Thermal conductivity and mechanical properties of Si3N4 ceramics with binary fluoride sintering additives

Silicon nitride (Si₃N₄) ceramics were fabricated by gas pressure sintering (GPS) using four sintering additives: Y₂O₃–MgO, Y₂O₃–MgF₂, YF₃–MgO, and YF₃–MgF₂. The phase composition, grain growth kinetics, mechanical properties, and thermal conductivities of the Si₃N₄ ceramics were compared. The results indicated that the reduction of YF₃ on SiO₂, induced a high Y₂O₃/SiO₂ secondary phase ratio, which improved the thermal conductivity of the Si₃N₄ ceramics. The depolymerization of F atom reduces the diffusion energy barrier of solute atom and weakens the viscous resistance of anion group, which was beneficial to grain boundary migration. Besides exhibiting a lower grain growth exponent(n = 2.5)and growth activation energy (Q = 587.94 ± 15.35 kJ/mol), samples doped with binary fluorides showed excellent properties, including appreciable thermal conductivity (69 W m⁻¹ K⁻¹), hardness (14.63 ± 0.12 GPa), and fracture toughness (8.75 ± 0.18 MPa m^1/2), as well as desirable bending strength (751 ± 14 MPa).     

Effect of a new nonoxide additive,Y3Si2C2, on the thermal conductivity and mechanical properties of Si3N4 ceramics

Enhancement of the thermal conductivity of silicon nitride is usually achieved by sacrificing its mechanical properties (bending strength). In this study, β-Si₃N₄ ceramics were prepared using self-synthesized Y₃Si₂C₂ and MgO as sintering additives. It was found that the thermal conductivity of the Si₃N₄ ceramics was remarkably improved without sacrificing their mechanical properties. The microstructure and properties of the Si₃N₄ ceramics were analyzed and compared with those of the Y₂O₃-MgO additives. The addition of Y₃Si₂C₂ eliminated the inherent SiO₂ and introduced nitrogen to increase the N/O ratio of the grain-boundary phase, inducing Si₃N₄ grain growth, increasing Si₃N₄ grain contiguity, and reducing lattice oxygen content in Si₃N₄. Therefore, by replacing Y₂O₃ with Y₃Si₂C₂, the thermal conductivity of the Si₃N₄ ceramics was significantly increased by 31.5% from 85 to 111.8Wm⁻¹K⁻¹, but the bending strength only slightly decreased from 704 ± 63MPa to 669 ± 33MPa.     

Effects of Y2O3/MgO ratio on mechanical properties and thermal conductivity of silicon nitride ceramics

In this work, the effects of Y₂O₃/MgO ratio on the densification behavior, phase transformation, microstructure evolution, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were investigated. Densified samples with bimodal microstructure could be obtained by adjusting the ratio of Y₂O₃/MgO. It was found that a low Y₂O₃/MgO ratio facilitated the densification of Si₃N₄ ceramics while a high Y₂O₃/MgO ratio benefited the phase transformation of Si₃N₄ ceramics. Best mechanical properties (flexural strength of 875 MPa, and fracture toughness of 8.25 MPa·m^1/2, respectively) and optimal thermal conductivity of 98.04W/(m·K) were achieved in the sample fabricated with Y₂O₃/MgO ratio of 3:4 by sintering at 1900°C for 4 h.     

Microstructure and thermal conductivity of gas-pressure-sintered Si3N4 ceramic: the effects of Y2O3 additive content

Si₃N₄ ceramics were sintered at 1900 °C under a nitrogen pressure of 1 MPa using Y₂O₃-MgO additives. The effects of Y₂O₃ content (0.5-4 mol%) on microstructure and thermal conductivity were systematically investigated. The increasing Y₂O₃ content led to increases in amount and viscosity of liquid phase during sintering, which induced a “bimodal to normal” transition in distribution of grain size, decreased Si₃N₄/Si₃N₄ contiguity and enhanced devitrification degree of intergranular phase in sintered bulks. Moreover, the decreasing Y₂O₃ content was found to improve the elimination efficiency of SiO₂ impurity during sintering, resulting in lower lattice oxygen content in densified specimens. The microstructure had a strong effect on thermal conductivity. The samples sintered for 3 h gained an increase of thermal conductivity from 65 to 73 W·m^-1 K^-1 with increasing Y₂O₃ content, while the samples sintered for 12 h obtained a substantial increase of thermal conductivity from 87 to 132 W·m^-1 K^-1 with decreasing Y₂O₃ content.     

