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1.
激光制备多层薄膜及铁电性能的研究   总被引:3,自引:2,他引:1  
李兴教  安承武 《压电与声光》1997,19(1):54-56,60
利用脉冲准分子激光淀积(PLD)方法,在Si基片上制备了BIT/Si〔100〕、PZT/BIT/Si〔100〕和BIT/PZT/BIT/Si〔100〕铁电薄膜。用XRD分析了多层铁电薄膜的晶相结构;用Sawyer-Tower电路研究了这些单层和多层铁电薄膜的铁电性能。结果表明,单层BIT的矫顽场Ec为4kV/cm,剩余极化强度为3.4μC/cm2;PZT/BIT的矫顽场Ec为82kV/cm,剩余极化强度Pr为36μC/cm2;BIT/PZT/BIT夹层铁电薄膜的矫顽场Ec为57kV/cm,剩余极化强度Pr为29μC/cm2。最后讨论了薄膜的铁电性能与多层结构的关系  相似文献   

2.
电化学还原法制备PZT薄膜   总被引:1,自引:0,他引:1  
谢崇伟  朱嘉林 《压电与声光》1997,19(4):265-267,272
以Pb(NO3)2、TiCl3为电解质,利用电化学还原方法在不锈钢基底上制备了钙钛矿型PZT薄膜,并对薄膜样品性能进行了测试,其介电系数接近1300,介质损耗0.6,剩余极化强度12μC/cm^2,矫顽场强63kV/cm。  相似文献   

3.
CSD法制备PZT/Bi2Ti2O7薄膜的研究   总被引:1,自引:0,他引:1  
用化学溶液分解(CSD)法制备Pb(Zr0.5Ti0.5)O3(PZT)和Bi2Ti2O7薄膜,利用X-射线衍射技术研究了以Bi2Ti2O7为籽晶层的PZT薄膜的结晶性。实验结果表明,以高(111)取向的Bi2Ti2O7为籽晶层可获得高结晶性的PZT薄膜,在750℃退火10min的PZT/Bi2Ti2O7薄膜具有单一的钙钛矿相。  相似文献   

4.
在已有的以夫机锆盐为原料,用Sol-Gel方法制备硅基Pb(Zr0.53Ti0.47)O3(PZT)铁电薄膜的工艺基础上,地制备出PbTiO3/Pb(Zr0.53Ti0.47O3/PbTiO3(PT/PZT/PT)夹心式新结构。由于采用了这种闪心式结构,使得PZT铁电薄膜的退火温度由原来的900℃降到了700℃。通过实验检验了新结构的铁电和介电性能。发现夹心结构有助于提高PZT薄膜的品质。  相似文献   

5.
多层结构铁电薄膜的I—V特性性能的研究   总被引:3,自引:0,他引:3  
为FRAM、FFET和FDM的实际应用研究,提出了多层结构铁电薄膜的设计思想,实际制备了M/BIT/p-Si、M/PZT/BIT/p-Si、M/BIT/PZT/BIT/p-Si三种结构铁电薄膜,并测量了它们的I-V特性曲线。结果表明,夹层结构铁电薄膜M/BIT/PZT/BIT/p-Si漏电流密度J最小,在500nm厚时J+(+3V)约2.8×10-10A/mm2,J-(-3V)约1.2×10-12A/mm2优于单层和双层结构铁电薄膜的结果。  相似文献   

6.
采用射频溅射法制备了PZT铁电薄膜材料,测量了薄膜材料的介电常数和电滞回线,分析了薄膜的成分。XRD分析结果表明,溅射形成的PZT薄膜的结构和铁电性能强烈依赖于成膜工艺中的衬底温度。薄膜的居里点为250℃左右,靶的组成以Pb1.10(Zr0.52Ti0.48)O3为宜。  相似文献   

