Dielectric temperature stability of Nb-modified Bi0.5(Na0.78K0.22)0.5TiO3 lead-free ceramics

In this study, the phase structure, microstructure and dielectric properties of Bi_0.5(Na_0.78K_0.22)_0.5(Ti_1-xNb_x)O₃ lead-free ceramics prepared by traditional solid phase sintering method were studied. The second phase pyrochlore bismuth titanate (Bi₂Ti₂O₇) was produced in the system after introduction of Nb⁵⁺. The dielectric constant of the sample (x = 0.03) sintered at 1130 °C at room temperature reached a maximum of 1841, and the dielectric loss was 0.045 minimum. It had been found that the K⁺ and Nb⁵⁺ co-doped Bi_0.5Na_0.5TiO₃ (BNT) lead-free ceramics exhibited outstanding dielectric-temperature stability within 100–400 °C with T_cc ≤±15%. Result of this research provides a valuable reference for application of BNT based capacitors in high temperature field.     

Ternary doping of Na+, Bi3+ and La3+ to improve piezoelectric constant and electrical resistivity simultaneously in calcium bismuth niobate ceramics

High Curie-temperature layer-structured calcium bismuth niobate (CaBi₂Nb₂O₉) piezoelectric ceramics are promising for important application in high-temperature vibration sensors. However, such application is currently limited due to not only poor high-temperature piezoelectric constant (d₃₃), which is attributable to spontaneous polarization along a-b plane and high coercive fields, but also inferior high-temperature electrical resistivity, which results from volatilization of Bi₂O₃ during the sintering process that increases defect concentration of oxygen vacancies. Herein, we report a Na⁺, Bi³⁺ and La³⁺ ternary-doping-strategy to obtain Ca_0.8(Na_0.5La_0.3Bi_0.2)_0.2Bi₂Nb₂O₉ ceramics, which exhibited higher piezoelectric constant and larger electrical resistivity as accompanied by a better thermal stability at high-temperatures. The piezoelectric constant was enhanced from 8.8 pC/N in pristine CaBi₂Nb₂O₉ to 13.4 pC/N in Ca_0.8(Na_0.5La_0.3Bi_0.2)_0.2Bi₂Nb₂O₉ ceramics, which is ascribed to the presence of pseudo-tetragonal structural distortion after La³⁺ doping. In addition, the electrical resistivity at 600 °C was increased by more than one-order of magnitude from 3.7 × 10⁴ Ω cm in pristine CaBi₂Nb₂O₉ to 1.4 × 10⁶ Ω cm in Ca_0.8(Na_0.5La_0.3Bi_0.2)_0.2Bi₂Nb₂O₉ ceramics. Such significant improvement in electrical resistivity results from the reduction in oxygen vacancies due to ternary doping of Na⁺, Bi³⁺ and La³⁺ and stronger binding interaction between La³⁺ dopants and O^2? in (Bi₂O₂)²⁺ layers in Ca_0.8(Na_0.5La_0.3Bi_0.2)_0.2Bi₂Nb₂O₉ ceramics. This work demonstrates an important way of employing chemical doping to improve piezoelectric constant and electrical resistivity simultaneously at high-temperatures to tune structural distortion in bismuth-layered structural CaBi₂Nb₂O₉ ceramics.     

Enhanced energy storage in temperature stable Bi0.5Na0.5TiO3-modified BaTiO3-Bi(Zn2/3Nb1/3)O3 ceramics

