCs的能量转换效率(PCE)从19.15%提高到22.45%。这表明F₃EACl是一种用来钝化钙钛矿陷阱比较好的材料,可提升PSCs的性能和稳定性。     

不同旋涂方式对铜锌锡硫硒薄膜及相应器件性能的影响

晶体质量是决定铜锌锡硫硒(Cu₂ZnSn(S,Se)₄, CZTSSe)吸收层薄膜吸收效率的关键,旋涂是溶液法制备CZTSSe吸收层的第一步,因此旋涂方式的选择至关重要。为了探究不同旋涂方式对CZTSSe吸收层薄膜质量和相应器件性能的影响,分别采用三组不同的旋涂方式制备铜锌锡硫(Cu₂ZnSnS₄, CZTS)前驱体薄膜及CZTSSe吸收层薄膜,并利用X射线衍射仪(XRD)、能谱仪(EDS)、显微拉曼光谱仪(Raman)、场发射扫描电子显微镜(FE-SEM)分析了不同旋涂方式对所制备的CZTSSe吸收层薄膜晶体结构、元素成分、相纯度、表面形貌的影响。同时,采用电流密度-电压(J-V)测试和外量子效率(EQE)测试对CZTSSe吸收层薄膜太阳电池的光电特性进行了表征。结果表明:旋涂7周期,且第一周期烘烤之前旋涂2次的效果最好,所制备的CZTS前驱体薄膜均匀,无裂纹,CZTSSe吸收层薄膜结晶度更高,薄膜表面更平整致密,晶粒大小更均匀,实现了9.63%的光电转换效率。通过对采用不同旋涂方式制备的器件的性能参数进行统计分析,得出新的旋涂方式可以提高CZTSSe薄膜太阳电池的可重复性,为将来可能的大规模商业化应用做铺垫。     

Spray-coated SnO2 electron transport layer with high uniformity for planar perovskite solar cells

SnO₂ has been proven to be an effective electron transport layer(ETL)material for perovskite solar cells(PSCs)owing to its excellent electrical and optical properties.Here,we introduce a viable spray coating method for the preparation of SnO2 films.Then,we employ a SnO₂ film prepared using the spray coating method as an ETL for PSCs.The PSC based on the spray-coated SnO₂ ETL achieves a power conversion efficiency of 17.78%,which is comparable to that of PSCs based on conventional spin-coated SnO₂ films.The large-area SnO₂ films prepared by spray coating exhibit good repeatability for device performance.This study shows that SnO₂ films prepared by spray coating can be applied as ETLs for stable and high-efficiency PSCs.Because the proposed method involves low material consumption,it enables the low-cost and large-scale production of PSCs.     

Study of Pb-based and Pb-free perovskite solar cells using Cu-doped Ni1-xO thin films as hole transport material

SCAPS solar cell simulation program was applied to model an inverted structure of perovskite solar cells using Cu-doped Ni_1-xO thin films as hole transport layer. The Cu-doped Ni_1-xO film were made by co-sputtering deposition under different deposition conditions. By increasing the amount of the Cu-dopant, the film crystallinity enhanced whereas the bandgap energy decreased. The transmittance of the thin films decreased significantly by increasing the sputtering power of copper. High quality, uniform, compact, and pin-hole free films with low surface roughness were achieved. The structural, chemical, surface morphology, optical, electrical, and electronic properties of the Cu doped Ni_1-xO films were used as input parameters in the simulation of Pb-based (MAPbI_3-xCl_x) and Pb-free (MAGeI₃) perovskite solar cells. Simulation results showed that the performance of both Pb-based and Pb-free perovskite solar cell devices significantly enhanced with Cu-doped Ni_1-xO film. The highest power conversion efficiency (PCE) for the Pb-free perovskite solar cell is 8.9% which is lower than the highest PCE of 17.5% for the Pb-based perovskite solar cell.     

Control of Microstructure and Orientation in Solution-Deposited BaTiO3 and SrTiO3 Thin Films

Columnar and highly oriented (100) BaTiO₃ and SrTiO₃ thin films were prepared by a chelate-type chemical solution deposition (CSD) process by manipulation of film deposition conditions and seeded growth techniques. Randomly oriented columnar films were prepared on platinum-coated Si substrates by a multilayering process in which nucleation of the perovskite phase was restricted to the substrate or underlying layers by control of layer thickness. The columnar films displayed improvements in dielectric constant and dielectric loss compared to the fine-grain equiaxed films that typically result from CSD methods. Highly oriented BaTiO₃ and SrTiO₃ thin films were fabricated on LaAlO₃ by a seeded growth process that appeared to follow a standard "two-step" growth mechanism that has been previously reported. The film transformation process involved the bulk nucleation of BaTiO₃ throughout the film, followed by the consumption of this matrix by an epitaxial overgrowth process originating at the seed layer. Both BaTiO₃ and PbTiO₃ seed layers were effective in promoting the growth of highly oriented (100) BaTiO₃ films. Based on the various processing factors that can influence thin film microstructure, the decomposition pathway involving the formation of BaCO₃ and TiO₂ appeared to dictate thin film microstructural evolution.     

