A 2.4 GHz low power wireless transceiver analog front-end for endoscopy capsule system

This work presents the design and implementation of a 2.4 GHz low power wireless transceiver analog front-end for the endoscopy capsule system in 0.25 μm CMOS. The prototype integrates a low-IF receiver analog front-end (low noise amplifier, double-balanced down-converter, band-pass-filtered AGC loop, and ASK demodulator) and a direct-conversion transmitter analog front-end (20 MHz IF PLL with well-defined amplitude control circuit, ASK modulator, up-converter, and output buffer) on a single chip together with one integrated RF oscillator and two LO buffers. Trade-off has been made over the design boundaries of the different building blocks to optimize the overall system performance. All building blocks feature the circuit topologies that enable comfortable operation at low power consumption. As a result, the IC works at a 2.5 V power supply, while only consuming 15 mW in receiver (RX) mode and 14 mW in transmitter (TX) mode. To build a complete transceiver for the endoscopy capsule system, only an antenna, a duplexer, and a digital controller are needed besides the presented analog front-end chip.     

Low-power transceiver analog front-end circuits for bidirectional high data rate wireless telemetry in medical endoscopy applications

State-of-the-art endoscopy systems require electronics allowing for real-time, bidirectional data transfer. Proposed are 2.4-GHz low-power transceiver analog front-end circuits for bidirectional high data rate wireless telemetry in medical endoscopy applications. The prototype integrates a low-IF receiver analog front-end [low noise amplifier (LNA), double balanced down-converter, bandpass-filtered automatic gain controlled (AGC) loop and amplitude-shift keying (ASK) demodulator], and a direct up-conversion transmitter analog front-end [20-MHz IF phase-locked loop (PLL) with well-defined amplitude control circuit, ASK modulator, up-converter, and power amplifier] on a single chip together with an internal radio frequency oscillator and local oscillating (LO) buffers. Design tradeoffs have been made over the boundaries of the different building blocks to optimize the overall system performance. All building blocks feature circuit topologies that enable comfortable operation at low power consumption. The circuits have been implemented in a 0.25-microm CMOS process. The measured sensitivity of the receiver analog front-end is -70 dBm with a data rate of 256 kbps, and the measured output power of the transmitter analog front-end could achieve -23 dBm with a data rate of 1 Mbps. The integrated circuit consumes a current of 6 mA in receiver mode and 5.6 mA in transmitter mode with a power supply of 2.5 V. This paper shows the feasibility of achieving the analog performance required by the wireless endoscopy capsule system in 0.25 microm CMOS.     

A 3.1 to 5 GHz CMOS Transceiver for DS‐UWB Systems

This paper presents a direct‐conversion CMOS transceiver for fully digital DS‐UWB systems. The transceiver includes all of the radio building blocks, such as a T/R switch, a low noise amplifier, an I/Q demodulator, a low pass filter, a variable gain amplifier as a receiver, the same receiver blocks as a transmitter including a phase‐locked loop (PLL), and a voltage controlled oscillator (VCO). A single‐ended‐to‐differential converter is implemented in the down‐conversion mixer and a differential‐to‐single‐ended converter is implemented in the driver amplifier stage. The chip is fabricated on a 9.0 mm² die using standard 0.18 µm CMOS technology and a 64‐pin MicroLead Frame package. Experimental results show the total current consumption is 143 mA including the PLL and VCO. The chip has a 3.5 dB receiver gain flatness at the 660 MHz bandwidth. These results indicate that the architecture and circuits are adaptable to the implementation of a wideband, low‐power, and high‐speed wireless personal area network.     

An ISDN echo-cancelling transceiver chip set for 2B1Q coded U-interface

A three-chip set for a 2B1Q U-interface transceiver has been developed. The chip set is composed of an analog front-end (AFE), echo-canceller (EC), and receiver (RCV) LSIs. The AFE LSI includes a 12-b accuracy oversampling analog/digital converter. The EC and RCV LSIs are 26- and 16-bit microprogrammable digital signal processors, respectively. A digital phase-locked loop is used to minimize the analog part. Residual echo increase by a timing phase jump is compensated for by a newly introduced additional adaptive filter. Infinite impulse response filters and multiresponse filters reduce the necessary number of taps for both the echo canceller and the decision-feedback equalizer. The AFE and the two digital signal processor LSIs are implemented in 1.6- and 1.2-μm double-metal layer CMOS processes, respectively. A 6-km loop coverage was realized with a less than 10^-7 error rate. Total power consumption by the chip set is 580 mW at 5-V single supply     