Recently, BaTiO₃-BiMeO₃ ceramics have garnered focused research attention due to their outstanding performance, such as thermal stability, energy efficiency and rapid charge-discharge behavior, however, a lower recoverable energy storage density (W_rec) caused by a relatively low P_max (<30 μC/cm²) mainly hinders practical applications. Herein, the energy density and thermal stability are improved by adding a tertiary component, i.e., Bi_0.5Na_0.5TiO₃, into BaTiO₃-BiMeO₃, resulting in xBi_0.5Na_0.5TiO₃-modified 0.88BaTiO₃-0.12Bi(Zn_2/3Nb_1/3)O₃ ceramics, with x = 0, 0.1, 0.2, 0.3 and 0.4, with superior dielectric properties and eco-friendly impact. Incorporating Bi_0.5Na_0.5TiO₃ with a high saturation polarization and Curie temperature not only significantly enhances P_max of BaTiO₃-Bi(Zn_2/3Nb_1/3)O₃ but also improves Curie temperature of (1-x)[0.88BaTiO₃-0.12Bi(Zn_2/3Nb_1/3)O₃]-xBi_0.5Na_0.5TiO₃ system. Combined with complementary advantages, modified ceramics render a superior energy storage performance (ESP) with a high W_rec of 3.82 J/cm³, efficiency η of 94.4% and prominent temperature tolerance of 25–200 °C at x = 0.3. Moreover, this ceramic exhibit excellent pulse performance, realizing discharge energy storage density W_dis of 2.31 J/cm³ and t_0.9 of 244 ns. Overall, the proposed strategy effectively improved comprehensive properties of BaTiO₃-based ceramics, showing promise in next-generation pulse applications.     

Enhanced microstructure and electrical properties of Mn-modified Bi0.5(Na0.65K0.35)0.5TiO3 ferroelectric ceramics

Bi_0.5(Na_0.65K_0.35)_0.5TiO₃ (BNKT) and Mn-modified Bi_0.5(Na_0.65K_0.35)_0.5(Mn_xTi_1−x)O₃ (BNKMT-10³x), (x=0.0–0.5%) ferroelectric ceramics were synthesized by solid-state reaction method. Optimization of calcination temperature in Mn-doped ceramics was carried out for the removal of secondary phases observed in XRD analysis. BNKMT ceramics sintered at 1090 °C showed enhanced dielectric, piezoelectric and ferroelectric properties in comparison to pure BNKT. The average grain size was found to increase from 0.35 μm in BNKT to 0.52 μm in Bi_0.5(Na_0.65K_0.35)_0.5(Mn_0.0025Ti_0.9975)O₃ (BNKMT-2.5) ceramics. The dielectric permittivity maximum temperature (T_m) was increased to a maximum of 345 °C with Mn-modification. AC conductivity analysis was performed as a function of temperature and frequency to investigate the conduction behavior and determine activation energies. Significant high value of piezoelectric charge coefficient (d₃₃=176 pC/N) was achieved in BNKMT 2.5 ceramics. Improved temperature stability of ferroelectric behavior was observed in the temperature dependent P–E hysteresis loops as a result of Mn-incorporation. The fatigue free nature along with enhanced dielectric and ferroelectric properties make BNKMT-2.5 ceramic a promising candidate for replacing lead based ceramics in device applications.     

Microwave dielectric properties and vibrational spectra of (Na0.5xLa1–0.5x)(Nb1−xMox)O4 ceramics with scheelite structures

In this study, (Na_0.5xLa_1–0.5x)(Nb_1?xMo_x)O₄ (0.0 ≤ x ≤ 1.0) ceramics were synthesized by the traditional solid-state reaction method. All the (Na_0.5xLa_1–0.5x)(Nb_1?xMo_x)O₄ samples could be densified well at 1120–1200 °C. Solid solutions with tetragonal scheelite structures were obtained in the (Na_0.5xLa_1–0.5x)(Nb_1?xMo_x)O₄ ceramics when 0.4 ≤ x < 1.0. A temperature-stable microwave dielectric ceramic with a near-zero temperature coefficient of resonant frequency (TCF) of approximately 2.4 ppm/°C was obtained for the (Na_0.25La_0.75)(Nb_0.5Mo_0.5)O₄ sample, along with a high Q×f value of approximately 45,600 GHz and a low permittivity of approximately 14.5. Introducing the fergusonite phase into the scheelite phase proved effective in obtaining a near-zero TCF.     

