国外典型全业务运营商接入网策略分析

国内电信业重组后,我国三大电信运营商均获得“全业务”牌照,拥有固话、移动通信、宽带的业务经营许可。电信业重组将加剧国内电信市场竞争,改变电信市场发展格局不平衡的局面,对运营商而言,意味着即将面临更加激烈的市场竞争和挑战。     

融合趋势下的中国电信重组

5月24日,中国电信运营业进行又一次重组,重组的结果是新的三大运营商全部成为既有移动业务又有固定业务的全业务运营商。而联系到电信业未来的发展趋势看,此次重组顺应了电信业务正在趋于融合的大趋势,而全业务运营,则是电信运营商实现业务融合的最基本的条件。     

日韩移动互联网发展模式研究及对我国的启示

我国移动网经过十几年的快速发展,在传统单一业务上增长乏力的现象已日渐突出。而伴随着互联网产业的崛起,互联网与移动网的融合引起了全球电信运营商的热切关注,电信运营商已纷纷开始涉足移动互联网。2008年,随着原信息产业部并入工业和信息化部,电信业进行重组改革,三大运营商取得各自的3G运营牌照,我国移动互联网必将成为电信业最具发展潜力的方向之一,     

从电信业重组看网络融合

自1996年美国新《电信法》的颁布,全球电信业迎来了以“企业重组”为标志的电信业发展新浪潮．这次浪潮的主要特点是通过企业重组来整合和提升电信企业的竞争能力．使企业朝着全业务经营的趋势发展。随着中国电信业第三次重组方案的公布．重组后的三家电信运营商都将拥有移动和固定网络．这使他们完全具备全业务经营的能力。     

迎接全业务运营时代——新媒体革命：拉动消费需求加速产业转型

当前在全球电信市场,融合已成大势所趋。在中国,3G更是渐行渐近,随着电信重组的尘埃落定,中国电信业即将迈向全业务竞争时代,电信运营商的业务发展战略也将随着融合和3G的到来而重新确立。由于各运营商原有业务基础不同,重组后的业务组成也存在差异,因此,重组后的各运营商在融合业务的发展战略上也不尽相同,如何提升全业务经营能力,已成为运营商进一步发展过程中关注的热点。     

融合创造价值——上海贝尔阿尔卡特通信展唱响融合主旋律

融合是电信业的必由之路从电信运营商的转型趋势以及全球电信业的合并,可看到"融合"思维已经渗入到整个电信产业。融合是运营商实现业务融合的资源整合,是企业满足客户综合化信息需求的一种市场反应,是企业应对市场竞争的必然行为。融合是电信业可持续发展的出路。融合与电信转型不是简单的选择,而是电信业面对电信宏观大环境的变化和业务技术重大变革的惟一出     

举荐融合良策 惠普电信周打造重组IT航向标

近日,由中国惠普有限公司举办的针对国内电信运营商重组的“惠普电信周”系列研讨活动在北京拉开帷幕。随着电信重组序幕拉开,中国的运营商全面跨入全业务运营时代。面对电信业的重大变革,惠普为中国移动、中国联通、中国电信分别举办了专场研讨会,此举旨在帮助运营商在短时间内以平滑的方式完威重组转换,高效完成业务、支撑和IT基础设施的全面融合,取得市场先机。     

数据挖掘在电信客户关系管理中的应用

随着中国电信的改革和重组,中国电信业的市场环境发生了根本性的变化,中国电信服务市场逐步形成了从最初个别运营商垄断市场到数家大运营商主导、多家小运营商参与、新运营商不断加人的电信市场竞争的新格局。我国加入WTO后,我国电信市场将逐步对外开放,一些世界级的电信巨头将通过多种手     

产业融合下的电信业发展趋势与展望

随着产业融合趋势的加剧,传统电信生态系统和产业价值链正在重构,并对电信运营商造成深远影响。文章系统梳理了产业融合几种典型业态的发展现状,深入分析了产业融合对传统电信业提出的挑战与机遇,并以此为基础展望未来电信业的发展趋势以及传统电信运营商的转型升级之路。     

后重组时代中国电信业的输赢格局

中国正在进行的电信重组引起了全球的广泛关注.近日,美国商业周刊发表了专门的评论文章,探讨中国电信业的未来格局,尤其针对国外运营商的中国未来进行了分析.作者认为,正在进行的电信重组势必影响电信业的整体格局.就国内运营商而言,各家力量将重新分配.重组有望引发在网络设备领域以及3G终端领域的大笔投资,而国外运营商希望能抓住机会加大在中国市场的投资力度,不过,现实却或许让愿景打些折扣.     