5-GHz CMOS radio transceiver front-end chipset

Incorporating the direct-conversion architecture, a 5-GHz band radio transceiver front end chipset for wireless LAN applications is implemented in a 0.25-μm CMOS technology. The 4-mm² 5.25-GHz receiver IC contains a low noise amplifier with 2.5-dB noise figure (NF) and 16-dB power gain, a receive mixer with 12.0 dB single sideband NF, 13.7-dB voltage gain, and -5 dBm input 1-dB compression point. The 2.7-mm² transmitter IC achieves an output 1-dB compression of -2.5 dBm at 5.7 GHz with 33.4-dB (image) sideband rejection by using an integrated quadrature voltage-controlled oscillator. Operating from a 3-V supply, the power consumptions for the receiver and transmitter are 114 and 120 mW, respectively     

A fully integrated UHF RFID reader SoC for handheld applications in the 0.18 μm CMOS process

A low cost fully integrated single-chip UHF radio frequency identification(RFID) reader SoC for short distance handheld applications is presented.The SoC integrates all building blocks—including an RF transceiver,a PLL frequency synthesizer,a digital baseband and an MCU—in a 0.18μm CMOS process.A high-linearity RX frontend is designed to handle the large self-interferer.A class-E power amplifier with high power efficiency is also integrated to fulfill the function of a UHF passive RFID reader.The measure...     

An auto-I/Q calibrated CMOS transceiver for 802.11g

The CMOS transceiver IC exploits the superheterodyne architecture to implement a low-cost RF front-end with an auto-I/Q calibration function for IEEE 802.11g. The transceiver supports I/Q gain and phase mismatch auto tuning mechanisms at both the transmitting and receiving ends, which are able to reduce the phase mismatch to within 1/spl deg/ and gain mismatch to 0.1dB. Implemented in a 0.25 /spl mu/m CMOS process with 2.7 V supply voltage, the transceiver delivers a 5.1 dB receiver cascade noise figure, 7 dBm transmit, and a 1 dB compression point.     

A 1.75-GHz highly integrated narrow-band CMOS transmitter withharmonic-rejection mixers

A highly integrated 1.75-GHz 0.35-μm CMOS transmitter is described. The I/Q modulator-based transmitter facilitates integration through the use of a unique mixer, termed a harmonic-rejection mixer, and a wide loop bandwidth phase-locked loop (PLL) for the RF synthesizer. The harmonic-rejection mixers are used to eliminate the need for a discrete IF filter and the use of a wide loop bandwidth PLL allowed for the complete integration of the synthesizers using low-Q components while achieving low phase noise. The entire transmit signal path from the digital-to-analog converters to the power amplifier, including two fully integrated frequency synthesizers, is integrated into a single-chip solution. The transmitter was tested with a testing buffer before the power amplifier (PA) and achieved less than 1.3° rms phase error when modulating a DCS-1800 GMSK signal. The prototype consumed 151 mA from a 3-V supply. A class-C PA, capable of driving 25 dBm off-chip, was included and the output was compared to the testing buffer with little change in the transmitter performance     

A fully integrated SOC for 802.11b in 0.18-/spl mu/m CMOS

A fully integrated system-on-a-chip (SOC) intended for use in 802.11b applications is built in 0.18-/spl mu/m CMOS. All of the radio building blocks including the power amplifier (PA), the phase-locked loop (PLL) filter, and the antenna switch, as well as the complete baseband physical layer and the medium access control (MAC) sections, have been integrated into a single chip. The radio tuned to 2.4 GHz dissipates 165 mW in the receive mode and 360 mW in the transmit mode from a 1.8-V supply. The receiver achieves a typical noise figure of 6 dB and -88-dBm sensitivity at 11 Mb/s rate. The transmitter delivers a nominal output power of 13 dBm at the antenna. The transmitter 1-dB compression point is 18 dBm and has over 20 dB of gain range.     

3 V, 28 mW Si-bipolar front-end IC for 900 MHz homodyne wirelessreceivers

A 900 MHz homodyne receiver front-end bipolar chip is presented. The circuit consists of a low-noise amplifier and two double-balanced mixers for in-phase and quadrature channels. The power supply voltage is 3 V and power dissipation is 28 mW. The measured performance includes 33.5 dB voltage gain, a 3.1 dB noise figure, -13 dBm input referred IP3, -95 dB LO leakage into the RF port on wafer probing, and less than 0.1 dB I/Q magnitude imbalance     

用于IEEE802．11b／g WLAN直接下变频接收机的射频前端设计

介绍了一种应用于IEEE802．11b／g无线局域网接收机射频前端的设计。基于直接下变频的系统架构。接收机集成了低噪声放大器、I／Q下变频器、去直流偏移滤波器、基带放大器和信道选择滤波器。电路采用TSMC0．18μm CMOS工艺设计,工作在2．4GHz ISM（工业、科学和医疗）频段,实现的低噪声放大器噪声系数为0．84dB,增益为16dB,S11低于-15dB,功耗为13mW;I／Q下变频器电压增益为2dB,输入1dB压缩点为-1 dBm,噪声系数为13dB,功耗低于10mw。整个接收机射频前端仿真得到的噪声系数为3．5dB,IIP3为-8dBm,IP2大于30dBm,电压增益为31dB,功耗为32mW。     