7.
脉冲激光淀积高电流密度的YBCO超导带材   总被引:2,自引:1,他引:1  
采用脉冲激光加辅助离子源的方法在长为6.0cm的NiCr合金基带上制备0.13μm厚的Y-ZrO2(YSZ)隔离层,再用脉冲激光在YSZ/NiCr带上制备1.5μm厚的YBa2Cu3O7-x超导厚膜形成YBCO/YSZ/NiCr超导带材。实验测得在77K,0Tesla下其临界电流密度为8.75×104A/cm2,超导转变温度为88.6K。  相似文献   

8.
脉冲准分子激光PZT薄膜的制备   总被引:5,自引:0,他引:5  
本实验采用脉冲准分子激光沉积(PLD)法,在193nm波长,5Hz频率,4J/cm2能量密度条件下,分别在Si(100)和SiO2/Si衬底上成功地沉积Pb(Zr,Ti)O3(PZT)薄膜,并在不同的条件下对PZT薄膜进行退火处理。用XRD,RBS,ASR等方法分别测量了薄膜的结构、组份和厚度。  相似文献   

9.
我们在具有Y稳定的ZrO_2(YSZ)层的蓝宝石上获得高质量的YBa_2Cu_3O_7(YBCO)高温超导薄膜。在零磁场下,77k时,其临界电流密度达到1.6×10 ̄6A/cm ̄2。本文确定了多层膜超导材料的取向关系。YBCO膜的(001)面平行于YSZ过渡层的(100)表面。YSZ层厚为20nm。并且,由于Ba自YBCO层的外扩散,YSZ层含有Ba。尽管蓝宝石与YSZ层间的晶格铅配很大,由于YSZ层具有[100]择优取向,仍能获得准单晶的YBCO薄膜。在YBCO薄膜中,观察到均匀分布的、微小尺寸的Y_2BaCuO_5(211相)沉淀粒子,它们也有利于提高临界电流密度。  相似文献   

10.
(Pb,La)TiO3铁电薄膜的制备及热释电性能研究   总被引:2,自引:1,他引:1  
讨论了PLT15铁电薄膜的溶胶-凝胶制备技术,及PLT薄膜的结构和电性能研究。结果表明,在Si基片上成功地生长出钙钛矿型结构多晶铁电薄膜,在(111)Pt/Ti/SiO2/Si上外延生长出(111)PLT15铁电薄膜。溶胶-凝胶制备的PLT15铁电薄膜具有优良的热释电性能,其热释电系数p为5.25×10-8Ccm-2K-1,电压响应率优值FV达到0.78×10-10Ccm/J,探测率优值Fm为1.13×10-8Ccm/J,适于制备热释电红外探测器  相似文献   

11.
We have fabricated high-quality <001> textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (00l)Si with interposing <001> textured YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ, = 248 nm, τ = 20 nanosecs). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using x-ray diffraction, high-resolution transmission electron microscopy, and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9 × 10−4 Torr) at 775°C on (001)Si substrate having <001>YSZ // <001>Si texture. The YBCO thin films were deposited in-situ in oxygen ambient (200 mTorr) at 650°C. The temperature and oxygen ambient for the PZT deposition were optimized to be 530°C and 0.4-0.6 Torr, respectively. The laser fluence to deposit this multilayer structure was 2.5-5.0 J/cm2. The <001> textured perovskite PZT films showed a dielectric constant of 800-1000, a saturation polarization of 37.81 μC/cm2, remnant polarization of 24.38 μC/cm2 and a coercive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.  相似文献   

12.
用磁控溅射法在Pt/Ti/SiO2 /Si衬底上制备了PbZr0 .52 Ti0 .4 8O3(PZT)薄膜 .XRD结果表明经过退火后的PZT薄膜呈现多晶结构 .通过红外椭圆偏振光谱仪测量了λ为 2 .5~ 12 .6 μm范围内PZT薄膜的椭偏光谱 ,采用经典色散模型拟合获得PZT薄膜的红外光学常数 ,同时拟合得到未经处理的PZT薄膜和退火后PZT薄膜的厚度分别为 45 4.2nm和 45 0 .3nm .最后通过拟合计算得到结晶PZT薄膜的静态电荷值为 |q|=1.76 9± 0 .0 2 4.这说明在磁控溅射法制备的PZT薄膜中 ,电荷的转移是不完全的 .  相似文献   

