低信噪比的接收通道阵列幅相误差校正方法

针对低信噪比情况,建立了新的接收阵列误差模型,提出了一种改进单辅助源通道阵列幅相误差校正算法.该算法利用自相关矩阵对角线部分求解通道幅度误差,用最小二乘法对上三角部分求解通道相位误差.仿真结果表明:在低信噪比时,改进校正算法性能明显优于传统校正算法,在高信噪比时,2种算法残差均非常小.实验结果表明:利用改进的校正算法对综合孔径辐射计进行校正后所得的图像边界清晰、干扰较少,与实际亮温对应较好,明显优于采用传统校正算法进行校正后所得的图像.     

基于局部梯度的神经网络非均匀性校正算法

为了解决传统神经网络算法在用于红外焦平面阵列(Infrared Focal Plane Array,IRFPA)非均匀性校正(Non-Uniformity Correction,NUC)时所面临的边缘模糊、收敛速度慢等问题,通过引入图像局部梯度特性对该算法进行了改进。通过用局部梯度相似度信息构造权值函数来对区域进行加权滤波,可以保留图像边缘信息。在迭代运算中,将梯度幅值加权的自适应参数规整因子加入了误差损失函数,并引入梯度幅值相关的自适应步长用以代替传统的固定步长,从而进一步提升了算法的校正效果和收敛速度。然后对算法的性能曲线和校正结果进行了分析。结果表明,与传统算法相比,改进的神经网络校正算法取得了更好的校正效果,其校正误差稳定低于前者,实现了有效抑制边缘模糊和提升收敛速度的目标。     

红外双边滤波时域高通非均匀性校正

红外焦平面阵列的非均匀性噪声是制约红外成像质量的主要因素。本文在研究了传统的时域高通滤波法及其两种改进算法的基础上,提出了一种改进的基于双边滤波的非均匀性自适应校正算法,在这种方法中引入了一个由双边滤波系数矩阵推得的二次校正矩阵,该矩阵能够判别原始图像与双边滤波所得图像的差图像中场景的边缘部分,并进行自适应的抑制,使校正参数的计算更加准确。实验部分通过对加模拟噪声图像序列和实际非均匀性图像的校正证明本文的改进算法比其他两种改进算法有更好的校正效果。     

电阻阵列非均匀性校正算法实时性研究

非均匀性是电阻阵列输出图像固定噪声的主要来源,非均匀性校正是电阻阵列应用于半实物仿真中图像实时生成的一个不可缺少的环节.通过对校正算法的分析,设计算法实时性测试系统,并对校正在线算法进行改进,满足200Hz的帧频要求.在两种硬件平台方案下对算法的实时性进行测试,测试结果说明:非均匀性校正算法是影响动态红外图像生成实时性的一个重要因素,采用专用的硬件计算设备是提高整个系统实时性的必然选择.     

基于Y型阵的互耦矩阵与DOA的同时估计方法

基于均匀间隔的Y型阵列,提出了一种自校正算法用于非相干源的DOA估计和阵元间的互耦校正,且无需任何方位已知的校正源.自校正算法利用均匀线阵互耦矩阵的对称Toeplitz性和带状特性,无需任何互耦信息的条件下可以精确估计信源DOA和阵列的互耦矩阵,从而实现阵列的自校正,并进行了参数的模糊性分析.仿真结果验证了提出的自校正算法具有分辨力高、计算量小以及校正精度高的特点.     

一种矢量传感器阵列误差的自校正算法及DOA估计

突破大多数阵列误差校正技术针对标量传感器阵列误差模型的限制,提出一种对电磁场矢量传感器阵列误差进行自校正的方法。该方法针对存在方位依赖阵元幅相误差的矢量传感器阵列模型;所提算法基于子空间的思想可对任意极化状态多源信号的信源方位、极化参数和对应的阵元幅相误差进行无模糊联合估计;该方法适用于具有任意几何结构的矢量传感器阵列,仿真试验表明了该算法的有效性。     

基于先验信息的综合孔径辐射计误差校正方法

误差会严重影响综合孔径微波辐射计的成像性能,需要进行校正.但是,随着系统工作频率的提高和阵列尺寸的扩大,校正难度越来越大.文中提出一种基于先验信息的综合孔径微波辐射计误差校正方法.该校正方法包括一个基于先验信息的校正矩阵以及一种基于先验信息的CLEAN算法.首先,该校正方法将含有误差的系统响应作为先验信息构造校正矩阵,并校正得到初步的反演图像;然后,利用上述先验信息估计系统的阵列因子并代入基于先验信息的CLEAN算法,校正图像中剩余的误差.仿真和实验结果表明该校正方法能有效提高综合孔径微波辐射计的成像质量.该校正方法可以在图像反演过程中全面校正综合孔径微波辐射计的误差,降低对校正系统的硬件性能要求,适用于大阵列毫米波综合孔径微波辐射计的校正误差.     

基于剪切波域改进Gamma校正的医学图像增强算法

为了解决医学图像在采集和传输过程中引入噪 声和干扰导致图像质量恶化从而严重影响医学诊断的问题,提出 一种基于剪切波(shearlet)域改进Gamma校正的图像增强方法。首先,通过剪切波变换,把 图像分解成高频 部分和低频部分;其次,用改进的Gamma校正处理剪切波分解后的低频部分以调整图像的整 体对比 度,采用改进的自适应阈值函数对高频部分进行去噪;最后,把剪切波反变换的重构图 像进行模糊对比 增强,以突出图像的细节信息。实验结果表明,本文算法的峰值信噪比(PSNR )、结构相似度(SSIM)和 绝对均值差(MAE)优于其他对比算法,尤其是PSNR的提升更加明显。这些 客观指标说明,本 文算法不仅能有效地抑制噪声,而且能明显改善增强对比度。从主观方面观察,本文算法与 其他算法相比,能获得更好的视觉效果。     

改进的红外图像神经网络非均匀性校正算法

红外焦平面阵列（IRFPA）像元响应存在不一致性,会严重影响红外成像系统成像的质量,实际应用中需要采用响应的非均匀性校正（NUC）技术。传统的神经网络校正算法在校正结果中存在图像模糊和伪像的问题,影响人们对于目标的观察。在分析了传统的神经网络性校正算法所出现问题原因的基础上,提出了有效的改进算法:用非线性滤波器代替传统算法中使用的均值滤波器。算法改进之后所得到的校正图像,不仅在清晰度方面有明显的改善,而且有效的消除了传统算法中存在伪像的问题。     

基于虚拟边框视场光阑的IRFPA自适应非均匀性校正算法

 非均匀性校正是提高红外焦平面阵列成像质量的关键环节.本文提出了一种基于虚拟边框视场光阑的红外非均匀性校正算法.该算法用人工神经网络对边框像元进行初始校正,形成校正虚拟边框,再根据场景信息和帧间位移,将偏置校正参数逐行逐列传递,可消除焦平面阵列全视场响应的偏置非均匀性.由于算法主要基于代数运算,运算量较低,故能根据场景信息自适应地实现快速、高效的一点校正;且不需要对成像系统进行机械结构改造,与传统代数算法相比,适应性更强.真实红外图像与仿真图像对算法的检验结果,证明了方法的有效性.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.