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1.
Integrated optical sensors make use of a p-n-junction for light intensity detection, typically. Because of the costs, additional optical components are not available in standard integration processes. Therefore, in higher level optical sensors extra optical components are not part of an integration. In this paper a concept for integration is proposed, which especially allows to measure the angles of a far distance light source relative to the surface of the chip and the coordinate system of the integrated structure. The invention makes use of the stack topology and the light opacity of metal layers in the monolithic integration, the light translucency of , and the electrical light sensitivity of diodes. Because of perfect device isolation the implementation can be done most advantageously in SOI CMOS technology. With minor modifications it is applicable in other integration technologies as well. But leakage currents and device mismatching will limit the obtainable performance additionally.  相似文献   

2.
Kuijk  M. Vounckx  R. 《Electronics letters》1997,33(21):1778-1779
A novel principle is proposed for integration of III-V light sources with CMOS VLSI circuits. The flipped III-V chip is connected to the CMOS chip by capacitive coupling instead of by a conductive connection method. Energy is transmitted through a dielectric connection layer using a high frequency carrier signal. The proposed system requires no post processing of the CMOS circuits and offers potentially high reworkability and good coupling efficiency  相似文献   

3.
A system that combines light sensors and analog and digital parts on the same CMOS chip has been fabricated. The optical and electrical properties of various photodiodes, which are fully compatible with a standard CMOS technology, are discussed. The current comparators use CMOS-compatible lateral bipolar transistors. The optical encoder also comprises a signal processor for code conversion, a serial or parallel output, and a self-test function. A 14-channel circuit which senses light signals at 880 nm with a power of 0.3-3 mW/cm2 has been fabricated. Response time is shorter than 1 μs at all illumination levels. This circuit operates in the temperature range -55 to +125°C. Its current consumption is 8 mA at 5 V  相似文献   

4.
陈泉润  崔钊  张涛  郑伟波 《半导体光电》2016,37(6):853-857,881
CMOS图像传感器具有功耗低、尺寸小,以及价格便宜等优点,目前已被广泛应用于智能手机中.采用CMOS图像传感器作为可见光通信的接收装置,有利于技术的推广和实用化.文章首先介绍了采用CMOS传感器作为可见光通信接收机的原理,接着针对当前国内外研究中存在的问题提出了信号增强算法,最后验证了算法的可行性和适用性,并由此提出了一套光ID信息服务系统模型.  相似文献   

5.
This paper presents a realization of a silicon-based standard CMOS, fully differential optoelectronic inte grated receiver based on a metal-semiconductor-metal light detector (MSM photodetector). In the optical receiver, two MSM photodetectors are integrated to convert the incident light signal into a pair of fully differential photo generated currents. The optoelectronic integrated receiver was designed and implemented in a chartered 0.35 μm, 3.3 V standard CMOS process. For 850 nm wavelength, it achieves a 1 GHz 3 dB bandwidth due to the MSM pho todetector's low capacitance and high intrinsic bandwidth. In addition, it has a transimpedance gain of 98.75 dBΩ, and an equivalent input integrated referred noise current of 283 nA from 1 Hz up to -3 dB frequency.  相似文献   

6.
解金山 《半导体光电》1990,11(3):265-272
本文详细地讨论了光纤通信的光源——半导体激光器(LD)和发光管(LED)的可靠性;重点论述了长波长光源的可靠性以及筛选方法。  相似文献   

7.
Fu  Z.H. Joshi  C.P. Titus  A.H. 《Electronics letters》2009,45(22):1138-1140
A real-time pH detection and monitoring sensor system using a novel design neuromorphic CMOS optical sensor chip is presented. The system uses Bogen's universal indicator solution combined with a white light source and the CMOS optical sensor chip to measure pH as a function of colour change in a sample. Bogen's universal indicator solution causes a colour change in a sample according to the pH of the sample. The output voltage from the colour-sensitive CMOS photodetector circuit on the chip is proportional to the pH of the sample. Experimental results show that this sensor system can determine the pH of a sample from pH 1 to 9 in real-time. The sensor chip is implemented in AMI 1.5 mum CMOS technology available through MOSIS.  相似文献   

8.
A DNA micro-array (DMA) for DNA detection is reported. The DMA combines a standard CMOS active pixel image sensor with a DNA detection protocol utilizing the binding of DNA targets and probes functionalized with gold nano-particles that can modify the opaqueness at the detection site. The DMA has been fabricated using a 0.5 μm CMOS process together with on-chip timing control and correlated double sampling. Experimental results show that the system can detect DNA samples with extremely low concentration down to 10 pM using ordinary light source.  相似文献   

9.
This paper discusses the control and implementation of a real-time spotting system. It is intended for high-density high-yield microarray fabrication to facilitate diagnostic and research effort in genomics and proteomics. The method is based on a self-sensing fully automated aspiring/dispensing pin. System performance is evaluated by several batch runs with deionized water solutions of 0.3% fluorescent Cy-3 dye, which has similar physical properties to the deoxyribonucleic acid (DNA) probe materials. Experimental results show that this system is capable of fast and robust DNA/protein microarray fabrication in high volume while keeping spot size as small as 60 $muhbox{m}$ consistently. Based on the laser scanned images and experimental data of the spotted microarrays, it is also verified that this system can recognize and prevent the formation of abnormal spots.   相似文献   

10.
A high-speed ten-channel optical receiver, integrated in a standard 0.6-μm CMOS technology, is presented. Each data channel consists of a spatially modulated light detector (SML-detector) and a low-offset receiver. The SML detector has a much higher intrinsic bandwidth than a conventional photodiode junction implemented in standard CMOS. One channel of the ten is sacrificed and used as a reference to define the threshold level for the other channels. The optical receiver can handle up to 250 Mb/s of noncoded data (including dc) per channel at 20 μW average light input power (λ=860 nm). Power dissipation per channel is only 4 mW. When combined with appropriate light emitters, a compact and low-cost optocoupler can be obtained with improved speed performance compared to existing optocouplers  相似文献   

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