Phase Diagram and Properties of High TC/TR−T Pb(In1/2Nb1/2) O3–Pb(Zn1/3Nb2/3)O3–PbTiO3 Ferroelectric Ceramics

A ternary ferroelectric ceramic system, (1?x?y)Pb(In_1/2Nb_1/2)O₃–xPb(Zn_1/3Nb_2/3)O₃–yPbTiO₃ (PIN–PZN–PT, x = 0.21, 0.27, 0.36, 0.42), was prepared using a two‐step precursor method. The phase structure, dielectric, piezoelectric, and ferroelectric properties of the ternary ceramics were systematically investigated. A morphotropic phase boundary (MPB) was identified by X‐ray diffraction. The optimum piezoelectric and electromechanical properties were achieved for a composition close to MPB (0.5PIN–0.21PZN–0.29PT), where the piezoelectric coefficient d₃₃, planar electromechanical coupling factor k_p, and remnant polarization P_r are 660 pC/N,72%, and 45 μC/cm², respectively. The Curie temperature T_C and rhombohedral to tetragonal phase transition temperature T_R?T were also derived by temperature dependence of dielectric measurements. The strongly “bended” MPB in the PIN–PT system was found to be “flattened” after addition of PZN in the PIN–PT–PZN system. The results demonstrate a possibility of growing ferroelectric single crystals with high electromechanical properties and expanded range of application temperature.     

Large Piezoelectric Response and Polarization in Relaxor Ferroelectric PbTiO3–Bi(Ni1/2Zr1/2)O3

New binary system (1?x) PbTiO₃?xBi(Ni_1/2Zr_1/2)O₃ (PT–100x BNZ) with x ≤ 0.45 were synthesized via solid‐state reaction route. A morphotropic phase boundary (MPB) was identified around x = 0.40 by X‐ray diffraction (XRD) method. The ceramics with MPB composition exhibit enhanced ferroelectric properties. A large piezoelectric coefficient (d₃₃) up to 400 pC/N was obtained for the PT–40BNZ, which is comparable with the PbTiO₃–BiScO₃ (PT–BS, 450 pC/N).The frequency dependence of dielectric permittivity of PT–40BNZ shows characteristic of a strong relaxor feature and a transition temperature around 290°C (1 MHz). Temperature effect on the unipolar strain was also investigated. The present system with high d₃₃ is a competitive piezoelectric material, as no expensive oxide is used here compared with the PT–BS.     

Structure and properties of Bi(Zn½Ti½)O3-modified Pb(Zr,Ti)O3 piezo-/ferroelectric ceramics around the ternary morphotropic phase boundary

To develop high-performance piezo-/ferroelectric materials, Bi(Zn_½Ti_½)O₃–PbZrO₃–PbTiO₃ (BZT–PZ–PT) ternary solid solution with compositions around the morphotropic phase boundary (MPB) is synthesized by solid-state reaction. The crystal structure and electric properties are investigated systematically by X-ray powder diffraction (XRD), dielectric spectroscopy, and ferroelectric and piezoelectric measurements. On the basis of the results of the XRD, dielectric and ferroelectric measurements, the pseudo-binary phase diagram of the yBi(Zn_½Ti_½)O₃–(1 − y)[(1 − x)PbZrO₃–xPbTiO₃] system has been constructed for three series, namely, y = 0.05, 0.10, and 0.15. It is found that the introduction of BZT into the PZT system makes the paraelectric to ferroelectric phase transition more diffuse, brings the MPB to a lower PT content, and enlarges the MPB region. The best properties with an improved dielectric constant ε' = 1248, and a large remnant polarization P_r = 33 μC/cm², as well as a relatively high T_C = 286°C, and a high coercive field E_c = 23 kV/cm was achieved in the y = 0.15 series with MPB composition x = 0.425, making it a promising material for high-power piezoelectric applications.     

