Enhanced piezoelectric properties and electrical resistivity in W/Cr co-doped CaBi2Nb2O9 high-temperature piezoelectric ceramics

W/Cr co-doped Aurivillius-type CaBi₂Nb_2-x(W_2/3Cr_1/3)_xO₉ (CBN) (x?=?0.025, 0.050, 0.075, 0.100, and 0.150) piezoelectric ceramics were prepared by the conventional solid-state reaction method. The crystal structure, microstructure, dielectric properties, piezoelectric properties, and electrical conductivity of these ceramics were systematically investigated. After optimum W/Cr modification, the CBN ceramics showed both high d₃₃ and T_C. The ceramic with x?=?0.1 showed a remarkably high d₃₃ value of ~15 pC/N along with a high T_C of ~931?°C. Moreover, the ceramic also showed excellent thermal stability evident from the increase in its planar electromechanical coupling factor k_p from 8.14% at room temperature to 11.04% at 600?°C. After annealing at 900?°C for 2?h, the ceramic showed a d₃₃ value of 14?pC/N. Furthermore, at 600?°C, the ceramic also showed a relatively high resistivity of 4.9?×?10⁵ Ω?cm and a low tanδ of 9%. The results demonstrated the potential of the W/Cr co-doped CBN ceramics for high-temperature applications. We also elucidated the mechanism for the enhanced electrical properties of the ceramics.     

Ultra-stable X9R type CaCu3-xZnxTi4.1O12 ceramics

CaCu_3-xZn_xTi_4.1O₁₂ (x?=?0.00, 0.05 and 0.10) precursor powders were prepared by the polymer pyrolysis (PP) solution method. Ultra-stable X9R type capacitor with very low loss tangent (tanδ) ~0.017 varied within a value of less than 0.05 in a wide temperature range of ?60 to 150?°C and high dielectric constants (ε^′) ~9200 with Δε′ ≤?±?15% in a wide temperature range of ?60 to 210?°C was achieved in CaCu_2.95Zn_0.05Ti_4.1O₁₂ (Zn05-1) ceramic obtained by sintering the precursor powder (x?=?0.05) at 1060?°C for 8?h. A major role for the validity of ε^′ and tanδ in these wider temperature ranges was suggested to originated from the very high grain boundary resistance (R_gb ~413,190?Ω?cm), resulting from the effect of Zn²⁺ doping and TiO₂-rich at grain boundary. With the excellent dielectric properties of (Zn05-1) ceramic, it was suggested to be applied for X8R and X9R capacitors. Interestingly, improvements of nonlinear properties with very high nonlinear coefficient (α ~ 25.94) and breakdown field (E_b~ 3146.25?V.cm^?1) values were achieved in (Zn05-1) ceramic, as well.     

Enhancing the electrical conductivity of vanadate glass system (Fe2O3, B2O3, V2O5) via doping with sodium or strontium cations

Novel glass-ceramics of the nominal molar compositions 20Fe₂O₃·20B₂O₃·(60-x)V₂O₅· (xNa₂O or xSrO) (where x?=?0 or 10) were prepared by traditional melt technique. Differential thermal analysis (DTA) was implemented to study the thermal behavior of the prepared glasses. Vanadium pentoxide (V₂O₅), iron vanadate (FeVO₄), sodium vanadate (Na₃VO₄) and strontium vanadate (with different formulae) were crystallized and identified by X-ray diffraction (XRD) analysis under certain conditions of heat-treatment. Further characterization of glass and glass ceramics samples were performed using scanning electron microscope (SEM), density, electrical and dielectric measurements. In conclusion, our study elucidated that the substitution of vanadium by Na⁺ and Sr²⁺ ions enhanced the conductivity at 180?°C from 5.11?×?10^?4 for unmodified glass to 2.93?×?10^?3 and 1.03?×?10^?2?S?cm^?1 for Na- and Sr-modified glasses.     

