SBN:Ce光致折变晶体及其应用的实验研究

本文对SBN:Ce晶体特性进行了实验研究,该晶体可在低功率激光下使用.并给出SBN:Ce在单根多模光纤中实现传输图像的实验结果.     

光致折变Taper光纤耦合器的耦合波分析

研究利用光纤中光致折变效应研制的光纤波导折射率沿轴向渐变的Ｔａｐｅｒ器件的模式耦合特性．在标量场近似下，用本地模表示的方法分析在阶梯折射率分布光纤和平方律折射率光纤的轴向折射率渐变过渡结构中传输的基模向反向散射模和高价模的耦合。对阶梯折射李光纤两种不同折射率Ｔａｒｅｒ结构的数值计算结果表明：在折射率变化相对缓慢情况下，这种折射率Ｔａｐｅｒ耦合器的基模反向散射和向高阶模的耦合都很小；基模能够自适应地调节以适应波导折射率的渐变，具有优良的传输性能．     

光纤布喇格光栅的制作技术

简单介绍了光纤布喇格光栅（ Ｆ Ｂ Ｇ） 的原理及光学特性,详细阐述了 Ｆ Ｂ Ｇ 的制作技术。此外,详细地描述了采用 Ｋｒ Ｆ 激光器,利用位相掩模法光刻光纤形成 Ｆ Ｂ Ｇ 的实验。此种方法与其他方法相比,有很多的优点。给出和分析了实验的结果     

旋转折变型长周期光纤光栅实现应变和温度的同时测量

提出一种基于旋转折变型长周期光纤光栅(R-LPFG)实现应变和温度同时测量的新方法.旋转折变型长周期光纤光栅是利用高频CO2激光在扭曲的普通单模通信光纤上制作的.这种特殊折变结构实现了纤芯基模与非对称包层模L1k奇模和偶模的同时耦合,从而导致R-LPFG的谐振峰发生分裂.通过对这种光栅的应变和温度特性进行实验研究发现,当对它施加轴向应力时,其传输谱的两个谐振峰会向不同方向漂移;而当外界温度改变时,两个峰则会向同一方向漂移且波长漂移灵敏度几乎相同,大约为0.07 nm/℃.     

用于电光学和光折变的有机聚合物的设计与合成

激光束之类强光可使非线性光学材料的光学性质发生变化，这种变化转而又影响光束通过这种材料时的光束特性。研究光与物质相互作用是非线性光学的课题，这种研究也包括二次谐波产生之类值得注意的效应。比如把红外激光脉冲（1064um波长）聚焦到磷酸二氢钾晶体，可以产生二次谐波（532um波长）的绿光脉冲。更一般地说，可用材料的非线性光学特性来控制相位、偏振态或光束的频率，它们还可用来存储和恢复信息或使光束偏转，使之在光纤信道之间传输光信息。随着通信等领域中光子技术的涌现（这里信息都进行编码和以光学方式输送或传输），对高…     

LiNbO3：Fe晶体用作光折变实时光学相关器的研制

首次用ＬｉＮｂＯ３：Ｆｅ晶体薄片作为匹配滤波器代替传统的光学盯关器中的全息干板，成功地研制成实时光学相关器，在此光折变晶体中写人全息光栅的时间只需几秒－几分种，因而与传统的光学相关器的相比较，它具有快速，实时，简便及定位可靠等优点，用此器件实现了相关运算，卷积运算，特征字符识别等。     