Lead-reduced Bi(Ni2/3Ta1/3)O3-PbTiO3 perovskite ceramics with high Curie temperature and performance

With increasing demand of high-temperature piezoelectric devices and growing concern over environment protection, a feasible reduction in lead from lead-based high Curie temperature piezoelectric materials are desperately needed. Herein, a new system of lead-reduced Bi(Ni_2/3Ta_1/3)O₃-PbTiO₃ (BNT-PT) ferroelectric ceramics is fabricated by a conventional solid-state sintering process. The phase transition behaviors as a function of composition and temperature, electrical properties, as well as the domain configurations from a microscopic level have been investigated in detail. The results indicate that crystal structures, phase transition behaviors, and electric properties of BNT-PT ceramics can be affected significantly by the content of BNT counterpart. Dielectric measurements show that xBNT-(1−x)PT ceramics transfer from the normal ferroelectrics to the relaxor ferroelectrics at compositions of x = 0.3-0.35. The BNT-PT ceramics exhibit high Curie temperature T_C ranging from 474 to 185°C with the variation in BNT content. The relative dielectric tunability n_r also rises from only 0.65% for 0.10BNT-0.90PT to 50.23% for 0.40BNT-0.60PT with increasing BNT content. The tetragonal-rich composition 0.30BNT-0.70PT ceramic possesses the maximum remnant polarization of P_r ~ 34.9 μC/cm². Meanwhile, a highest piezoelectric coefficient of d₃₃ ~ 271 pC/N and a high field piezoelectric strain coefficient of  ~ 560 pm/V are achieved at morphotropic phase boundary (MPB) composition of 0.38BNT-0.62PT. The maximum value of strain ~0.31% is obtained in the 0.36BNT-0.64PT ceramic. The largest electromechanical coupling coefficient k_p is 44.5% for 0.37BNT-0.63PT ceramic. These findings demonstrate that BNT-PT ceramics are a system of high-performance Pb-reduced ferro/piezoelectrics, which will be very promising materials for piezoelectric devices. This study offers an approach to developing and exploring new lead-reduced ferroelectric ceramics with high performances.     

Enhanced piezoelectric strain of BiFeO3–Ba(Zr0.02Ti0.98)O3 lead-free ceramics near the phase boundary

The xBiFeO₃-(1-x)Ba(Zr_0.02Ti_0.98)O₃ + 1.0 mol% MnO₂ (xBF-BZT) lead-free piezoelectric ceramics were prepared by conventional solid-state reaction method. The structure, dielectric, and piezoelectric properties were studied. X-ray diffraction (XRD) analysis showed that xBF-BZT ceramics exhibited pure perovskite structure with the coexistence of tetragonal and rhombohedral phases (0.66 ≤ x ≤ 0.74). The Curie temperature T_c, the dielectric constant ε_r (1 kHz), dielectric loss tanδ (1 kHz), piezoelectric constant d₃₃, coercive field E_c (80 kV/cm), and remnant polarization P_r (80 kV/cm) of 0.7BF-0.3BZT-Mn ceramics were 491°C, 633, 0.044, 165 pC/N, 35.6 kV/cm, and 22.6 μC/cm², respectively. The unipolar strain of 0.7BF-0.3BZT reached up to 0.20% under the electric field of 60 kV/cm, which is larger than that (0.15%) of BiFeO₃–BaTiO₃ ceramics. These results indicated that the xBF-BZT ceramics were promising candidates for high-temperature piezoelectric materials.     

Investigation of dielectric and piezoelectric properties in aliovalent Eu3+-modified Pb(Mg1/3Nb2/3)O3-PbTiO3 ceramics

Rare earth (Eu³⁺)-modified Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PMN-PT) polycrystalline ferroelectric ceramics were fabricated by high-temperature solid-state sintering, the phase structure, dielectric and piezoelectric properties were investigated. Eu³⁺ addition was found to significantly improve dielectric and piezoelectric properties of PMN-PT, where the optimized properties were achieved for the composition of 2.5 mol%Eu: 0.72PMN-0.28PT, with the piezoelectric d₃₃ = 1420 pC/N, dielectric ε_r = 12 200 and electromechanical k₃₃ = 0.78, respectively. All these results indicate that the Eu³⁺-doped PMN-PT ceramics are promising candidates for high-performance room-temperature piezoelectric devices.     