Crystal structure,impedance and broadband dielectric spectra of ordered scheelite-structured Bi(Sc1/3Mo2/3)O4 ceramic

Bi(Sc_1/3Mo_2/3)O₄ ceramics were prepared via solid state reaction method. It crystallized with an ordered scheelite-related structure (a?=?16.9821(9)?Å, b?=?11.6097(3)?Å, c?=?5.3099(3)?Å and β?=?104.649(2)°) with a space group C12/C1, in which Bi³⁺, Sc³⁺ and Mo⁶⁺ are ?8, ?6 and ?4 coordinated, respectively. Bi(Sc_1/3Mo_2/3)O₄ ceramics were densifiedat 915?°C, giving a permittivity (ε_r) ～24.4, quality factor (Qf, Q?=?1/dielectric loss, f?=?resonant frequency) ～48, 100?GHz and temperature coefficient of resonant frequency (TCF)?～??68?ppm/°C. Impedance spectroscopy revealed that there was only a bulk response for conductivity with activation energy (E_a) ～0.97?eV, suggesting the compound is electrically and chemically homogeneous. Wide band dielectric spectra were employed to study the dielectric response of Bi(Sc_1/3Mo_2/3)O₄ from 20?Hz to 30?THz. ε_r was stable from 20?Hz to the GHz region, in which only ionic and electron displacive polarization contributed to the?ε_r.     

Cation distribution of high-performance Mn-substituted ZnGa2O4 microwave dielectric ceramics

In current study, only 5?mol% Mn²⁺ was applied to fabricate high performance microwave dielectric ZnGa₂O₄ ceramics, via a traditional solid state method. The crystal structure, cation distribution and microwave dielectric properties of as-fabricated Mn-substituted ZnGa₂O₄ ceramics were systematically investigated. Mn²⁺-substitution led to a continuous lattice expansion. Raman, EPR and crystal structure refinement analysis suggest that Mn²⁺ preferentially occupies the tetrahedral site and the compounds stay normal-spinel structure. The experimental and theoretical dielectric constant of Zn_1-xMn_xGa₂O₄ ceramics fit well. In all, this magnetic ion, Mn²⁺, could effectively adjust the τ_f value to near zero and double the quality factor from 85,824?GHz to 181,000?GHz of Zn_1-xMn_xGa₂O₄ ceramics at the meantime. Zn_1-xMn_xGa₂O₄ (x?=?0.05) ceramics sintered at 1400?°C for 2?h exhibited excellent microwave dielectric properties, with ε_r =?9.7(@9.85?GHz), Q?×?f?=?181,000?GHz, tanδ?=?5.44?×?10^?5,and τ_f =???12?ppm/°C.     

Preparation of dense 0.9Al2O3−0.1TiO2 ceramics with highly improved microwave dielectric properties by a noncontaminated DCC method

In this paper, dense 0.9Al₂O₃ ??0.1TiO₂ ceramics with highly improved microwave dielectric properties were prepared by a noncontaminated direct coagulation casting (DCC) method. The suspension was destabilized and coagulated by consumption of the dispersant without introducing impurity ions. The effect of dispersant content, pH value and solid loading on the rheological properties of 0.9Al₂O₃ ??0.1TiO₂ suspension was investigated. It was found that 0.9Al₂O₃ ??0.1TiO₂ suspension with a high solid loading of 50?vol% and low viscosity of 0.7?Pa?s could be prepared by adding 0.5?wt% TMAOH at the pH in the range of 10–12. The suspension was coagulated by adding 2?vol% GDA when it was treated at 60 ~ 80?°C for 40 ~ 60?min. Compared with dry pressing method, more homogeneous and denser microstructure could be obtained in 0.9A1₂O₃ ??0.1TiO₂ ceramics prepared by DCC via dispersant reaction which were sintered at 1550?°C for 3?h and annealed at 1100?°C for 5?h. The Al₂TiO₅ second phase in 0.9A1₂O₃ ??0.1TiO₂ ceramics prepared by DCC via dispersant reaction could be eliminated more easily by annealing treatment. After annealing treatment, only Al₂O₃ and TiO₂ phases could be detected. Therefore, higher density and much better microwave dielectric properties with ρ?=? 3.81?±?0.02?g/cm³, ε_r =?12.17?±?0.02, Q ×?f =?25,637?±?749?GHz, τ_f =?13.12?±?1.62?ppm/°C were obtained by DCC via dispersant reaction, and the Q ×?f value almost improved by 25%. Without introducing impurity ions, it provides a new insight into preparing complex shaped function ceramics with high properties.     