13.
PZT,PT干凝胶的制备及应用   总被引:2,自引:1,他引:1  
采用减压抽滤的方法成功制备了Pb(Zr0.5Ti0.5)O3,PbTiO3干凝胶,并用STA449C差热分析仪表征了干凝胶的性能。干凝胶溶解后得到了性能优良的PZT薄膜和PZT/PT复合膜。采用X射线衍射技术表征了两种薄膜的微观结构及成相特征。薄膜的介电性能及漏电流性能由HP4284ALCR及Keithley6517A来确定。试验结果表明:用减压抽滤得到的干凝胶的方法,可以彻底解决溶胶凝胶中先体存放的问题,得到的铁电薄膜有优良的介电与铁电性能。PZT的相对介电常数与介质损耗分别为424,0.033,PT作为中间层的复合膜的相对介电常数和介质损耗分别为261,0.014;PT薄膜可以调整和改进PZT薄膜的性能,使之达到应用于热释电探测器的要求。  相似文献   

14.
用脉冲激光沉积法在(110)取向的SrTiO3(STO)单晶衬底上制备了Pb(Zr0.52Ti0.48)O3/NiFe2O4/La0.7Sr0.3MnO3(PZT/NFO/LSMO)磁电复合外延薄膜,并用X射线衍射和透射电镜技术研究了外延薄膜的物相和显微结构。原子力显微镜结果表明PZT、NFO和LSMO薄膜表面均平整,晶粒尺寸分布均匀,表面粗糙度分别为1.8,1.7和0.2 nm。X射线衍射、选区电子衍射和高分辨透射电子显微镜(HRTEM)测试结果均证明各层薄膜沿(110)STO衬底外延生长,其外延关系为(110)PZT//(110)NFO//(110)LSMO//(110)STO和[001]PZT//[001]NFO//[001]LSMO//[001]STO。HRTEM结果显示,NFO/LSMO界面和LSMO/STO界面平整外延性好,无缺陷,而PZT/NFO界面较粗糙;NFO薄膜表面呈锯齿状,锯齿状面为立方NFO的能量最低{111}面,而PZT薄膜表面呈岛状,进一步的显微结构分析认为PZT薄膜为层状-岛状生长模式。  相似文献   

15.
采用金属有机化学液相沉积法在Si衬底上制备了La0.Sr0.5CoO3(LSCO)导电金属氧化物薄膜,采用溶胶-凝胶法在LSCO导电金属氧化物薄膜上沉积了PbZr0.5Ti0.5O3(PZT)铁电薄膜,X-射线测量结果表明在700℃的退火温度下制备的PZT/LSCO铁电多层薄膜呈(110)取向的钙钛矿结构,谢乐公式估算铁电薄膜的晶粒尺寸为50-80nm,原子力显微镜观察结果显示:薄膜表面平整,均方根粗糙度(RMS)小于5nm,用拉曼光谱测量表明PZT薄膜呈拉曼活性,椭圆偏振光谱仪用来表征薄膜在400-1700nm波长范围的光学性质,用洛仑兹模型来描述PZT和LSCO薄膜的光学性质,获得PZT和LSCO薄膜的折射率,消光系数等光学常数谱。  相似文献   

16.
Epitaxial PZT (001) thin films with a LaNiO3 bottom electrode were deposited by radio-frequency (RF) sputtering onto Si(001) single-crystal substrates with SrTiO3/TiN buffer layers. Pb(Zr0.2Ti0.8)O3 (PZT) samples were shown to consist of a single perovskite phase and to have an (001) orientation. The orientation relationship was determined to be PZT(001)[110]∥LaNiO3(001)[110]∥SrTiO3 (001)[110]∥TiN(001)[110]∥Si(001)[110]. Atomic force microscope (AFM) measurements showed the PZT films to have smooth surfaces with a roughness of 1.15 nm. The microstructure of the multilayer was studied using transmission electron microscopy (TEM). Electrical measurements were conducted using both Pt and LaNiO3 as top electrodes. The measured remanent polarization P r and coercive field E c of the PZT thin film with Pt top electrodes were 23 μC/cm2 and 75 kV/cm, and were 25 μC/cm2 and 60 kV/cm for the PZT film with LaNiO3 top electrodes. No obvious fatigue after 1010 switching cycles indicated good electrical endurance of the PZT films using LaNiO3 electrodes, compared with the PZT film with Pt top electrodes showing a significant polarization loss after 108 cycles. These PZT films with LaNiO3 electrodes could be potential recording media for probe-based high-density data storage.  相似文献   

