Y2O3对高热导率Si3N4陶瓷显微结构和性能的影响

以氧含量相对较高的“平价”Si₃N₄粉体(氧含量1.85%(质量分数))为原料,Y₂O₃-MgO作为烧结助剂,制备低成本高热导率Si₃N₄陶瓷,研究Y₂O₃含量对Si₃N₄陶瓷致密化、显微结构、力学性能及热导率的影响。结果表明,适当增加Y₂O₃的加入量不仅可以促进Si₃N₄陶瓷的致密化和显微结构的细化,还有助于晶格氧含量的降低和热导率的提升。Y₂O₃含量为7%(质量分数)的样品在1 900 ℃烧结后的综合性能最佳,其相对密度、抗弯强度、断裂韧性和热导率分别为99.5%、(726±46) MPa、(6.9±0.2) MPa·m^1/2和95 W·m^-1·K^-1。     

La2O3对镁铝尖晶石透明陶瓷致密化及其性能的影响

镁铝尖晶石透明陶瓷兼具了良好的光学和力学性能,在军、民两用领域有着广泛的实际和潜在应用前景。由于其致密化速率低,在烧结过程中往往需要引入烧结助剂。稀土倍半氧化物熔点高,高温不易挥发,近些年被证实可以促进镁铝尖晶石陶瓷的致密化,但其促烧机理尚不明确。本文以高纯商业化镁铝尖晶石粉体为原料,La₂O₃为烧结助剂,采用无压预烧结合热等静压烧结,制备镁铝尖晶石透明陶瓷,通过XRD、SEM、紫外-可见分光光度计、万能试验机等测试手段对其致密化过程及其力学和光学性能进行表征和分析,研究了La₂O₃对镁铝尖晶石透明陶瓷致密化过程的影响规律和作用机制。结果表明,La₂O₃通过与尖晶石反应或固溶产生晶格畸变,增加缺陷浓度,从而起到促进致密化的作用,一定程度上降低了预烧温度和热等静压温度。对于190 MPa、1 500 ℃热等静压烧结3 h的样品,La₂O₃掺杂可以显著提高紫外区域的透过率;同时,La偏析到晶粒表面,抑制了尖晶石晶粒的生长,从而提高了样品的力学强度。掺杂0.05%(质量分数)La₂O₃样品较未掺的样品,400 nm处透过率从63%提高到81%,弯曲强度从263.7 MPa提高至319.0 MPa,断裂韧性从1.69 MPa·m^1/2提高至1.82 MPa·m^1/2。     

La3+对MgAl2O4透明陶瓷致密化过程、光学及力学性能的影响

镁铝尖晶石(MgAl₂O₄)透明陶瓷具有优异的光学和力学性能,在防弹装甲窗口、高马赫整流罩等方面得到了大量的应用。为实现MgAl₂O₄透明陶瓷的致密化,一般需要相对较高的烧结温度,然而高的烧结温度会导致陶瓷晶粒生长过大,影响其性能。因此通过引入合适的烧结助剂降低烧结温度,对于提升陶瓷性能和降低成本均具有很大的意义。本文以高纯商业MgAl₂O₄粉体为原料,La(OH)₃为烧结助剂,采用真空烧结结合热等静压后处理的方式,成功制备MgAl₂O₄透明陶瓷,并采用XRD、SEM等对透明陶瓷的微结构和相组成的演变以及性能进行表征。结果表明,La³⁺在烧结早中期可有效提高陶瓷致密化速率,在烧结后期可抑制陶瓷晶粒生长。掺入0.01%(质量分数)La₂O₃后,MgAl₂O₄光学和力学综合性能优异,所需...     

