Nyquist电流型7位20MHz采样率CMOS数模转换器

介绍了一种高速7位DAC的设计及芯片测试结果,该DAC选取高5位单位电流源,低2位二进制电流源的分段结构。考虑了电流源匹配、毛刺降低以及版图中误差补偿等方面的问题来优化电路。流片采用0.35μmChartered双层多晶四层金属工艺,测试结果表明在20 MH z的采样频率下,微分非线性度和积分非线性度分别小于±0.2 LSB和±0.35 LSB。该DAC的满幅建立时间是20 ns,芯片面积为0.17 mm×0.23 mm。电源电压为3.3 V,功耗为3 mW。     

折叠内插模数转换器分析及实现

应用Matlab/Simulink工具对折叠内插模数转换器进行了建模,研究了具有8bit分辨率、200MHz采样频率的该模数转换器的芯片设计和实现.系统设计时采用Matlab/Simulink进行行为级建模并分别分析了预放大的增益、折叠电路的带宽以及比较器的失调对动态性能的影响.设计实现的模数转换器实测结果表明,积分非线性误差和微分非线性误差分别小于0.77和0.6LSB,在采样频率为200MHz及输入信号频率为4MHz时,信号与噪声及谐波失真比为43.7dB.电路采用标准0.18μm CMOS数字工艺实现,电源电压为3.3V,功耗181mW,芯核面积0.25mm2.     

折叠内插模数转换器分析及实现

应用Matlab/Simulink工具对折叠内插模数转换器进行了建模,研究了具有8bit分辨率、200MHz采样频率的该模数转换器的芯片设计和实现．系统设计时采用Matlab/Simulink进行行为级建模并分别分析了预放大的增益、折叠电路的带宽以及比较器的失调对动态性能的影响．设计实现的模数转换器实测结果表明,积分非线性误差和微分非线性误差分别小于0.77和0.6LSB,在采样频率为200MHz及输入信号频率为4MHz时,信号与噪声及谐波失真比为43.7dB．电路采用标准0.18μｍ CMOS数字工艺实现,电源电压为3.3V,功耗181mW,芯核面积0.25mm2．     

一种用于高速14位A/D转换器的采样/保持电路

介绍了一种采用0.35 μm CMOS工艺的开关电容结构采样/保持电路.电路采用差分单位增益结构,通过时序控制,降低了沟道注入电荷的影响;采用折叠共源共栅增益增强结构放大器,获得了要求的增益和带宽.经过电路模拟仿真,采样/保持电路在80 MSPS、输入信号(Vpp)为2 V、电源电压3 V时,最大谐波失真为-90 dB.该电路应用于一款80 MSPS 14位流水线结构A/D转换器.测试结果显示:A/D转换器的DNL为0.8/-0.9 LSB,INL为3.1/-3.7 LSB,SNR为70.2 dB,SFDR为89.3 dB.     

一种10位160 kS/s的循环型模数转换器

提出了一种应用于图像传感器的10位160 kS/s的循环型模数转换器(ADC)。采用1.5位的流水线ADC结构,经过10次循环后,得到10位数字码输出。采用输入端自级联结构的两级运算放大器,提高了运放的增益。采用运放共享技术,实现单转双电路与ADC运放共享,降低了面积和功耗,实现了电平平移。基于0.13 μm CMOS工艺,在3.3 V电源电压和160 kHz采样速率下对ADC进行仿真。后仿真结果表明,该ADC的有效位数为9.45位,SNR为59.1 dB,SFDR为61.26 dB,DNL为±0.625 LSB,INL为±1.5 LSB。     

4位5GS/s 0.18μm CMOS并行A/D转换器

基于0.18 μm CMOS工艺,设计了一种最大采样速率为5 GS/s的4位全并行模数转换器.设计中,为了提高模数转换器的采样速度,采用三种技术相结合:1)比较电路与解码电路都采用流水线的工作方式;2)在比较器中使用电感技术,提高比较器的转换速度;3)使模拟电路和数字电路都工作在低摆幅的工作状态,在提高速度的同时,降低了电路的功耗.为了提高电路的信噪比,采用全差分输入输出方式和低摆幅时钟控制,并在解码器中先将温度计码转换成格林码,再将格林码转换成二进制码,有效地抑制了由比较电路产生的亚稳定性.仿真结果表明,在输入信号为102.539 MHz、5 GS/s采样率下,设计的电路有效比特数达3.74位,积分非线性和微分非线性分别小于0.255 LSB和0.171 LSB,功耗小于65 mW.     