Effects of Gd2O3 and MgSiN2 sintering additives on the thermal conductivity and mechanical properties of Si3N4 ceramics

Si₃N₄ ceramics were prepared by gas pressure sintering at 1900°C for 12 h under a nitrogen pressure of 1 MPa using Gd₂O₃ and MgSiN₂ as sintering additives. The effects of the Gd₂O₃/MgSiN₂ ratio on the densification, microstructure, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were systematically investigated. It was found that a low Gd₂O₃/MgSiN₂ ratio facilitated the thermal diffusivity of Si₃N₄ ceramics while a high Gd₂O₃/MgSiN₂ ratio benefited the densification and mechanical properties. When the Gd₂O₃/MgSiN₂ ratio was 1:1, Si₃N₄ ceramics obtained an obvious exaggerated bimodal microstructure and the optimal properties. The thermal conductivity, flexural strength, and fracture toughness were 124 W·m⁻¹·k⁻¹, 648 MPa, and 9.12 MPa·m^1/2, respectively. Comparing with the results in the literature, it was shown that Gd₂O₃-MgSiN₂ was an effective additives system for obtaining Si₃N₄ ceramics with high thermal conductivity and superior mechanical properties.     

Improved thermal conductivity of β-Si3N4 ceramics by lowering SiO2/Y2O3 ratio using YH2 as sintering additive

A two-step sintering process was conducted to produce β-Si₃N₄ ceramics with high thermal conductivity. During the first step, native SiO₂ was eliminated, and Y₂O₃ was in situ generated by a metal hydride reduction process, resulting in a high Y₂O₃/SiO₂ ratio. The substitution YH₂ for Y₂O₃ endow Si₃N₄ ceramics with an increase of 29% in thermal conductivity from 95.3 to 123 W m⁻¹ K⁻¹ after sintered at 1900°C for 12 hours despite an inferior sinterability. This was primarily attributed to the purified enlarged grains, devitrified grain boundary phase, and reduced lattice oxygen content in the YH₂-MgO-doped material.     

Effect of post-sintering heat-treatment on thermal and mechanical properties of Si3N4 ceramics sintered with different additives

To improve the thermal conductivity of Si₃N₄ ceramics, elimination of grain-boundary glassy phase by post-sintering heat-treatment was examined. Si₃N₄ ceramics containing SiO₂–MgO–Y₂O₃-additives were sintered at 2123 K for 2 h under a nitrogen gas pressure of 1.0 MPa. After sintering, the SiO₂ and MgO could be eliminated from the ceramics by vaporization during post-sintering heat-treatment at 2223 K for 8 h under a nitrogen gas pressure of 1.0 MPa. Thermal conductivity of 3 mass% SiO₂, 3 mass% MgO and 1 mass% Y₂O₃-added Si₃N₄ ceramics increases from 44 to 89 Wm⁻¹ K⁻¹ by the decrease in glassy phase and lattice oxygen after the heat-treatment. Relatively higher fracture toughness (3.8 MPa m^1/2) and bending strength (675 MPa) with high hardness (19.2 GPa) after the heat-treatment were achieved in this specimen. Effects of heat-treatment on microstructure and chemical composition were also observed, and compared with those of Y₂O₃–SiO₂-added and Y₂O₃–Al₂O₃-added Si₃N₄ ceramics.     

Thermal and mechanical properties of Si3N4 ceramics obtained via two-step sintering

Si₃N₄ ceramics were prepared using novel two-step sintering method by mixing α-Si₃N₄ as raw material with nanoscale Y₂O₃–MgO via Y(NO₃)₃ and Mg(NO₃)₂ solutions. Si₃N₄ composite powders with in situ uniformly distributed Y₂O₃–MgO were obtained through solid–liquid (SL) mixing route. Two-step sintering method consisted of pre-deoxidization at low temperature via volatilization of in situ-formed MgSiO₃ and densification at high temperature. Variations in O, Y, and Mg contents in Si₃N₄–Y₂O₃–MgO during first sintering step are discussed. O and Mg contents decreased with increasing temperature because SiO₂ on Si₃N₄ surface reacted with MgO to form low-melting-point MgSiO₃ compound, which is prone to volatilize at high temperature. By contrast, Y content hardly changed due to high-temperature stability of Y–Si–O–N quaternary compound. In the second sintering step, skeleton body was densified, and the formation of Y₂Si₃O₃N₄ secondary phase occurred simultaneously. Two-step sintered Si₃N₄ ceramics had lower total oxygen content (1.85 wt%) than one-step sintered Si₃N₄ ceramics (2.51 wt%). Therefore, flexural strength (812 MPa), thermal conductivity (92.1 W/m·K), and fracture toughness (7.6 MPa?m^1/2) of Si₃N₄ ceramics prepared via two-step sintering increased by 28.7%, 16.9%, and 31.6%, respectively, compared with those of one-step sintered Si₃N₄ ceramics.     