Enhanced energy storage performance in Na(1-3x)BixNb0.85Ta0.15O3 relaxor ferroelectric ceramics

High-performance lead-free dielectric containers have excellent energy storage performance such as higher power density and energy density. While being eco-friendly materials, lead-free dielectric materials are more suitable for pulse power systems than other dielectric materials. In this study, Ta⁵⁺and Bi³⁺ ions were introduced into the A site and B site of the NaNbO₃ matrix. The introduction of Bi³⁺ ions induced the formation of a vacancy in the A site, yielding Na_(1-3x)Bi_xNb_0.85Ta_0.15O₃ (NBNT, x = 0.05, 0.08, 0.11, 0.14) ceramics. The recoverable energy density (W_rec) and the energy storage efficiency (η) were highest for the Na_0.67Bi_0.11Nb_0.85Ta_0.15O₃ ceramic, with values of 3.37 J/cm³ and 89% respectively. Batteries employing the Na_0.67Bi_0.11Nb_0.85Ta_0.15O₃ ceramic achieved a current density of 830.4 A/cm², an energy density of 49.8 MW/cm³ and 60.2 ns discharge time. These results show that the Na_0.67Bi_0.11Nb_0.85Ta_0.15O₃ ceramic is an effective energy storage material with broad application prospects.     

Room-temperature ferromagnetism in (K0.5Na0.5)NbO3-xBaNi0.5Nb0.5O3-δ ferroelectric ceramics with narrow bandgap

In this paper, a simple, reproducible and cost-effective solid-state reaction sintering process is developed to fabricate (K_0.5Na_0.5)NbO₃-xBaNi_0.5Nb_0.5O_3-δ (KNN-xBNN) ceramics with a narrow bandgap and room-temperature ferromagnetism. Here, we report a systematic investigation of the influence of the BaNi_0.5Nb_0.5O_3-δ (BNN) concentration on the properties of KNN-xBNN ceramics. All ceramics form orthorhombic perovskite structures with a space group Amm2 and a weak peak at the wavelength of 550 cm^?1 that is characteristic of the pillow shoulder of the orthorhombic phase. KNN-xBNN ceramics with x between 0.02 and 0.08 have a narrow bandgap of about 2.5 eV—much smaller than the 3.5 eV of its parent (K_0.5Na_0.5)NbO₃ (KNN) ceramic—which is attributed to Ni²⁺-oxygen vacancy combinations (Ni²⁺-V_O) raising the valence electron energy level of the KNN ceramic. Furthermore, doping BNN into KNN ceramics can significantly convert the magnetism from diamagnetism to ferromagnetism and the component of x = 0.08 achieves both maximum saturation magnetisation intensity (14 memu/g) and minimum coercive magnetic field (80 Oe). Our findings provide a systematic insight into the bandgap tunability and ferromagnetism induction at room temperature in lead-free perovskite KNN-xBNN ceramics, as well as demonstrate their potential applications in perovskite solar cells and multiferroic devices.     

Enhanced piezoelectric performance in Na0.5Bi4.5Ti4O15-based bismuth-layered ceramics by Nb/Mn doping modification

In this work, Na_0.5Bi_4.5Ti_3.94–xMn_0.06Nb_xO_15+y bismuth-layered ferroelectric ceramics were prepared by a solid-state reaction method. The effect of Nb⁵⁺ content on crystal morphology, electrical properties, and piezoelectric performance were systematically investigated. The results show that the introduction of Nb⁵⁺ into Na_0.5Bi_4.5Ti_3.94–xMn_0.06Nb_xO_15+y ceramics to replace Ti⁴⁺ increases the ratio of b/a lattice parameter, leading to the TiO₆ octahedral distortion and the structural transformation tendency from the orthorhombic to tetragonal phase, which facilitates dipole movements of Na_0.5Bi_4.5Ti_3.94–xMn_0.06Nb_xO_15+y ceramics. Therefore, the ferroelectric properties of Na_0.5Bi_4.5Ti_3.94–xMn_0.06Nb_xO_15+y ceramics are improved, and an enhanced piezoelectric coefficient of 30 pC/N combining great temperature stability with d₃₃ value higher than 25 pC/N in the temperature range of 25°C–450°C has been realized in Na_0.5Bi_4.5Ti_3.94–xMn_0.06Nb_xO_15+y ceramics with x = 0.08 mol. Our work provides a good model for designing lead-free ultrahigh Curie temperature piezoelectric devices that can be practically applied in extremely harsh environments.     