Preparation and characterization of Pb(Lu1/2Nb1/2)O3–Pb(In1/2Nb1/2)O3–PbTiO3 ternary ferroelectric ceramics with high phase transition temperatures

To explore new relaxor‐PbTiO₃ systems for high‐power and high‐temperature electromechanical applications, a ternary ferroelectric ceramic system of Pb(Lu_1/2Nb_1/2)O₃–Pb(In_1/2Nb_1/2)O₃–PbTiO₃ (PLN–PIN–PT) have been investigated. The phase structure, dielectric, piezoelectric, and ferroelectric properties of the as‐prepared PLN–PIN–PT ceramics near the morphotropic phase boundary (MPB) were characterized. A high rhombohedral‐tetragonal phase transition temperature T_R‐T of 165°C and a high Curie temperature T_C of 345°C, together with a good piezoelectric coefficient d₃₃ of 420 pC/N, were obtained in 0.38PLN–0.20PIN–0.42PT ceramics. Furthermore, for (0.8?x)PLN–0.2PIN–xPT ceramics, the temperature‐dependent piezoelectric coefficients, coercive fields and electric‐field‐induced strains were further studied. At 175°C, their coercive fields were found to be above 9.5 kV/cm, which is higher than that of PMN–PT and soft P5H ceramics at room temperature, indicating PLN–PIN–PT ceramics to be one of the promising candidates in piezoelectric applications under high‐driven fields. The results presented here could benefit the development of relaxor‐PbTiO₃ with enhanced phase transition temperatures and coercive fields.     

High electric field-induced strain properties in La-doped Pb(In1/2Nb1/2)O3–PbZrO3–PbTiO3 relaxor ferroelectric ceramics

Piezoelectric ceramics with high strain response and low hysteresis are highly in demand for high-performance actuator applications. Unfortunately, the trade-off relationship between large field-induced strain and low hysteresis in piezoelectric ceramics is a key challenge for designing high-performance piezoelectric actuators. Herein, ymol%La-doped 0.10 Pb(In_1/2Nb_1/2)O₃-xPbZrO₃-(0.90–x)PbTiO₃ [0.10PIN-xPZ-(0.90-x)PT: ymol%La] ternary relaxor ferroelectric ceramics were prepared by conventional solid-state reaction technique. Pb(In_1/2Nb_1/2)O₃ (PIN) as a relaxor end member was introduced into (Pb,La) (Zr,Ti)O₃ (PLZT) system to improve relaxor characteristics and strain properties. A giant strain of 0.23% was obtained in 0.10PIN-0.59PZ-0.31 PT: 8mol%La ceramic at the electric field of 20 kV/cm, with a high piezoelectric d₃₃* of 1150 pm/V and low hysteresis H_y of 6.4%, exhibiting a potential application in high-performance piezoelectric actuators. Furthermore, the effects of La ion doping and components on the ferroelectric, dielectric and electric field-induced strain properties were investigated, and provides a new way for improve the strain properties of piezoelectric materials.     

Temperature and Frequency Dependence of Electric Field‐Induced Phase Transitions in PMN–0.32PT

Single crystal (1 ? x)Pb(Mg_1/3 Nb_2/3)O₃–xPbTiO₃ [PMN–xPT] (x = 0.32) is a relaxor‐ferroelectric material known to exhibit ‘giant’ piezoelectric behavior, with achievable strains in excess of 1% for samples of certain particular crystallographic orientations and chemical compositions close to the morphotropic phase boundary. In this study, we investigate the electric field‐induced structural phase transitions in single crystal PMN–0.32PT with time‐of‐flight neutron diffraction and macroscopic electrical polarization measurements, and show that both the frequency of the applied ac field and the temperature of the sample are critical factors in determining these phase transition fields.     

