Si3N4／Si3N4陶瓷连接的研究进展

本文综述了Ｓｉ３Ｎ４／Ｓｉ３Ｎ４陶瓷连接的研究现状，论述不同连接工艺对接头强度的影响。     

Si3N4／Si3N4陶瓷连接的研究进展

连接技术是Ｓｉ３Ｎ４陶瓷实用过程中必须解决的难题之一。本文综述了Ｓｉ３Ｎ４／Ｓｉ３Ｎ４陶瓷连接的研究现状以及不同连接工艺对连接强度的影响。     

β-Si3N4及添加β-Si3N4的α-Si3N4的气氛加压烧结

介绍了β－Ｓｉ３Ｎ４及添加β－Ｓｉ３Ｎ４的α－Ｓｉ３Ｎ４的气氛加压烧结,β－Ｓｉ３Ｎ４在ＧＰＳ中具有低于α－Ｓｉ３Ｎ４的烧结活性而且陶瓷显微结构更容易调节,由ＧＰＳβ－Ｓｉ３Ｎ４制备的陶瓷材料晶粒比较均匀,具有较高的力学性能,尤其是高的韦泊模数,添加于α－Ｓｉ３Ｎ４中的β－Ｓｉ３Ｎ４对陶瓷材料显微结构具有明显的调控作用。     

Si3N4/Si3N4扩散连接的力学性能研究

采用热压法进行氮化硅陶瓷材料的扩散连接.结果表明:在1520℃,15MPa,60min条件下,氮化硅连接体的最高强度为448.6MPa,超过母材强度;平均连接强度为401.5MPa,为母材强度的96%.     

Synthesis of β-Si3N4 particles from α-Si3N4 particles

This report describes an investigation of the synthesis of β-Si₃N₄ particles from α-Si₃N₄ particles. The β fraction of Si₃N₄ particles was found to depend on temperature, heating time, and the type of crucibles in which the Si₃N₄ particles were heated. When Si₃N₄ particles were heated in a crucible made of carbon, most α-Si₃N₄ particles converted to β-Si₃N₄ after heating at 2000°C for 90 min in an atmosphere of N₂ of 9 kgf/cm². The morphology of the resulting β-Si₃N₄ particles appeared as a whisker shape. When Si₃N₄ particles were heated in a crucible made of boron nitride, most α-Si₃N₄ particles converted to β-Si₃N₄ after heating at 2000°C for 480min in an atmosphere of N₂ of 9kgf/cm². The resulting morphology was equiaxed. It is suspected that the transformation occurs via the gas phase and is affected by the partial pressure of oxygen in the atmosphere.     

α-Si3N4与γ-Si3N4、α-Si3N4混合粉体超高压烧结的比较研究

以Y2O3-Al2O3-La2O3体系作烧结助剂,在5．4～5．7GPa、1620-1770K的高温高压条件下进行了α-Si3N4与γ-Si3N4、α-Si3N4粉体的烧结研究,并探讨了烧结温度及压力对烧结体性能的影响。实验结果表明：α-Si3N4、γ-Si3N4完全相变为β-Si3N4;在相同的烧结条件下,α-SigN4比γ-Si3N4、α-Si3N4混合粉体烧结试样的相对密度、维氏硬度高。α-Si3N4与γ-Si3N4、α-Si3N4混合粉体烧结试样的最高相对密度与维氏硬度分别为98．78％、21．87GPa和98．71％、21．76GPa。烧结体由相互交错的长柱状β—Si3N4晶粒组成．显微结构均匀。     

Si3N4含量对Si3N4-SiC材料腐蚀性能的影响

利用Si3N4—SiC材料在冰晶石静态融盐电解质中的腐蚀实验研究材料的腐蚀性能,对腐蚀增重率进行记录分析,Si3N4的含量是影响材料腐蚀性能的重要因素,根据实验测定得出Si3N4的含量越高,Si3N4-SiC材料腐蚀程度越严重。     

Ar,Ti离子注入Si3N4表面改性的研究

研究了Ｓｉ３Ｎ４陶瓷及其表面蒸镀Ａｌ膜试样的离子注入效果，结果表明，Ｔｉ离子的注入与Ａｒ离子的注入都可提高Ａｌ膜与陶瓷基体的结合力，并在一定的注入的剂量范围内随着注入剂量的增加，Ａｌ膜与陶瓷基体的结合力也有增加的趋势。Ｔｉ离子的注入使表面硬度增加，表面硬度随Ｔｉ离子注入量的增加而提高。Ａｒ离子的注入（１０＾１５Ｉｏｎｓ．ｃｍ＾－２）也使表面硬度增加，但继续增加Ａｒ离子的注入量，表面硬度却下降。根据     

Preparation,Properties and Growth Mechanism of Low-Cost Porous Si3N4 Ceramics with High Levels of β-Si3N4 Powders

Silicon - Nowadays, porous Si3N4 ceramics are fabricated by high purity α-Si3N4 powders, resulting in a higher cost of production. To reduce cost and save energy, in this research, high levels...     

g-C3N4的改性策略以及g-C3N4/Ti3C2异质结研究进展

石墨相氮化碳（g-C₃N₄）禁带宽度约为2.7 eV，具有可见光响应能力。由于其良好的热和化学稳定性，且形貌和化学结构可调，在光催化领域应用广泛。但由于其带隙宽，对可见光响应范围窄，且光生载流子的复合率高，导致其光催化效率低，可通过改性来改善。本文综述了对g-C₃N₄形貌调控、掺杂和构建异质结等改性策略，以及g-C₃N₄/Ti₃C₂异质结的作用机理、制备方法和在光催化析氢、有机物降解及合成等领域的应用。     

