Ultra‐Broad Temperature Stability Obtained with Ce‐Doped BaTiO3‐Based Ceramics

Ce‐doped BaTiO₃‐based ceramics were prepared and studied to satisfy ultra‐broad temperature stability (from ?55°C to 300°C, capacitance variation rate based on C_20°C is within ±15%). The sample with 0.6 mol% CeO₂ succeeds to achieve this performance with a remarkably high ceiling temperature of 300°C. Meanwhile, the sample has good dielectric and electrical properties at room temperature (ε_r = 1667, tanδ = 1.478%, ρ_V = 5.9 × 10¹² Ω·cm). Ce ion can substitute for Ti ion as Ce⁴⁺ or Ba ion as Ce³⁺. The substitution decreases the spontaneous polarization of BaTiO₃, and then weakens the ferroelectricity of BaTiO₃. As a result, the temperature stability of samples is improved obviously. Besides, CeO₂ addition promotes the formation of exaggerated grains, which are consisting of Ba₆Ti₁₇O₄₀.     

Temperature-independent permittivity of xBaTiO3–(1−x)(0.5Bi(Mg1/2Ti1/2)O3–0.5BiScO3) ceramics

xBaTiO₃–(1−x)(0.5Bi(Mg_1/2Ti_1/2)O₃-0.5BiScO₃) or xBT–(1−x)(0.5BMT–0.5BS) (x=0.45–0.60) ceramics were prepared by using the conventional mixed oxide method. Perovskite structure with pseudo-cubic symmetry was observed in all the compositions. Dielectric measurement results indicated that all the samples showed dielectric relaxation behavior. As the content BaTiO₃ was decreased from 0.60 to 0.45, temperature coefficient of permittivity (TCε) in the range of 200–400 °C was improved from −706 to −152 ppm/°C, while the permittivity at 400 °C was increased from 1208 to 1613. The temperature stability of permittivity was further improved by using 2 mol% Ba-deficiency. It was found that lattice parameter and grain size of the 2 mol% Ba-deficient ceramics were smaller than those of their corresponding stoichiometric (S) counterparts, with TCε in the range of 200–400 °C to be improved noticeably. For example, TCε of the Ba-deficiency sample with x=0.45 was −75 ppm/°C in the temperature range of 200–400 °C and the permittivity was 1567 at 400 °C. The results obtained in this work indicated that xBT–(1−x)(0.5BMT–0.5BS) ceramics are very promising candidates for high temperature capacitor applications.     

Structure Property Relationship in BaTiO3–Na0.5Bi0.5TiO3–Nb2O5–NiO X8R System

A novel BaTiO₃–Na_0.5Bi_0.5TiO₃–Nb₂O₅–NiO (BT‐NBT‐Nb‐Ni) system that meets the X8R specification (?55°C–150°C, ΔC/C≤±15%) of multilayer ceramic capacitors (MLCCs) was fabricated, with a maximum dielectric constant of 2350 at room temperature (25°C). Core–shell microstructure was observed by transmission electron microscopy (TEM), accounting for the good dielectric temperature stability. The role of Ni on the formation of core–shell structure and phase structure, and the subsequent relationship between structure and dielectric/ionic conduction properties were investigated. It was observed that the addition of Ni could adjust the ratio of core/shell, and significantly reduces the dielectric loss over the studied temperature range. A new Ba₁₁(Ni, Ti)₂₈O_66+x phase with a 10‐layer close‐packed structure was identified by X‐ray diffraction (XRD), serving as a source of oxygen vacancies for ionic conduction in addition to Ba(Ni,Ti)O₃. Furthermore, the impedance spectroscopy measurements demonstrated the remarkable impact of these Ni‐induced oxygen vacancies on both the grain and grain‐boundary conductivities.     

High Electric‐Induced Strain and Temperature‐Dependent Piezoelectric Properties of 0.75BF–0.25BZT Lead‐Free Ceramics

