共查询到20条相似文献,搜索用时 31 毫秒
1.
制作了2种形式的铟凸点:即直接蒸发沉积的铟柱和将铟柱回流得到的铟球。同时对比了铟柱和铟球2种凸点的剪切强度,测试结果表明铟球剪切强度为5.6MPa,铟柱的剪切强度为1.9MPa,前者约为后者的2.9倍。对铟凸点微观结构的X光衍射分析发现:铟柱剪切强度低是织构弱化所致;铟球剪切强度高是由于回流破坏了铟柱的理想(101)丝织构模式,从而提高了铟球的剪切强度。 相似文献
2.
Hong-Jyh Li Kirichenko T.A. Kohli P. Banerjee S.K. Graetz E. Tichy R. Zeitzoff P. 《Electron Device Letters, IEEE》2002,23(11):646-648
Experimental results of germanium (Ge) and indium (In) preamorphization by ion-implantation show that the diffusion of boron (B) is retarded by the presence of Ge or In and that this retardation is more important than the preamorphization (dechanneling) effect. Result shows that In retards B diffusion more than Ge and the retardation effect due to In becomes greater with increasing retained dose of In. Larger In doses cause larger strain, which results in more B being tied up in immobile clusters near the surface. In order to achieve adequate retained dose of In, the implanted dose of In must be increased to 5/spl times/10/sup 15/ cm/sup -2/. After anneal, the junction depth (at 10/sup 18/ cm/sup -3/) is reduced from 628 /spl Aring/ in the control wafer (no In co-implant) to 480 /spl Aring/. 相似文献
3.
The interfacial reactions between In49Sn solders and Ag thick films at temperatures ranging from 200°C to 350°C have been
studied. The intermetallic compound formed at the Ag/In49Sn interface is Ag2In enveloped in a thin layer of AgIn2. Through the measurement of the thickness decrease of Ag thick films, it has been determined that the reaction kinetics of
Ag2In has a linear relation to reaction time. Morphology observations indicated that the linear reaction of Ag2In was caused by the floating of Ag2In into the In49Sn solder as a result of the In49Sn solder penetrating into the porous Ag thick film. A sound joint can be
obtained when a sufficient thickness of the Ag thick film (over 19.5 μm) reacts with the In49Sn solder. In this case, the
tensile tested specimens fracture in the In49Sn matrix. 相似文献
4.
CdO对In2O3电导和气敏性能的影响 总被引:2,自引:1,他引:1
为探索新型CdO-In2O3材料的气敏性能,用化学共沉淀法制备了CdO掺杂的In2O3微粉,研究了CdO掺杂对In2O3电导和气敏效应的影响。结果表明CdO和In2O3间能形成有限固溶体In2-CdxO3(0≤x≤0.02);In1.98Cd0.02O3x的电导比纯In2O3小得多;900℃下热处理4h所得的x(CdO)为2%的In2O3传感器在183℃工作温度下,对45μmol·L–1C2H5OH的灵敏度达276、响应–恢复时间只有3s和180s。有望开发为一类新型酒敏材料。 相似文献
5.
The CIGS thin films are prepared by co-evaporation of elemental In, Ga and Se on the substrates of Mo-coated glasses at400℃ followed by co-evaporation of elemental Cu and Se at 550℃. We study the structural and electrical properties usingXRD, XRF and Hall effect measurements. In general, Cu(In,Cra)5Se8 phase exists when Cu/(In Ga) ratio is from 0.17 to0.27, Cu(In,Ga)3Se5 phase exists for Cu/(In Ga) ratio between 0.27 and 0.41, Cu2(In,Ga)4Se7 and Cu(In,Ga)2Se3.5 phasesexist for Cu/(In Ga) ratio between 0.41 and 0.61, and OVC(or ODC) and CuIn0.7Ga0.3 Se2 phases exist when Cu/(In Ga)ratio is from 0.61 to 0.88. With the increase of Cu/(In Ga) ratio, the carrier concentrations of the films gradually increase,but the electrical resistivity gradually decreases. 相似文献
6.
