AWG用Si基SiO2波导材料的制备

平面光波导在光波分复用技术中起着重要的作用，尤其是Si基SiO2波导器件在光通信领域中具有许多优点。因此，如何在Si衬底上制备出性能稳定良好的SiO2光波导材料至关重要。本文介绍了几种制备SiO2厚膜的方法。     

光波导用TiO2/SiO2复合薄膜的制备及其性能研究

用离子自组装成膜技术制备了用作光波导器件的TiO2／SiO2复合薄膜，介绍了薄膜光学常数的测定方法，并研究了光波导的波导特性．结果表明随着TiO2含量的增大，光波导的折射率增加；但同时光波导损耗也将发生变化，一般TiO2占10％时，薄膜的波导损耗较低．在更高的含量范围内，必须使TiO2分散．     

用氧化多孔硅方法制备厚的Si02膜及其微观分析

用氧化多孔硅的方法来制备厚的SiO2成本低,省时.氧化硅膜的厚度,表面粗糙度和组分这三个参数,对波导器件的性能有重要影响,扫描电子显微镜(SEM)、原子力显微镜(AFM)和俄歇分析得到：氧化的多孔硅的膜厚已达21.2μm;表面粗糙度在1nm以内,Si和O的组分比为1:1.906.这些结果表明,用氧化多孔硅方法制备的厚SiO2膜满足低损耗光波导器件的要求.     

光波导用TiO_2/SiO_2复合薄膜的制备及其性能研究

用离子自组装成膜技术制备了用作光波导器件的TiO2/SiO2复合薄膜,介绍了薄膜光学常数的测定方法,并研究了光波导的波导特性.结果表明随着TiO2含量的增大。光波导的折射率增加;但同时光波导损耗也将发生变化,一般TiO2占10％时,薄膜的波导损耗较低.在更高的含量范围内,必须使TiO2分散.     

磁控射频溅射法制备光波导薄膜研究

采用磁控射频溅射法制备了用作光波导器件的玻璃薄膜。通过选取不同的溅射材料,顺不同溅射条件下制备的玻璃薄膜的光学参数进行的测量、比较,并对其作为光波导的性能进行研究,通过理论上推导与计算,得出了在1．55μm窗口下制备光小导器件的玻璃薄膜所应具备的溅射条件。     

SiON对Si基SiO2 AWG偏振补偿的数值分析

采用全矢量交替方向隐含迭代方法系统分析了高折射率SiON薄膜对Si基SiO2阵列波导光栅中波导应力双折射的影响.分析结果表明在芯区上或下表面沉积SiON薄膜可以明显减小Si基SiO2阵列波导光栅(AWG)中波导的应力双折射,但这两种补偿方法容易使模场偏移中心位置,不利于波导与光纤的耦合.理想的补偿方法是在芯区上下同时补偿,可减小模场偏移,并用该方法设计了偏振无关的16通道AWG.     

磁控射频溅射法制备光波导薄膜研究

采用磁控射频溅射法制备了用作光波导器件的玻璃薄膜。通过选取不同的溅射材料,在不同溅射条件下制备的玻璃薄膜的光学参数进行的测量、比较,并对其作为光波导的性能进行研究,通过理论上推导与计算,得出了在１,５５ｕｍ窗口下制备光波导器件的玻璃薄膜所应具备的溅射条件。     

光波导用玻璃薄膜的制备及其性能研究

采用磁控射频溅射法制备光波导用玻璃薄膜。本文重点分析了不同溅射条件如氧分压、基片种类、基片温度下制备的薄膜光学性能，通过比较，得到制备0.6328μm和1.55μm窗口下光波导器件用玻璃薄膜所需溅射条件。     

宽带光波导放大器透射谱研究

提出一种宽带集成光波导放大器结构，即在光波导放大器的输出端镀上对1．55μm波段光波具有选择作用的多层介质滤波薄膜，利用多层介质滤波薄膜的透射特性对放大器的增益平坦特性进行研究，为器件制作奠定了基础。     

光波导用玻璃薄膜的制备及其性能研究

采用磁控射频溅射法制备光波导用玻璃薄膜。本文重点分析了不同溅射条件如氧分压、基片种类、基片温度下制备的薄膜光学性能，通过比较，得到制备０．６３２８μｍ和１．５５μｍ窗口下光波导器件用玻璃薄膜所需溅射条件。     

