基于蒙特卡罗方法的离子束溅射熔融石英、硅、金和铜行为特征规律仿真研究

采用蒙特卡罗方法研究了在不同溅射参数和材料模型下，溅射产额、损伤密度分布和纵向能量损伤分布等溅射特征参量对离子束溅射作用效果的影响。通过SRIM-2013软件的粒子跟踪和物理统计结果，分析了离子束初始能量、入射角度、离子种类和材料类型对表面溅射效果和能量沉积的影响规律，研究了表面损伤分布规律与溅射参数和溅射产额的关系。结果表明：85°的束源倾角设置可促进级联粒子密度集中和密度峰值群向表面移动分别达到2.8×108 atom/cm2和3×10-10 m，平均能量损失减小45.6%, Ar+溅射产额提高4.7倍；声子和电离产生大量的能量损失抑制了溅射产额的提高，两种能量损失占总损失比在0°入射时分别可达69%和30%。     

Monte—carlo法探讨扫描电镜中绝缘样品的负荷问题

本文以扫描电镜中样品负荷问题为背景。用Monte-Carlo法模拟了绝缘样品PMMA(C_5H_8O_2)在不同入射能量Ep(0.5-20Kev)和入射角θ_0(0°～45°)在扫描电镜中的二次电子产生和逃逸过程。模拟中考虑了背散射电子和二次电子的再激发对总二次电子产额的贡献,得到样品出射电子数与入射电子数之比δ的变化规律。模拟结果表明,δ随Ep的增加而下降、并随θ_0增加而增加。当Ep=0.5Kev,θ_0=45°时,δ=0.793,即接近电荷平衡。     

Ce∶KNSBN光折变光纤两波耦合特性研究

研究了掺铈钾钠铌酸锶钡 (Ce∶KNSBN)光折变光纤“扇”特性及两波耦合的基本特性。通过实验发现 ,当入射光的入射角为 8°左右时 ,“扇”最小 ,这与块状晶体有根本的不同。在信号光与抽运光的入射夹角 2θ小于 11°时 ,两波耦合增益随入射夹角的增大而增大 ,而当入射夹角大于 11°时 ,两波耦合增益随着入射夹角的增大而迅速减小。给出了在各个不同的入射夹角下 ,两波耦合增益中透射的信号光的时间特性曲线。两波耦合增益随信号 抽运比的增加而增加 ,在入射夹角为 8° ,信号 抽运比为 1∶10 0 0时 ,两波耦合增益达到了 77,比块状晶体相应条件下提高了 4倍。用两波耦合的理论公式对增益随信号 抽运比的实验数据进行了拟合 ,二者相符     

溅射过程的理论推导

本文通过引入溅射模型，对溅射过程进行了推导与计算，得到溅射速率的解析式，与Ｒｏｌｅ等人所得公式比较表明，本文所得公式能更好地述溅射过程，并且表明，选择合适的入射离子参数（入射能量和入射角）可以减小溅射损伤。     

周期层数及入射角对一维光子晶体带隙的影响

一维光子晶体基本周期的介质折射率取n2=1.5和n3=2.5,采用传输矩阵法,通过For-tran编程进行数值计算,分别得到了不同周期层数(N)及不同入射角度(θ1)下的一维光子晶体透射谱;从光子带隙频宽、带隙中心位置及带隙中心的透射率值等方面,分析并讨论了周期层数及入射角对一维光子晶体带隙特性的影响。结果表明,随着N值的增加,带隙中心的透射率值迅速减小,当N增至16层时,一维光子晶体基本形成;此外,在0°～85°内,随着入射角度的增加,带隙低频值向左移动,高频值向右移动,带隙宽度呈增加的趋势,入射角不影响光子带隙的中心位置。     

低能离子束诱导蓝宝石自组织纳米结构与光学性能研究

针对蓝宝石有序纳米结构的制备,使用微波回旋共振离子源,研究了低能Ar+离子束在不同参数下刻蚀蓝宝石(C向)表面形成的自组织纳米结构及其光学性能。结果表明,当离子束入射能量为1200 e V、束流密度为265μA/cm2时,随着入射角度的增大(5°~40°),样品表面出现点状自组织纳米结构,该结构的有序性较差;当增加角度到45°时,样品表面出现了有序的条纹结构,在45°~70°时,增大离子束入射角度,样品表面沿离子束入射方向出现柱状结构,而在垂直于离子束入射方向,样品表面呈现出有序的条纹结构;随着离子束入射角度的增加,样品表面的纳米条纹结构的特征波长先减小(45°~60°)后逐渐增大(60°~70°),在60°附近,特征波长达到极小值,约为21.1 nm。在70°~75°时,样品表面呈现纵横比较大的纳米点状结构。增加离子束的作用时间,样品表面的纳米结构纵向尺寸增大,有序性增加,但纳米结构横向周期基本不变。有序纳米结构的出现使得样品的透射率得到提升。自组织结构变化是溅射粗糙化和表面驰豫机制相互作用的结果。     