CIGS薄膜(InGa)2Se3-富Cu-富In(Ga)的演变 总被引:1,自引:0,他引:1
采用三步共蒸发工艺顺序沉积铜铟镓硒(CuInGaSe2,CIGS)薄膜.薄膜的厚度、组份、晶相结构分别由台阶仪、X射线荧光光谱仪(XRF)和X射线衍射仪(XRD)来表征.在(In,Ga)2Se3预制层-富Cu相的演变过程中,依次发生以下相变:Cu(In,Ga)5Se8、Cu(In,Ga)3Se5、Cu2(In,Ga)4Se7(或Cu(In,Ga)2Se3.5)、Cu(In,Ga)Se2(液相CuxSe).在富Cu相-富In(Ga)相的演变过程中,依次发生以下相变:Cu(In,Ga)Se2(液相CuxSe)、Cu2(In,Ga)4Se7(或Cu(In,Ga)2Se3.5)、Cu(In,Ga)3Se5、Cu(In,Ga)5Se8.对这两个演变过程中薄膜的生长机理和结构特性进行了讨论. 相似文献
7.
Hong-Jyh Li Bennett J. Zeitzoff P. Kirichenko T.A. Banerjee S.K. Henke D. 《Electron Device Letters, IEEE》2003,24(4):221-223
The out-diffusion of indium (In) from In-implanted silicon (Si) samples that includes bare Si, samples with an oxide-cap layer, nitride-cap layer, and nitride/oxide/Si sandwiched samples, is investigated. The dose loss of In with respect to different implant energies, doses, and soak times during rapid thermal annealing (RTA) is quantified. Experimental results of bare Si samples show that over 90% of In out-diffusion happens within 1 sec of soak time in the RTA process. In the capped samples, In rapidly diffuses through the oxide layer and stops at the nitride/oxide interface. In gets piled up at the interface of Si/oxide and oxide/nitride, and nitride very efficiently prevents In out-diffusion from the oxide layer out to the nitride layer. In addition, In gets more segregated in the Si surface in the presence of boron. 相似文献
8.
W. K. Fong C. F. Zhu B. H. Leung C. Surya B. Sundaravel E. Z. Luo J. B. Xu I. H. Wilson 《Microelectronics Reliability》2002,42(8):1179-1184
A small indium flux was used as a surfactant during the growth of gallium nitride by rf-plasma assisted molecular beam epitaxy. The effects of the In surfactant on the optical and structural properties of undoped GaN were studied by photoluminescence (PL), X-ray diffraction, atomic force microscopy (AFM), and Rutherford backscattering spectrometry (RBS). PL studies show that the use of In surfactant is beneficial to the reduction of deep-level defects. The X-ray rocking curves demonstrate a 20% decrease in the full width at half maximum value for the films grown with In surfactant. AFM studies show that the root mean squared surface roughness for films grown with and without In surfactant are 5.86 and 6.99 nm respectively indicating significant improvement in surface morphology. The improved surface morphology is attributed to the enhanced 2-dimensional growth promoted by the application of In surfactant. RBS studies show that the χmin values along [0 0 0 1] direction are 2.06% and 2.16% for the samples grown with and without In surfactant respectively. Off-normal ion channeling studies were performed to further investigate the effects of In surfactant on the crystallinity. It is found that the number density of stacking faults is smaller for the sample grown with In surfactant compared to the one grown without In surfactant. However, defect analysis shows that dislocations are found in the sample grown with In surfactant in contrary to the one grown without In surfactant. We speculate that there is a thickness limit of GaN grown with In surfactant and the thickness of our samples exceed this limit, leading to the presence of dislocation. 相似文献
9.
本文对MOOC的发展现状做出了介绍.针对MOOC中存在的问题,本文提出了课程评定、课程监督和课程反馈这三种解决方案.除此之外,本文还对影响课程的小细节做出了介绍. 相似文献
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11.
Hwa-Teng Lee Choo-Yeow Lee Fok-Foo Lee Yin-Fa Chen Yang-Hsien Lee 《Journal of Electronic Materials》2009,38(10):2112-2121
The effects of 1 wt.%, 5 wt.%, and 10 wt.% additions of indium (In) on the microstructure and compound morphology of Sn-Ag-Sb
lead-free solder joints␣were examined. The results showed that In prompts the formation of Ag3(Sn,In), Ag2(In,Sn), and InSb compounds within the solder matrix. As the amount of In was increased, the Sn atoms in the Ag3Sn compound were gradually replaced by In atoms, prompting a transformation from Ag3Sn to Ag3(Sn,In) and finally to Ag2(In,Sn). This transformation occurs more readily under high-temperature conditions. The Ag2(In,Sn) compound formed in Sn-Ag-Sb-xIn/Cu solder joints was found to have either a leaf-like morphology or an antler-like morphology. Finally, with In additions
greater than 5 wt.%, the Cu6Sn5 interfacial compounds in the solder/Cu joints transformed into Cu6(Sn,In)5. 相似文献
12.
