Theory and experiment of high-speed cross-gain modulation insemiconductor lasers

We present theory and experiment for the high-speed modulation response of a quantum-well (QW) laser in the presence of an external microwave modulated optical pump in the gain region. The model includes the effects of pump-induced stimulated recombination and cross-gain saturation. Expressions for the small-signal modulation response of the test laser under gain modulation are derived. We also present experimental results using a multiple-QW InGaAlAs Fabry-Perot (FP) laser at 1.552 μm as the test laser and an external pump by a 1.542 μm DFB laser. Comparison between electrical modulation and optical cross-gain modulation (XGM) of the test laser is also presented, which shows improvement of the modulation bandwidth by optical XGM. Our data show a reduction of carrier lifetime with increasing optical pumping, a shift of the test-laser threshold current, a change in the K factor, and a variation of the relaxation frequency with different pump powers. The experimental results agree very well with the theoretical results     

Dual-band bandpass tunable microwave photonic filter based on stimulated Brillouin scattering

A dual-band bandpass microwave photonic filter(MPF) based on stimulated Brillouin scattering(SBS) is theoretically analyzed and experimentally demonstrated. Two separated tunable laser sources(TLSs) are employed to generate two passbands by implementing phase modulation to amplitude modulation conversion by using SBS induced sideband amplification. The center frequencies of both passbands can be independently tuned ranging from 1 GHz to 19 GHz. High resolution with 3 d B bandwidth less than 30 MHz and large out-of-band rejection about 40 d B under 25 m W optical pump power are achieved.     

35-GHz intrinsic bandwidth for direct modulation in 1.3-/spl mu/m semiconductor lasers subject to strong injection locking

Significant enhancement in modulation bandwidth of semiconductor lasers subject to strong optical injection is experimentally and theoretically studied. At least two folds of improvement is achieved under study. By using an optical probing method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is observed in the injection-locked laser system. The achieved bandwidth approaches the maximum modulation bandwidth set by the K factor for the free-running laser. Discussions are presented for an even larger modulation bandwidth using the injection-locking technique.     

1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth

The emission wavelength of a GaInNAs quantum well (QW) laser was adjusted to 1310 nm, the zero dispersion wavelength of optical fibre, by an appropriate choice of QW composition and thickness and N concentration in the barriers. A triple QW design was employed to enable the use of a short cavity with a small photon lifetime while having sufficient differential gain for a large modulation bandwidth. High speed, ridge waveguide lasers fabricated from high quality material grown by molecular beam epitaxy exhibited a damped modulation response with a bandwidth of 13 GHz.     

Single-wavelength operation of 1.53 ?m GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector under direct modulation up to 1 GHz

1.53 ?m GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector (BH-DBR-ITG laser) was directly modulated with microwave modulation current superimposed on a DC bias which was fixed at 1.1 times the threshold current, and single-wavelength operation was experimentally confirmed with a modulation frequency up to 1 GHz and a modulation depth of 100%.     

11.2 GHz picosecond optical pulse generation in gain-switched short-cavity InGaAsP injection lasers by high-frequency direct modulation

We report the generation of high-speed optical pulses in gain-switched short-cavity InGaAsP injection lasers by high-frequency direct modulation. Short pulses (25 ps) with high on/off ratio were obtained at 11.2 GHz from a short-cavity double-channel planar buried-heterostructure (DCPBH) InGaAsP semiconductor laser biased at three times the threshold current. This is the first report of direct modulation above 10 GHz for InGaAsP lasers.     

垂直腔面发射激光器的内调制特性

面向芯片原子钟(Chip Scale Atomic Clock,CSAC)的垂直腔面发射激光器(Vertical Cavity Surface-Emitting Laser,VCSEL)通过微波调制产生具有特定光频差的相干激光,与原子作用后的跃迁谱线频率作为参考标准,最终可获取高精度的频率信号。因此,垂直腔面发射激光器在芯片原子钟系统中至关重要。介绍了VCSEL激光器的内调制原理,搭建了其内调制特性实验测试平台,开展了激光器对射频调制响应特性研究,记录了激光器边带信号随着注入电流和射频输出功率的变化情况,并分析了射频调制对激光器边带信号的影响特性以及Bogatov现象引起的边带不对称现象。实验结果显示:当射频信号频率为3.41734 GHz,注入电流为1.2 mA,射频输出功率为3.5 dBm时,可获得优化的高频调制光谱,为芯片原子钟提供优质的光源。     

Bandwidth enhancement of injection-locked 1.3 μm quantum-dot DFB laser

Optical injection locking of a quantum-dot distributed-feedback laser at 1.3 mum is reported. Using an injection ratio of 5.3 dB, an optical detuning of -40 pm, and a slave laser biased at 20 mA, the modulation bandwidth of the injection-locked laser was 16.3 GHz. This is over four times higher than the modulation bandwidth of the free-running quantum-dot laser. At a slave laser bias of 5.0 mA, injection locking resulted in a resonance frequency of 21.9 GHz, over eleven times higher than the relaxation frequency of the free-running slave laser.     