Noise behaviour of the m.o.s.f.e.t. at v.h.f. and u.h.f.

The optimum noise figures of an m.o.s.f.e.t. at u.h.f. and at pinch-off are calculated using a simplified equivalent circuit. The noise parameters are also determined experimentally. Theory and experiment are shown to be in good agreement. Noise parameters of the m.o.s.f.e.t. for the frequency range 0.1?0.8 GHz are given.     

U.H.F. low-noise GaAs m.e.s.f.e.t. amplifier for colour t.v. broadcasting translator

Low-noise amplifiers for u.h.f. colour t.v. broadcasting translator use have been successfully developed by using 1 ?m gate GaAs m.e.s.f.e.t.s. The obtained performances revealed that a GaAs m.e.s.f.e.t. has low-noise and low intermodulation distortion characteristics, even in the 500?800 MHz frequency range, compared with a Si bipolar transistor.     

Current-kink noise of n-channel enhancement e.s.f.i.-m.o.s. s.o.s. transistors

An experimental study of the low-frequency-noise properties of n-channel epitaxial silicon films on insulator m.o.s. s.o.s. transistors has been performed. The measurements show an excessive noise contribution at drain voltages corresponding to the current-kink effect for temperatures ranging from 4.2 to 300 K.     

Switching in m.i.s.m. and m.i.s.i.m. structures

Switching has been observed in metal?thin-insulator?n-p+ structures, where the thin insulator is SiO2, or polycrystalline silicon. In this letter two alternative structures are discussed in which the n-p+ junction is replaced by a Schottky barrier. In the second device proposed two thin-insulator structures back-to-back are shown to exhibit bidirectional switching.     

Power m.o.s.f.e.t. linear h.f. amplifiers

N-channel silicon m.o.s. transistors for h.f. power applications have been fabricated which are optimised for linear amplification. These devices exhibit 2 W output power and 11 dB power gain at 630 MHz in class-A operation. The intercept point for third-order intermodulation distortion is 48dBm, which is considerably more than the same data obtainable with bipolar transistors.     

Wide-range monolithic bipolar?j.f.e.t. c.c.o.

A new monolithic current-controlled oscillator (c.c.o.) has been realised in a j.f.e.t.-bipolar technology. Its main advantages are a highly-linear seven decade frequency range and easy temperature compensation for frequency and output voltage.     

GaAs m.a.o.s.f.e.t. memory transistor

A new non-volatile memory device is reported. This device is a GaAs m.o.s.f.e.t. with charge storage in the gate in which is a double oxide structure of aluminium oxide and GaAs native oxide, both oxides are grown anodically. The fabrication of the device is described and the results of initial measurements on the charging and charge retention properties are presented.     

New n-channel m.o.s.f.e.t.s

By using plasma c.v.d. and lift-off, an n-channel m.o.s.f.e.t. with effective channel length of 0.4 ?m has been fabricated. Its main fabrication processes and obtained electrical characteristics are described.     

Subthreshold behaviour of e.s.f.i.-s.o.s. transistors

Theoretical and experimental results are presented which illustrate the influence of various parameters on the subthreshold behaviour of e.s.f.i.-s.o.s. transistors. The numerical analysis accounts for the thin silicon film and the existence of a second interface. A comparison is made with a corresponding bulk transistor, furthermore, between a two- and a one-dimensional analysis of e.s.f.i.-s.o.s. m.o.s.t. The agreement for real cases is found to be excellent.     

n-channel inversion-mode InP m.i.s.f.e.t.

Capacitance/voltage and m.i.s.f.e.t. inversion-mode f.e.t. data are reported for p-type InP. It is shown that the surface of this material appears to be inverted at zero gate bias and that good inversion-mode (normally-off) device behaviour is possible.