移动智能网业务的设计分析

本文分析了固定网和移动网智能业务在触发方式、编号方案、业务流程等方面的差异，对移动智能业务的设计实现进行了详细的论述，探讨了在ＧＳＭ网络上提供移动智能业务的新的设计思路。     

移动智能网业务的设计分析

本分析了因多和移动网智能业务在触发方式、编号方案、煤务流程等方面的差异，对移动智能业务的设计实现进行了详细的论述，探讨了在ＣＳＭ网络上提供移动智能业务的新的设计思路。     

中国电信智能提速IT支撑技术架构探讨

1智能提速IT支撑方案和思路 为了智能提速业务的开展,中国电信的BOSS需要从业务受理、开通、保障、用户自主提速管理、业务计费等多个方面进行支撑.根据智能前向整体提速的业务特点,智能提速业务的主要IT支撑需求如下. 业务受理开通:需要获得用户最大可用带宽、实际可达速率、用户宽带速率等数据作为受理依据;可以通过CRM,受理、开通、变更、退订智能提速业务;可以通过网上营业厅/掌上营业厅等用户门户,受理、开通、变更、退订智能提速业务. 业务使用及保障:需要提供用户自主提速操作的门户,提供SP后向提速业务的系统接口;需要提供用户上线/下线等提速策略的触发能力;需要提供用户提速记录,作为计费依据;对业务故障引起的报障、投诉能够准确定位、处理.     

移动智能网系统及其在我国的发展

与移动网的结合是智能网研究的新方向。ＥＴＳＩ提出的ＣＡＭＥＬ方案用来在ＧＳＭ网络中提供智能业务。北京邮电大学程控交换与通信网国家重点实验室在其已成功应用的固定智能网ＣＩＮ０２系统的基础上,参照ＣＡＭＥＬ方案推出了ＣＭＩＮ０２移动智能网系统。现在该系统可提供预付费业务、移动虚拟专用网业务和通用接入码业务。     

彩铃业务及其在移动网的实现方式

本文对现阶段移动网中各种实现彩铃业务的技术方案做了较为系统的总结和利弊对比,并结合移动网的特性提出了较好地实现彩铃业务的方案.     

基于中国电信普及版视频监控系统的智能家庭方案探讨

本文对提出的一种基于中国电信普及版视频监控系统的智慧家庭方案进行了探讨.本方案扩展了普及版视频监控系统的会话初始化协议(SIP)控制协议,在已有高速视频监控信道基础上加入其他系统数据低速通道,和后台计算机智能信息处理模块,实现了智能家居等诸多业务.该方案是发挥中国电信固有优势,充分利用全业务运营的契机,实现中国电信从传统网络运营向现代综合信息服务提供商转变,从互联网的领跑者到物联网的领跑者的一个有益尝试.     

中国电信承接CDMA后的运营策略

电信重组已经开始,根据重组计划,中国电信将承接联通的CDMA网络,由此变成具有固网和移动网的全业务综合运营商.这次重组.对中国电信来说,无疑是最大的赢家.因为无论从人员结构调整和设备的承接来说,中国电信都是利大于弊.特别是向3G过渡,CDMA向CDMA2000过渡最容易且花费最低.     

中国电信将介入移动市场

据业内权威人士透露,中国电信将可能在今年年底进入移动市场,正式运营移动网。 目前我国只有中国移动通信集团公司和中国联通公司经营移动业务,而前景看好且发展迅速的中国移动市场显然还需要新的移动运营商进入。中国电信在经过１９９９年的业务重组之后,正在寻找新的业务增长点,进入移动市场是迟早的事。有关人士估计,如果中国电信能在２０００年底正式运营移动网,根据全国移动用户的发展趋势,到２００５年中国电信将拥有４０００万用户。 记者就此向中国电信总局证实时,电信总局有关人士表示,中国电信有这方面的考虑,但何时进入移动市场还有待于信息产业部的批准。 中国电信可能会以无线市话为起点,充分利用现有人力、传输、交换等资源切入移动市场。中国电信将介入移动市场@刘启诚     

动态

发展物联网离不开互联网、移动网等通信网络11月24日,中国电信宣布在江苏无锡建立物联网应用和推广中心、中国电信物联网技术重点实验室。中国电信总经理王晓初、副总经理孙康敏出席了揭牌仪式。王晓初在演     

中国电信物联网驶入快车道与产业链打造向心力生态圈

随着全球新一轮物联网热潮的兴起,物联网在各个领域的应用蓬勃发展,物联网芯片、模块、终端、通道、平台、云计算和大数据等各项关键技术快速演进,产业链上各类企业的创新、创业不断涌现. 中国电信对于物联网的发展早已开始重点布局,在“2016年天翼智能终端交易博览会”上,中国电信对物联网的发展策略做了进一步的阐述,中国电信副总经理高同庆指出,物联网作为中国电信五大新型重点业务之一,在智能时代,市场潜力巨大.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and sub-pixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.