Crystalline Solution in the System MgO-Mg,SiO4,-MgAl2,O4,

Crystalline solubility relations in the system MgO-Mg₂SiO₄MgAl₂O₄ (periclase-forsterite-spinel) were studied using coprecipitated gels as starting materials. The substitution 2Al = Mg + Si was investigated along the join Mg₂SiO₄-Mg-Al₂O₄,. At 1720°C the maximum crystalline solution in forsterite is about 0.5 mole % MgAI₂O₄, and in spinel it is slightly more than 5.0 mole % Mg₂SiO₄. The solubility of MgO in forsterite was 0.5 mole % at 1860°C, whereas more than 11 mole % Mg₂SiO₄ can be dissolved in the periclase structure at this temperature. Ternary crystalline solution exists in the periclase structure to a composition of Mg_0.853Al_0.063Si_0.026O at 1710°C.     

The Join Ca2SiO4-CaMgSiO4

New data obtained on the join Ca₂SiO₄-CaMgSiO₄ established a limit of crystalline solubility of Mg in α-Ca₂SiO₄ corresponding to the composition Ca_1.90Mg_0.10SiO₄ at 1575°C. The α-α'Ca₂SiO₄ inversion temperature is lowered from 1447° to 1400°C by Mg substitution in the lattice. α'-Ca₂SiO₄ takes Mg into its lattice up to the composition Ca_1.94Mg_0.06SiO₄ at 1400°C and to Ca_1.96Mg_0.04SiO₄ at 900°C. A new phase (T) reported previously by Gutt, with the approximate composition Ca_1.70Mg_0.30SiO₄, was stable between 979° and 1381°C, and should be stable at liquidus temperatures in multicomponent systems involving CaO–MgO–SiO₂.     

Phase Relations in the System Si3N4-SiO2-MgO and Their Interrelation with Strength and Oxidation

Phase relation studies of Si₃N₁, SiO₂, and MgO have established three important subsolidus tie lines, viz. Si₃N₄-MgO, Si₃N₄-Mg₂SiO₄, and Si₂N₂O-Mg₂SiO₄ for nonoxidizing fabrication conditions. Strength measurements at 1400°C show that optimum strengths are obtained for compositions approaching the Si₃N₄-MgO and Si₃N₄-Si₂N₂O tie lines and that inferior strengths are obtained for compositions approaching the Si₃N₄-Mg₂SiO₄ tie line. Oxidation measurements at 1375°C show that the oxidation kinetics depend on the content of MgO and Mg₂SiO₄ phases. Optimum oxidation resistance is observed for compositions approaching the Si₃N₄-Si₂N₂O tie line. Strength and oxidation results are discussed with regard to phase equilibrium considerations.     

Effect of BaWO4 on the Microwave Dielectric Properties of Ba(Mg1/3Ta2/3)O3 Ceramics

Physical and microwave dielectric properties of complex perovskite Ba(Mg_1/3Ta_2/3)O₃ ceramics have been investigated as a function of the amount of BaWO₄ in the temperature range from 20° to 80°C at 10.5 GHz. Up to 0.05 mol BaWO₄ addition, the lattice constant ratio ( c/a ), ordering parameter, apparent density, and unloaded Q all increase, due to the increase in the substitution of Ta⁵⁺ ions of Ba(Mg_1/3Ta_2/3)O₃ by W⁶⁺ ions from the melted BaWO₄ at above 1430°C. With further addition of BaWO_4, the unloaded Q decreases, due to an increase of the BaWO₄ phase. The temperature coefficient of resonant frequency (TCF) can be controlled by the volume mixture rule of Ba(Mg_1/3Ta_2/3)O₃ and BaWO₄. When 0.09 mol BaWO₄ is added, TCF becomes 0 ppm/°C.     