N. Quitoriano W. S. Wong L. Tsakalakos Y. Cho T. Sands 《Journal of Electronic Materials》2001,30(11):1471-1475
The kinetic behavior of the Pd/In bilayer reaction is analyzed, with emphasis on the effect of nanometer-scale diffusion barriers
at the Pd/In interface. It is shown that the Pd/In reaction proceeds rapidly and without a discernable incubation period at
temperatures below 200 C if the Pd/In interface is nominally free of either contamination or intentionally-deposited intervening
layers. Air exposure of the Pd surface prior to In deposition is sufficient to delay the onset of the reaction to produce
the intermetallic phase by PdIn3 for several minutes at 200 C. This incubation period can be further controlled by deposition of a nanometer-scale Ti layer
onto the Pd prior to air exposure and In deposition. The implications of these results for the design of transient-liquid-phase
waferbonding processes based on Pd−In are discussed. 相似文献
13.
LU Yi-jun GAO Yu-lin ZHENG Jian-sheng LI Zhi-feng CAI Wei-ying WANG Xiao-guang 《半导体光子学与技术》2002,8(3):129-134
Raman scattering spectroscopy is applied to investigate the phonon modes in GaxIn1-xP (x=0.52) and (AlxGa1-x)0.51In0.49P (x=0.29) alloys. Two-mode behavior in GaxIn1-xP and three-mode behavior in (AlxGa1-x)0.51In0.49P are observed. In ordered GaxIn1-xP, we clearly distinguish the TO1(GaP-like) mode and the splitting of LO1(GaP-like) and LO2 (InP-like) modes, which is believed to be the result of superlattice effect of ordering, and the LO1 LO2 mode, which is observed for the first time. In addition to the b/a ratio, it‘s found that the relative intensity of the FLA and the LO1 LO2 modes also corresponds to the degree of order. The TO1 and the splitting of LO1 and LO2 devote together to the reduction of the “valley depth“. In (AlxGa1-x)0.51In0.49P, the doubling of FLA is observed. Due to the influence of Al composition, the GaP-like LO mode becomes a shoulder of the InP-like LO mode. The unresolved Raman spectra indicate the existence of ordered structure in (AlxGa1-x)0.51In0.49P alloys. 相似文献
14.
The CIGS thin trims are prepared by co-evaporation of elemental In, Ga and Se on the substrates of Mo-coated glasses at 400℃ followed by co-evaporation of elemental Cu and Se at 550℃. We study the structural and electrical properties using XRD, XRF and Hall effect measurements. In general, Cu(In,Ga)sSes phase exists when Cu/(In+Ga) ratio is from 0.17 to 0.27, Cu(In,Ga)3Se5 phase exists for Cu/(In+Ga) ratio between 0.27 and 0.41, Cu2(in,Ga)4Se7 and Cu(In,Ga)2Se3.5 phases exist for Cu/0n+Ga) ratio between 0.41 and 0.61, and OVC(or ODC) and CuIn0.7Ga0.3Se2 phases exist when Cu/(In+Ga) ratio is from 0.61 to 0.88. With the increase of Cu/(In+Ga) ratio, the carrier concentrations of the films gradually increase, but the electrical resistivity gradually decreases. 相似文献
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建立了SACM型In0.53Ga0.47As/In0.52Al0.48As雪崩光电二极管(APD)的分析模型,通过数值研究和理论分析设计出高性能的In0.53Ga0.47As/In0.52Al0.48As APD。器件设计中,一方面添加了In0.52Al0.48As势垒层来阻挡接触层的少数载流子的扩散,进而减小暗电流的产生;另一方面,雪崩倍增区采用双层掺杂结构设计,优化了器件倍增区的电场梯度分布。最后,利用ATLAS软件较系统地研究并分析了雪崩倍增层、电荷层以及吸收层的掺杂水平和厚度对器件电场分布、击穿电压、IV特性和直流增益的影响。优化后APD的单位增益可以达到0.9 A/W,在工作电压(0.9 Vb)下增益为23.4,工作暗电流也仅是纳安级别(@0.9 Vb)。由于In0.52Al0.48As材料的电子与空穴的碰撞离化率比InP材料的差异更大,因此器件的噪声因子也较低。 相似文献
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18.
在无线多通道语音通信中,距离长短使各接收机接收信号的时间不一,同步输出需要精确的延时。介绍一种新型的基于AMBE2000和AD73311的高质量语音同步通信系统的设计与实现。该系统能够在2.0~2.4kb/s的低比特速率产生高话音质量,实现最小步长为1us的输出延时,达到多路同步传输效果。因此,该系统可以广泛应用于软件无线电,多模式电台及多路广播等场合。 相似文献
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