Ⅲ族锢源对LP－MOVPE方法生长In_（1－x）Ga_xAs材料的影响

本文报道了利用低压金属有机物汽相外延（ＬＰ－ＭＯＶＰＥ）技术，在（００１）ＩｎＰ衬底上生长Ｉｎ_（１－ｘ）Ｇａ_ｘＡｓ体材料及Ｉｎ_（１－ｘ）Ｇａ_ｘＡｓ／ＩｎＰ量子阶结构材料的结果．对于ＴＭＧ／ＴＥＩｎ源，Ｉｎ_（１－ｘ）Ｇａ_ｘＡｓ材料的非故意掺杂载流子依匿为７．２×１０１６ｃｍ－３，最窄光致发光峰值半宽为１８．９ｍｅＶ，转靶Ｘ光衍射仪对量子阶结构材料测到±２级卫星峰；而对于ＴＭＧ／ＴＭＩｎ源，非故意掺杂载流于浓度为３．１×１０￣１５ｃｍ￣（－３），最窄光致发光峰值半宽为８．９ｍｅＶ，转靶Ｘ光衍射仪对量子阶     

低阈值1.3μmMQW激光器

利用叔丁砷化氢（ＴＢＡ）和叔丁磷化氢（ＴＢＰ）的ＭＯＶＰＥ已制成低阈值１．３μｍ的ＩｎＧａＡｓＰ多量子阱（ＭＱＷ）激光器。实验证明：与用常规的氢化物ＨｓＨ３和ＰＨ３生长的四元ＩｎＧａＡｓＰ材料相比，用ＴＢＡ和ＴＢＰ进行的四元材料生长可改善Ｖ族组分的可控性。从而使２英寸的ＩｎＧａＡｓＰ ＭＱＷ晶片的光致发光（ＰＬ）波长具有极好的均匀性，其标准偏差仅２．６ｎｍ，４．２Ｋ时，ＰＬ的最大半值全宽（ＦＷＨＭ     

Nd：MgO：LiNbO_3光波导的特性

用质子交换法制备了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３波导。通过测量平面波导的二次离子质谱，得到了波导的原子组分分布，并测量了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３晶体的吸收谱线，最后利用端面耦合，分别得到了条波导内和衬底内激光诱导的荧光谱线。     

InGaAsP的折射率色散及其波导的单膜尺寸

理论分析了红外光波导开关中波导层Ｉｎ_（１－ｘ）Ｇａ_ｘＡｓ_ｙＰ_（１－ｙ）的折射率色散，对波长为１．３μｍ的激光，当ｙ＝０．４０，ｘ＝０．１８时，波导层的折射率为３．３８；当ｙ＝０．００，ｘ＝１．００时，其折射率为３．２１。数值计算得到矩形加载波导的单膜尺寸范围，为光波导开关的设计与制作提供了参考数据。     

Mg：Fe：LinbO_3晶体光折变增强效应的研究

在铌酸锂晶体中掺ＭｇＯ和Ｆｅ２Ｏ３，生长出Ｍｇ：Ｆｅ：ＬｉＮｂＯ３晶体．由于薄晶片的光爬行效应，晶体的二波耦合指数增益系数高达８０ｃｍ－１，且角度响应范围加宽，响应速度和抗光散射能力都比Ｆｅ：ＬｉＮｂＯ３有较大改善．以Ｍｇ：Ｆｅ：ＬｉＮｂＯ３晶体作光放大器，实现了一次迭代全息关联存储．     

激光晶体Nd：ZnO：LiNbO_3的生长及其光学性能

在ＬｉＮｂＯ３中同时掺入Ｎｄ２Ｏ３和ＺｎＯ，生长了Ｎｄ：ＺｎＯ：ＬｉＮｂＯ３晶体。它具有同Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３晶体相当的抗光损伤能力。Ｚｎ２＋离子的掺入，不影响Ｎｄ３＋离子在晶体中的光谱性质。可成为新型激光晶体。     