Ce∶KNSBN光折变光纤两波耦合特性研究

研究了掺铈钾钠铌酸锶钡 (Ce∶KNSBN)光折变光纤“扇”特性及两波耦合的基本特性。通过实验发现 ,当入射光的入射角为 8°左右时 ,“扇”最小 ,这与块状晶体有根本的不同。在信号光与抽运光的入射夹角 2θ小于 11°时 ,两波耦合增益随入射夹角的增大而增大 ,而当入射夹角大于 11°时 ,两波耦合增益随着入射夹角的增大而迅速减小。给出了在各个不同的入射夹角下 ,两波耦合增益中透射的信号光的时间特性曲线。两波耦合增益随信号 抽运比的增加而增加 ,在入射夹角为 8° ,信号 抽运比为 1∶10 0 0时 ,两波耦合增益达到了 77,比块状晶体相应条件下提高了 4倍。用两波耦合的理论公式对增益随信号 抽运比的实验数据进行了拟合 ,二者相符     

Ce:KNSBN光折变光纤两波耦合特性研究

研究了掺铈钾钠铌酸锶钡(Ce:KNSBN)光折变光纤"扇"特性及两波耦合的基本特性.通过实验发现,当入射光的入射角为8°左右时,"扇"最小,这与块状晶体有根本的不同.在信号光与抽运光的入射夹角2θ小于11°时,两波耦合增益随入射夹角的增大而增大,而当入射夹角大于11°时,两波耦合增益随着入射夹角的增大而迅速减小.给出了在各个不同的入射夹角下,两波耦合增益中透射的信号光的时间特性曲线.两波耦合增益随信号-抽运比的增加而增加,在入射夹角为8°,信号-抽运比为1:1000时,两波耦合增益达到了77,比块状晶体相应条件下提高了4倍.用两波耦合的理论公式对增益随信号-抽运比的实验数据进行了拟合,二者相符.     

采用光折变全息干涉计量术对光楔特性的测量

光折变晶体是一种新型的记录材料,应用光折变效应,不需显影、定影等处理,就可实现实时观测。文章探讨了光折变实时全息干涉法在光学检测中的应用,提出同时确定光楔楔角和折射率的新方法,从而改变了只有光楔的折射率和楔角中一个已知时才可测量另一个未知量的传统测量方法。介绍了实验过程,分析得出了最后实验结果。     

光场偏振函数是量子力学的几率波

在运用光流线量子理论处理光在介质中传播模式的基础上，得出光场偏振函数量子化的结论。     

聚合物光折变的研究进展

近几年来, 人们在聚合物中观察到了光折变效应。与无机材料相比, 聚全物材料具有较大的电光响应、高的破坏阚值和低的介电常数, 并且容易加工成形。所以它显示出光明的应用前景。本文描述了聚合物光折变的研究方法, 并综述了迄今为止已经报道的理论和实验研究结果。     

KNbO3：Fe的红外光折变效应

利用1.15μm He-Ne激光对光折变晶体KNbO_3:Fe的二波耦合实验测量,得到二波耦合增益系数为1.4cm~(-1),频率响应时间为5ms.在红外波段的初步实验结果与可见波段的规律相符.     

KNbO3：Fe环形腔被动相位共轭器

介绍有附加反射镜组成的KNbO_3:Fe环形腔自泵相位共轭器,实验演示了相位共轭光建立过程中各光束间的能量转移现象,并测得自泵相位共轭反射率R随入射角α、环形腔光束夹角2θ和入射光强I_4的依赖关系,在最佳条件α=23°和2θ=20°时,测得最大的相位共轭反射率R=36%。     

σ-π共轭聚合物光折变特征研究

合成一种σ π共轭聚合物 poly(disilanylene 2 ,2′ bipyridine 5 ,5′ diyl)ruthenium (PDSBpy Ru) ,双光束耦合(2BC)、四波混频 (DFWM)及场致双折射实验等证明了该有机物的光导及光折变特性。由于铷化合物的金属与配位体间 (MLCT)电荷转移特性 ,使得该聚合物的光折变特性得以增强。实验测得双光束耦合增益系数为 30cm-1 ,四波混频实验测得光栅衍射率约为 1 0 %。     

Evaluation of InP:Fe parameters by measurement of two wave mixing photorefractive and absorptive gain

In this paper, we present two-wave mixing absorption gain measurements in InP:Fe in the 960–1035 nm wavelength range. The measured absorption gain is shown to be positive for long wavelength but changes sign for shorter wavelength. By simultaneously measuring the photorefractive gain and the absorption gain, we deduce the values of the photo-ionization cross sections related to the iron deep level trap. Finally, the study of the temperature dependence of the absorption gain allows us to evaluate a temperature shift of the iron level with respect to the conduction band of −4×10⁻⁴ eV/K.     