Modulation Bandwidth Enhancement in Optical Injection-Locked Semiconductor Ring Laser

The modulation bandwidth of a optical injection-locked (OIL) master–slave configuration using a semiconductor ring laser (SRL) as the slave laser is investigated. The modulation bandwidth depends on the detuning frequency, input optical power into the slave SRL, and the bias current to the SRL in the master–slave configuration. Modulation bandwidth of $> $40 GHz has been achieved when modulating the master laser, in contrast to the 15-GHz modulation bandwidth of the free-running SRL. The unidirectional operation of the SRL as a slave laser allows monolithic integration of such OIL scheme as it produces little feedback to the master laser.      

Integrated laser-diode voltage driver for 20-Gb/s optical systemsusing 0.3-μm gate length quantum-well HEMT's

An integrated laser-diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs-GaAs quantum-well high electron mobility transistors (QW HEMTs) with gate lengths of 0.3 μm has been developed. Its large signal bandwidth is 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gb/s show an opening similar to that of the input signal. Supporting material is given indicating that the LDVD might operate at bit rates up to 20 Gb/s. The maximum output current is over 90 mA; the maximum modulation voltage of 800 mV corresponds to 40-mA modulation current for a laser diode with 20-Ω dynamic resistance. The power consumption is less than 500 mW     

1.06μm注入锁定增益开关半导体激光器特性分析与功率放大研究

报道了1.06 m增益开关半导体激光器的详细特性分析和功率放大研究。用高频正弦信号调制中心波长1.06 m的F-P腔半导体激光器得到脉宽约为100 ps、平均功率约为20 mW,重频从500 MHz到2 GHz连续可调的稳定短脉冲激光输出。采用注入锁定改善增益开关半导体激光器的输出特性。研究和分析了调制信号的频率、功率和偏置电流的大小以及注入锁定的功率、温度对激光器输出特性的影响。将该激光器作为种子,用108 W的抽运光进行两级全光纤功率放大得到了82 W的高功率输出,光光转换效率达到76%。     

Noise properties of semiconductor lasers due to optical feedback

It has been recognized for some time that reflections back into the cavity of an injection laser from a mechanically unstable external mirror cause noise in the output of the laser (reflection noise). In this paper, noise measurements are presented for index-guided lasers as functions of the output power, the degree of optical isolation and external cavity length (5-15 cm), while current modulation (using 2-4 mA at 50-200 MHz) has been used to reduce the noise levels by as much as 20 dB. It is demonstrated that the mechanism of noise reduction by modulation is the frequency modulation of the laser's spectrum and its interaction with the modes of the external cavity. It is shown that using an optical isolator can give a relative intensity noise of -110 dB while using modulation in addition can reduce this to -125 dB; the bandwidth performance of optical storage systems is discussed in terms of these two schemes.     

1.3μm wide bandwidth semiconductor laser module

We have fabricated high speed 1.3цm InGaAsP/InP laser module with a CW 3-dB modulation bandwidth of 4 GHz under direct modulation and a threshold current less than 40 mA at room temperature.In this paper ,the design,fabrication techniques and microwave package of module are descuibed in detail,and the microwave and optoelectronic performances are discussed.     

高非线性光纤中受激布里渊散射的抑制和光参量放大

受激布里渊散射 (SBS)的抑制是实现光纤参量放大的重要技术要求 ,已有文献报道多采用对抽运光进行相位调制的方法 ,将光功率分散到多个频率分量上来达到这一目的。提出一种二次调相的方法 ,在已有 2GHz相位调制的商品光源上施加 36 5MHz的二次相位调制 ,将高非线性光纤 (HNLF)的受激布里渊散射阈值由未加任何调制时的 10dBm至少提高到 2 3 5dBm ,达到了参量放大的要求。在此基础上 ,进行了连续波 (CW )抽运的光纤参量放大实验。实验中采用长度为 14 5 0m ,非线性系数γ =11 9W-1km-1,色散斜率S =0 0 15 5ps/(nm2 ·km)的高非线性光纤 ,使用外腔可调谐激光器 (ECL)作为信号光源 ,小信号增益带宽达到 2 6nm(增益 >10dB) ,峰值增益达到2 4dB。同时还观察到了由于非线性拉曼放大作用造成的长波长信号光增益大于短波长信号光增益的不对称性。     