Thin-Film Proton BaZr0.85Y0.15O3 Conducting Electrolytes: Toward an Intermediate-Temperature Solid Oxide Fuel Cell Alternative

A novel method for the preparation of a thin oxidic proton-conducting electrolyte is presented. This kind of supported film was studied in detail as it is applicable for IT–SOFC, H₂ membranes, and advanced catalytic converters. Thin-film (∼5 μm) proton-conducting membranes with the nominal composition BaZr_0.85Y_0.15O_3−δ (BZY) were prepared over porous Ni–8YSZ/Ni–BZY substrates by the solid-state reaction of a gastight 8YSZ layer and a coated BaCO₃ layer. The resulting asymmetric membranes are of a homogeneous composition and are gastight. Indeed, XRD analysis showed a highly crystalline cubic perovskite. The solid-state reaction promoted the formation of (i) an electrolyte with very fine (∼100 nm) grains and high packing density and (ii) an unexpected porous needle-like top layer with a nominal composition similar to that of the protonic electrolyte, to which it is intimately attached. The layer morphology, phase distribution, and lattice composition were investigated by EDS–SEM, EDX as well as SIMS. Conduction properties of the protonic material were investigated by DC conductivity of pressed bars under different gas compositions and also by impedance spectroscopy of a supported thin film.     

Tetramethylammonium based lead free perovskite active layer for solar cell application

Here we report the synthesis of a novel lead free organic-inorganic halide perovskite layer, tetramethylammonium tin tri-iodide (TMASnI₃), by simple and cost-effective chemical synthesis technique. The microstructural and optical studies confirm the formation of hexagonal perovskite structure with optical band gap ∼2.44 eV. A solar cell structure is fabricated by depositing the perovskite layer on zinc oxide thin film to demonstrate stable photovoltaic response under solar spectrum, where a thin layer of graphene oxide flakes on top of the perovskite layer acts as the charge transport layer. The open-circuit voltage (V_oc) and short circuit current density (J_sc) for this cell as extracted from the current-voltage measurement under one sun illumination of AM1.5 solar radiation are 0.60 V and 8.65 mA/cm², respectively. Without using any conventional hole transport layer, the power conversion efficiency (η) has been obtained as 1.92% which indicates the suitability of this perovskite material as an active layer for perovskite solar cell.     

Texture Control of Sol-Gel Derived Pb(Mg1/3Nb2/3)O3–PbTiO3 Thin Films Using Seeding Layer

Lead magnesium niobium titanate (PMNT) thin films with a composition near the morphotropic phase boundary were prepared on conventional Pt(111)/Ti/SiO₂/Si substrates using a modified sol-gel process. A PbO seeding layer was introduced to the interface between the PMNT layer and the substrate to enhance the [001]-preferential orientation of the PMNT film. Single-phase perovskite PMNT films with highly [001]-preferential orientation were obtained at reduced annealing temperatures compared with the PMNT films directly deposited on the same substrates. The dielectric and ferroelectric properties of the prepared PMNT films were evaluated as a function of annealing temperature.     

Effects of Heating Profiles on the Orientation and Dielectric Properties of 0.5Pb(Mg1/3Nb2/3)O3-0.5PbTiO3 Thin Films by Chemical Solution Deposition

0.5Pb(Mg_1/3Nb_2/3)O₃-0.5PbTiO₃ thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by varying the film formation procedures and heating processes. Depending on the multilayer film formation and appropriate heating process, the films were grown with a preferential orientation. The films showed a (100)-preferred orientation and large grain-size distribution when they were directly heat-treated after deposition of amorphous layers. The films showed a (111)-preferred orientation and small grain-size distribution when formed layer-by-layer or directly heating amorphous thin films with a perovskite seed layer. These results were explained by the effect of a seed layer. Saturation polarization of the (111)-preferred films was ∼35 µC/cm², which was somewhat higher than that of the (100)-preferred film. In contrast, the dielectric constant of the (100)-preferred film was ∼1600, which was larger than that of the (111)-preferred film.