Synthesis and Microwave Dielectric Properties of MgSiO3 Ceramics

MgSiO₃ ceramics were synthesized and their microwave dielectric properties were investigated. The Mg₂SiO₄ phase was formed at temperatures lower than 1200°C, while the orthorhombic MgSiO₃ phase started to form by the reaction of SiO₂ and Mg₂SiO₄ in the specimen fired at 1200°C. The structure of the MgSiO₃ ceramics was transformed from orthorhombic to monoclinic when the sintering temperature exceeded 1400°C. A dense microstructure was developed for the specimens sintered at above 1350°C. The excellent microwave dielectric properties of ɛ_r=6.7, Q × f =121 200 GHz, and τ_f=−17 ppm/°C were obtained from the MgSiO₃ ceramics sintered at 1380°C for 13 h.     

Novel Mg2Zr5O12/Mg2Zr5O12–ZrO2–MgF2 Gradient Layer Coating on Magnesium Formed by Microarc Oxidation

A novel Mg₂Zr₅O₁₂-based coating on magnesium was formed by microarc oxidation (MAO) in a K₂ZrF₆-containing electrolyte. The structure of the coating was examined by X-ray diffraction using the grazing angle method, scanning electron microscopy, and transmission electron microscopy. The friction and wear properties of the MAO-coated and -uncoated Mg samples were evaluated in a ball-on-disk testing system. The corrosion resistance of the coating in a 3.5% NaCl solution was investigated by the potentiodynamic polarization test. The coating is relatively dense and composed of a Mg₂Zr₅O₁₂–ZrO₂–MgF₂ inner layer and a nanocrystalline Mg₂Zr₅O₁₂ outer layer with a maximum hardness of 1240 Hv. The friction coefficient of the coating against Si₃N₄ is 0.35 under a dry-sliding condition. The corrosion resistance of the magnesium substrate is improved considerably by MAO treatment. The corrosion potential of the Mg₂Zr₅O₁₂-coated sample is −1.43 V with a current density as low as 7.06 × 10⁻⁸ A/cm². It is expected that the coating can considerably protect magnesium from wear and corrosion.     

The System KAlSiO4–Mg2SiO4–KAlSi2O6

Schairer's study (1954) on phase relations in the system KalSi₂O₆–Mg₂SiO₄–SiO₂ was extended to include the system KalSiO₄–Mg₂SiO₄–KalSi₂O₆. It is shown that this join is ternary; however, the relatively high vapor pressure of the condensed phases prohibits study by the usual quenching techniques. The apparent intersection of the (KalSiO₄–Mg₂SiO₄–SiO₃) join with the primary phase volume of spinel is attributed to loss of the alkali-silicate constituents by vapor transport. This results in the effective bulk composition being moved away from this join toward the primary phase volume of spinel in the system K₂O–MgO–Al₂O₃–SiO₂.     

Creep of Polycrystalline MgO-FeO-Fe2O3 Solid Solutions

Steady-state creep experiments were performed on hot-pressed polycrystalline MgO doped with Fe. Dead-load 4-point bend creep tests were conducted at stresses of 26 to 270 kg/cm², at temperatures of 1250° to 1450°C, in O₂ partial pressures of 1 to 10⁻⁹ atm, on specimens with grain sizes of 10 to 65 μm. Viscous steady-state creep was always observed when the grain size was stable. Experiments at variable P _O2's and temperatures were used to identify regimes of high (117 ± 10 kcal/mol) and low (81 ± 5 kcal/mol) activation energy. In the latter, creep rates were nearly independent of Fe dopant concentration and P _O2, whereas in the former creep rates were enhanced by increasing P _O2's and Fe dopant levels. The high- and low-activation-energy regimes were interpreted as diffusional creep controlled primarily by Mg lattice diffusion and O grain-boundary diffusion, respectively.     