Large electro-strain with excellent fatigue resistance of lead-free (Bi0.5Na0.5)0.94Ba0.06Ti1-x(Y0.5Nb0.5)xO3 perovskite ceramics

A series of lead-free (Bi_0.5Na_0.5)_0.94Ba_0.06Ti_1-x(Y_0.5Nb_0.5)_xO₃ (for 0 ≤ x ≤ 0.03) perovskite ceramics were fabricated using a solid-state reaction technique. The effects of (Y_0.5Nb_0.5)⁴⁺ ions doping on phase structure, piezoelectric properties, AC impedance, and fatigue resistance were systematically studied. Crystal structure as a function of the composition revealed a single perovskite lattice structure with dense micromorphology. The transition temperature of the non-ergodic and ergodic relaxor ferroelectric phase shifted to near ambient temperature with increasing composition, which was related to the destruction of the long-range ordered ferroelectric domains. Hence, the transformation of ferroelectric-to-relaxor phase was easier under applied electric field at room temperature. The ceramic for x = 0.01 composition attained a large unipolar strain of ~ 0.452% with a corresponding normalized strain (d₃₃*) of ~ 603 pm/V under applied 75 kV/cm field. Besides, the excellent fatigue resistance of the sample was obtained after 10⁵ switching cycles under 70 kV/cm. These phenomena demonstrated that (Bi_0.5Na_0.5)_0.94Ba_0.06Ti_1-x(Y_0.5Nb_0.5)_xO₃ ceramics might be suitable for a wide range of electronic equipment applications such as actuators and sensors.     

A simple Bi3+ self-doping strategy constructing pseudo-tetragonal phase boundary to enhance electrical properties in CaBi2Nb2O9 high-temperature piezoceramics

Calcium bismuth niobate (CaBi₂Nb₂O₉, CBN)-based ceramics are promising candidates for high temperature application, the electrical properties of which are commonly enhanced by complex ion substitution or texture processes. Here, we report that high piezoelectricity and high resistivity were achieved in Ca_1-xBi_2+xNb₂O₉ by constructing pseudo-tetragonal boundary through a simple strategy of Bi³⁺ self-doping. At the pseudo-tetragonal boundary, Ca_0.96Bi_2.04Nb₂O₉ ceramics maintain high Curie temperature T_c = 942 °C, and show high piezoelectric coefficient d₃₃ = 15.1 pC/N and high resistivity ρ_dc = 2 × 10⁶ Ω cm (@600 °C). It is proved that the good piezoelectric property mainly originates from the increase of domain density. In addition, Ca_0.96Bi_2.04Nb₂O₉ ceramics reveal good thermal depoling performance, remaining 90% of piezoelectricity after thermal depoling at 900 ℃, which is due to small thermal expansion and structural distortion. Our work provides a promising candidate for high temperature applications and an easy way to improve the performance of Aurivillius-type piezoelectric ceramics.     

Effects of Nb2O5 Doping on the Microwave Dielectric Properties and Microstructures of Bi2Mo2O9 Ceramics

This study investigated the effects of the addition of Nb₂O₅ and sintering temperature on the properties of Bi₂Mo₂O₉ ceramics. The ceramics were sintered in air at temperatures ranging from 620°C to 680°C. The addition of small amounts of Nb₂O₅ as a dopant significantly affected the crystalline phase and the microwave dielectric properties of the Bi₂Mo₂O₉ ceramics. The secondary phase, γ‐Bi₂MoO₆, was observed when Nb₂O₅ was added. However, unlike the Bi₂Mo₂O₉ ceramic without Nb₂O₅ sintered above 645°C, the ceramics with 3 mol% Nb₂O₅ contained no γ‐Bi₂MoO₆ when sintered at 660°C. The Q × f value and τ_f of the Bi₂Mo₂O₉ ceramics were improved by Nb₂O₅ doping. The Bi₂Mo₂O₉ ceramics doped with 2 mol% Nb₂O₅ exhibited the best microwave dielectric properties, with a permittivity of 36.5, a Q × f value (f = resonant frequency, Q = 1/dielectric loss at f) of 14100 GHz and τ_f of +5.5 ppm/°C after sintering at 620°C.     