2Gbps GaAs单片4bit数模转换器的设计与实现

详述了单片超高速2G bps G aA s 4b it数模转换器(DAC)的设计、制造及测试。在南京电子器件研究所标准76 mm G aA s工艺线采用0.5μm全离子注入M ESFET工艺完成流片。芯入输入输出阻抗实现在片50Ω匹配。4 b it DAC的微分非线性(DN L)为±0.22最低有效位(LSB),积分非线性(IN L)为±0.45LSB,达到5.2 b it的转换精度。该单片电路提供差分互补输出,长周期输出特性无漂移。其最高转换速率可达2 G bps,建立时间小于250 ps,电路核心部分功耗为110 mW。     

基于GaAs HBT工艺的3.8GHz带宽4GS/s 4bit超高速ADC

报道了一种4GS/s 4bit超宽带（UWB）模数转换器（ADC）芯片,采用1.4um发射级宽度、2层金属布线的InGaP/GaAs HBT工艺实现。该芯片采用折叠内插架构来最小化其面积和电路规模。为了消除折叠内插电路中的偶发错误码,该ADC采用了一种新颖的比特同步电路。实测结果表明,其在4GS/s采样率下具有3.8GHz的模拟带宽和2.6GHz的有效精度带宽（ERBW）,在2.6GHz输入带宽内ADC的有效位数大于3.4bit,在4GHz输入带宽内有效位大于3bit。在6.001GHz输入并将输入功率提高4dB后,有效位仍然高达3.49bit,表明该ADC可采样的频率范围包含从第一到第三奈奎斯特区（DC~6GHz）。该芯片的DNL和INL在4GS/s下均小于±0.15LSB,总面积为1.45×1.45 mm2,总功耗为1.98W。     

一个低电压低功耗10位30MS/s流水线A/D转换器

实现了一个10位精度,30MS/s,1.2V电源电压流水线A/D转换器,通过采用运放共享技术和动态比较器,大大降低了电路的功耗。为了在低电源电压下获得较大的摆幅,设计了一个采用新颖频率补偿方法的两级运放,并深入分析了该运放的频率特性。同时还采用了一个新的偏置电路给运放提供稳定且精确的偏置。在30MHz采样时钟,0.5MHz输入信号下测试,可以得到8.1bit有效位的输出,当输入频率上升到60MHz(四倍奈奎斯特频率)时,仍然有7.9bit有效位。电路积分非线性的最大值为1.98LSB,微分非线性的最大值为0.7LSB。电路采用0.13μmCMOS工艺流片验证,芯片面积为1.12mm2,功耗仅为14.4mW。     

基于0.13 μm CMOS工艺的14位50 MS/s流水线ADC

设计并实现了一种14位50 MS/s流水线ADC。采用无采保放大器的前端电路和运放共享技术,在达到速度及精度要求的同时降低了功耗。该流水线ADC采用0.13 μm标准CMOS工艺实现,芯片尺寸为2.7 mm×2.1 mm。在电源电压为1.2 V、采样速率为50 MS/s、模拟输入信号频率为28 MHz的条件下进行测试。结果表明,该ADC的功耗为91.2 mW,SFDR为82.39 dBFS,SNR为72.45 dBFS,SNDR为71.13 dB,ENOB为11.52 bit,THD为-81.28 dBc,DNL在±1 LSB以内,INL在±3 LSB以内,品质因子FOM为0.62 pJ/step。     

A 1-GS/s 6-bit folding and interpolating ADC in 0.13-μm CMOS

A 1-GS/s 6-bit two-channel time-interleaved folding and interpolating analog-to-digital converter (ADC) is presented in this article. For low voltage applications, input-connection-improved active interpolating amplifiers and cascaded folding amplifiers have been applied. A single front-end track-and-hold (T/H) circuit is used to avoid the sampling-time mismatches between the channels. When supplied with 1.4 V, the circuit achieves signal-to-noise-plus-distortion ratio (SNDR) of 30.74 dB and spurious free dynamic range (SFDR) of 36.91 dB and consumes a power of 66 mW with 500-MHz input and 1-GS/s sampling rate. Differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.57 and 0.81 LSB, respectively. The figure of merit (FoM) is 1.75 pJ/conversionstep. The ADC circuit is prototyped in 0.13-μm CMOS process and occupies a core area of 0.45 mm².     

