AI/W/TiN/AI及AI/W/TiW/AI结构特性研究

本文研究了H_2还原WF_6在α-Si/TiN/Al和TiW/Al衬底上LPCVD生长钨膜的特性。测量和分析了Al/W/TiN/Al和Al/W/TiW/Al结构的接触电阻和界面特性,研究了两种结构的热稳定性。结果表明,H_2还原WF_6可以在α-Si/TiN/Al和TiW/Al衬底上实现选择性钨淀积,钨膜质量较好。Al/W/TiN/Al和Al/W/TiW/Al结构接触电阻率为10~(-?)Ωcm~2量级,远低于难熔金属硅化物同硅的欧姆接触电阻率。两种结构的热稳定性良好。采用TiN或TiW作为Al和W之间的隔离层,CVD-W填充互连层连通孔可以满足多层金属平坦化互连技术的要求。     

三星532/4500/5500/735/535/435影碟机电源电路图

49三星532/4500/5500/735/535/435影碟机电源电路图$本刊资料室     

Crystallophysical properties of the In1 ? yGayAs1 ? xNx/GaAs heterostructures

Some properties of the In_{1 − y} Ga _y As_{1 − x} N _x unordered alloys and physical prerequisites of their use in science and technology are considered. The results of studying the intermolecular interaction in the systems under study and the features of their application to the In_{1 − y} Ga _y As_{1 − x} N _x /GaAs functional hetero-structures are presented.     

Spinodal Decomposition of GaxIn1?xAsyP1?yQuaternary Alloys

Using X-ray structural analysis, scanning electron microscopy, atomic force microscopy, and photoluminescent spectroscopy, it is shown that it is possible to obtain a small-scale domain structure on the surface of liquid-phase epitaxial heterostructures. The domain structure emerges as a result of spinodal decomposition of the Ga _x In_{1 − x} As _y P_{1 − y} quaternary alloy due to immiscibility of its components and relaxation of its lattice parameter to surrounding layers.