共查询到15条相似文献,搜索用时 109 毫秒
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研究了有机薄膜晶体管器件.器件是以热生长的SiO2作为有机薄膜晶体管的栅绝缘层,酞菁铜作为有源层的.实验表明采用一种硅烷耦合剂-十八烷基三氯硅烷(OTS)修饰SiO2可以有效地降低栅绝缘层的表面能从而明显提高了器件的性能.器件的场效应迁移率提高了2.5倍、阈值电压降低了3 V、开关电流比从103增加到104.同时我们采用MoO3修饰铝作为器件的源漏电极,形成MoO3/Al双层电极结构.实验表明在同样的栅极电压下,具有MoO3/Al 电极的器件和金电极的器件有着相似的源漏输出电流Ids.结果显示具有OTS/SiO2双绝缘层的及MoO3/Al 电极结构的器件能有效改进有机薄膜晶体管的性能. 相似文献
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表面修饰的ZnPc薄膜晶体管性能研究 总被引:1,自引:1,他引:0
以热生长的SiO2作为栅绝缘层,酞菁锌(ZnPc)作为有源层,研究了具有十八烷基三氯硅烷(OTS,C18H37SiCl3)/SiO2双绝缘层结构的有机薄膜晶体管(OTFT)。实验表明,采用OTS可以有效地降低SiO2栅绝缘层的表面能并改善表面的平整度,器件的场效应迁移率提高了3.5倍,漏电流从10-9A降到10-10A,阈值电压降低了5 V,开关电流比从103增加到104。结果显示,具有OTS/SiO2双绝缘层的器件结构能有效改进OTFT的性能。 相似文献
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研究了磁控溅射法制备的复合绝缘层结构的有机薄膜晶体管.该器件是以酞菁铜(CuPc)作为有源层,SiO2/Si3N4/SiO2复合绝缘层和单层SiO2为绝缘层来进行对比研究的.结果显示与单层SiO2绝缘层的器件相比,具有复合绝缘层的器件结构能有效改进有机薄膜晶体管的性能.同时发现,不同厚度的SiO2/Si3N4/SiO2复合绝缘层对晶体管的性能也有影响,绝缘层太厚,感应电流小;绝缘层太薄,器件容易被击穿. 相似文献
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采用底栅顶接触结构,研究制备了以并五苯为有源层、聚甲基丙烯酸甲酯(PMMA)为绝缘层的全有机场效应晶体管(OFET),其中绝缘层采用溶液旋涂法制备,电极采用MoO3/Al双层电极。与传统采用单一Au为电极的器件相比,采用双层电极的器件性能大幅提高,经测试,器件的迁移率达到了0.133cm2/Vs,开关电流比可以达到2.61×105。对采用MoO3修饰层提高性能的作用机理进行了详细论证。 相似文献
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Y. Bai X. Liu L. Chen Khizar-ul-Haq M.A. Khan W.Q. Zhu X.Y. Jiang Z.L. Zhang 《Microelectronics Journal》2007,38(12):1185-1190
An organic thin-film transistor (OTFTs) having OTS/SiO2 bilayer gate insulator and MoO3/Al electrode configuration between gate insulator and source–drain (S–D) electrodes has been investigated. Thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine (CuPc) for an active layer. We have found that using silane coupling agents, octadecyltrichlorosilane (OTS) on SiO2, surface energy of SiO2 gate dielectric is reduced; consequently, the device performance has been improved significantly. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage and improves the on/off ratios simultaneously. The device with MoO3/Al electrode has similar source–drain current (IDS) compared to the device with Au electrode at same gate voltage. Our results indicate that using double-layer of insulator and modified electrode is an effective way to improve OTFT performance. 相似文献
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We have investigated a SiO2/SiNx/SiO2 composite insulation layer structured gate dielectric for an organic thin film transistor(OTFT) with the purpose of improving the performance of the SiO2 gate insulator. The SiO2/SiNx/SiO2 composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO2 insulation layer device,the SiO2/SiNx/SiO2 composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases. 相似文献
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LIU Xiang BAI Yu ZHU Wen-qing JING Xue-yin ZHANG Zhi-lin 《光电子快报》2007,3(6):435-437
A double insulation layer structure organic thin films transistor (OTFT) was investigated for improving the performance of the SiO2 gate insulator. A 50 nm PMMA layer was coated on top of the SiO2 gate insulator as the organic insulator layer. The results demonstrated that using inorganic/organic compound insulator as the gate dielectric layer is an effective method to fabricate OTFTs with improved electric characteristics and decreased leakage current. Electrical parameters of carrier mobility and on/off ratio were calculated. OTFT based on Si substrate with a field-effect mobility of 4.0 × 10-3cm2/Vs and on/off ratio of 104 was obtained. 相似文献
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以C60为激活层,同时以聚合物/高K氧化物双绝缘层结构研制了N型有机场效应晶体管。结果表明,采用这种双层结构的绝缘层能够很好的将Ta2O5和PMMA的优点结合在一起,即既利用了Ta2O5的高介电常数又利用了PMMA与半导体层良好的界面接触特性。与采用单一Ta2O5或这PMMA绝缘层的器件相比,这种具有双层结构的器件性能大幅提升。最终研制了能够在10V低电压下正常工作的C60晶体管,其场效应迁移率、阈值电压和开关电流比分别为0.26 cm2/Vs, 3.2V和8.31×104。同时,利用修饰绝缘层PMMA的疏水性大大降低了这种具有双层结构的N型有机晶体管的“迟滞效应”,从而让器件工作时有较好的稳定性。 相似文献
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Mizukami M. Hirohata N. Iseki T. Ohtawara K. Tada T. Yagyu S. Abe T. Suzuki T. Fujisaki Y. Inoue Y. Tokito S. Kurita T. 《Electron Device Letters, IEEE》2006,27(4):249-251
Active matrix organic-light-emitting-diode (AM OLED) panels, driven by organic thin-film transistors (OTFT), have been successfully fabricated on a flexible plastic substrate. The pixel circuit consists of two bottom-contact pentacene OTFTs working as switching and driving transistors. The panel has 16 /spl times/ 16 pixels, each of which have an OLED using a phosphorescent material with an emission efficiency of 30 cd/A. A tantalum oxide (Ta/sub 2/O/sub 5/) film with a dielectric constant of 24, prepared by the anodization of Tantalum (Ta), was used as the gate insulator of the OTFTs. The passivation layer on the OTFTs was formed by a layer of silicon dioxide (SiO/sub 2/) and two layers of polyvinyl alcohol. Using OTFTs with a Ta/sub 2/O/sub 5/ gate insulator, the authors have realized a flexible active matrix OLED panel driven with a low voltage of -12 V. 相似文献