离子束溅射淀积铬薄膜沉积速率的分布

本文介绍采用石英晶体测厚仪测得铬靶不同方位上的溅射沉积速率,试验结果表明不同方位上的沉积速率为正态分布,其表达式为 y=66exp-(X-74.18)~2/2×2×33.93~2 当溅射入射角为45°时,其分布峰值在74.18°,不在45°的反射方向上。而溅射沉积速率与接收距离平方成反比,其表达式为 y=-45.8+19686.3(1/X)-249430(1/X~2)     

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介绍了离子束刻蚀的二次效应对图形轮廓以及离子束刻蚀入射角对图形侧壁陡度的影响。利用能量为450eV,束流密度为80mA/cm2的离子束分别以0°、15°、30°、45°和60°的刻蚀入射角对石英基片进行了刻蚀,得到了不同离子束入射角度下的图形侧壁的陡直情况。从电镜照片中可以看出,以30°入射角刻蚀出的图形质量最佳。结果表明,在离子束刻蚀中,选择适当的离子束入射角可以提高图形侧壁陡度,改善图形质量。因此对于离子束刻蚀来说,为控制二次效应,保证图形质量,必须重视离子束入射角的选择。     

入射角度对一维光子晶体禁带的调制研究

利用特征矩阵法,分别研究了不同偏振方式的波入射到光子晶体时,光子晶体的禁带随入射角度的变化.结果表明:不论是TM波入射还是TE波入射,随着入射角度的增大,光子晶体的带隙都向短波方向移动;TM波入射时,光子晶体的带隙随入射角度的增大而减小,而以TE波入射光子晶体时,随着入射角度的增大,光子晶体的带隙逐渐增大.     

SIMS测试中的一次离子束研究

介绍了二次离子质谱仪(Secondary Ion Mass Spectrometry,SIMS)测试中一次离子束的各参数对测试的影响。研究发现,离子源的选择由分析元素决定,一次束能量决定深度分辨率,入射角度影响溅射产额,一次离子束的束流密度影响溅射速率。因此,在SIMS测试中,需要根据分析目的调节相应参数,以获得较好的分辨率。     

Monte Carlo simulation for the sputtering yield of Si3N4 thin film milled by focused ion beams

The sputtering yield of the Si3N4 thin film is calculated by Monte Carlo method with different parameters. The dependences of the sputtering yield on the incident ion energy, the incident angle and the number of Gallium （Ga） and Arsenic （As） ions are predicted. The abnormal sputtering yield for As at 90 keV occurs when the incident angle reaches the range between 82° and 84°.     

Glancing-angle ion bombardment for modification and monitoring of semiconductor surfaces

Using glancing-angle ion bombardment for surface modification rather than conventional near-normal incidence ions has the advantages of reducing damage and implantation projected ranges, reducing channeling, reducing sputtering, and preferentially removing surface asperities leading to flat surfaces. The effects of bombardment conditions on the surface morphology and perfection of GaAs (001), InP (001), and Si (001) surfaces are reported. Air-exposed surfaces were cleaned and smoothened to near atomic flatness without damage under optimal conditions. Sputtering yield, measured using film thicknesses and changes in reflection high-energy electron diffraction oscillations, decreased with decreasing incidence angle. The low sputtering yield and minimal damage make a glancing-angle geometry ideal for real-time characterization by ion scattering spectroscopy. Surface composition measurements on single monolayers of InAs on GaAs showed that the glancing-angle Ar beam did not measurably change the In coverage over relatively long times. A new ion beam monitoring technique was also developed that utilizes the advantages of glancing-angle ions. Specular scattering of 3 keV He ions was observed for incidence angles of 2–6° from GaAs (001). Oscillation in the specularly scattered ion current during GaAs growth were observed with periods corresponding to monolayer growth times. The oscillations allow a simple quantitative interpretation based on scattering by adatoms and step edges.     

Simulation study on image contrast and spatial resolution in helium ion microscope

We performed Monte Carlo simulation of helium (He) ion induced secondary electron (SE) emission in order to compare the secondary electron image characteristics between He and gallium (Ga) scanning ion microscopes (SIM) and scanning electron microscope (SEM). For 10-50 keV He ion bombardment SE yield increases gradually with increasing the atomic number, Z2, of the target, as well as for the electron bombardment. However, for 30 keV Ga ion bombardment, SE yield shows an opposite Z2 dependence. The calculated SE yield is much larger than that for both electron and Ga ion bombardment. The incident angle dependence of the SE yield approximately obeys the inverse cosine law even at high angles of 85 degrees and more. On the other hand, for electron bombardment, the incident angle dependences are much weaker for low energy and high Z2. These indicate that the image contrast on He-SIM is clearer than those of SEM. Among the electron excitations by incident He ions, recoiled target atoms and excited electrons, the first one having narrow excitation volume dominates the SE yield, so that the spatial image resolution in SIM using zero-diameter He beams with the energies of 10-50 keV is prospected to be smaller or better (<0.1 nm) than for 30 keV Ga ion and 1 keV electron beams.     