硅基光波导结构与器件

简要评述硅基光波导的结构，工艺及其器件，包括低损耗的硅基光波导，电光波导器件，红外波导探测器，氧化硅光回路等。     

Editorial, Jan. 1975

This Special Issue of the IEEE TRANSACTIONS on Microwave Theory and Techniques is devoted to two closely related fields: integrated optics and optical waveguides. The subject of optical waveguides is pertinent to optical communications by means of glass fibers and to the circuitry of integrated optics. The theory of optical waveguides has reached a stage of relative maturity while integrated optics is still in a relatively early stage of its development. Fiber waveguides seem to have a fairly secure future since the spectacular successes of glass fiber research almost certainly ensure their application in optical communications systems. Already there are examples of experimental military applications of optical fibers and their use in the telephone system is anticipated.     

硅基光波导结构与器件

简要评述包括低损耗的电光波导器件、红外波导探测器、二氧化硅光波回路等硅基光波导的结构、工艺及其器件。     

Optical signal distribution to MSM photodetector arrays viaintegrated polyimide waveguides

The integration of metal-semiconductor-metal (MSM) photodetector arrays with polyimide ridge waveguides is demonstrated. MSM detectors were fabricated using transparent indium tin oxide (ITO) interdigitated electrodes on semi-insulating GaAs substrates. An optical buffer layer of SiO₂ was deposited and patterned, and then polyimide ridge waveguides were fabricated on top by spin coating and photolithography. The guides were multimode with widths from 10 to 50 μm. Light at 830 nm was coupled efficiently from the waveguides through gaps in the SiO ₂ buffer layer into the underlying detector structures. Absolute responsivities of the integrated MSM devices were around 0.5 A/W and the 3 dB bandwidths of 5-6 GHz were measured. Division of the input signal between sets of two and four detectors under a single waveguide has been achieved, highlighting the potential for the fabrication of integrated optoelectronic switches     

Simple technologies for fabrication of low-loss silica waveguides

A simple and reproducible technology is developed for the fabrication of low-loss silica waveguides on silicon substrates. The guiding layer is formed by changing the Si-O ratio composition of the SiO/sub 2/ layer. The waveguides can be made to have a good match to either optical fibres or guided-wave devices in III-V compound semiconductors.<>     

硅基波导光开关及开关阵列的研究进展

光开关是光网络中实现光交换的核心器件.硅基波导光开关作为一类重要的开关器件,具有体积小、开关速度快、兼容性好等优点.近年来随着硅基波导制作技术的成熟,硅基波导光开关及开关阵列的研究日益受到人们的重视.文章介绍了SOI(silicon-on-insulater)光波导、聚合物光波导和SiO2光波导等三类常见的硅基波导在光开关及开关阵列方面的一些研究进展.     

太赫兹波导发展现状与展望

太赫兹波具有良好的穿透性、低能性和宽带性,在高速空间通信、环境监测、外差探测、医学探测、无损检测和国防安全等领域具有重要的应用前景.波导传输技术和功能器件是太赫兹系统不可或缺的重要组成部分,太赫兹波导的性能决定了太赫兹系统的信号传输效率和集成度,引起人们的研究兴趣.近年来,太赫兹波导的发展取得了长足的进步,从普通的金属...     

Cold Light Mirror Fabricated by Electron Beam Evaporation of TiO2 and SiO2

A process suitable for production on a large scale of cold light mirror for film projector is introduced.Deposition parameters required for producing TiO2/SiO2 optical multialyer systems by electron beam evaporation of TiO2 and SiO2 starting materials are investigated.Manufacture and techniques of cold mirror and the adhesion, stability, wear and corrosion resistance of cold mirror by this process are discussed.The result shows that cold mirror produced has good optical properties and better adhesion.     

Progress of Si-based Optoelectronic Devices

Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize all-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si - based optoelectronic devices and integrated circuits can be achieved, it will lead to a new irtformational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si- based optoelectronic devices, such as light- emitting diodes, optical waveguides devices, Si photonic bandgap crystals, and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.