0.75BiFeO₃–0.25Ba(Zr_xTi_1?x) + 0.6 wt% MnO₂ (0.75BF–0.25BZT) ceramics with Mn addition were prepared by the solid‐state reaction method. The high‐field strain and high‐temperature piezoelectric properties of 0.75BF–0.25BZT ceramics were studied. Introduction of Zr in the solid solutions decreased the Curie temperature slightly, and improved the dielectric and piezoelectric properties obviously. The piezoelectric properties of 0.75BZT–0.25BT ceramics reached the maximum at Zr content of 10 mol%. The Curie temperature T_c, dielectric constant ε and loss tanδ (1 kHz), piezoelectric constant d₃₃, and planner electromechanical coupling factor k_p of 0.75BF–0.25BZT ceramics with 10 mol% Zr were 456°C, 650, 5%, 138 pC/N, and 0.30, respectively. The high‐field bipolar and unipolar strain under an electric field of 100 kV/cm reached up to 0.55% and 0.265%, respectively, which were comparable to those of BiScO₃–PbTiO₃ and “soft” PZT‐based ceramics. The typical “butterfly”‐shaped bipolar strain and frequency‐dependent peak‐to‐peak strain indicated that the large high‐field‐induced strain may be due to non‐180° domain switching. Rayleigh analysis reflected that the improved piezoelectric properties resulted from the enhanced extrinsic contribution by Zr doping. The unipolar strain of 0.75BF‐0.25BZT ceramics with 10 mol% Zr was almost linear from RT to 200°C. These results indicated that 0.75BF–0.25BZT ceramics were promising candidates for high‐temperature and lead‐free piezoelectric actuators.     

Sol–Gel Synthesis and Characterization of Na0.5Bi0.5TiO3–NaTaO3Thin Films

Thin films with the composition 70 mol% Na_0.5Bi_0.5TiO₃ + 30 mol% NaTaO₃ were prepared by sol–gel synthesis and spin coating. The influence of the annealing temperature on the microstructural development and its further influence on the dielectric properties in the low‐ (kHz–MHz) and microwave‐frequency (15 GHz) ranges were investigated. In the low‐frequency range we observed that with an increasing annealing temperature from 550°C to 650°C the average grain size increased from 90 to 170 nm, which led to an increase in the dielectric permittivity from 130 to 240. The temperature‐stable dielectric properties were measured for thin films annealed at 650°C in the temperature range between ?25°C and 150°C. The thin films deposited on corundum substrates had a lower average grain size than those on Si/SiO₂/TiO₂/Pt substrates. The highest average grain size of 130 nm was obtained for a thin film annealed at 600°C, which displayed a dielectric permittivity of 130, measured at 15 GHz.     

Low‐Temperature Dielectric Relaxations Associated with Mixed‐Valent Structure in Na0.5Bi0.5Cu3Ti4O12

We, herein, present comparative investigations on the Na_0.5Bi_0.5Cu₃Ti₄O₁₂ ceramic samples with and without 10 mol% excess of Na/Bi. The samples were prepared by the standard solid‐state reaction technique. The dielectric properties of the sample were investigated in the temperature (93–320 K) and frequency (20 Hz–10 MHz) windows. Three thermally activated dielectric relaxations observed in Na_0.5Bi_0.5Cu₃Ti₄O₁₂ with the activation energies of 0.104, 0.267, and 0.365 eV for the low‐, middle‐, and high‐temperature dielectric relaxations, respectively. Only the low‐temperature relaxation was observed in both Na and Bi excessive samples. X‐ray photoemission spectroscopy results revealed the mixed‐valent structures of Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺ in Na_0.5Bi_0.5Cu₃Ti₄O₁₂ sample, but only Ti³⁺/Ti⁴⁺ in Na and Bi excessive samples. Our results showed that the dielectric properties of the investigated samples are strongly linked with these mixed‐valent structures. The high‐ and low‐temperature relaxations were attributed to be a polaron‐type relaxation due to localized carriers hopping between Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺, respectively. The middle‐temperature relaxation is suggested to be a dipole‐type relaxation caused by the defect complex of bismuth and oxygen vacancies.     

Microstructure and Electrical Properties of Nonstoichiometric 0.94(Na0.5Bi0.5+x)TiO3–0.06BaTiO3 Lead‐Free Ceramics