17.
Chemically derived epitaxial thin films of YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) are fabricated on [001]LaAlO/sub 3/ substrates by the metalorganic-deposition (MOD) process, which has advantages of high quality, nonvacuum, low-cost, and large-scale production of high-T/sub c/ superconducting films. The MOD-derived YBCO films have a sharp transition at the critical temperature (90.4 K) and a high-quality film with a surface resistance of 0.13 m/spl Omega/ (30 K, 9.98 GHz) is obtained. As a microwave application, simple and compact bandpass filters (BPFs) using /spl lambda//4 coplanar-waveguide. stepped-impedance resonators are demonstrated on the YBCO films. A two-stage Chebyshev BPF of center frequency of 5.731 GHz, bandwidth of 135 MHz, and insertion loss of 0.29 dB with little input power dependency in a power range less than 10 dBm is realized on the film.  相似文献   

18.
采用水热—溶胶凝肢法制备了锆钛酸铅( PZT)压电陶瓷薄膜.首先利用水热法处理Si基板,使之生成SiO2/Si层,然后采用旋涂法在处理好的Si基板上涂覆摩尔比r(Zr:Ti)为52:48的PZT前驱体溶胶.研究了基板处理方式、退火温度以及涂胶层数对PZT薄膜结晶性能、表面形貌及厚度的影响.结果表明:水热处理Si基板对P...  相似文献   

19.
采用溶胶-凝胶法(Sol-Gel)在Pt/Si衬底上制备了PbTiO3 (PT)薄膜和Pb (Zrx,Ti1-x)O3(PZT)薄膜,研究了退火温度以及PT种子层对PZT薄膜结晶及压电性能的影响。X射线衍射(XRD)结果表明,制备的PZT薄膜为纯钙钛矿结构的多晶薄膜,有PT种子层的PZT薄膜晶粒尺寸更大,(110)面取向度更高,结晶性能更好;原子力显微镜(AFM)结果表明,制备的薄膜表面形貌比较平整、均匀、无裂纹;压电力显微镜(PFM)结果表明,压电力显微镜(PFM)结果表明,有PT种子层时,PZT薄膜的平均压电系数d33为128~237 pm/V,无PT种子层时平均压电系数d33为21~29 pm/V。在升温速率为10 ℃/s的退火条件下保温10 min时,随着退火温度的升高,PZT薄膜晶粒尺寸增大,粗糙度增大,(110)面取向度升高,平均压电系数d33增大。PT种子层能够有效的改善PZT薄膜的结晶性能和压电性能。  相似文献   

20.
Metallization of high-Tc superconductors using low resistivity metal oxides and Cu-Ge alloys has been investigated on high quality pulsed laser deposited epitaxial YBa2Cu3O7-x (YBCO) films. Epitaxial LaNiO3 (LNO) thin films have been grown on YBCO films at 700°C using pulsed laser deposition. The specific resistivity of LNO was measured to be 50 μΩ-cm at 300K which decreases to 19 μΩ-cm at 100K indicating good metallicity of the LNO films. The contact resistance of LNO-YBCO thin film interface was found to be reasonably low (of the order of 10-4Ω-cm2 at 77K) which suggests that the interface formed between the two films is quite clean and LNO can emerge as a promising metal electrode-material to YBCO films. A preliminary investigation related to the compatibility of Cu3Ge alloy as a contact metallization material to YBCO films is discussed. The usage of other oxide based low resistivity materials such as SrRuO3 (SRO) and SrVO3 (SVO) for metallization of high-Tc YBCO superconductor films is also discussed.  相似文献   

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