Phase‐Composition‐Dependent Piezoelectric and Electromechanical Strain Properties in (Bi1/2Na1/2)TiO3–Ba(Ni1/2Nb1/2)O3 Lead‐Free Ceramics

New lead‐free perovskite solid solution ceramics of (1 ? x)(Bi_1/2Na_1/2)TiO₃–xBa(Ni_1/2Nb_1/2)O₃[(1?x)BNT–xBNN,x = 0.02–0.06) were prepared and their dielectric, ferroelectric, piezoelectric, and electromechanical properties were investigated as a function of the BNN content. The X‐ray diffraction results indicated that the addition of BNN has induced a morphotropic phase transformation from rhombohedral to pseudocubic symmetry approximately at x = 0.045, accompanying an evolution of dielectric relaxor behavior as characterized by enhanced dielectric diffuseness and frequency dispersion. In the proximity of the ferroelectric rhombohedral and pseudocubic phase coexistence zone, the x = 0.045 ceramics exhibited optimal piezoelectric and electromechanical coupling properties of d₃₃~121 pC/N and k_p~0.27 owing to decreased energy barriers for polarization switching. However, further addition of BNN could cause a decrease in freezing temperatures of polar nanoregions till the coexistence of nonergodic and ergodic relaxor phases occurred near room temperature, especially for the x = 0.05 sample which has negligible negative strains and thus show the maximum electrostrain of 0.3% under an external electric field of 7 kV/mm, but almost vanished piezoelectric properties. This was attributed to the fact that the induced long‐range ferroelectric order could reversibly switch back to its original ergodic state upon removal of external electric fields.     

Structural and electrical properties of 0.56Pb(Ni1/3Nb2/3)O3-0.10Pb(Zn1/3Nb2/3)O3-0.34PbTiO3 ceramics prepared by different ceramic processings

The ternary system of 0.56Pb(Ni_1/3Nb_2/3)O₃-0.10Pb(Zn_1/3Nb_2/3)O₃-0.34PbTiO₃ (0.56PNN-0.10PZN-0.34PT) ceramics were prepared by conventional solid-state reaction method via straight mixed oxide method, columbite precursor method and B-site oxide mixing route. X-ray diffraction (XRD) measurement demonstrated that both the tetragonal and rhombohedral phases coexist in the B-site oxide mixing route prepared ceramics accompanied by the largest content of perovskite phase of 95.18%. The 0.56PNN-0.10PZN-0.34PT ceramics prepared by the straight mixed oxide method and the B-site oxide mixing route exhibit rather homogeneous microstructure. As a comparison, in the columbite precursor method prepared ceramics nebulous granules and octahedral or other polyhedral morphology grains are observed. All the sintered ceramics exhibit diffused ferroelectric phase transition where the dielectric response peaks are broad, diffused and strongly frequency dependent. However, the temperature of dielectric maximum (T_m) increases greatly from 398.0 K of the 0.56PNN-0.10PZN-0.34PT ceramics prepared by the B-site oxide mixing route to 423.3 K of the ones prepared by the straight mixed oxide method. Saturated and symmetric P-E hysteresis loops are observed in all the sintered ceramics, where the B-site oxide mixing route prepared ceramics exhibit large value of remanent polarization (P_r) of 17.13 μC/cm² and the least value of coercive field (E_c) of 11.99 kV/cm. Piezoelectric constant (d₃₃) exhibits the largest value of 449 pC/N for the ceramics prepared by the B-site oxide mixing route. Such results are related to the phase composition, density and porosity of the ceramics.     