Structural and thermoelectric properties of hydrothermal-processed Ag-doped Fe2O3

Fe_2-xAg_xO₃ (0?≤?x?≤?0.04) nanopowders with various Ag contents were synthesized at different hydrothermal reaction temperatures (150?°C and 180?°C). Their structural properties were fully investigated through an X-ray diffraction, a Fourier transform infrared spectroscopy, and an X-ray photoelectron spectroscopy. The hydrothermal reaction temperature, time, and Ag content remarkably affected the morphological characteristics and crystal structure of the synthesized powders. The Fe_2-xAg_xO₃ (0?≤?x?≤?0.04) powders synthesized at 150?°C for 6?h and the Fe_2-xAg_xO₃ (0.02?≤?x?≤?0.04) powders synthesized at 180?°C for 12?h formed the orthorhombic α-FeOOH phase with a rod-like morphology, whereas the Fe_2-xAg_xO₃ (0?≤?x?≤?0.01) powders synthesized at 180?°C for 12?h formed the rhombohedral α-Fe₂O₃ phase with a spherical-like morphology. The Fe_1.98Ag_0.02O₃ fabricated by utilizing Fe_1.98Ag_0.02O₃ powders synthesized at 180?°C showed the largest power factor (0.64?×10^?5 Wm^?1 K^?2) and dimensionless figure-of-merit (0.0036) at 800?°C.     

Effects of Li2O-B2O3-SiO2 glass on the low-temperature sintering of Zn0.15Nb0.3Ti0.55O2 ceramics

The influences of Li₂O-B₂O₃-SiO₂ glass (LBS) on the activation energy, phase composition, the stability of the structure and microwave dielectric properties of Zn_0.15Nb_0.3Ti_0.55O₂ ceramics have been systematically investigated. LBS glass acted as flux former and contributed to the reactive liquid-phase sintering mechanism, which remarkably lowed the sintering temperature from 1150?°C to 900?°C and enhanced the shrinkage and densification of ceramic at the low sintering temperatures. The ceramics with 1.5?wt% LBS glass sintered at 900?°C for 3?h show great properties: ε_r = 73.59, Q × f = 8024?GHz, τ_f = 270.54?ppm/°C.     

Dielectric properties of CaO–B2O3–SiO2 glass-ceramic systems in the millimeter-wave frequency range of 20–60 GHz

The dielectric and structural properties of the as-quenched melts of three CaO–B₂O₃–SiO₂ compositions (denoted CBS-1, CBS-2, and CBS-3) were investigated to determine their suitability for use in millimeter-wave applications. The CBS-1 glass-ceramic exhibited the lowest coefficient of thermal expansion (CTE = 3.2 ppm/°C), lowest dielectric constant (ε_r = 4.04) at 60 GHz, and highest dielectric loss (tan δ = 0.0029) at 60 GHz, which were attributed to the presence of quartz (SiO₂) as the major phase. In contrast, as the major phase constituent of the CBS-2 and CBS-3 glass-ceramics was β-CaSiO₃, they presented relatively high CTEs (6.6 and 5.9 ppm/°C, respectively), relatively high dielectric constants at 60 GHz (6.29 and 7.61, respectively), and relatively low dielectric losses at 60 GHz (0.0020 and 0.0012, respectively). The CBS-1 glass-ceramic exhibited the highest dielectric loss because of the presence of SiO₂ as the major phase constituent as well as lattice scattering induced by the high glassy phase content. The thermal conductivities (κ) of the CBS-1, CBS-2, and CBS-3 glass-ceramics were determined to be 2.43, 1.06, and 0.82 W/mK, respectively. Structural analysis using Raman and Fourier transform infrared spectroscopy revealed an absence of nonbridging oxygen in the CBS-1 glass-ceramic, while the high CaO content (>40 mol%) of the CBS-2 and CBS-3 glass-ceramics triggered the formation of nonbridging oxygen in the tetrahedral silicate units. The increase in CaO content of the glass-ceramics increased the number of nonbridging oxygen atoms, thereby resulting in the relaxation of the structure. Consequently, the CBS-2 and CBS-3 glass-ceramics exhibited low thermal conductivity. All the prepared glass-ceramics presented high electrical resistivities of greater than 5 × 10¹¹ Ω cm. The CBS-1 glass-ceramic displayed the highest breakdown strength of 15.20 kV/mm. Overall, the excellent microwave dielectric properties and thermal properties of the CBS glass-ceramics will facilitate the utilization of these materials in millimeter-wave applications.     