β-Si3N4晶种对Si3N4陶瓷力学性能和显微结构的影响

采用无压烧结工艺制备了长柱状β-Si3N4品种.研究了晶种尺寸对Si3N4陶瓷力学性能和显微结构的影响.结果表明:在1750℃通过控制保温时间(1h、1.5h和2h)可获得不同尺寸的长柱状β-Si3N4晶种.Si3N4陶瓷加入晶种后,其相对密度和抗弯强度虽略有降低,但断裂韧性得到大幅提高.平均长度为4.51μm,长径比为5.71的品种对Si3N4陶瓷的增韧效果最佳;且随着其添加量的增加,Si3N4陶瓷的断裂韧性先升高再降低,当掺量为2wt％时断裂韧性达到最高(提高了20％以上).显微结构分析表明,Si3N4陶瓷断裂韧性的提高,与因晶种加入而导致的Si3N4晶粒长径比和大长柱状晶粒含量的增加有关.     

Extraction of Actinide(III,IV, V,VI) Ions and TcO4 − by N,N,N′,N′‐Tetraisobutyl‐3‐Oxa‐Glutaramide

Abstract

The extraction behavior of U(VI), Np(V), Pu(IV), Am(III), and TcO₄ ^? with N,N,N′,N′‐tetraisobutyl‐3‐oxa‐glutaramide (TiBOGA) were investigated. An organic phase of 0.2 mol/L TiBOGA in 40/60% (V/V) 1‐octanol/kerosene showed good extractability for actinides (III, IV, V VI) and TcO₄ ^? from aqueous solutions of HNO₃ (0.1 to 4 mol/L). At 25°C, the distribution ratio of the actinide ions (D _An) generally increased as the concentration of HNO₃ in the aqueous phase was increased from 0.1 to 4 mol/L, while the D _Tc at first increased, then decreased, with a maximum of 3.0 at 2 mol/L HNO₃. Based on the slope analysis of the dependence of D _M (M=An or Tc) on the concentrations of reagents, the formula of extracted complexes were assumed to be UO₂L₂(NO₃)₂, NpO₂L₂(NO₃), PuL(NO₃)₄, AmL₃(NO₃)₃, and HL₂(TcO₄) where L=TiBOGA. The enthalpy and entropy of the corresponding extraction reactions, Δ_r H and Δ_r S, were calculated from the dependence of D on temperature in the range of 15–55°C. For U(VI), Np(V), Am(III) and TcO₄ ^?, the extraction reactions are enthalpy driven and disfavored by entropy (Δ_r H<0 and Δ_r S<0). In contrast, the extraction reaction of Pu(IV) is entropy driven and disfavored by enthalpy (Δ_r H>0 and Δ_r S>0). A test run with 0.2 mol/L TiBOGA in 40/60% 1‐octanol/kerosene was performed to separate actinides and TcO₄ ^? from a simulated acidic high‐level liquid waste (HLLW), using tracer amounts of ²³⁸U(VI), ²³⁷Np(V), ²³⁹Pu(IV), ²⁴¹Am(III) and ⁹⁹TcO₄ ^?. The distribution ratios of U(VI), Np(V), Pu(IV), Am(III) and TcO₄ ^? were 12.4, 3.9, 87, >1000 and 1.5, respectively, confirming that TiBOGA is a promising extractant for the separation of all actinides and TcO₄ ^? from acidic HLLW. It is noteworthy that the extractability of TiBOGA for Np(V) from acidic HLLW (D _Np(V)=3.9) is much higher than that of many other extractants that have been studied for the separation of actinides from HLLW.     

木耳状g-C3N4的合成

以三聚氰胺、三聚氯氰为原料,550℃热聚合法制备了g-C_3N_4(FCN)。~(13)CNMR、XRD证明该g-C_3N_4的结构单元是3-s-三嗪环,电镜照片显示FCN形貌为木耳状,边缘较厚。原料三聚氯氰、三聚氰胺分别是4 g和2 g时,N_2吸附-脱附测定FCN1的比表面积为156.25 m~2/g,孔径60 nm。UV-Vis漫反射测试FCN1的吸收边缘为482 nm,对应禁带宽度2.57 eV,PL光谱显示FCN1光致发光强度最弱。可见光照射下,30 mg FCN1加入30 mL(30 mg/L)的罗丹明B(RhB)溶液中,50 min后RhB的光降解率是99.62%,光催化剂循环实验表明该木耳状g-C_3N_4具有良好的稳定性。     

放电等离子烧结Si3N4陶瓷

本文用放电等离子烧结法制备Si3N4陶瓷,通过排水法测定密度,X射线衍射法测定物相变化,透射电镜进行微观形貌的观察。发现在烧结过程中,当高于1450℃时MgO—CeO2与氮化硅粉末表面的SiO2反应形成硅酸盐液相,促进烧结致密化,冷却后形成玻璃相留在品界,氮化硅的致密化在1500℃接近完成,但高于1550℃时,出现MgO自析晶,微观形貌为相互交织的等轴状的α—Si3N4和柱状的β—Si3N4晶粒。     

Si3N4陶瓷常压烧结研究进展

论述了Si3N4陶瓷常压烧结过程中助烧剂的选择，烧结机理和高温性能改善方面的研究进展。     

两步气压烧结Si3N4陶瓷

通过先使Si3N4陶瓷材料在1750℃、1MPa氮气压力下烧结,再在1950℃、7MPa氮气压力下烧结,从而获得高性能的Si3N4陶瓷材料,其抗弯强度为725MPa,断裂韧性为7.8MPa·m1/2.