A 10-bit 200-MHz CMOS video DAC for HDTV applications

This paper describes a 10-bit 200-MHz CMOS current steering digital-to-analog converter (DAC) for HDTV applications. The proposed 10-bit DAC is composed of a unit decoded matrix for 6 MSBs and a binary weighted array for 4 LSB’s, considering linearity, power consumption, routing area, and glitch energy. A new switching scheme for the unit decoded matrix is developed to improve linearity further. Cascade current sources and differential switches with deglitch latch improve dynamic performance. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.3 LSB and 0.2 LSB, respectively. The converter achieves a spurious-free dynamic range (SFDR) of above 55 dB over a100-MHz bandwidth and low glitch energy of 1.5 pVs. The circuit is fabricated in a 0.25 μm CMOS process and occupies 0.91 mm². When operating at 200 M Sample/s, it dissipates 82 mW from a 3.3 V power supply.     

An 80-MS/s 14-bit pipelined ADC featuring 83 dB SFDR

An 80-MS/s 14-bit pipelined analog-to-digital converter (ADC) is presented in this paper. After gain error and offset extraction from prototype measurement, the improved circuit achieves spurious free dynamic range (SFDR) of 82.9 dB and signal-to-noise-and-distortion ratio (SINAD) of 64.1 dB for a 30.5 MHz input, maintained within 6 dB performance deterioration up to 170 MHz input. Differential nonlinearity (DNL) is 0.66 LSB and integral nonlinearity (INL) is 2.5 LSB. Low-jitter clock amplifier and buffers with balanced loads are used to reduce the jitter and skew between different stages. An on-chip voltage reference generator is schemed with low impedance to reduce noise and spurs of reference signals. The ADC is fabricated in a 0.18-μm CMOS process with core area of 3.86 mm², and consumes 518 mW at 1.8 V supply.     

A 9‐Bit 80‐MS/s CMOS Pipelined Folding A/D Converter with an Offset Canceling Technique

A 9‐bit 80‐MS/s CMOS pipelined folding analog‐to‐digital converter employing offset‐canceled preamplifiers and a subranging scheme is proposed to extend the resolution of a folding architecture. A fully differential dc‐decoupled structure achieves high linearity in circuit design. The measured differential nonlinearity and integral nonlinearity of the prototype are ×0.6 LSB and ×1.6 LSB, respectively.     

A 12-b, 150 MHz Sample/s CMOS Current Steering D/A Converter with Gradient Error Compensation

This paper discusses a circuit of 12-b, 150 MHz Sample/s current steering DAC with hierarchical symmetrical switching sequences which will compensate gradient error. The circuit of 12-b DAC employs segmented architecture, the least significant bits (LSB's) steer a binary weighted array, while the most significant bits (MSB's) are thermometer decoded and steer a unary array. The measured differential nonlinearity and integral nonlinearity are ± 0.6 least significant bit (LSB) and ±0.9 LSB, respectively. The output spectrum of the DAC is −63 dB with an input frequency of 30 MHz at 150 MHz conversion rate. The circuit is fabricated in 0.5 μ μm, two-poly two-metal, 5.0 V, mixed-signal CMOS process and occupies 1.27 × 0.96 mm, when operating at 150 MHz Sample/s, it dissipates 91.6 mW from 5.0 V power supply which is much lower than those of [1]. Jinguang Jiang received the M.Sc. degree from Hunan University, Hunan, China, in 1998 and the PhD degree from Hunan University, Hunan, China, in 2003, all in Electrical Engineering. He is currently a Postdoctoral fellow of Control Science and Engineering in the Faculty of Electrical and Information Engineering at the University of Hunan. His interests are mode distinguish and intelligent system, intelligent signal process, low-power and low-voltage analog integrated circuits design. Bo Wang received the M.Sc. degree from Southeast University, China, in 1998. He is currently as a senior analog design engineer working at Caretta Integrated Circuits, Shanghai, China. His interests are high-speed analog IC design and analog system modeling and analysis. Yaonan Wang received the M.Sc. degree from Hunan University, Hunan, China, in 1991 and the Ph.D. degree from Hunan University, Hunan, China, in 1994, all in Control Theory and Control Engineering. He is currently a Professor and dean of school of Electrical and Information Engineering at the University of Hunan. He is engaged in research of intelligent control, intelligent signal process, image distinguish and its application.     