High recoverable energy storage density and large energy efficiency simultaneously achieved in BaTiO3–Bi(Zn1/2Zr1/2)O3 relaxor ferroelectrics

Relaxor ferroelectrics have attracted much attention as electric energy storage materials for intermittent energy storage because of their high saturated polarization, near-zero remnant polarizations, and considerable dielectric breakdown strength (BDS). Despite the numerous efforts, the dielectric energy storage performance of relaxor ferroelectric ceramics is incomplete or unsatisfactory. The enhancement of recoverable energy storage density W_rec usually accompanies with the sacrifice of discharge-to-charge energy efficiency η; therefore, it is an important issue to achieve high recoverable W_rec and large efficiency η simultaneously. In this work, the (1-x)BaTiO₃-xBi(Zn_1/2Zr_1/2)O₃ (abbreviated as BT-100xBZZ, 0 ≤ x ≤ 0.20) ferroelectric ceramics were prepared using the conventional solid-state reaction method. The phase structure, microstructural morphology, dielectric and ferroelectric properties, relaxation behaviors, and energy storage properties of BT-BZZ ceramics were investigated in detail. X-ray powder diffraction, dielectric spectra, and ferroelectric properties confirm the transformation of tetragonal phase for normal ferroelectrics (BT) to pseudo-cubic phase for relaxor ferroelectrics (BT-8BZZ). A high recoverable energy storage density W_rec of 2.47 J/cm³ and a large energy efficiency η of 94.4% are simultaneously achieved in the composition of BT-12BZZ, which presents typical weakly coupled relaxor ferroelectric characteristics, with an activation energy E_a of 0.21 eV and a freezing temperature T_f of 139.7 K. Such excellent energy storage performance suggests that relaxor ferroelectric BT-12BZZ ceramics are promising dielectric energy storage materials for high-power pulsed capacitors.     

Transition in temperature scaling behaviors and super temperature stable polarization in BiScO3–PbZrO3–PbTiO3 system

Temperature scaling of dynamic ferroelectric hysteresis for the morphotropic phase boundary (MPB) compositions in xBiScO₃–(1-x-y)PbZrO₃–yPbTiO₃ (xBS–(1-x-y)PZ–yPT, 0.018 ≤ x ≤ 0.264) ternary system was systematically investigated. The power-law relation was obtained for remanent polarization P_r and temperature T, that is, P_r ∝ T^β. It is interesting to find that the power-law exponent β could be modulated by BiScO₃ content x. With the increase of x from 0.018 to 0.264, β varies from −1.09398 to 2.44147. Transition of β from negative to positive produces in the vicinity of 0.054BS–0.476PZ–0.470PT ceramic. At this composition, the magnitude of β is very close to zero with value of only −0.01567, implying an almost temperature-independent polarization characteristic of the ceramic. Comparing with the conventional PZT-based piezoelectric ceramics that usually with negative exponent β, when x > 0.054, the xBS–(1-x-y)PZ–yPT ceramics show positive β value, so that the ferroelectric polarization is enhanced with increasing temperature. Such a positive temperature dependence of ferro-/piezoelectric property makes the ternary system a promising candidate for high-temperature applications.     

Pb(In1/2Nb1/2)O3-PbZrO3-PbTiO3 ternary ceramics with temperature-insensitive and superior piezoelectric property

The development of ferroelectric ceramics with both large piezoelectric responses and broad service temperature range is still a key challenge for practical applications due to the so-called d₃₃-T_C trade-off. Here we report the strategy to utilize the synergistic contribution of morphotropic phase boundary and enhanced local structural heterogeneity, in which an excellent piezoelectric coefficient d₃₃ of 680 pC/N and a high Curie temperature of 330 ℃ are simultaneously achieved in Sm modified 0.25PIN-0.325PZ-0.425PT ceramics. The underlying mechanism responsible for the high dielectric and piezoelectric properties is studied based on cryogenic dielectric measurement and Rayleigh analysis. Of particular interest is that, a high field-induced strain of 0.19% is achieved in 0.25PIN-0.32PZ-0.43PT at electric field of 20 kV/cm, corresponding to a piezoelectric d₃₃ * of 945 pm/V, showing an excellent temperature stability with minimal variation of 7% up to 310 °C. This work demonstrates the introduction of high temperature end members and rare earth doping are conducive to ferroelectric solid solutions with desired broad usage temperature range and superior piezoelectric properties, which will greatly benefit high temperature actuator applications.     