0.94(Na_0.5Bi_0.5+x)TiO₃–0.06BaTiO₃ (x = ?0.04, 0, 0.02; named NB_0.46T‐6BT, NB_0.50T‐6BT, NB_0.52T‐6BT, respectively) lead‐free piezoelectric ceramics were prepared via the solid‐state reaction method. Effects of Bi³⁺ nonstoichiometry on microstructure, dielectric, ferroelectric, and piezoelectric properties were studied. All ceramics show typical X‐ray diffraction peaks of ABO₃ perovskite structure. The lattice parameters increase with the increase in the Bi³⁺ content. The electron probe microanalysis demonstrates that the excess Bi₂O₃ in the starting composition can compensate the Bi₂O₃ loss induced during sample processing. The size and shape of grains are closely related to the Bi³⁺ content. For the unpoled NB_0.50T‐6BT and NB_0.52T‐6BT, there are two dielectric anomalies in the dielectric constant–temperature curves. The unpoled NB_0.46T‐6BT shows one dielectric anomaly accompanied by high dielectric constant and dielectric loss at low frequencies. After poling, a new dielectric anomaly appears around depolarization temperature (T_d) for all ceramics and the T_d values increase with the Bi³⁺ amount decreasing from excess to deficiency. The diffuse phase transition character was studied via the Curie–Weiss law and modified Curie–Weiss law. The activation energy values obtained via the impedance analysis are 0.69, 1.05, and 1.16 eV for NB_0.46T‐6BT, NB_0.50T‐6BT and NB_0.52T‐6BT, respectively, implying the change in oxygen vacancy concentration in the ceramics. The piezoelectric constant, polarization, and coercive field of the ceramics change with the variation in the Bi³⁺ content. The Rayleigh analysis suggests that the change in electrical properties of the ceramics with the variation in the Bi³⁺ amount is related to the effect of oxygen vacancies.     

Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of MgF2‐Doped Diopside Ceramics

A new low‐fired dielectric material derived from CaMg_0.9Zn_0.1Si₂O₆ (CMZS) ceramics with high quality factor was synthesized by solid‐state reaction method. The effects of MgF₂ addition on the sinterability, phase composition, crystal defects, and microwave dielectric properties of CMZS were investigated. MgF₂ was proved not only to lower the sintering temperature to ~1000°C but also to remarkably modify the microwave dielectric properties of CMZS. In addition to the main diopside phase, forsterite was identified as the secondary phase in all MgF₂‐doped samples. Dielectric temperature spectra showed that MgF₂ induced significant dielectric relaxations associated with oxygen vacancy defects to CMZS. Thermally stimulated depolarization current was, therefore, considered to obtain the defects associated with extrinsic microwave dielectric loss mechanisms. Compared with undoped CMZS, although the concentration of oxygen vacancies showed a notable increase in the 5 wt% MgF₂‐doped CMZS, the Q×f values were still improved. Here, with proper MgF₂‐doping, it demonstrated that the microwave dielectric loss was basically influenced by phase composition. The excellent characteristics of ε_r = 7.78, Q×f = 151 800 GHz, and τ_f = ?26.40 ppm/°C were achieved from the 5 wt% MgF₂‐doped specimens sintered at 1000°C.     

Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of (1−x)Ba(Mg1/3Nb2/3)O3–xBaSnO3 Solid Solutions

Microwave dielectric ceramics of (1?x)Ba(Mg_1/3Nb_2/3)O₃‐xBaSnO₃ [(1?x)BMN‐xBS] with high quality factors was synthesized by the solid‐state reaction method. The effects of BaSnO₃ additions (x = 0–0.2) on the sinterability, crystal structures, microwave dielectric properties, and microwave dielectric loss mechanisms of BMN were investigated systematically. The degree of 1:2 cation ordering was decreased with increasing Sn content and eventually faded away as x ≥ 0.1, where the low‐temperature relaxations disappeared coincidently through the thermally stimulated depolarization current technique. It was supposed to be the short‐range misplacements of the B‐site cations within the long‐range ordered structure. Meanwhile, the high‐temperature relaxations associated with the in‐grain oxygen vacancies were found in all the title compounds. Though the concentrations of oxygen vacancies of 0.8BMN‐0.2BS were higher than BMN, high Q × f values could also be obtained even in the absence of 1:2 cation ordering. Specifically, the excellent characteristics like ε_r = 29.02, Q × f = 90 000 GHz and τ_f = 6.3 ppm/°C were achieved in the specimens of x = 0.2 sintered at 1450°C.     