High carrier mobility low-voltage ZnO thin film transistors fabricated at a low temperature via solution processing

Wide-bandgap ZnO TFTs have many potential applications in large-area, flexible electronics and transparent devices because of their low cost, high performance and excellent optical transmittance. High-performance ZnO TFTs fabricated via simple solution processing have been widely studied. However, the key issues of solution-processable ZnO TFTs are the relatively high processing temperature (> 300?°C) and the high operating voltage for achieving the desired electrical properties. Here, we successfully fabricated low-voltage ZnO TFTs at an annealing temperature of ≤?250?°C. The resulting ZnO transistors with high-k terpolymer P(VDF-TrFE-CFE) showed a mobility of up to 5.3?cm² V^?1 s^?1 and an on/off ratio of >?10⁵ at 3?V. Furthermore, the influence of the dielectric constant on the carrier mobility was investigated. A lower k-value dielectric resulted in a high carrier mobility under the same carrier density. Therefore, with a low-k CYTOP dielectric applied to modify the interface between the ZnO semiconductor and the P(VDF-TrFE-CFE) layer, ZnO transistors annealed at 250?°C showed an electron mobility of 13.6?cm² V^?1 s^?1 and an on/off ratio of >?10⁵ at 3?V. To the best of our knowledge, this mobility is the highest value reported to date among the low-voltage solution-processable undoped ZnO TFTs annealed at temperatures of ≤?300?°C.     

Dielectric,ferroelectric, and energy storage properties in dysprosium doped sodium bismuth titanate ceramics

In this work, Na_0.5(Bi_1-xDy_x)_0.5TiO₃ (0?≤?x?≤?15%) ceramics were prepared via solid state reaction method and were characterized. A stable and pure perovskite phase was revealed by X-ray diffraction analysis for all compositions and a symmetry change from rhombohedral to orthorhombic phase was detected beyond 10% of Dy substitution. The incorporation of Dy³⁺ into Sodium Bismuth Titanate (Na_0.5Bi_0.5TiO₃) matrix allows a substantial decrease of the coercive field, an increase in the resistivity, and leads to a high stability of the dielectric permittivity (??/?_(150?°C) ≤?±?15%) over a wide temperature range. Furthermore, this system was found to exhibit improved energy storage properties at high temperatures with a maximum energy density of 1.2?J/cm³ obtained for 2%Dy composition at 200?°C. The obtained results are very promising for energy storage capacitors operating at high temperatures.     

Dielectric abnormality and high-permittivity microwave dielectric properties of SrO-TiO2-CeO2 solid solution