Direct bonding of silicon carbide ceramics sintered with yttria

SiC ceramics sintered with yttria were successfully joined without an interlayer by conventional hot pressing at lower temperatures (2000–2050 °C) compared to those of the sintering temperatures (2050–2200 °C). The joined SiC ceramics sintered with 2000 ppm Y₂O₃ showed almost the same thermal conductivity (˜198 Wm⁻¹ K⁻¹), fracture toughness (3.7 ± 0.2 MPa m^1/2), and hardness (23.4 ± 0.8 GPa) as those of the base material, as well as excellent flexural strength (449 MPa). In contrast, the joined SiC ceramics sintered with 4 wt% Y₂O₃ showed very high thermal conductivity (˜204 Wm⁻¹ K⁻¹) and excellent flexural strength (˜505 MPa). Approximately 16–22% decreases in strength compared to those of the base SC materials were observed in both joined ceramics, due to the segregation of liquid phase at the interface. This issue might be overcome by preparing well-polished and highly flat surfaces before joining.     

A strategy for fabricating anisotropic SI3N4 ceramics with controllable mechanical and thermal properties

Heat dissipation material with programmable anisotropic property is very challenging, yet can realize the controllable thermal diffusion for heating device. In this work, anisotropic Si₃N₄ ceramics with oriented grains are prepared to adjust and improve the mechanical and thermal properties under the applied stress field by rolling film forming technology. Through the design of the sintering aids in the process of liquid-phase sintering, the orientation degree of the Si₃N₄ grains is programmable as well as the mechanical property and the thermal property of the Si₃N₄ ceramics. As a consequence, the obtained Si₃N₄ ceramics show significant anisotropy in mechanical properties and thermal conductivity. The typical fracture toughness and thermal conductivity along the grain orientation direction are 10.6 MPa⋅m^1/2 and 45.45 W/(m⋅K) while they are 4.5 MPa⋅m^1/2 and 66.42 W/(m⋅K) in the direction perpendicular to the oriented grain, respectively. This grain orientation method paves the way for the thermal performance design and the production of programmable heat dissipation material.     

Effect of in-situ formed Y2O3 by metal hydride reduction reaction on thermal conductivity of β-Si3N4 ceramics

The effect of YH₂ on densification, microstructure, and thermal conductivity of Si₃N₄ ceramics were investigated by adjusting the amount of YH₂ in the range of 0–4 wt% using a two-step sintering method. Native SiO₂ was eliminated, and Y₂O₃ was in situ formed by a metal hydride reduction reaction, resulting in various Y₂O₃/SiO₂ ratios. Full densification of YH₂-doped samples could be achieved after sintering at 1900 °C for 4 h. The Y₂O₃/SiO₂ ratio had a significant influence on the composition of crystalline secondary phases. Besides, the increased Y₂O₃/SiO₂ ratio is conducive not only to the grain growth but also to the reduction of activity of SiO₂ in the liquid phase, resulting in enlarged purified grains, reduced volume fraction of intergranular phases and increased Si₃N₄-Si₃N₄ contiguity. Ultimately, the thermal conductivity increased by 29 % from 95.3 to 123.0 W m⁻¹ K⁻¹ after sintering at 1900 ℃ for 12 h by the substitution of Y₂O₃ with YH₂.     

Fabrication of high thermal conductivity silicon nitride ceramics by pressureless sintering with MgO and Y2O3 as sintering additives

The fabrication of silicon nitride (Si₃N₄) ceramics with a high thermal conductivity was investigated by pressureless sintering at 1800 °C for 4 h in a nitrogen atmosphere with MgO and Y₂O₃ as sintering additives. The phase compositions, relative densities, microstructures, and thermal conductivities of the obtained Si₃N₄ ceramics were investigated systemically. It was found that at the optimal MgO/Y₂O₃ ratio of 3/6, the relative density and thermal conductivity of the obtained Si₃N₄ ceramic doped with 9 wt% sintering aids reached 98.2% and 71.51 W/(m·K), respectively. EDS element mapping showed the distributions of yttrium, magnesium and oxygen elements. The Si₃N₄ ceramics containing rod-like grains and grain boundaries were fabricated by focused ion beam technique. TEM observations revealed that magnesium existed as an amorphous phase and that yttrium produced a new secondary phase.     