A monolithic 3.1-4.8 GHz MB-OFDM UWB transceiver in 0.18-μm CMOS

A monolithic RF transceiver for an MB-OFDM UWB system in 3.1-4.8 GHz is presented.The transceiver adopts direct-conversion architecture and integrates all building blocks including a gain controllable wideband LNA,a I/Q merged quadrature mixer,a fifth-order Gm-C bi-quad Chebyshev LPF/VGA,a fast-settling frequency synthesizer with a poly-phase filter,a linear broadband up-conversion quadrature modulator,an active D2S converter and a variablegain power amplifier.The ESD protected transceiver is fabricated in Jazz Semiconductor's 0.18-μm RF CMOS with an area of 6.1 mm2 and draws a total current of 221 mA from 1.8-V supply.The receiver achieves a maximum voltage gain of 68 dB with a control range of 42 dB in 6 dB/Step,noise figures of 5.5-8.8 dB for three sub-bands,and an inband/out-band IIP3 better than-4 dBm/+9 dBm.The transmitter achieves an output power ranging from-10.7 to-3dBm with gain control,an output P1dB better than-7.7 dBm,a sideband rejection about 32.4 dBc,and LO suppression of 31.1 dBc.The hopping time among sub-bands is less than 2.05 ns.     

A Single-Chip CMOS Transceiver for UHF Mobile RFID Reader

This paper describes a single-antenna low-power single-chip radio frequency identification (RFID) reader for mobile phone applications. The reader integrates an RF transceiver, data converters, a digital baseband modem, an MPU, memory, and host interfaces. The direct conversion RF receiver architecture with the highly linear RF front-end circuit and DC offset cancellation circuit is used to give good immunity to the large transmitter leakage. It is suitable for a mobile phone reader with single-antenna architecture and low-power reader solution. The transmitter is implemented in the direct I/Q up-conversion architecture. The frequency synthesizer based on a fractional-N phase-locked-loop topology offering 900 MHz quadrature LO signals is also integrated with the RF transceiver. The reader is fabricated in a 0.18 mum CMOS technology, and its die size is 4.5 mm times 5.3 mm including electrostatic discharge I/O pads. The reader consumes a total current of 89 mA apart from the external power amplifier with 1.8 V supply voltage. It achieves an 8 dBm P1dB, an 18.5 dBm IIP3, and a maximum transmitter output power of 4 dBm.     

A WiMedia/MBOA-Compliant CMOS RF Transceiver for UWB

A WiMedia/MBOA compliant RF transceiver for ultra-wideband data communication in the 3-5-GHz band is presented. The transceiver includes receiver, transmitter and synthesizer is completely integrated in 0.13-mum standard CMOS technology. The receiver uses a feedback-based low-noise amplifier (LNA) to obtain an RF gain of 4 to 37 dB and an overall measured noise figure of 3.6 to 4.1 dB over the 3-5-GHz band of interest. The transmitter supports an error vector magnitude (EVM) of -28 dB up to -4 dBm output power and meets the FCC and WiMedia mask specifications. The power consumption from a single supply voltage of 1.5 V is 237 mW for the receiver and 284 mW for the transmitter, both including the synthesizer     

Design and analysis of an energy-efficient O-QPSK coherent IR-UWB transceiver with a 0.52° RMS phase-noise fractional synthesizer

This paper explores an energy-efficient pulsed ultra-wideband (UWB) radio-frequency (RF) front-end chip fabricated in 0.18-μm CMOS technology,including a transmitter,receiver,and fractional synthesizer.The transmitter adopts a digital offset quadrature phase-shift keying (O-QPSK) modulator and passive direct-phase multiplexing technology,which are energy-and hardware-efficient,to enhance the data rate for a given spectrum.A passive mixer and a capacitor cross-coupled (CCC) source-follower driving amplifier (DA) are also designed for the transmitter to further reduce the low power consumption.For the receiver,a power-aware low-noise amplifier (LNA) and a quadrature mixer are applied.The LNA adopts a CCC boost common-gate amplifier as the input stage,and its current is reused for the second stage to save power.The mixer uses a shared amplification stage for the following passive IQ mixer.Phase noise suppression of the phase-locked loop (PLL) is achieved by utilizing an even-harmonics-nulled series-coupled quadrature oscillator (QVCO) and an in-band noise-aware charge pump (CP) design.The transceiver achieves a measured data rate of 0.8 Gbps with power consumption of 16 mW and 31.5 mW for the transmitter and the receiver,respectively.The optimized integrated phase noise of the PLL is 0.52° at 4.025 GHz.     