Low voltage low power 8-bit folding/interpolating ADC with rail-to-rail input range

A new technique for improving the performance of low-voltage folding ADC’s by extending the input range is presented. It is shown that by using both PMOS and NMOS differential pairs in the folding blocks, the overall input voltage range of the ADC can be increased to rail-to-rail. A novel self-adjustment method is also introduced to compensate for the different input–output characteristics of PMOS and NMOS differential pairs. A low voltage 8-bit 80 MSample/s folding/interpolating ADC is then designed and fabricated in a 0.18 μm CMOS process. Operating with a supply voltage as low as 1.2 V, measurements show an INL below ±0.55 LSB, SNDR of 43.5 dB at 80 MHz Sampling Frequency and power dissipation of only 30 mW.     

A 3.3-V 12-b 50-MS/s A/D converter in 0.6-μm CMOS with over80-dB SFDR

A 12-b analog-to-digital converter (ADC) is optimized for spurious-free dynamic range (SFDR) performance at low supply voltage and suitable for use in modern wireless base stations. The 6-7-b two-stage pipeline ADC uses a bootstrap circuit to linearize the sampling switch of an on-chip sample-and-hold (S/H) and achieves over 80-dB SFDR for signal frequencies up to 75 MHz at 50 MSample/s (MSPS) without trimming, calibration, or dithering. INL is 1.3 LSB, differential nonlinearity (DNL) is 0.8 LSB. The 6-b and 7-b flash sub-ADCs are implemented efficiently using offset averaging and analog folding. In 0.6-μm CMOS, the 16-mm² ADC dissipates 850 mW     

An 8-bit 200-MSample/s Folding and Interpolating ADC in 0.25 mm2

This article is presented to describe an area-efficient CMOS folding and interpolating analog-to-digital converter (ADC) for embedded application, which is fully compatible with standard digital CMOS technology. A modified MOS-transistor-only folding block contributes to a small chip area. At the input stage, offset averaging reduces the input capacitance and the distributed track-and-hold circuits are proposed to improve signal-to-noise-plus-distortion ratio (SNDR). An INL/DNL of 0.77 LSB/0.6 LSB was measured. An SNDR figure of 43.7 dB is achieved at 4 MHz input frequencies when operated at full speed of 200 MHz. The chip is realized in a standard digital 0.18 μm CMOS technology and consumes a total power of 181 mW from 3.3 V power supply. The active area is 0.25 mm².     

An 8-b 100-MSample/s CMOS pipelined folding ADC

Although cascading reduces the number of folders used in folding analog-to-digital converters (ADCs), it demands wider bandwidth. The pipelining scheme proposed in this work greatly alleviates the wide bandwidth requirement of the folding amplifier. The pipelining is implemented with simple differential-pair folders. The key idea is to use odd multiples of folders with distributed interstage track/holds cooperatively with an algorithm for coding and digital error correction for the nonbinary system. The pipelined folding ADC prototyped using 0.5-μm CMOS exhibits a differential nonlinearity (DNL) of ±0.4 LSB and an integral nonlinearity (INL) of ±1.3 LSB at 100 MSample/s. The chip occupies 1.4 mm×1.2 mm in active area and consumes 165 mW at 5 V     

Low Power High-Speed Neuron MOS Digital-to-Analog Converters with Minimal Silicon Area

Digital-to-analog converts utilizing neuron MOS-transistors were designed. Different DACs were implemented and characterized in order to compare various topologies. Criteria to select structures were low power, fast performance and minimal silicon area. A basic 8-bit version is implemented with only one neuron MOS-transistor and eight capacitors. The silicon area of this D/A converter is only 0.04 mm² and the power consumption is 8.4 mW with conversion speed of 200 MS/s. An enhanced 8 and 10 bit versions utilizing neuron PMOS transistor and some extra circuitry are also proposed and tested. The silicon area of the enhanced 10 bit circuit is only 0.03mm² while the performance is as good as in the case of the basic version. The measured differential nonlinearity is 0.38 LSB and integral nonlinearity is 0.55 LSB for the enhanced 10 bit structure.