冰刀用高强韧Si3N4陶瓷的制备与性能研究

以α-Si₃N₄粉为原料,MgO-La₂O₃-Lu₂O₃为三元复合烧结助剂,采用气压烧结工艺制备Si₃N₄陶瓷条,研究烧结助剂及添加β-Si₃N₄增强相对Si₃N₄陶瓷微观结构及力学性能的影响。结果表明,三元复合烧结助剂促进了烧结的致密化,提高了材料的力学性能,在最高烧结温度1 750 ℃、复合烧结助剂添加量8%(质量分数)时,得到密度为3.172 8 g/cm³、维氏硬度达到15.85 GPa、断裂韧性和抗弯强度分别为9.69 MPa·m^1/2和1 029 MPa的冰刀用Si₃N₄陶瓷。添加β-Si₃N₄材料的断裂韧性得到提高,最高达到10.33 MPa·m^1/2。Si₃N₄陶瓷本身的高硬度与加入的稀土氧化物使得所制备冰刀的硬度与润滑性能得到提高,表面性能优良。     

添加过渡金属化合物对氮化硅显微组织的影响

由于较高的综合力学性能，氮化硅陶瓷球得到广泛的工程应用，但是极端工况下依然存在明显失效开裂现象。在一般氧化物烧结助剂的基础上添加少量过渡金属化合物能起到优化材料设计和进一步提高性能的作用，但是相关作用机理还未有明确探知。在添加Al₂O₃和Y₂O₃烧结助剂基础上，分别添加TiN、Fe₃Si和WC等过渡金属化合物，并采用热等静压烧结方法制备了氮化硅陶瓷轴承球。采用X射线衍射检测其物相组成，采用扫描电子显微镜和透射电子显微镜研究其组织结构特点，并使用纳米压痕法对其力学性能进行了研究。结果表明，添加Ti N可有效抑制烧结过程中有害物相Si₂N₂O的生成；添加TiN和WC有利于烧结过程Al和O向氮化硅基体中扩散，形成了Sialon相；添加Fe₃Si则不具有上述作用；添加TiN可获得晶粒尺寸细小均匀的β-Si₃N₄组织；添加Fe₃Si会生成粗大β-Si     

无压烧结氮化硅陶瓷的物理性能研究

以α-Si₃N₄粉末为原料,Y₂O₃和MgAl₂O₄体系为烧结助剂,采用无压烧结方式,研究了烧结温度、保温时间、烧结助剂含量以及各组分配比对氮化硅致密化及力学性能的影响。结果表明:以Y₂O₃和MgAl₂O₄为烧结助剂体系,氮化硅陶瓷在烧结温度为1 600 ℃,保温时间为4 h,烧结助剂含量为12.5%(质量分数),Y₂O₃和MgAl₂O₄质量比为1∶1时,综合性能最好;氮化硅陶瓷显气孔率为0.21%,相对密度为98.10%,抗弯强度为598 MPa,维氏硬度为15.55 GPa。     

ZnO-B2O3玻璃对Li2Zn3Ti4O12-CaTiO3复合陶瓷低温烧结及性能的影响

采用传统固相反应法制备0.94Li₂Zn₃Ti₄O₁₂-0.06CaTiO₃(LZT-CT)复合陶瓷,采用高温熔融法制备ZnO-B₂O₃(ZB)玻璃;以ZB玻璃为烧结助剂,研究了添加不同质量分数(x=0.5%、1.0%、1.5%、2.0%和2.5%)的ZB玻璃对LZT-CT复合陶瓷的烧结特性、物相组成、微观结构以及微波介电性能的影响。结果表明:ZB玻璃能有效地将LZT-CT复合陶瓷的烧结温度从1 175 ℃降低到875 ℃,并促进了LZT-CT复合陶瓷的致密化。当ZB玻璃掺量x≤2.5%时,LZT-CT复合陶瓷中除了LZT、CT相,没有出现其他新相。随着ZB玻璃添加量增加,复合陶瓷的体积密度、介电常数(ε_r)、品质因数(Q×f)均先增加后减小,谐振频率温度系数(τ_f)变化不大,在(-2.25~4.51)×10^-6/℃波动。当ZB玻璃掺量为2.0%时,LZT-CT复合陶瓷在875 ℃烧结2 h,获得最大体积密度(4.22 g/cm³)以及优异的微波介电性能,ε_r=23.9,Q×f=58 595 GHz,τ_f=-0.14×10^-6/℃。     