Room temperature constructing rhombohedral-tetragonal phase boundary in novel (Bi,Na)(Zr,Ti)O3 modified (K,Na)(Nb,Sb)O3 ceramics: Phase structure,defect and piezoelectric performance

Lead-free (1-x)(K_0.5Na_0.5)(Nb_0.96Sb_0.04)O₃-x(Bi_0.5Na_0.5)(Zr_0.8Ti_0.2)O₃ ceramics (abbreviated as (1-x)KNNS-xBNZT, x = 0, 0.01, 0.02, 0.03, 0.035 and 0.04) were synthesized by the solid-state method, and the dependence of phase evolution, microstructure, oxygen vacancy defect and electrical properties on compositions were carefully investigated. All ceramics had a pure perovskite structure and a dense microstructure. The phase transition temperatures (T_R-O and T_O-T) of the ceramics were adjusted by adding BNZT, and the rhombohedral-tetragonal (R-T) phase coexistence boundary was successfully constructed at room temperature when x = 0.03, the excellent piezoelectric performance (d₃₃ ～ 323 pC/N, k_p ～ 0.372) and high Curie temperature (T_C ～ 276 °C) have been achieved at this time. The grain size of the ceramics showed a strong difference on x content, and the maximum relative density value of 95.42% was obtained. The domain structure characterized by PFM confirmed that the ceramics possess small-sized nano-domains and complex domains at x = 0.03, which are the origin of enhanced piezoelectric properties. Moreover, the oxygen vacancy defect that can pin the domain walls was increased with the addition of (Bi_0.5Na_0.5)(Zr_0.8Ti_0.2)O₃. As a result, the doping with BNZT can significantly affect the phase structure and electrical properties of the ceramics, indicating that the (1-x)KNNS-xBNZT ceramics system with a R-T phase boundary is a promising lead-free piezoelectric material.     

Fabrication of transparent electro-optic (K0.5Na0.5)1−xLixNb1−xBixO3 lead-free ceramics

Lead-free transparent electro-optic ceramics (K_0.5Na_0.5)_1?xLi_xNb_1?xBi_xO₃ have been fabricated by hot-press sintering. Owing to the effective suppression of grain growth, the Li and Bi co-modified ceramics generally possess a dense and fine-grained structure. The co-modification also causes the ceramics to transform into a nearly cubic structure with minimal optical anisotropy. A diffuse phase transformation is also induced, causing the ceramics to become more relaxor-like and contain more polar nano-regions. These would reduce the light scattering by the grains, at the grain boundaries and at the domain walls, respectively, and thus making the ceramics become optically transparent. For the ceramic modified with 5 mol% Li⁺ and Bi⁵⁺, the optical transmittance reaches a high value of 60% in the near-IR region. The ceramics also exhibit a strong linear EO response, giving a large effective linear EO coefficient in the range of 120–200 pm/V.     

Microstructure and electrical properties of 3-0 type composite of Na0.5Bi2.5Nb2O9-based bismuth-layered piezoceramics

The microstructure and electrical properties of 3-0 type composite of Na_0.5Bi_2.5Nb₂O₉-based bismuth layered piezoceramics modified by Al₂O₃ addition are investigated. The darker and plate-like grains, locating at the grain boundaries, are confirmed to be pure α-Al₂O₃ by high resolution transmission electron microscope, not a Bi₂AlNbO₇ pyrochlore phase. This 3-0 type Na_0.5Bi_2.5Nb₂O₉-Al₂O₃ composite piezoceramics have a large piezoelectric constant d₃₃ of 15.2pC/N with good temperature stability up to 600 °C, and good ferroelectric properties with a relatively large remnant polarization of ~11.6 μC/cm². These demonstrate that designing a 3-0 type composite structure would be an effective approach to tailor the microstructure and improve the electrical properties of bismuth layered piezoceremics for their potential applications at temperature up to 600 °C.     