蓝宝石表面纳米结构随杂质靶距离的演化

使用微波回旋共振离子源刻蚀蓝宝石（C向）表面，引入金属不锈钢杂质，研究了不同靶距处蓝宝石表面自组织纳米结构的演化规律及光学性能。采用原子力显微镜来观察样品表面的形貌变化，Taylor Surf CCI 2000白光干涉表面测量仪测量蓝宝石样片表面的粗糙度；选择X射线光电子能谱对样品表面的化学成分进行了表征。实验结果表明:当离子束能量为1000 eV，束流密度为487 μA/cm2，入射角度为65°，刻蚀时间为60 min，蓝宝石样片与杂质靶距离从1 cm增加到4 cm时，样片表面出现岛状结构并逐渐演变为连续的条纹结构。同时，自组织纳米结构随靶距增加，有序性增加，纵向高度逐渐减小，空间频率基本不变。刻蚀后样品表面的金属杂质残留很少，微结构的形成对蓝宝石具有增透作用。在离子束溅射过程中，岛状结构的出现促进了样品表面条纹纳米结构的生长，破坏了纳米结构的有序性。     

Monte Carlo simulation for the sputtering yield of Si3N4 thin film milled by focused ion beams

The sputtering yield of the Si3N4 thin film is calculated by Monte Carlo method with different parameters. The dependences of the sputtering yield on the incident ion energy, the incident angle and the number of Gallium (Ga) and Arsenic (As) ions are predicted. The abnormal sputtering yield for As at 90 keV occurs when the incident angle reaches the range between 82°and 84°.     

全反射镜结构对AlGaInP发光二极管发光效率的影响

采用计算机模拟的方法,计算了SiO2/Al,ITO/Al,SiO2/Au和ITO/Au全方位反射镜结构和分布式布拉格反射镜的反射特性.用PECVD和溅射设备制作了Glass/SiO2/Au结构,用LP-MOCVD生长了DBR结构,并测量了其反射特性,实验与模拟结果基本吻合.从模拟和实验的结果得到,SiO2/Au ODR结构在波长为630nm的垂直入射光下反射率很高,达到91%以上.对于不同角度的入射光,SiO2/Au在20°～85°都有很高的反射率,远高于DBR结构的反射率.在实际器件测试中,ODR结构的AlGaInP红光LED比无DBR结构的LED提高了115%,比DBR结构的LED提高了28%.这说明,ODR结构与DBR结构相比可以大幅提高红光LED的出光效率.     

差压式流量传感器的数值模拟与优化设计

利用RNGk-ε模型对100mm口径锥体差压式流量传感器进行了CFD数值模拟实验,其等效直径比β值分别为0.50,0.65,0.85,前锥角分别为40°,45°,50°,后锥角分别为120°,130°,140°,共27种锥体组合。实验结果表明:β值越大,流出系数越小,且流出系数更易受雷诺数的影响;β值相同时,前锥角对流出系数具有较大影响,且较大的前锥角可减弱雷诺数对流出系数的影响;后锥角对流出系数的线性度具有一定程度的影响。     

XPS Investigation on Surface and Interface Electronic States of Alq3／ITO

The surface and interface electronic states of tris-(8-hydroxyquinoline)aluminum(Alq3)/indium-tin oxid(ITO)were measured and analyzed by X-ray photoelectron spectroscopy(XPS).The results indicated that, in Alq3 molecule,the binding energy(Eb)of Al atoms is 70.7eV and 75.1eV,corresponding to Al(O)and Al(Ⅲ）,respectively;The binding energy of C is 285.8eV,286.3eV,and 286.8eV,corresponding to C of C-C group,C-O,and C-N bond,respectively,N is the main peak locating at 401.0eV, corresponding to Natom of C-N=C.Oatoms mainly bond o H atom,with the binding energy of 533.2 eV.As the sputtering time of Ar^ ion bearn increases,Al2p,C1s,N1s,O1s,Ind3d5/2 and Sn3d5/2 peaks slightly shift towards lower binding energy,and Al2p,C1s and N1s peaks get weaker,which contributed to diffusing the oxygen,indium and tin in ITO into Alq3 layr.     

Deposition Characteristics of AlN Thin Film Prepared by the Dual Ion Beam Sputtering System

In this experiment, a radio frequency dual ion beam sputtering (DIBS) system was used to prepare aluminum nitride (AlN) films with a bottom Al electrode on a Si (100) substrate. After systematic testing of the processing variables, a high-quality film with preferred c-axis orientation was grown successfully on the Si (100) substrate with an Al target under 700 eV energy flux, N₂/(N₂ + Ar) ratio of 55%, and 4 × 10⁻⁴ torr in vacuum. The characteristics of the deposited AlN thin films were studied by x-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), secondary ion mass spectrometry (SIMS), and electronic spectroscopy for chemical analysis (ESCA). The surface roughness was also measured. It was found that AlN films prepared by DIBS at room temperature are better than those prepared at 300°C, and those prepared with an Al target are better than those prepared with an AlN target. The inferiority of AlN films prepared with AlN targets is due to the AlN bond being broken down by the ion beam source.