Enhanced Photorefractivity of Poly(N‐vinylcarbazole)‐Based Composites through Electric‐Field Treatments and Ionic Liquid Doping

It is shown that the photorefractive (PR) performance of polymer composites based on poly(N‐vinylcarbazole) can be improved when samples are subjected to an electric field for a certain time, i.e. conditioned, previous to the PR characterization. It is also found that for conditioned samples the addition of an organic ionic liquid to the PR composition allows to obtain PR effect without the need of using a sensitizer. The typical electric field treatment time at room temperature and at a field of 20 V µm^?1 is 20 min. This procedure leads to a decrease of dark conductivity and an increase of photoconductivity, and consequently an increase of conductivity contrast. This results in higher PR two‐beam‐coupling gain coefficients and shorter response times, particularly at low fields. Dependencies of the process dynamics on impurities, applied field strength, temperature and the presence of an organic ionic liquid are examined in detail. It is remarkable the significant increase of the PR gain coefficients, and more drastically of the net gain coefficients, observed at low fields (<55 V µm^?1), when an ionic organic liquid such as benzalkonium chloride is added to unsensitized conditioned PR composites. These findings open a new route to improve the PR performance, not only of PVK‐based composites, but also of other types of organic materials, the main advantage being that no sensitizer is needed.     

Study of CdSSe:V and CdMnTe:V photorefractive effect

A large photorefractive effect was measured in CdS_0.8Se_0.2:V and Cd_0.55Mn_0.45Te:V ternary crystals which shows promise for many device applications such as optical signal processing and optical limiting. In this study, we compared the results obtained from two-wave mixing experiments with Cd_0.55Mn_0.45Te:V and CdS_0.8Se_0.2:V crystals at the 633 nm wavelength. As the signal to pump beam ratio was varied from 10⁻¹ to 10⁻⁴, Cd_0.55MN_0.45Te:V and CdS_0.8Se_0.2:V showed a maximum photorefractive gain of 0.17 and 0.20 cm⁻¹, respectively. The grating formation time of both the crystals were measured to be in the milli-second range at an incident intensity of 200 mW/cm².     

G.654光纤连接熔纤损耗分析

针对G.654光纤连接熔纤损耗值无数据参考的问题,首先分析了G.654光纤连接熔纤测试损耗值,然后与G.654光纤连接熔纤损耗的理论分析数据进行对比,同时结合光纤熔接机型号,最后给出G.654光纤连接自身熔纤损耗值和G.652光纤与G.654光纤连接混接熔纤损耗值。     

光纤偏振控制器的原理、结构及特点分析

光纤偏振器具有抗干扰能力强，插入损耗小，易与光纤系统连接等优点，在光纤相干通信系统．以及光纤相干传感系统中受到重视。文中系统地讨论了电磁挤压型、可旋转光纤线圈型、可旋转光纤曲柄型、法拉第旋转器型、线性双折射光纤型，以及改进型和保偏光纤伸展型等光纤偏振器的工作原理和结构，分析了它们的特点，为新型光纤偏振控制器的设计提供了参考。     

Development of Fiber Lasers and Their Applications

1 Introduction Fiber lasers have been developed for more than forty years since Snitzer!s proposal and the demonstration of Nd- doped fiber in 1961 [1]. But fiber lasers have not been attracted considerable attention until the develop- ment of the low- loss fiber fabrication technology and the high power semiconductor laser technology recently. Actually,it is the application and development of fiber communication technology that has promoted the rapid development of fiber laser. Fiber laser, …