(Bi0.5Na0.5)ZrO3 modified KNN-based ceramics: Enhanced electrical properties and temperature insensitivity

To further improve the properties of KNN-based lead-free ceramics, a new ceramic system, (0.98-x)K_0.525Na_0.475Nb_0.965Sb_0.035O₃-0.02 BaZr_0.5Hf_0.5O₃-x(Bi_0.5Na_0.5)ZrO₃(KNNS-BZH-xBNZ) was designed, the relevant properties such as piezoelectricity, strain, and temperature stability were analysed in detail. It was found that the R-T phase boundary can be successfully constructed when x=0.030, and this two-phase coexistence shows relatively good comprehensive properties (d₃₃~410 pC/N, T_C~255 °C, S_uni~0.132%, and d₃₃*~441 pm/V). Meanwhile, its strain property also shows good temperature stability from room temperature to 180 °C (S_uni100°C/S_uniRT~97.5% and S_uni180°C/S_uniRT~83.9%), which is comparatively superior to many KNN-based ceramics and some lead-based ceramics. Therefore, KNNS-BZH-xBNZ ceramics may broaden the practical application of lead-free ceramics.     

Processing and enhanced electrical properties of Sr1-x(K0.5Bi0.5)xBi2Nb2O9 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics, Sr_1−x(K_0.5Bi_0.5)_xBi₂Nb₂O₉ (SKBN-x, x=0, 0.2, 0.5, 1.0), were synthesized by a conventional solid-state reaction. Structural and electrical properties of SKBN-x ceramics were investigated. X-ray diffraction analysis suggested that the substitution led to the formation of a layered perovskite structure. Plate-like morphologies for the grains were clearly observed in all the samples, which are characteristic for layer-structure Aurivillius compounds. The Curie temperature (T_c) is found to shift to higher temperature from 445 °C to 509 °C with increasing (K, Bi) content. Excellent remanent polarization (2P_r∼15 μC/cm²) were obtained for SKBN-0.2 ceramic. High piezoelectric coefficient of d₃₃∼21  pC/N were obtained for the samples at x=0.5. Additionally, thermal annealing studies indicated that the piezoelectric coefficient (d₃₃) of SKBN-0.5 was unchanged even if annealing temperature increased to be 450 °C, demonstrating the ceramics are the promising candidates for high-temperature applications.     

Phase transition induced morphotropic phase boundary behavior and the electric properties in strontium modulated Bi4.5Na0.5Ti4O15 lead-free ceramics

Lead-free (Bi_0.5Na_0.5)_1-xSr_xBi₄Ti₄O₁₅ ceramics (x = 0–0.9) are fabricated by solid state reaction process. XRD analysis shows the symmetry divergence from tetragonal to orthorhombic phase accompanied by morphotropic phase boundary with increasing strontium content. Raman spectra confirm the incorporation of strontium into (Bi_2.5Na_0.5Ti₄O₁₃)^2- layers. SEM graphs exhibit the typical plate-like morphology with regular variation of grain size and crystallization as strontium increases. Multistage ferroelectric transition is observed with x = 0.2–0.4. Piezoelectric performance measurements present the well thermal stability at x = 0.4. The dielectric properties display a shifting of Curie temperature towards low temperature with increasing strontium ions. It can be due to the crystal lattice distortion by larger radius of strontium and the increasing tolerance factor. ac conductivity and impedance measurements suggest that electron hopping mainly contributes to the low temperature region. Ionization conductivity by oxygen vacancy migration including first-ionization and double-ionization plays the dominating role in the middle and high temperature region. The controllable properties indicate the potential applications for electric devices of (Bi_0.5Na_0.5)_1-xSr_xBi₄Ti₄O₁₅ ceramic.     