共沉淀法制备Ba(Mg_(1/3)Ta_(2/3))O_3陶瓷的研究

对用化学共沉淀法制备Ｂａ （Ｍｇ１／３Ｔａ２／３） Ｏ３ （ＢＭＴ） 陶瓷及其烧结特性进行了研究。结果表明其烧结温度比用传统方法降低了１８０～２５０℃。在１ ４００℃时获得了致密的陶瓷,其体积密度达理论密度的９６％ ,晶粒排列紧密,介电特性：Ｑ×ｆ＝ ６５ ０００ ＧＨｚ,εｒ＝ ２３～２５,在ｆ＝ １０ＧＨｚ,ｔ＝ － ２０～＋ ６０℃时τｆ ＝ （０～３）×１０－ ６℃－ １。     

InGaAsP及其量子阱结构的LP－MOCVD

报道了用低压金属有机化学汽相淀积（ＬＰ－ＭＯＣＶＤ）技术在（１００）ＩｎＰ衬底上生长ＩｎＧａＡｓＰ体材料及ＩｎＧａＡｓＰ（１．３μｍ）／ＩｎＧａＡｓＰ（１．６μｍ）量子阱结构的生长条件和实验结果。比较了５５０℃和５８０℃两个生长温度下Ｉｎ１－ｘＧａｘＡｓｙＰ１－ｙ体材料及相应量子阱结构的特性，表明在５８０℃生长条件下，晶体具有更好的质量和特性。     

LiTaO3晶体的生长及其光学性能的研究

采用硅钼棒作加热体，用提拉法生长ＬｉＴａＯ＿３晶体。测试了晶体的光折变阈值、双折射梯度和消光比。用ＬｉＴａＯ＿３晶体制成光波导基片，全息法研究光波导基片的光折变性能，取得良好的结果。     

Nd：MgO：LiNbO3和Er：LiNbO3波导激光器的阈值泵浦功率和斜效率的理论研究

本文从速率方程出发，考虑了泵浦光和激光模式的空间分布分别推导了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３和钛扩散Ｅｒ：ＬｉＮｂＯ３波导激光器的阈值泵浦功率和斜率效率的一般表达式。     

Careers: Survivor: The Office

Each of us must contend with office politics, because human beings are political animals, and we form alliances, negotiate deals, demand tribute, and wreak revenge. This paper discusses short list of political do's and don'ts.     

The electronic and magnetic properties of wurtzite Mn∶CdS,Cr∶CdS and Mn∶Cr∶CdS∶ first principles calculations

In this article, density functional theory (DFT) based on generalized gradient approximation (GGA) and GGA+U, U is Hubbard term, is used to study the electronic properties of CdS doped with different dopants (Cr, Mn). The calculations are carried out for Mn-doped CdS, Cr-doped CdS, and co-doping of Mn/Cr in CdS simultaneously. It is found that hopping of electrons is possible with Cr:CdS and Mn:Cr:CdS while Mn:CdS does not allow the hopping of electrons. Moreover, double exchange interactions are observed in Cr:CdS and d-d super-exchange interactions are observed in Mn:CdS. Now the problem becomes interesting when one magnetic ion (Cr) supporting double exchange interactions and another ion (Mn) supporting d-d super-exchange interactions are doped simultaneously in the same system (CdS). The co-doped CdS is more stable even at high Curie temperature due to p-d double exchange interactions and d-d super exchange interactions. Furthermore, the Cr-3d and Mn-3d states present in-between the band gap are responsible for inner shell transitions and hence for optical properties. Therefore, the co-doped system is taken into account to enhance its applications in the field of spintronic and magneto-optical devices.     

SCTS:: scanning capacitance transient spectroscopy

A new working mode of scanning capacitance microscopy (SCM) is presented, extending the possibilities of the measurement from lock-in amplitude mapping to recording of capacitance transients arising as response of abrupt bias changes. Effect of Au doping in Si on SCM and scanning capacitance transient spectroscopy (SCTS) was observed. The decay time of capacitance transient, measured locally on slightly doped region shows good agreement with the conventional DLTS results.