共查询到20条相似文献,搜索用时 78 毫秒
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采用高分辨率X射线衍射摇摆曲线、光致发光以及霍尔测试对采用气态源分子束外延方法生长的四元系In-AlGaAs材料性质进行了表征。摇摆曲线结果表明,根据计算数据所生长的InAlGaAs样品与InP衬底基本匹配.光致发光和霍尔测试结果显示随着Al组分的增加,样品的光致发光强度、电子浓度和迁移率均有所下降.样品的三族元素组分由光致发光及X射线衍射实验获得,测试结果与设计值吻合,Al组分的实验设计值与测试结果的关系提供了一种实用的精确控制组分的方法. 相似文献
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研究了退火对α-Si_xC_(1-x):H薄膜红外吸收和光致发光性质的影响.实验结果表明:低温退火使与氢有关的红外吸收和积分发光强度增加;而高温退火使与氢有关的红外吸收和积分发光强度减弱;同时,随着退火温度升高,光致发光光谱的峰值能量位置移向低能.文中对退火引起红外吸收和光致发光性质的变化机理进行了讨论。 相似文献
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在新型空穴传输聚合物聚TPD(PTPD)中掺杂电子传输有机小分子荧光染料Rubrene制成薄膜器件.考察了影响聚合物掺杂小分子薄膜器件发光性能的因素.实验表明,通过在器件中掺杂,可以控制器件所发光的颜色.研究了PTPD掺杂Rubrene分子薄膜的电致发光光谱和光致发光光谱.由实验可知.在光致发光中存在从PTPD向Rubrene的能量传递和电荷转移,而电致发光则存在从PTPD向Rubrene的能量传递和Rubrene分子对载流子的俘获.即掺杂器件的发射机制为载流子陷阱和Forster能量转换过程的共同作用. 相似文献
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在新型空穴传输聚合物聚TPD(PTPD)中掺杂电子传输有机小分子荧光染料Rubrene制成薄膜器件.考察了影响聚合物掺杂小分子薄膜器件发光性能的因素.实验表明,通过在器件中掺杂,可以控制器件所发光的颜色.研究了PTPD掺杂Rubrene分子薄膜的电致发光光谱和光致发光光谱.由实验可知.在光致发光中存在从PTPD向Rubrene的能量传递和电荷转移,而电致发光则存在从PTPD向Rubrene的能量传递和Rubrene分子对载流子的俘获.即掺杂器件的发射机制为载流子陷阱和Forster能量转换过程的共同作用. 相似文献
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InGaAs-GaAs应变量子阱的光学性质 总被引:1,自引:0,他引:1
本文详细研究了In_xGa_(1-x)As/GaAs应变量子阱的光学性质.用一维方势阱模型和应变对能带结构的影响解释了荧光发射峰.观察到应变对热电子弛豫过程的影响,并发现用光荧光实验确定的临界厚度基本满足力学平衡模型. 相似文献
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T. S. Moise L. J. Guido J. C. Beggy T. J. Cunningham S. Seshadri R. C. Barker 《Journal of Electronic Materials》1992,21(1):119-124
Data presented here demonstrate that strained-layer (111)B Al0.15Ga0.85As-In0.04Ga0.96As quantum wells exhibit unique optical properties when compared to otherwise identical (100) oriented strained layers. Photoluminescence
measurements identify a strain-induced electric field of order 6.7 Vμm-1 within the (111)B quantum well that is not present for the (100) case. Photoluminescence excitation spectroscopy measurements
show that the heavy-hole to light-hole energy band splitting is approximately 7 meV larger for the (111)B structure than for
the (100) structure.
Howard Hughes Doctoral Fellow
IBM Graduate Fellow 相似文献
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Guangyou Yu Xiwu Fan Jiying Zhang Baojun Yang Dezhen Shen Xiaowei Zhao 《Journal of Electronic Materials》1998,27(9):1007-1009
Photoluminescence spectra of asymmetric double-quantum-well structure are studied in this paper. We show the excitation power
dependence of exciton tunneling. Due to the different tunneling time of electrons and holes, space-charge effect is observed. 相似文献
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《Materials Science in Semiconductor Processing》2005,8(4):531-535
Photoluminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phosphide ambiences. Noticeable PL emissions related with thermally induced defects have been detected in undoped InP annealed in iron phosphide ambience. Origins of the PL emissions have been discussed. 相似文献
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We report enhanced color purity of hybrid organic-inorganic light emitting diode based on polyfluorene-CdSe/ZnS quanum dot (QD) blend as emissive layer. Effect on structural, optical and electrical properties of different doping concentration (0–100 wt.%) of QD in polyfluorene (PFO) was studied. Photoluminescence and electroluminescence spectra confirm the β-formation of PFO by incorporation of CdSe/ZnS QD. Photoluminescence (PL) of blend film was also compared with another method based on one dimensional photonic band gap (1D-PBG) structure that has been used for color purity. In both the cases, that is, QD doped device and 1D-PBG based structures the narrowing of PL spectra was observed. But the fabrication of QD-doped device for color purity is easier than fabricating 1D-PBG structure using multilayer dielectric coating. The present study might find application for QD based color displays, where color purity is an important requirement. 相似文献
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Pape I.J. Li Kam Wa P. David J.P.R. Claxton P.A. Robson P.N. 《Electronics letters》1988,24(19):1217-1218
The disordering of Ga0.47In0.53As/InP MQW layers by the diffusion of sulphur is reported for the first time. Photoluminescence measurements indicate that this results in a larger bandgap material. SIMS profiles show that intermixing of both group III and V elements occurs between wells and barriers 相似文献
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Pottier P. Seassal C. Letartre X. Leclercq J.L. Viktorovitch P. Cassagne D. Jouanin C. 《Lightwave Technology, Journal of》1999,17(11):2058-2062
We demonstrate InP-based triangular and hexagonal two-dimensional (2-D) planar photonic bandgap (PGB) crystal-based microcavities, positioned on a suspended membrane. Photoluminescence spectra of the structure clearly show well-resolved cavity modes, whose structure depends on the cavity shape. Q factors from 200 up to at least 900 are derived 相似文献
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Alla Petukhova Andrew S. Paton Zhixiang Wei Ilya Gourevich Selvakumar V. Nair Harry E. Ruda Alexander Shik Eugenia Kumacheva 《Advanced functional materials》2008,18(13):1961-1968
Optically active nanostructures comprised of polymer multilayer microspheres surrounding semiconductor quantum dots are studied. Comparative analysis of the optical properties of the microspheres with four alternating layers with different refractive indices is performed. Photoluminescence and extinction characteristics of the microspheres are determined by the dimensions, internal structure, and the average refractive index of the particles. 相似文献
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Photoluminescence techniques have been used to detect and characterise the ~ 1.40 eV emission band in an Mn-doped GaAs MBE epilayer and heated semi-insulating Cr-doped GaAs. An activation energy ~ 110 ± 5 meV is obtained from the temperature quenching of the emission intensity, and evidence indicated that physical movement of the Mn atom is responsible for type conversion. 相似文献