Equilibria of SiF4 with SiO2, Be2SiO4, and BeO in Molten Li2BeF4

Equilibrium partial pressures of SiF₄ were measured for the reactions 2SiO₂( c )+2BeF₂( d )⇋SiF₄( g )+Be₂SiO₄( c ) (log P _siF4(mm) = [8.790 - 7620/ T ] ±0.06(500°–640°C)) and Be₂SiO₄( c ) +2BeF₂( d )⇋SiF₄( g ) +4BeO( c )(log P _siF4(mm) = [9.530–9400/T] ±0.04 (700°–780°C)), wherein BeF₂ was present in solution with LiF as molten Li₂BeF₄. The solubility of SiF₄ was low (∼0.04 mol kg^-1 atm^-1) in the melt. The results for the first equilibrium were combined with available thermochemical data to calculate improved Δ H_f and Δ G_f values for phenacite (–497.57 ±2.2 and –470.22±2.2 kcal, respectively, at 298°K). The few measurements above 700°C for the second equilibrium are consistent with the temperature of the subsolidus decomposition of phenacite to BeO and SiO₂ and with the heat of this decomposition as determined by Holm and Kleppa. Below 700°C, the pressures of SiF₄ generated showed an increasing positive deviation from the expression given for the equilibrium involving Be₂SiO₄ and BeO. This deviation might have been caused by the formation of an unidentified phase below 700°C which replaced the BeO; it more likely resulted from a metastable equilibrium involving BeO and SiO₂.     

Solid Solubility and Polymorphism in the System Sr2SiO4-Sr2GeO4-Ba2GeO4-Ba2SiO4

The reciprocal salt pair Sr₂SiO₄-Sr₂GeO₄-Ba₂GeO₄-Ba₂SiO₄ was investigated using X-ray powder diffraction and DTA. Unlimited solubility in the low-K₂SO₄ structure type (α') occurs throughout the system above 85°C. The nonlinear changes of some lattice constants of the solid solutions are discussed. A stable monoclinic low-temperature (β) form of Sr₂SiO₄ was found which converts reversibly to the high-temperature α'-modification at 85°C. The enthalpy of the β-α' transition is 51 cal/mol. In the reciprocal salt pair the β-form solid solutions occur in a very narrow region below 85°C.     

Cation Tracer Diffusion in Cr2O3 and Cr2O3-0.09 wt% Y2O3

The cation diffusivities in the lattice and along dislocations and grain boundaries have been measured on sintered polycrysals of Cr₂O₃; and Cr₂Cr₂O₃-0.09 wt% Y₂O₃ at1100°C and at the pO₂ corresponding to that of Cr/Cr₂O₃ equilibrium at that temperature. Results for lattice and dislocation diffusivities in pure Cr₂O₃ are in good agreement with previous work. The present results indicate that yttrium additions have negligible effect on lattice and dislocation diffusion. However, grain-boundary diffusion in pure Cr₂O₃ is significantly slower than grain-boundary diffusion in Cr₂O₃-0.09 wt% Y₂O₃. The results are discussed in terms of their implications for the reactive-element effect in high-temperature oxidation of chromium-containing alloys.     

Formation of Sm2+ lons in Sol-Gel-Derived Glasses of the System Na2 O-Al2O3-SiO2

Samarium ions (Sm²⁺) incorporated into aluminosilicate glasses by a sol-gel process showed persistent spectral hole burning at room temperature. Gels of the system Na₂O-Al₂O₃SiO₂ synthesized by the hydrolysis of Si(OC₂H₅)₄, Al(OC₄H₉)₃, CH₃ COONa, and SmCl₃·6H₂O were heated in air at 500°C, then reacted with H₂ gas to form Sm²⁺ ions. Whereas Al³⁺ ions effectively dispersed the Sm³⁺ ions in the glass structure, Na⁺ ions were not effective. The Al₂O₃-SiO₂ glasses proved appropriate for reacting the Sm³⁺ ions with H₂ gas and exhibited the intense photoluminescence of Sm²⁺ ions. The reaction of Sm³⁺ ions with H₂ in the Al₂O₂-SiO₂ glasses was determined by first-order kinetics, and the activation energy equaled 95 kJ/mol. At 800°C, the maximum photoluminescence of the Sm²⁺ ions was achieved within 20 min.     