TiO2的添加对铝铬固溶体烧结动力学的影响

铝铬固溶体被广泛应用于耐火材料,其烧结致密化较难,添加一定量的烧结助剂有利于提高铝铬固溶体的致密程度,但对于致密化过程中的晶粒生长规律尚不清楚。在本工作中以纳米η-Al₂O₃和工业铬绿为原料,加入烧结助剂TiO₂,并以PVA作为结合剂,经过冷等静压成型后在常压下1 400~1 700 ℃进行固相烧结制备摩尔比1∶1的烧结铝铬固溶体。利用Archimedes法、XRD、SEM、Nano measurer等手段分析了烧后试样的致密度、物相组成、显微结构和平均晶粒尺寸,在此基础上进一步计算研究了TiO₂的添加对铝铬固溶体的烧结动力学的影响。结果表明:在烧结过程中,Al₂O₃-Cr₂O₃和Al₂O₃-Cr₂O₃-2%TiO₂烧结体系的晶粒生长指数和晶粒生长活化能均随温度升高而减小;Al₂O₃-Cr₂O₃体系晶粒生长主要受原子随机越过晶界和体积扩散两种机制控制,Al₂O₃-Cr₂O₃-2%TiO₂体系晶粒生长主要受体积扩散控制;对比两种体系发现TiO₂的添加能使样品的晶粒生长指数和晶粒生长活化能下降,促进晶粒生长发育。     

Cr2O3掺杂在氧化锆增韧氧化铝陶瓷中呈色性能的研究

1600℃常压烧结制备了氧化锆增韧氧化铝(ZTA)陶瓷，研究添加Cr₂O₃在ZTA陶瓷中的呈色性能是否优异。结果表明：适量的Cr₂O₃加入ZTA陶瓷中会固溶进Al₂O₃，烧结后样品均呈现出粉红色，并且随着Cr₂O₃添加量的增大，样品对可见光(400～700 nm)的反射率逐渐下降，即粉色不断加深，样品颜色的明度值不断下降，饱和度不断上升，a^*值始终大于零且数值不断增大，也说明样品的粉色不断加深。测试其力学性能发现：当Cr₂O₃添加后，小幅提高样品的力学性能，在添加量为0.7wt.%左右时，达到最大值；但添加量超过0.7wt.%时，样品的力学性能和致密度有小幅下降，原因可能是过量的Cr₂O₃加入后，导致了样品内部气孔增多。     

烧结助剂添加量对微波烧结3Y-TZP/Al2O3复相陶瓷性能的影响

本文分别以TiO2和MgO纳米粉体为烧结助剂,采用微波烧结技术制备了3Y-TZP/Al2O3复相陶瓷.研究了烧结助剂含量对材料相组成、致密化及力学性能的影响,通过XRD分析了复相陶瓷中t-ZrO2相的相对量变化,并采用SEM观察了弯曲断裂断口形貌.结果表明:随烧结助剂添加量的增加,微波烧结复相陶瓷的致密度、硬度和弯曲强度均有所增加,均优于传统烧结性能,陶瓷颗粒更细.烧结助剂添加量为0.2wt％ MgO、0.4wt％ TiO2,在1300℃微波烧结30 min时试样的致密度为98.1％,显微硬度和抗弯强度分别达18.9 GPa和626 MPa.     

Oxidation behavior of hot-pressed Si3N4 with Re2O3 (Re=Y, Yb, Er, La)

Four different β-Si₃N₄ ceramics with silicon oxynitrides [Y₁₀(SiO₄)₆N₂, Yb₄Si₂N₂O₇, Er₂Si₃N₄O₃, and La₁₀(SiO₄)₆N₂, respectively] as secondary phases have been fabricated by hot-pressing the Si₃N₄–Re₄Si₂N₂O₇ (Re=Y, Yb, Er, and La) compositions at 1820°C for 2 h under a pressure of 25 MPa. The oxidation behavior of the hot-pressed ceramics was characterized and compared with that of the ceramics fabricated from Si₃N₄–Re₂Si₂O₇ compositions. All Si₃N₄ ceramics investigated herein showed a parabolic weight gain with oxidation time at 1400°C and the oxidation products of the ceramics were SiO₂ and Re₂Si₂O₇. The Si₃N₄–Re₄Si₂N₂O₇ compositions showed inferior oxidation resistance to those from Si₃N₄–Re₂Si₂O₇ compositions, owing to the incompatibility of the secondary phases of those ceramics with SiO₂, the oxidation product of Si₃N₄. Si₃N₄ ceramics from a Si₃N₄–Er₄Si ₂N₂O₇ composition showed the best oxidation resistance of 0·198 mg cm⁻² after oxidation at 1400°C for 192 h in air among the compositions investigated herein.     