Mechanical properties and thermal conductivity of dense β-SiAlON ceramics fabricated by two-stage spark plasma sintering with Al2O3-AlN-Y2O3 additives

Fully dense β-SiAlON ceramics with excellent mechanical properties and good thermal conductivity were fabricated by two-stage spark plasma sintering (SPS) processes without and with applying pressure respectively, using α-Si₃N₄ powder and 6 Al₂O₃-3 AlN-6 Y₂O₃ (in wt.%, label with 636), 424 and 422 additives. In the first stage SPS process without pressure, the relative dense β-SiAlON ceramics with interlock microstructures of elongated grains and density of 3.14˜3.18 g cm⁻³, hardness of 14.00˜14.82 GPa and fracture toughness of 6.00˜6.63 MPa m^1/2 were obtained by sintering at about 1600 °C for 20 min. In the second stage SPS process at about 1425 °C for 5 min under pressure of 24 MPa, the fully dese β-SiAlON ceramics with density of 3.22˜3.24 g cm⁻³, high hardness of 15.68˜15.95 GPa, high fracture toughness of 6.38˜7.03 MPa m^1/2 and thermal conductivity of 13.5˜19.6 Wm^-1K^-1 were obtained. The reaction between the samples and the graphite mold can be avoided in this fabrication method.     

Effects of yttria and magnesia on densification and thermal conductivity of sintered reaction-bonded silicon nitrides

A variety of combinations of Y₂O₃ and MgO were used as additives in preparing Si₃N₄ ceramics by the sintering of reaction-bonded silicon nitride (SRBSN) method. By varying the amount of Y₂O₃ in the range of 0-5 mol% and that of MgO in the range of 0-8 mol%, the effects of Y₂O₃ and MgO additives on nitridation and sintering behaviors as well as thermal conductivity were studied. It was found that appropriate amount and combination of Y₂O₃ and MgO additives were essential for attaining full densification and achieving high thermal conductivity. The sample doped with 2.5 mol% of Y₂O₃ and 5 mol% of MgO attained a thermal conductivity of 128 Wm⁻¹K⁻¹ when sintered at 1900°C for 6 hours, and the sample doped with 2 mol% of Y₂O₃ and 4 mol% of MgO achieved a thermal conductivity of 156 Wm⁻¹K⁻¹ when sintered for 24 hours.     

Enhanced thermal conductivity in Si3N4 ceramic with the addition of Y2Si4N6C

Si₃N₄ ceramic was densified at 1900°C for 12 hours under 1 MPa nitrogen pressure, using MgO and self‐synthesized Y₂Si₄N₆C as sintering aids. The microstructures and thermal conductivity of as‐sintered bulk were systematically investigated, in comparison to the counterpart doped with Y₂O₃‐MgO additives. Y₂Si₄N₆C addition induced a higher nitrogen/oxygen atomic ratio in the secondary phase by introducing nitrogen and promoting the elimination of SiO₂, resulting in enlarged grains, reduced lattice oxygen content, increased Si₃N₄‐Si₃N₄ contiguity and more crystallized intergranular phase in the densified Si₃N₄ specimen. Consequently, the substitution of Y₂O₃ by Y₂Si₄N₆C led to a great increase in ~30.4% in thermal conductivity from 92 to 120 W m^?1 K^?1 for Si₃N₄ ceramic.     

High thermal conductivity silicon nitride ceramics prepared by pressureless sintering with ternary sintering additives

Silicon nitride ceramics were pressureless sintered at low temperature using ternary sintering additives (TiO₂, MgO and Y₂O₃), and the effects of sintering aids on thermal conductivity and mechanical properties were studied. TiO₂–Y₂O₃–MgO sintering additives will react with the surface silica present on the silicon nitride particles to form a low melting temperature liquid phase which allows liquid phase sintering to occur and densification of the Si₃N₄. The highest flexural strength was 791(±20) MPa with 12 wt% additives sintered at 1780°C for 2 hours, comparable to the samples prepared by gas pressure sintering. Fracture toughness of all the specimens was higher than 7.2 MPa·m^1/2 as the sintering temperature was increased to 1810°C. Thermal conductivity was improved by prolonging the dwelling time and adopting the annealing process. The highest thermal conductivity of 74 W/(m∙K) was achieved with 9 wt% sintering additives sintered at 1810°C with 4 hours holding followed by postannealing.     