Sintering behavior,structural phase transition,and microwave dielectric properties of La1‐xZnxTiNbO6‐x/2 ceramics

La_1‐xZn_xTiNbO_6‐x/2 (LZTN‐x) ceramics were prepared via a conventional solid‐state reaction route. The phase, microstructure, sintering behavior, and microwave dielectric properties have been systematically studied. The substitution of a small amount of Zn²⁺ for La³⁺ was found to effectively promote the sintering process of LTN ceramics. The corresponding sintering mechanism was believed to result from the formation of the lattice distortion and oxygen vacancies by means of comparative studies on La‐deficient LTN ceramics and 0.5 mol% ZnO added LTN ceramics (LTN+0.005ZnO). The resultant microwave dielectric properties of LTN ceramics were closely correlated with the sample density, compositions, and especially with the phase structure at room temperature which depended on the orthorhombic‐monoclinic phase transition temperature and the sintering temperature. A single orthorhombic LZTN‐0.03 ceramic sintered at 1200°C was achieved with good microwave dielectric properties of ε_r~63, Q×f~9600 GHz (@4.77 GHz) and τ_f ~105 ppm/°C. By comparison, a relatively high Q × f~80995 GHz (@7.40 GHz) together with ε_r~23, and τ_f ~?56 ppm/°C was obtained in monoclinic LTN+0.005ZnO ceramics sintered at 1350°C.     

Low‐Temperature Sintering Li2MoO4/Ni0.5Zn0.5Fe2O4 Magneto‐Dielectric Composites for High‐Frequency Application

The coexistence of Li₂MoO₄ (LMO) and Ni_0.5Zn_0.5Fe₂O₄ (NZO) has been proven and their low‐temperature‐sintered magneto‐dielectric composites (1?x)LMO–xNZO (volume fraction factor x = 0.1, 0.3, 0.5, 0.7) were prepared by the conventional solid‐state reaction method and were sintered below 700°C. It is found that the optimal sample (x = 0.5) has good and relatively stable magneto‐dielectric performance in the frequency range from 10 MHz to 1 GHz with permittivity between 7.14 and 6.84, dielectric loss tangent between 0.09 and 0.02, and permeability between 5.23 and 3.30, magnetic loss tangent between 0.06 and 0.65, respectively. Furthermore, the verified chemical compatibility with silver indicates that the LMO–NZO ceramics are potential for low‐temperature cofired ceramic application and their multifunctional magneto‐dielectric properties also make them for potential applications in electronic devices.     

A Novel Glass‐Ceramic with Ultra‐Low Sintering Temperature for LTCC Application

In this paper, the phase compositions and the dielectric properties of 3ZnO–2B₂O₃ glass‐ceramic prepared by solid‐state method were investigated. The X‐ray diffraction patterns show that all sintered samples consist of Zn₃B₂O₆ and α‐Zn(BO₂)₂. The dielectric properties changed significantly with the sintering temperature. After sintering at 650°C for 30 min, the glass‐ceramic exhibits optimum dielectric properties: a dielectric constant of 7.5 and a dielectric loss of 0.6 × 10^?3 at 10 MHz. The chemical compatibility with Ag electrode under the co‐fired process illustrates a potential application in low temperature co‐fired ceramic field for the glass‐ceramic.     

Temperature‐stable dielectric and energy storage properties of La(Ti0.5Mg0.5)O3‐doped (Bi0.5Na0.5)TiO3‐(Sr0.7Bi0.2)TiO3 lead‐free ceramics

A new type of (0.7?x)Bi_0.5Na_0.5TiO₃‐0.3Sr_0.7Bi_0.2TiO₃‐xLaTi_0.5Mg_0.5O₃ (LTM1000x, x = 0.0, 0.005, 0.01, 0.03, 0.05 wt%) lead‐free energy storage ceramic material was prepared by a combining ternary perovskite compounds, and the phase transition, dielectric, and energy storage characteristics were analyzed. It was found that the ceramic materials can achieve a stable dielectric property with a large dielectric constant in a wide temperature range with proper doping. The dielectric constant was stable at 2170 ± 15% in the temperature range of 35‐363°C at LTM05. In addition, the storage energy density was greatly improved to 1.32 J/cm³ with a high‐energy storage efficiency of 75% at the composition. More importantly, the energy storage density exhibited good temperature stability in the measurement range, which was maintained within 5% in the temperature range of 30‐110°C. Particularly, LTM05 show excellent fatigue resistance within 10⁶ fatigue cycles. The results show that the ceramic material is a promising material for temperature‐stable energy storage.     