Ion-Probe Measurement of Oxygen Self-Diffusion in Single-Crystal Al2O3

Anion self-diffusion coefficients normal to (1102) were obtained for single-crystal Al₂O₃ in a 1.3 × 10 ³ N/m² (10⁻⁵ torr) vacuum at 1585° to 1840°C. Tracer was supplied from an initial 650 to 1300 A Al₂¹⁸O₃ layer produced by the oxidation of vapor-deposited Al metal films in an ¹⁸O₂ atmosphere at 520°C. Concentration gradients extended over depths of 3000 to 5000 A and were measured by mass spectrometry of material sputtered from the samples with a beam of Ar⁺ ions. Crystals which had not been preannealed to remove surface damage displayed enhanced diffusion. Diffusion coefficients from preannealed crystals may be described by D₀ =6.4×10⁵cm²/s, with an activation energy of 188 ± 7 kcal/mol. The diffusion is interpreted as an extrinsic vacancy mechanism.     

Phase Relations in the System MgO-V2O3-VO2 at 1200°C

Phase relations in the quasi-ternary system MgO-V₂O₃-VO₂ at 1200°C were studied using the quenching technique under controlled O₂ atmospheres. A new phase of a type z VO _y Mg_{2− x} V_{1+ x} O₄ (0< x <1, y ≥1.5, z >0) was found with a compositional region along the MgV₂O₄-Mg₂VO₄ join. Equilibrium P _{O 2} observed for Mg_{2− x} V_{1+ x} O₄ is quite different from that for V _n O_{2 n -1} with an equal ratio of V³⁺/V⁴⁺, corresponding to the V³⁺ stabilities in two types of compounds. Thus, the phase relations in the ternary system were constructed on a conventional triaxial diagram as a function of P _O2.     

Synthesis of 0.4Pb(Mg1/3Nb2/3)O3–0.3Pb(Mg1/2W1/2)O3–0.3PbTiO3 Ceramics by Metal Alkoxide Method, and Its Dielectric Properties

0.4Pb(Mg_1/3Nb_2/3)O₃–0.3Pb(Mg_1/2W_1/2)O₃–0.3PbTiO₃+ x MgO ( x = 0 to 0.04) were prepared by a metal alkoxide method. The percent of perovskite phase of the calcined powders increased with increased calcination temperatures. About 89% of perovskite phase was obtained at 1050°C. The dielectric constant of the pellets fired at 1100°C was increased by the addition of 10 wt% excess Mg(OC₂H₅)₂ and had a maximum value of 7532 at 1 kHz.     

A Novel Temperature-Compensated Microwave Dielectric (1−x)(Mg0.95Ni0.05)TiO3−xCa0.6La0.8/3TiO3 Ceramics System

The microstructure and microwave dielectric properties of a (1− x )(Mg_0.95Ni_0.05)TiO₃− x Ca_0.6La_0.8/3TiO₃ ceramics system have been investigated. The system was prepared using a conventional solid-state ceramic route. In order to produce a temperature-stable material, Ca_0.6La_0.8/3TiO₃ was added for a near-zero temperature coefficient (τ_f). With partial replacement of Mg²⁺ by Ni²⁺, the dielectric properties of the (1− x )(Mg_0.95Ni_0.05)TiO₃− x Ca_0.6La_0.8/3TiO₃ ceramics can be promoted. The microwave dielectric properties are strongly correlated with the sintering temperature and the composition. An excellent Q × f value of 118,000 GHz can be obtained for the system with x =0.9 at 1325°C. For practical application, a dielectric constant (ɛ_r) of 24.61, a Q × f value of 102,000 GHz, and a temperature coefficient of resonant frequency (τ_f) of −3.6 ppm/°C for 0.85(Mg_0.95Ni_0.05)TiO₃−0.15Ca_0.6La_0.8/3TiO₃ at 1325°C are proposed. A parallel-coupled line band-pass filter is designed and simulated using the proposed dielectric to study its performance.     