Sintering of Si3N4 with liquid in the system Ce2O3---AIN---SiO2

Liquid phase sintering of Si₃N₄ with melts from the system Ce₂O₃---AIN---SiO₂ has been studied. The glass forming region in this system and the reaction products formed during sintering at 1750–1800°C were analysed. Sintering of Si₃N₄ with two melt compositions selected from outside the glass forming region yields fully dense Si₃N₄. Post sintering treatment at 1300°C resulted in devitrification with consequent improvement of high temperature mechanical properties. The mechanical properties of Si₃N₄ sintered with liquids in the system Ce₂O₃---AIN---SiO₂ were found to be inferior to those of liquids selected from Y₂O₃---AIN---SiO₂, but superior to those selected from the system MgO---AIN---SiO₂.     

Effect of atmosphere on the reaction sintering of Si2N2O

The reaction sintering of Si₂N₂O from an equimolar mixture of Si₃N₄ and SiO₂ with 5 wt% Al₂O₃ addition was investigated in 98 or 980 kPa N₂ at 1600–1850°C. At the initial stage, Si₃N₄ densification occurred through a liquid phase of SiO₂---Al₂O₃ system. Further densification was observed together with the formation and exaggerated grain growth of Si₂N₂O. High N₂ pressure was useful for the prevention of thermal decomposition of Si₂N₂O and bloating of the compact. Among various packing powders, which have various SiO partial pressures, an equimolar mixture of Si₃N₂O and SiO₂ was the most effective for the densification. The effect of N₂ and packing powder on reaction sintering of Si₂N₂O was discussed in relation to observed kinetics and thermodynamic calculations. Bending strength of sintered materials was 310–320 MPa.     

钨添加对Si3N4陶瓷力学性能的影响及强韧化机理研究

为了增韧Si₃N₄基陶瓷材料,以钨(W)作为第二相材料,Y₂O₃-Al₂O₃作为烧结助剂,采用气压烧结法制备了W/Si₃N₄复合陶瓷材料。研究了W含量对W/Si₃N₄复合陶瓷材料致密性、力学性能以及结构的影响。结果表明:在W含量小于5%(质量分数)时,样品致密度均达97%以上;在W含量为5%(质量分数)时,获得的W/Si₃N₄复合陶瓷材料综合性能最佳,弯曲强度、硬度和断裂韧性分别为(670.28±40.00) MPa、(16.42±0.22) GPa和(8.04±0.16) MPa·m^1/2,相比于未添加金属W的Si₃N₄陶瓷材料分别提高了38.08%、13.08%和44.34%;通过分析W/Si₃N₄复合陶瓷材料样品抛光面和压痕裂纹的微观结构,发现W的引入能促使裂纹在扩展路径上更易发生偏转、分叉等增韧机制,消耗裂纹扩展能量,从而改善Si₃N₄陶瓷的断裂韧性。     

羟基化结合硅烷偶联剂改性对光固化Si3N4膏料性能的影响

采用羟基化结合硅烷偶联剂(KH560)对氮化硅(Si₃N₄)粉体进行表面功能化改性,配制出高固含量、高固化深度的Si₃N₄膏料,并基于立体光固化(SL)工艺制备了高强度的Si₃N₄复杂结构件。结果表明:Si₃N₄表面的KH560改善了粉体与树脂的相容性,降低了Si₃N₄膏料的粘度;同时,KH560的环氧基团(—CH(O)CH₂)与环氧树脂(EA)通过化学键等方式相结合,形成了EA核壳结构,降低了树脂与陶瓷颗粒之间的折射率差,从而提高了Si₃N₄膏料的固化深度。表面羟基化处理后Si₃N₄表面吸附了更多的KH560,从而进一步降低了Si₃N₄膏料的粘度,提高了Si₃N₄膏料的固化深度。最终,用羟基化和KH560改性后的Si₃N₄粉体配制出的Si₃N₄膏料固含量达到50%(体积分数),固化深度达到64 μm。烧结后Si₃N₄试样致密度为83%,断裂韧性为(4.38±0.45) MPa·m^1/2,抗弯强度达到(407.95±10.50) MPa。     