The SrO-TiO₂-CeO₂ (Sr_1?1.5×Ce_xTiO₃, SCTO, 0?≤?x?≤?0.2, sintered in N₂) solid solution exhibited the existence of dielectric abnormality/anomaly (for polished samples) and high-permittivity microwave dielectric properties (for unpolished samples). X-ray diffraction (XRD) and Rietveld refinement, along with high-resolution transmission electron microscopy (HRTEM), indicated the evidence of cubic like structure. The SEM-EDX maps demonstrated the formation of a complete solid solution, which further support the XRD results. X-ray photoelectron spectroscopy (XPS) analysis showed mixture of ion valence states upon lattice defects formation. The activation of the TO2/TiO4 polar bands usually described a relaxor-type-dielectric anomaly. The ε′-T curve, together with the polar nature measurements exhibited hysteresis loops, indicating that ceria ions induced weak relaxor behavior. The observed Q×f values were primarily dependent on the lattice defects and Ti³⁺ cations. The temperature coefficient of resonant frequency (${\tau }_f$) shifted gradually from more positive (+1321?ppm/°C) to less positive (+539?ppm/°C) values with a rise of Ce content (x). The unpolished sample with x?=?0.2 exhibited a high permittivity microwave dielectric properties with ε_r =?182, ${\tau }_f$?=?+539?ppm/°C, and Q×f =?668?GHz.     

Sintering behavior,structure and dielectric properties of CuO-ZnO-MgO-B2O3 glass-ceramics for ULTCC applications

High performance ultra-low temperature co-fired ceramic (ULTCC) materials were prepared from CuO- MgO- ZnO- Al₂O₃- B₂O₃- Li₂O glass-ceramics. The sintering behaviors, crystalline phase evolution, microstructure and dielectric properties, as well as their compatibility with Ag and Al electrodes, were investigated. With the suitable substitution of MgO for ZnO, the dielectric properties of glass-ceramics were improved. It is mainly associated with the fine microstructure, highly crystallinity, and decrease in tetrahedral distortion in the crystal lattice. All the glasses completed the densification at 575–600 °C, and ZnB₄O₇ is the only crystalline phase precipitated from the glasses. Moreover, the glass-ceramic with 1 wt% MgO sintered at 575 °C for 5 h, exhibited low relative permittivity ~ 7.1 and low dielectric loss ~ 6.40 × 10^?4. And the glass-ceramic with 4 wt% MgO sintered at 600 °C for 5 h, also displayed low relative permittivity ~ 7.1 and low dielectric loss ~ 5.77 × 10^?4. Both two glasses have good sintering compatibility with silver and aluminum electrodes, which provided high potential for ULTCC application.     

High electromechanical strain properties by the existence of nonergodicity in LiNbO3–modified Bi1/2Na1/2TiO3–SrTiO3 relaxor ceramics

This study investigated the effect of LiNbO₃ modification on the dielectric, ferroelectric and electromechanical strain properties of Bi_1/2Na_1/2TiO₃–SrTiO₃ (BNT–ST) lead–free relaxor ceramics. The sintering temperature for lead–free BNT–ST relaxor ceramics was slightly decreased from 1175?°C to 1050?°C by modifying with LiNbO₃. We found that the sintering temperature affects the dielectric behavior of 0.76BNT–(0.24?x)ST–xLiNbO₃ (BNST–100xLN) ceramics at high temperature (near dielectric maximum temperature, T_m). The T_m for the low–temperature sintered sample was shifted to relatively higher temperature by comparison with the high–temperature sintered samples. Furthermore, the degradation of dielectric behavior near T_m in low–temperature sintered BNST–2LN ceramics was revealed after poling treatment and seem to be related to the existence of a high temperature stabilized nonergodic relaxor phase. Accordingly, we assume that the stabilized nonergodic relaxor phase is responsible for the relatively late transition from ferroelectrics to the relaxor. Therefore, we obtained the improved d₃₃^* of 616?pm/V as the highest value in low–temperature sintered BNST–2LN ceramics.     