Normal‐Relaxor‐Diffuse Ferroelectric Phase Transition and Electrical Properties of Bi(Mg1/2Ti1/2)3–PbZrO3–PbTiO3 Solid Solution Ceramics Near the Morphotropic Phase Boundary

Perovskite‐type xBi(Mg_1/2Ti_1/2)O₃–(0.56 ? x)PbZrO₃–0.44PbTiO₃ (xBMT–PZ–PT) ternary solid solution ceramics were synthesized via a conventional solid‐state reaction method. The phase transition behaviors, dielectric, ferroelectric, and piezoelectric properties were investigated as a function of the BMT content. The X‐ray diffraction analysis showed that the tetragonality of xBMT–PZ–PT was enhanced with increasing the BMT content, and a morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases was identified approximately in the composition of x = 0.08. In addition, the dielectric diffuseness and frequency dispersion behavior were induced with the addition of BMT and a normal‐relaxor‐diffuse ferroelectric transformation was observed from the PZ‐rich side to the BMT‐rich side. The electrical properties of xBMT–PZ–PT ceramics exhibit obviously compositional dependence. The x = 0.08 composition not only possessed the optimum properties with ε^T₃₃/ε₀ = 1450, Q_m = 69, d₃₃ = 390 pC/N, k_p = 0.46, P_r = 30 μC/cm², E_c = 1.4 kV/mm, T_c = 325°C, and a strain of 0.174% (d₃₃^* = 436 pm/V) under an electric field of 4 kV/mm as a result of the coexistence of two ferroelectric phases near the MPB, but also owned a good thermal‐depolarization behavior with a d₃₃ value of >315 pC/N up to 290°C and a frequency‐insensitive strain behavior.     

Large enhancement of piezoelectric properties and resistivity in Cu/Ta co-doped Bi4Ti3O12 high-temperature piezoceramics

In this study, the electrical properties of Bi₄Ti₃O₁₂-based Aurivillius-type ceramics were tailored by a B-site co-doping strategy combining high valence Ta⁵⁺ and low valence Cu²⁺. A series of Bi₄Ti_3−x(Cu_1/3Ta_2/3)_xO₁₂ (BTCT) (x = 0, 0.005, 0.01, 0.015, 0.02, 0.025, and 0.03) ceramics were prepared by the conventional solid-state reaction method. The effect of Cu/Ta co-doping on the crystal structure, microstructure, dielectric properties, piezoelectric properties, ferroelectric properties, and electrical conductivity of these ceramics was systematically investigated. Co-doping significantly enhanced the piezoelectric properties and DC electrical resistivity of the resulting composites. The optimized comprehensive performances were obtained at x = 0.015 with a large piezoelectric coefficient (34 pC/N) and a relatively high resistivity of 9.02 × 10⁶ Ω cm at 500°C. Furthermore, the ceramic also exhibited stable thermal annealing behaviors and excellent fatigue resistance. The results of this study demonstrated great potential of the Cu/Ta co-doped Bi₄Ti₃O₁₂ ceramics for high-temperature piezoelectric device applications.     

Growth and electrical properties of high-Curie point rhombohedral Mn-Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films

High-quality ternary relaxor ferroelectric (100)-oriented Mn-doped 0.36Pb(In_1/2Nb_1/2)O₃-0.36Pb(Mg_1/3Nb_2/3)O₃-0.28PbTiO₃ (Mn-PIMNT) thin films were grown on SrRuO₃-buffered SrTiO₃ single-crystal substrate in a wide deposition temperature range of 550-620°C using the pulsed laser deposition method. The phase structure, ferroelectric, dielectric, piezoelectric properties, and nanoscale domain evolution were studied. Under the deposition temperature of 620°C, the ferroelectric hysteresis loops and current-voltage curves showed that the film owned significantly enhanced remnant ferroelectric polarization of 34.5 μC/cm² and low leakage current density of 2.7 × 10⁻¹⁰ A/cm². Moreover fingerprint-type nanosized domain patterns with polydomain structures and well-defined macroscopic piezoelectric properties with a high normalized strain constant of 40 pm/V was obtained. Under in situ DC electric field, the domain evolution was investigated and 180° domain reversal was observed through piezoelectric force microscope. These global electrical properties make the current Mn-PIMNT thin films very promising in piezoelectric MEMS applications.     