Ferroelectric Ceramics in the PbMg1/3Nb2/3O3-PbCd1/3Nb2/3O3 System

Solid solutions (1-x)PbMg_1/3Nb_2/3O₃ + xPbCd_1/3Nb_2/3O₃ with x = 0-0.30 are investigated with purpose to work out a capacitor ceramics with good dielectric properties and low sintering temperature. It is found that the perovskite phase forms at sintering near to 980°C and begins to decompose at higher temperatures. When x grows from 0 to 0.30, the Curie temperature linearly grows from -10°C to +25°C, the dielectric permittivity ε_m in the Curie point T_C decreases from 18000 to 6800 and the phase transition becomes more diffused. The dielectric permittivity at room temperature is rather high and the temperature stability is improved. The system is of interest, because it can serve as a base for working out some ceramic materials for capacitors with low sintering temperature, which needs of no special atmosphere at burning.     

Yb2O3 and Y2O3 co-doped zirconia ceramics

A suspension stabilizer-coating technique was employed to prepare x mol% Yb₂O₃ (x = 1.0, 2.0, 3.0 and 4.0) and 1.0 mol% Y₂O₃ co-doped ZrO₂ powder. A systematic study was conducted on the sintering behaviour, phase assemblage, microstructural development and mechanical properties of Yb₂O₃ and Y₂O₃ co-doped zirconia ceramics. Fully dense ZrO₂ ceramics were obtained by means of pressureless sintering in air for 1 h at 1450 °C. The phase composition of the ceramics could be controlled by tuning the Yb₂O₃ content and the sintering parameters. Polycrystalline tetragonal ZrO₂ (TZP) and fully stabilised cubic ZrO₂ (FSZ) were achieved in the 1.0 mol% Y₂O₃ stabilised ceramic, co-doped with 1.0 mol% Yb₂O₃ and 4.0 mol% Yb₂O₃, respectively. The amount of stabilizer needed to form cubic ZrO₂ phase in the Yb₂O₃ and Y₂O₃ co-doped ZrO₂ ceramics was lower than that of single phase Y₂O₃-doped materials. The indentation fracture toughness could be tailored up to 8.5 MPa m^1/2 in combination with a hardness of 12 GPa by sintering a 1.0 mol% Yb₂O₃ and 1.0 mol% Y₂O₃ ceramic at 1450 °C for 1 h.     

Al2O3含量对PbO-CaO-B2O3-SiO2系玻璃析晶行为与烧结性能的影响

PbO-CaO-B₂O₃-SiO₂系玻璃粉体是耐高过载低温共烧陶瓷(LTCC)生瓷带的主要组成部分。玻璃粉体的析晶行为影响烧结性能,进而决定基板的使用性能。本文研究了Al₂O₃含量对PbO-CaO-B₂O₃-SiO₂系玻璃析晶行为与烧结性能的影响。结果表明:向PbO-CaO-B₂O₃-SiO₂系玻璃中引入Al₂O₃可抑制玻璃析晶,防止高膨胀晶相的析出,并提高玻璃烧结密度;不含Al₂O₃的PbO-CaO-B₂O₃-SiO₂玻璃粉体析晶峰温度为862 ℃,烧结过程中析出方石英晶相,20~200 ℃的平均线膨胀系数高达260.8×10^-7 ℃^-1;引入2.1%(质量分数)Al₂O₃可显著抑制玻璃析晶,700 ℃烧结后膨胀系数降低至72.9×10^-7 ℃^-1,介电常数显著增大,由6.30提高至7.02。