Direct Modulation Characteristics of Composite Resonator Vertical-Cavity Lasers

We report the small-signal modulation characteristics of a monolithic dual resonator vertical cavity surface emitting laser. The modulation response is described by a system of rate equations with two independent carrier populations and a single longitudinal optical mode. The independent optical overlaps and differential gains of the two active regions can each be adjusted to maximize the output response. We show that under certain conditions, the composite resonator may achieve a higher bandwidth than a single cavity laser with the same photon density. We find the relaxation oscillation frequency to depend mainly on the total photon density and not the individual currents in the two cavities. With appropriate current injection, the composite resonator laser achieves a maximum -3-dB bandwidth of 12.5 GHz and a maximum modulation current efficiency factor of approximately 5GHz/ma^1/2      

Submillimeter wave generation through optical four-wave mixingusing injection-locked semiconductor lasers

This paper presents a comprehensive analysis of submillimeter wave generation through optical four-wave mixing (FWM) in an injection-locked semiconductor laser. The probe wave introduces pump-probe difference frequency amplitude modulation (AM) and phase modulation (PM) of the slave laser injection locked to the pump wave. The AM and PM indexes of the locked laser output lightwave modulated at the submillimeter wave frequency have been calculated. The submillimeter wave power generated through this technique has also been calculated theoretically. The analysis predicts a submillimeter wave power of -3.7 dBm at 300-GHz frequency for a free-running slave laser output power of 30 mW. In the presence of amplitude modulation of the probe wave, the same modulation is transferred to the submillimeter wave. The suppression of output lightwave amplitude noise relative to the pump, probe, or free-running slave laser amplitude noise has also been estimated in this analysis. At a submillimeter wave frequency of 300 GHz and a probe power equal to the pump power, typical amplitude noise reduction occurs by 7 dB     

Scalable high-power, high-speed CW VCSEL arrays

A demonstration of a high-power, high-speed 980 nm vertical-cavity surface-emitting laser array with continuous-wave power of greater than 120 mW and frequency response over 7.5 GHz at room temperature is reported. Experimental results show that copper plating the array elements and flip-chip bonding provides effective thermal management as well as offering uniform current distribution at microwave frequencies. This is verified by the radial dependence of modulation bandwidth. These arrays may be useful for short-range light detection and ranging or free-space optical communications systems.     

光栅外腔提高VCSEL微波调制效率实验研究

实验研究了垂直腔面发射激光器(vertical cavity surface emitting laser,VCSEL)在闪耀 光栅作为外腔反馈时的直流和微波调制特性。VCSEL底部端面和外部闪耀光栅组成法布里- 珀罗(Fabry-Perot,FP)腔,由于闪耀光栅的反馈作用,可以提高VCSEL微波调制效率。在VCSEL仅有直流 电流驱动时,实验观察到了频率与FP腔长有关的边带功率,调节FP腔长,使FP腔谐振频率与 微波调制频率耦合,可在相同微波功率下得到2倍的有效边带功率。研究结果表明,闪耀光 栅外腔VCSEL可以在较宽的输入较小微波功率范围内得到较高的有效边带功率。本文研究将 为微波调制VCSEL及其他半导体激光器应用提供一定的参考意义。     

Butt-Joint Monolithically Integrated DFB-LD/EA-MD Light Source for 10Gbit/s Transmission

This paper reports on the design,fabrication，and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is to improve the optical coupling between the laser and modulator;another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator.The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA.Output power at 100mA is more than 10mW.The extinction characteristics,modulation bandwidth,and electrical return loss are measured.3dB bandwidth more than 10GHz is monitored.     

Optical phase-locked loop with fibre lasers for low phase noise millimetre-wave signal generation

An optical phase-locked loop (OPLL) using two continuous-wave commercial fibre lasers was implemented by means of pump power modulation. Although the 3 dB bandwidth of the frequency modulation transfer function of a fibre laser was measured to be approximately 6 kHz, the control bandwidth of the loop was extended by a factor of 10 using electronic phase-lead compensation. The operation of our OPLL was stable with a residual RMS phase fluctuation of 57 mrad. By using this technique, the photonic generation of millimetre-wave signals up to 64 GHz was successfully demonstrated.