Structural and electrical properties of ZnO-modified (1−x)Pb(Mg1/3Nb2/3)O3−xPbTiO3 ceramics with wide MPB regions

Ferro-/piezoelectric ceramics with high performances are generally found at the morphotropic phase boundary (MPB), where two or more different ferroelectric phases coexist. However, the MPB region is usually very narrow; for example, that of (1−x)Pb(Mg_1/3Nb_2/3)O₃−xPbTiO₃ (PMN-xPT) locates between x = 0.30−0.34. Herein, we report that ZnO-modified PMN-xPT polycrystalline ceramics have dramatically broadened MPB regions from x = 0.28, with rhombohedral and monoclinic coexisting phases, to x = 0.36, with tetragonal and monoclinic coexisting phases, as confirmed by powder X-ray diffraction and piezoresponse force microcopy measurements. The wide MPB region is attributed to lattice distortion caused by the substitution of Zn for Mg cations. As a result, the ceramics show composition insensitive electrical properties over wide composition ranges; for example, the piezoelectric coefficient (d₃₃) and electromechanical coupling factor (k_p) remain at near constant values of 450 pC/N and 0.5, respectively, in the range from x = 0.28−0.34. This work not only provides a robust and feasible method to broaden the MPB region but also offers some novel insights into promoting fundamental research on high-performance piezoelectric ceramics.     

Large strain response with low driving field in Bi1/2Na1/2TiO3–Bi1/2K1/2TiO3–Bi(Mg2/3Nb1/3)O3 ceramics

The (1?x)(0.8Bi_1/2Na_1/2TiO₃–0.2Bi_1/2K_1/2TiO₃)?xBiMg_2/3Nb_1/3O₃ (100xBMN) ternary solid solutions were designed and prepared using a conventional solid‐state reaction. Temperature and compositional dependent ferroelectric, piezoelectric, dielectric features, and structural evolution were systematically studied. At the critical composition of 2BMN, a large bipolar strain of 0.43% was achieved at 55 kV/cm, and the normalized strain reaches to 862 pm/V at a low driving electric field of 40 kV/cm. It was found that the substitution of BiMg_2/3Nb_1/3O₃ induces a transformation from ferroelectric to relaxor phase by disrupting the long range ferroelectric order. Therefore, as the external electric field was applied, a relaxor‐ferroelectric phase transition will be induced. This is contributed to the giant strain. The results above suggest that such a ternary composition is a promising candidate for application to actuator.     

Piezoelectric properties of (Na0.5K0.5)(Nb1‐xSbx)O3‐SrTiO3 ceramics with tetragonal‐pseudocubic PPB structure

CuO‐added 0.96(Na_0.5K_0.5)(Nb_1‐xSb_x)O₃‐0.04SrTiO₃ ceramics sintered at the low temperature of 960°C for 10 hours showed dense microstructures and high relative densities. The specimens with 0.0 ≤  x ≤ 0.04 had orthorhombic‐tetragonal polymorphic phase boundary (PPB) structure. Tetragonal‐pseudocubic PPB structure was observed in specimens with 0.05 ≤  x ≤ 0.07, while the specimen with x = 0.08 has a pseudocubic structure. The structural variation in the specimens is explained by the decreases in the orthorhombic‐tetragonal transition temperature and Curie temperature with the addition of Sb⁵⁺ ions. The specimens with 0.05 ≤  x ≤ 0.07, which have tetragonal‐pseudocubic PPB structure, had large electric field‐induced strains of 0.14%‐0.016%. Moreover, these specimens also showed increased d₃₃ values between 280 pC/N and 358 pC/N. In particular, the specimen with x = 0.055 showed particularly enhanced piezoelectric properties: d₃₃ of 358 pC/N, k_p of 0.45, and the electric field‐induced strain of 0.16% at 4.5 kV/mm.