Low-Temperature Synthesis of ZrC Powder by Cyclic Reaction of Mg in ZrO2–Mg–CH4

We investigated the conditions for low-temperature synthesis of ZrC fine powder from ZrO₂–Mg–CH₄. The synthesis utilizes a thermite-type reaction, with Mg as the reducing agent, and a reaction between Mg and CH₄ gas as a carbon source. The Mg/ZrO₂ molar ratio as well as the heating rate were varied. Because C can be continuously fed into the reaction group by the cyclic reaction of Mg through the formation and decomposition of Mg₂C₃ (2Mg + 3CH₄→ Mg₂C₃+ 6H₂→ 2Mg + 3C), a molar ratio of 2.2 for Mg/ZrO₂ was sufficient for the synthesis of single-phase ZrC. ZrC powders were synthesized under the following conditions: Mg/ZrO₂ molar ratio = 2.2, heating rate = 20°C/min, and temperature maintained at 750°C for 30 min. The amount of reaction heat produced in the reduction reaction of ZrO₂ by Mg depended on the Mg/ZrO₂ molar ratio, specifically, the amount of ZrO₂ contained. Moreover, the cyclic reaction of Mg-Mg₂C₃–Mg was influenced by the amount of reaction heat described above and by the heating rate. The ZrC fine powder showed little aggregation and high dispersibility.     

Thermal Expansion of Y2SiO5 Single Crystals

The thermal expansion of Y₂SiO₅ crystals has been measured for the principal crystallographic directions and two orthogonal directions in the (010) plane in the temperature range 25° to 200°C. This monoclinic crystal has strongly anisotropic expansions with coefficients which range from 0.6 × 10⁻⁶/°C for [100] to 11.4 × 10⁻⁶/°C for [001]. Third-order polynomials have been calculated from the expansion curves. Data for the β angle and cell volume as a function of temperature are also given. The thermal expansion of Y₂SiO₅ crystals is not affected by doping with 5% Tb.     

Characterization of Ca2SiO4:Eu2+ Phosphors Synthesized by Polymeric Precursor Process

The green emitting Ca₂SiO₄:Eu²⁺ (C₂S:Eu) phosphors were synthesized by the polymeric precursor process (Pechini-type), and the effects of calcination temperature and europium (Eu) doping concentration on the luminescent properties were investigated. The crystalline β-C₂S was obtained in the calcination temperature of 1100°–1400°C, and Eu was reduced into Eu²⁺ by annealing in 5% H₂/N₂ atmosphere. The obtained C₂S:Eu²⁺ phosphors exhibited a strong emission at 504 nm under the excitation of λ_exc=350 nm. The highest photoluminescence (PL) intensity was observed in the C₂S:Eu²⁺ phosphors either calcined at 1300°C or doped with 3 mol% Eu. The obtained PL properties were discussed in terms of crystal structure, particle size and shape, surface roughness, and effect of concentration quenching.     

Formation and Microwave Dielectric Properties of the Mg2V2O7 Ceramics

The formation process and microwave dielectric properties of the Mg₂V₂O₇ ceramics were investigated. The MgV₂O₆ phase that was formed at around 450°C interacted with remnant MgO above 590°C to form a homogeneous monoclinic Mg₂V₂O₇ phase. Finally, this monoclinic Mg₂V₂O₇ phase was changed to a triclinic Mg₂V₂O₇ phase for the specimen fired at 800°C. Sintering at 950°C for more than 5 h produced high-density triclinic Mg₂V₂O₇ ceramics. In particular, the Mg₂V₂O₇ ceramics sintered at 950°C for 10 h exhibited the good microwave dielectric properties of ɛ_r=10.5, Q × f =58 275 GHz, and τ_f=−26.9 ppm/°C.