Ultra‐Wide Temperature Stable Dielectrics Based on Bi0.5Na0.5TiO3–NaNbO3 System

The microstructure, phase structure, ferroelectric, and dielectric properties of (1?x)Bi_0.5Na_0.5TiO₃‐xNaNbO₃ [(1?x)BNT‐xNN] ceramics conventionally sintered in the temperature range of 1080°C–1120°C were investigated as a candidate for capacitor dielectrics with wide temperature stability. Perovskite phase with no secondary impurity was observed by XRD measurement. With increasing NN content, (1?x)BNT‐xNN was found to gradually transform from ferroelectric (x = 0–0.05) to relaxor (x = 0.10–0.20) and then to paraelectric state (x = 0.25–0.35) at room temperature, indicated by P–I–E loops analysis, associated with greatly enhanced dielectric temperature stability. For the samples with x = 0.25–0.35, the temperature coefficient of capacitance (TCC) was found <11% in an ultra‐wide temperature range of ?60°C–400°C with moderate dielectric constant and low dielectric loss, promising for temperature stable capacitor applications.     

Ultra‐Low Temperature Sintering and Dielectric Properties of SiO2‐Filled Glass Composites

Ultra low temperature co‐fired ceramics system based on zinc borate 3ZnO–2B₂O₃ (3Z2B) glass matrix and SiO₂ filler was investigated with regard to the phase composition, the microstructure and the dielectric properties as functions of the filler content and sintering temperature. The softening temperature of 554°C and the crystallization temperature of around 650°C for the glass were confirmed by Differential Thermal Analysis result. The X‐ray diffraction results show that all SiO₂‐filled samples were made up of SiO₂, α‐Zn(BO₂)₂, Zn₃B₂O₆ phases. And there was no chemical reaction between SiO₂ and the glass during densification. And then the dielectric constant decreased with the increasing content of SiO₂. At the level of 15 wt% SiO₂ addition, the composites can be densified at a sintering temperature of 650°C for 30 min, and showed the optimal dielectric properties at 1 MHz with the dielectric constant of 6.1 and the dielectric loss of 1.3 × 10^?3, which demonstrates a good potential for use in LTCC technology.     

Effect of High‐Temperature Aging on the Fracture Toughness of 40 mol% Ceria‐Stabilized Zirconia

The 40 mol% CeO₂‐stabilized ZrO₂ ceramic was synthesized by the sol‐spray pyrolysis method and aged at 1400°C–1600°C. The effects of high‐temperature aging on its fracture toughness were investigated after heat treatments at 1500°C for 6–150 h in air. Characterization results indicated that the activation energy for grain growth of 40 mol% CeO₂‐stabilized ZrO₂ was 593 ± 47 kJ/mol. The average grain size of this ceramic varied from 1.4 to 5.6 μm within the aging condition of 1500°C for 6–150 h. The Ce‐lean tetragonal phase has a constant tetragonality (ratio of the c‐axis to a‐axis of the crystal lattice) of 1.0178 during the aging process. It was found that the fracture toughness of 40 mol% CeO₂‐stabilized ZrO₂ was determined to be 2.0 ± 0.1 MPa·m^1/2, which did not vary significantly with prolonging aging time. Since no monoclinic zirconia was detected in the regions around the indentation crack‐middle and crack‐tip, the high fracture toughness maintained after high‐temperature aging can be attributed to the remarkable stability of the tetragonal phase in 40 mol% CeO₂‐stabilized ZrO₂ composition.     

Facile Synthesis of “Quench‐Free Glass” and Ceramic‐Glass Composite for LTCC Applications

The 10 mol% ZnO–2 mol% B₂O₃–8 mol% P₂O₅–80 mol% TeO₂ (ZBPT) glass was prepared by quenching as well as slowly cooling the melt. The ZBPT glass prepared by both methods show similar microwave dielectric properties. ZBPT glass has an ε_r of 22.5 (at 7 GHz), Q_u × f of 1500 GHz, and τ_f of ?100 ppm/°C. The ceramic‐glass composites of Sr₂ZnTeO₆ (SZT) and ZBPT is prepared through two convenient methods: (a) conventional way of co‐firing the ceramic with ZBPT glass powder and (b) a nonconventional facile route by co‐firing the ceramic with precursor oxide mixture of ZBPT glass at 950°C. In the former route, SZT + 5 wt% ZBPT composite sintered at 950°C showed moderately good microwave dielectric properties (ε_r = 13.4, Q_u × f = 4500 GHz and τ_f = ?52 ppm/°C). Although the SZT + 5 wt% ZBPT composite prepared through the nonconventional method also showed similar microwave dielectric properties (ε_r = 13.8, Q_u × f = 5300 GHz and τ_f = ?50 ppm/°C), the synthesis procedure is much simplified in the latter case. The composites are found to be chemically compatible with Ag. The composite containing 5 wt% ZBPT prepared through conventional and nonconventional ways shows linear coefficients of thermal expansion of 7.0 ppm/°C and 7.1 ppm/°C, respectively. Both the composites have a room‐temperature thermal conductivity of 2.1 Wm^?1 K^?1.     