Synergistic effect of binary fluoride sintering additives on the properties of silicon nitride ceramics

A variety of combinations of YF₃ and MgF₂ were used as sintering aids in the fabrication of Si₃N₄ ceramics via gas pressure sintering (GPS). The synergistic effects of YF₃ and MgF₂ on the liquid viscosity, mechanical properties, thermal conductivities, and grain growth kinetics of the Si₃N₄ ceramics were investigated. The results showed that appropriately adjusting the YF₃/MgF₂ ratio could decrease liquid viscosity, reducing the diffusion energy barrier of the solute atom and promoting mass transfer. Meanwhile, the chemical bonding strength in the grain boundary complexions formed by the metal cations also influenced grain boundary migration. Samples doped with 4 mol% YF₃ and 2 mol% MgF₂ achieved the lowest grain growth exponent (n = 2.9) and growth activation energy (Q = 616.7 ± 16.5 kJ mol^?1) as well as the highest thermal conductivity (83 W m^?1 K^?1) and fracture toughness (8.82 ± 0.13 MPa m^1/2).     

Influence of α-Si3N4 coarse powder on densification,microstructure, mechanical properties,and thermal behavior of silicon nitride ceramics

Silicon nitride (Si₃N₄) ceramics, with different ratios of fine and coarse α-Si₃N₄ powders, were prepared by spark plasma sintering (SPS) and heat treatment. Further, the influence of coarse α-Si₃N₄ powder on densification, microstructure, mechanical properties, and thermal behavior of Si₃N₄ ceramics was systematically investigated. Compared with fine particles, coarse particles exhibit a slower phase transition rate and remain intact until the end of SPS. The remaining large-sized grains of coarse α-Si₃N₄ induce extensive growth of neighboring β-Si₃N₄ grains and promote the development of large elongated grains. Noteworthy, an appropriate number of large elongated grains distributed among fine-grained matrix forms bimodal microstructural distribution, which is conducive to superior flexural strength. Herein, Si₃N₄ ceramics with flexural strength of 861.34 MPa and thermal conductivity of 65.76 W m⁻¹ K⁻¹ were obtained after the addition of 40 wt% coarse α-Si₃N₄ powder.     

Effect of seeding on the thermal conductivity of self-reinforced silicon nitride

Thermal conductivity of Si₃N₄ containing large β-Si₃N₄ particles as seeds for grain growth was investigated. Seeds addition promotes growth of β-Si₃N₄ grains during sintering to develop the duplex microstructure. The thermal conductivity of the material sintered at 1900 °C improved up to 106 W m⁻¹ K⁻¹, although that of unseeded material was 77 Wm⁻¹ K⁻¹. Seeds addition leads to reduction of the sintering temperature with developing the duplex microstructure and with improving the thermal conductivity, which benefits in terms of production cost of Si₃N₄ ceramics with thermal conductivity. ©     

Preparation,mechanical and thermal properties of Si3N4 ceramics by gelcasting using low–toxic DMAA gelling system and gas pressure sintering

In this work, Si₃N₄ ceramics were fabricated through an aqueous gelcasting method using a low–toxic monomer called N, N–dimethylacrylamide (DMAA) followed by gas pressure sintering at 1850 °C for 2 h under 6 MPa N₂ atmosphere. The effect of solid loading on performance of slurries, green and sintered bodies was investigated systematically. The results show that the slurries with a solid loading as high as 50 vol% (viscosity 0.17 Pa.s at 100 s^–1) were achieved. With the increase of solid loading (30–50 vol%), the green bodies exhibited a monotonically decreased, however high enough in general, flexural strength of 16.50–11.52 MPa, which was comparable to that of widely–used neurovirulent acrylamide (AM) gelling system. In regard to the sintered bodies, increasing solid loading significantly promoted sintering and improved mechanical properties and thermal conductivity as a result of the increased density, bimodal distribution structure, as well as suitable interfacial bonding strength. The best performance parameters of Si₃N₄ ceramics, bulk density of 3.25 g/cm³, apparent porosity of 0.67%, flexural strength of 898.92 MPa, fracture toughness of 6.42 MPa m^1/2, Vickers hardness of 2.81 GPa, and thermal conductivity of 34.69 W m^–1 K^–1, were obtained at 50 vol% solid loading. This work renders low–toxic DMAA gelling system promising prospect in preparation of high–performance Si₃N₄ ceramics by gelcasting.