Structure,dielectric and ferroelectric properties of 0.92Na0.5Bi0.5TiO3–0.06BaTiO3–0.02K0.5Na0.5NbO3 lead-free ceramics: Effect of Co2O3 additive

0.92Na_0.5Bi_0.5TiO₃–0.06BaTiO₃–0.02K_0.5Na_0.5NbO₃+x wt% Co₂O₃ (NBKT–xCo, x=0, 0.2, 0.4, 0.6, 0.8) lead-free ferroelectric ceramics were prepared via a conventional solid state reaction method. Effects of Co₂O₃ additive on crystallite structure, microstructure, dielectric and ferroelectric properties of the NBKT–xCo ceramics were studied. X-ray diffraction results showed that the rhombohedral–tetragonal morphotropic phase boundary existed in all the ceramics, with relative amount of tetragonal phase varying with the content of Co₂O₃. Average grain size, maximum value of dielectric constant, Curie temperature and ferroelectric properties of the ceramics were close related to the content of Co₂O₃. The dielectric anomaly caused by the phase transition between the ferroelectric phase and the so-called “intermediate phase” was observed in the ceramics with x≤0.2, while it disappeared with further increasing x. All the ceramics showed a diffuse phase transition between the “intermediate phase” and the paraelectric phase. The change in the ferroelectric properties with changing the content of Co₂O₃ was discussed by considering the competitive effects among grain size, relative amount of the tetragonal phase and oxygen vacancies.     

Doping level effects in Nb self-doped Bi3TiNbO9 high-temperature piezoceramics with improved electrical properties

Nb self-doped Bi₃Ti_1-xNb_1+xO₉ (x = 0, 0.02, 0.04, 0.06, 0.08, and 0.1) high-temperature piezoelectric ceramics were fabricated through the conventional solid-state sintering method. The effects of different Nb self-doping levels on the microstructure, piezoelectric activities, and electrical conduction behaviors of these Nb self-doped Bi₃Ti_1-xNb_1+xO₉ ceramics were studied in detail. Large doping level effects on piezoelectric activity and resistivity were confirmed, which might be ascribed to the evolution of the crystal structure and the variations of the oxygen vacancy concentration and the grain anisotropy induced by Nb doping. An optimized piezoelectric coefficient (d₃₃) of 11.6 pC/N was achieved at x = 0.04 with a Curie temperature of 906°C. Additionally, an improved DC resistivity of 6.18 × 10⁵ Ω·cm at 600°C was acquired in this ceramic. Furthermore, the ceramic exhibited excellent thermal stability with the d₃₃ value maintaining 95% of its initial value after being annealed at 850°C for 2 hours. These results showed that Nb self-doped Bi₃Ti_1-xNb_1+xO₉ ceramics might have great potentials for high-temperature piezoelectric applications.     

Microwave dielectric properties and microstructures of Nb2O5-Zn0.95Mg0.05TiO3 + 0.25TiO2 ceramics with Bi2O3 addition

The effects of Bi₂O₃ addition on the microwave dielectric properties and the microstructures of Nb₂O₅-Zn_0.95Mg_0.05TiO₃ + 0.25TiO₂ (Nb-ZMT′) ceramics prepared by conventional solid-state routes have been investigated. The results of X-ray diffraction (XRD) indicate the presence of four crystalline phases, ZnTiO₃, TiO₂, Bi₂Ti₂O₇, and (Bi_1.5Zn_0.5)(Ti_1.5Nb_0.5)O₇ in the sintered ceramics, depending upon the amount of Bi₂O₃ addition. In addition, in order to confirm the existence of (Bi_1.5Zn_0.5)(Ti_1.5Nb_0.5)O₇ phase in the samples, the microstructure of Nb-ZMT′ ceramic with 5 wt.% B₂O₃ addition was analyzed by using a transmission electron micrograph. The dielectric constant of Nb-ZMT′ samples was higher than ZMT′ ceramics. The Nb-ZMT′ ceramic with 5 wt.% Bi₂O₃ addition exhibits the optimum dielectric properties: Q × f = 12,000 GHz, ?_r = 30, and τ_f = ?12 ppm/°C. Unlike the ZMT′ ceramic sintered at 900 °C, the Nb-ZMT′ ceramics show higher Q value and dielectric constant. Moreover, there is no Zn₂TiO₄ existence at 960 °C sintering. To understand the co-sinterability between silver electrodes and the Nb-ZMT′ dielectrics, the multilayer samples are prepared by multilayer thick film processing. The co-sinterability (900 °C) between silver electrode and Nb-ZMT′ dielectric are well compatible, because there are no cracks, delaminations, and deformations in multilayer specimens.