Composition-dependent xBa(Zr0.2Ti0.8)O3-(1-x)(Ba0.7Ca0.3)TiO3 bulk ceramics for high energy storage applications

This work reports the composition dependent microstructure, dielectric, ferroelectric and energy storage properties, and the phase transitions sequence of lead free xBa(Zr_0.2Ti_0.8)O₃-(1-x)(Ba_0.7Ca_0.3)TiO₃ [xBZT-(1-x)BCT] ceramics, with x?=?0.4, 0.5 and 0.6, prepared by solid state reaction method. The XRD and Raman scattering results confirm the coexistence of rhombohedral and tetragonal phases at room temperature (RT). The temperature dependence of Raman scattering spectra, dielectric permittivity and polarization points a first phase transition from ferroelectric rhombohedral phase to ferroelectric tetragonal phase at a temperature (T_R-T) of 40?°C and a second phase transition from ferroelectric tetragonal phase - paraelectric pseudocubic phase at a temperature (T_T-C) of 110?°C. The dielectric analysis suggests that the phase transition at T_T-C is of diffusive type and the BZT-BCT ceramics are a relaxor type ferroelectric materials. The composition induced variation in the temperature dependence of dielectric losses was correlated with full width half maxima (FWHM) of A₁, E(LO) Raman mode. The saturation polarization (P_s) ≈8.3?μC/cm² and coercive fields ≈2.9?kV/cm were found to be optimum at composition x?=?0.6 and is attributed to grain size effect. It is also shown that BZT-BCT ceramics exhibit a fatigue free response up to 10⁵ cycles. The effect of a.c. electric field amplitude and temperature on energy storage density and storage efficiency is also discussed. The presence of high T_T-C (110?°C), a high dielectric constant (ε_r ≈?12,285) with low dielectric loss (0.03), good polarization (P_s ≈?8.3?μC/cm²) and large recoverable energy density (W?=?121?mJ/cm³) with an energy storage efficiency (η) of 70% at an electric field of 25?kV/cm in 0.6BZT-0.4BCT ceramics make them suitable candidates for energy storage capacitor applications.     

Effect of boron on crystallization,microstructure and dielectric properties of CBS glass-ceramics

Herein, we demonstrate the preparation of CBS glass-ceramics by using chemically pure CaO, SiO₂ and B₂O₃ as raw materials. Differential scanning calorimetry (DSC), X-ray diffraction (XRD), scanning electron microscopy (SEM), and electrical measurements have been carried out to explore the effect of boron addition on crystallization, microstructure and dielectric properties of CBS glass-ceramics. Furthermore, the influence of sintering temperature and sintering schemes has been systematically investigated. Results show that the increase of boron content reduces crystallization temperature of CBS glass-ceramics. For instance, with the increase of boron oxide from 10.8?wt% to 19.4?wt%, crystallization temperature decreased by 130?°C. However, excessive boron affects the precipitation of wollastonite crystal phase, destroys crystal structure and damages close arrangement of crystal grains. Moreover, higher boron content weakens dielectric properties of CBS glass-ceramics. In this study, the best molar ratio of ingredients, meeting the ideal target material, is n(Ca): n(Si): n(B) =?1:1:0.6. After optimal sintering procedure, dielectric constant of the best sample was 6 (1?MHz), 6 (10?MHz), and dielectric loss was 2.27?×?10^?3 (1?MHz) and 3.37?×?10^?3 (10?MHz). We demonstrate that the optimal boron content and sintering procedure is required to attain desired dielectric properties of CBS glass-ceramics.     

Low temperature sintering and microwave dielectric properties of Zn1.8SiO3.8 ceramics with BaCu(B2O5) additive for LTCC applications

The Zn_1.8SiO_3.8 (ZS) ceramics with BaCu(B₂O₅) (BCB) additive were synthesized by the conventional solid-state reaction route and the effect of BCB additive on the microwave dielectric properties of the ceramics was investigated. The results demonstrate that BCB could effectively decrease the sintering temperature from 1300?°C to 930?°C and does not induce obviously degradation of the microwave dielectric properties. The 6.wt% BCB added ZS ceramics exhibited a low sintering temperature (~ 930?°C) and excellent dielectric properties of ε_r =?6.79, Q×f =?33,648?GHz, and τ_f =??30?ppm/°C. To compensate the negative τ_f value of this system, TiO₂ powders were introduced. Particularly when 10.wt% TiO₂ was added, good microwave dielectric properties of ε_r=?8.175, Q×f=?21,252?GHz, and τ_f =?1.2?ppm/°C were obtained for the 6.wt% BCB added ZS ceramic sintered at 930?°C for 3?h. Moreover, BCB added ZS-TiO₂ ceramics have a chemical compatibility with silver, which indicate that the BCB added ZS ceramics are promising candidate for LTCC applications.     