Composition‐Dependent Microstructures and Properties of La‐, Zn‐, and Cr‐Modified 0.675BiFeO3–0.325BaTiO3 Ceramics

Pure and 1.0 mol% La₂O₃, ZnO, and Cr₂O₃‐modified 0.675BiFeO₃–0.325BaTiO₃ (BF–BT) multiferroic ceramics were prepared and comparatively investigated. For pure and La‐, Zn‐, and Cr‐modified BF–BT, the average grain size is 415, 325, 580, and 395 nm, and the maximum dielectric constant temperature is 460°C, 430°C, 465°C, and 445°C, respectively. All additives weaken the ferroelectricity slightly. Zn‐ and Cr‐modifications dramatically enhance the room‐temperature magnetic properties, whereas La‐modification has almost no effect on magnetic property. Especially, the Cr‐modified BF–BT ceramics show switchable polarization and magnetization of 4.9 μC/cm² and 0.27 emu/g at room temperature, the magnetoelectric coupling is confirmed by the magnetization‐magnetic field curves measured on ceramics before and after electric poling. The mechanism responsible for the different effects of additive on microstructures and properties are discussed based on additive‐induced point defect and second phase as well as diffusion‐induced substitution. These results not only provide a promising room‐temperature multiferroic material candidate, but also are helpful to design new multiferroic materials with enhanced properties.     

Resistivity Enhancement and Transport Mechanisms in (1 − x)BaTiO3–xBi(Zn1/2Ti1/2)O3 and (1 − x)SrTiO3–xBi(Zn1/2Ti1/2)O3

Ceramics of composition (1?x)BaTiO₃–xBi(Zn_1/2Ti_1/2)O₃ (BT‐BZT) were prepared by solid‐state synthesis; they have been shown to exhibit excellent properties suited for high‐temperature dielectric applications. The X‐ray diffraction data showed a single‐phase perovskite structure for all the compositions prepared (x ≤ 0.1 BZT). The compositions with less than 0.075 BZT exhibited tetragonal symmetry at room temperature and pseudo‐cubic symmetry above it. Most notably, a significant improvement in insulation properties was measured with the addition of BZT. Both low‐field AC impedance and high‐field direct DC measurements indicated an increase in resistivity of at least two orders of magnitude at 400°C with the addition of just 0.03 BZT (~10⁷ Ω‐cm) into the solid solution as compared to pure BT (~10⁵ Ω‐cm). This effect was also evident in dielectric loss data, which remained low at higher temperatures as the BZT content increased. In conjunction with band gap measurements, it was also concluded that the conduction mechanism transitioned from extrinsic for pure BT to intrinsic for 0.075 BZT suggesting a change in the fundamental defect equilibrium conditions. It was also shown that this improvement in insulation properties was not limited to BT‐BZT, but could also be observed in the paraelectric SrTiO₃–BZT system.     

Investigation of the Structure and Electrical Properties of (KxNa0.96−xLi0.04)(Nb0.96−yTaySb0.04)O3 Piezoelectric Ceramics Modified with Manganese

The effect of high doping levels of manganese (Mn) on the structure and electrical properties of (K_xNa_1?x)NbO₃ (KNN) ceramics containing Li, Ta, and Sb has been investigated. The samples were measured using synchrotron X‐ray diffraction whereas Rietveld refinement with Fullprof was used to determine the structural information as a function of temperature. Temperature‐dependent dielectric measurement was used to compare the phase transition temperatures. The results show that Mn decreases the temperature range of phase coexistence between the orthorhombic and tetragonal phase from ~180°C to ~120°C. The Curie temperature remained unchanged with Mn addition while the dielectric constant and dielectric loss increased with Mn addition. High amounts of Mn led to a reduction in both piezoelectric and ferroelectric properties. The remnant polarization, remnant strain, and piezoelectric coefficient values decreased from 24 μC/cm², 0.000824, 338 ± 37 pm/V to 13 μC/cm², 0,00014 and 208 ± 27 pm/V, respectively for the undoped and 5 mol% Mn‐doped sample.