A Single-Chip Dual-Band CDMA2000 Transceiver in 0.13 μm CMOS

A single-chip, dual-band transceiver for CDMA2000 is presented. The design supporting the North American cellular and PCS bands features a complete zero-IF receiver, a direct-conversion transmitter and two fully integrated synthesizers with VCOs. The analog receiver front-end comprises two self-matched wideband LNAs, a highly linear demodulator and a third-order baseband filter. In a test version I/Q ADCs and a digital front-end (DFE) to provide channel and matched filtering are included to demonstrate the performance of a fully integrated analog/digital line-up. Measured maximum SNR values of 23 dB and 25 dB for PCS and Cell bands, respectively, are achieved. The transmitter comprises baseband buffers and filters, an I/Q-modulator and separate output drivers for each band. An analog gain control (AGC) for realization of a dynamic range is implemented and a maximum output power of at a total CDG4 urban current of 34 mA is achieved for the PCS band. Measured ACPR1 and values are and 0.998 for the Cell band and and 0.995 for the PCS band, respectively. The chip is fabricated in a 0.13 RF-CMOS process, occupies a die size of 8.4 and operates with a 2.5 V supply.     

一种用于背板互连的10 Gbit/s接口电路

基于SMIC 40 nm CMOS工艺,提出了一种用于背板互连的10 Gbit/s I/O接口电路。该接口电路由前馈均衡器(FFE)、接收机前端放大器和判决反馈均衡器(DFE)组成。FFE对发射端信号进行预加重,DFE消除较大的残余码间干扰。重点分析了FFE和DFE在消除码间干扰时存在的问题。使用改进的FFE减少对发射端信号的衰减,保证信号到达接收端时具有较大幅度,实现接收机对信号的正确判决,降低系统的误码率。测试结果表明,系统数据率为10 Gbit/s,传输信道在Nyquist频率(即5 GHz)处的衰减为22.4 dB。在1.1 V电源电压下,判决器Slicer输入端信号眼图的眼高为198 mV,眼宽为83 ps。FFE的功耗为31 mW,接收机前端放大器的功耗为1.8 mW,DFE的功耗为5.4 mW。     

A 20-mA-receive, 55-mA-transmit, single-chip GSM transceiver in0.25-μm CMOS

This paper presents a low-power 900-MHz GSM transceiver developed in a 0.25-μm CMOS technology. The superhet receiver, with a single intermediate frequency at 71 MHz, has an overall worst case noise figure of 8.1 dB, including all filters. The overall gain can be digitally controlled over 98-dB range. The receiver consumes only 19.5 mA from the 2.5-V voltage supply while achieving the required blocking and intermodulation performance. The direct conversion transmitter has a fully integrated phase shifter and provides a 2-mW signal to the power amplifier with a low level of spurious emissions. The transmitted Gaussian minimum shift keying signal has an RMS average phase error <2°, and the overall current consumption of the transmitter is 55 mA     

0.5-V 5.6-GHz CMOS Receiver Subsystem

The building blocks of a 0.5-V receiver, including a receiver front-end and a low-pass filter (LPF), are fabricated using 0.18- $mu{hbox{m}}$ CMOS technology. At 5.6 GHz, the receiver front-end achieves a voltage gain of 17.1 dB and a noise figure of 8.7 dB, while dissipating at 19.4 mW. The fifth-order low-pass Chebyshev filter achieves a corner frequency of 2.6 MHz and an input-referred noise of 28.5 nV/sqrt (Hz) at 6.8 mW. The receiver front-end is further integrated with the LPFs to form a highly integrated receiver subsystem at ultra-low voltage.      

The design of a 3-V 900-MHz CMOS bandpass amplifier

A new bandpass amplifier which performs both functions of low-noise amplifier (LNA) and bandpass filter (BPF) is proposed for the application of 900-MHz RF front-end in wireless receivers. In the proposed amplifier, the positive-feedback Q-enhancement technique is used to overcome the low-gain low-Q characteristics of the CMOS tuned amplifier. The Miller-capacitance tuning scheme is used to compensate for the process variations of center frequency. Using the high-Q bandpass amplifier in the receivers, the conventional bulky off-chip filter is not required. An experimental chip fabricated by 0.8-μm N-well double-poly-double-metal CMOS technology occupies 2.6×2.0 mm² chip area. Under a 3 V supply voltage, the measured quality factor is tunable between 2.2 and 44. When the quality factor is tuned at Q=30, the measured center frequency of the amplifier is tunable between 869-893 MHz with power gain 17 dB, noise figure 6.0 dB, output 1 dB compression point at -30 dBm, third-order input intercept point at -14 dBm, and power dissipation 78 mW