Low-temperature sintering and microwave dielectric properties of CaSnxSiO(3+2x)-based positive τf compensator

The sinterability, phase compositions, and microwave dielectric properties of LiF-doped nonstoichiometric CaSn_xSiO_(3+2x) ceramics prepared by the solid-state reaction were investigated. LiF addition effectively reduced the sintering temperature of CaSn_xSiO_(3+2x) ceramics and inhibited the volatilization of Sn. A pure monoclinic CaSnSiO₅ phase was achieved in the 1.0?wt% LiF-doped CaSn_0.94SiO_4.88 ceramics sintered at 1175?°C, which exhibited good microwave dielectric properties of ε_r =?11.6, Q?×?f?=?34000?GHz, and τ_f =?+73.2?ppm/°C. The positive τ_f value was an atypical and important phenomenon for low-permittivity microwave dielectric ceramics, which could be a promising τ_f compensator.     

Microwave dielectric properties of ultra-low loss Li2MgTi0.7(Mg1/3Nb2/3)0.3O4 ceramics sintered at low temperature by LiF addition

In this work, ultra-low loss Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics were successfully prepared via the conventional solid-state method. X-ray photoelectron spectroscopy (XPS), thermally stimulated depolarization current (TSDC) and bond energy were used to determine the distinction between intrinsic and extrinsic dielectric loss in (Mg_1/3Nb_2/3)⁴⁺ ions substituted ceramics. The addition of (Mg_1/3Nb_2/3)⁴⁺ ions enhances the bond energy in unit cell without changing the crystal structure of Li₂MgTiO₄, which results in high Q·f value as an intrinsic factor. The extrinsic factors such as porosity and grain size influence the dielectric loss at lower sintering temperature, while the oxygen vacancies play dominant role when the ceramics densified at 1400?°C. The Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics sintered at 1400?°C can achieve an excellent combination of microwave dielectric properties: ε_r =?16.19, Q·f?=?160,000?GHz and τ_f =??3.14?ppm/°C. In addition, a certain amount of LiF can effectively lower the sintering temperature of the matrix, and the Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄-3?wt% LiF ceramics sintered at 1100?°C possess balanced properties with ε_r?=?16.32, Q·f?=?145,384?GHz and τ_f =??16.33?ppm/°C.     

Phase evolution and microwave dielectric properties of MgO-B2O3-SiO2-based glass-ceramics

The densification and crystallization behaviors of MgO-B₂O₃-SiO₂ (MBS) glass with various amounts of TiO₂ additions (0-10 wt.%) were investigated by means of thermal analysis, X-ray powder diffraction and scanning electron microscopy. A microwave dielectric characterization was performed in order to evaluate the suitability of MBS glass-ceramics as a low-permittivity dielectric substrate. The densification of the MBS glass started below 700 °C. The main crystalline phases of Mg₂B₂O₅ and MgSiO₃ appeared at 800 and 950 °C, respectively. The Mg₃TiB₂O₈ and TiB_0.024O₂ phases additionally crystallized in TiO₂-added MBS glass-ceramics at 1000 °C. The permittivity increased from 6.1 in pure MBS glass to 6.9 in MBS glass with 10 wt.% of TiO₂. The addition of TiO₂ enhanced the crystallization and consequently increased the Qxf-values of the MBS glass (11 300 GHz) up to 16 500 GHz. The improvement of the Qxf-values became the most evident at 1050 °C. Dense MBS glass-ceramics sintered at 850 ≤ T ≤ 950 °C exhibited Qxf-values of 5000-8000 GHz (at ∼12 GHz), which are comparable with the values of CaO-B₂O₃-SiO₂-based glass-ceramics.